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GB1340464A - Production of tubes of semiconductor material closed at one end - Google Patents

Production of tubes of semiconductor material closed at one end

Info

Publication number
GB1340464A
GB1340464A GB1612072A GB1612072A GB1340464A GB 1340464 A GB1340464 A GB 1340464A GB 1612072 A GB1612072 A GB 1612072A GB 1612072 A GB1612072 A GB 1612072A GB 1340464 A GB1340464 A GB 1340464A
Authority
GB
United Kingdom
Prior art keywords
carrier
carrier body
screwed
pressed
rod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1612072A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1340464A publication Critical patent/GB1340464A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

1340464 Semi-conductor tubes SIEMENS AG 7 April 1972 [19 May 1971] 16120/72 Heading C1A A layer of semi-conductor material is deposited from a gaseous compound thereof on to the heated outer surface of a hollow tubular body closed at one end and heated by direct flow of current therethrough, one of the electrodes used to supply current being in the form of a rod of graphite, glass carbon, spectral carbon or pyrographite arranged with the said carrier body and connected electrically thereto at the closed end, and subsequently removing said carrier body without damaging the deposited layer. The rod may be screwed or pressed into a recess provided in the inner face of the closed end of the carrier, which closed end may itself be screwed or pressed into the open end of the carrier body. Alternatively the cap closing the end of the carrier may be of mushroom shape, the rod being screwed or pressed into the stem, the cap being substantially of the same diameter as the carrier body if desired. Other features of the apparatus and the manner of its use are of the usual Siemens type. Silicon may be deposited from the vapour phase reaction of silicochloroform and hydrogen.
GB1612072A 1971-05-19 1972-04-07 Production of tubes of semiconductor material closed at one end Expired GB1340464A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2125085A DE2125085C3 (en) 1971-05-19 1971-05-19 Device for manufacturing tubes closed on one side from semiconductor material

Publications (1)

Publication Number Publication Date
GB1340464A true GB1340464A (en) 1973-12-12

Family

ID=5808445

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1612072A Expired GB1340464A (en) 1971-05-19 1972-04-07 Production of tubes of semiconductor material closed at one end

Country Status (16)

Country Link
US (1) US3747559A (en)
JP (1) JPS5540528B1 (en)
AT (1) AT336682B (en)
BE (1) BE778749A (en)
CA (1) CA968673A (en)
CH (1) CH537214A (en)
CS (1) CS167349B2 (en)
DD (1) DD96853A5 (en)
DE (1) DE2125085C3 (en)
DK (1) DK137550C (en)
FR (1) FR2138099B1 (en)
GB (1) GB1340464A (en)
IT (1) IT955601B (en)
NL (1) NL7202997A (en)
PL (1) PL82569B1 (en)
SE (1) SE367216B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4015922A (en) * 1970-12-09 1977-04-05 Siemens Aktiengesellschaft Apparatus for the manufacture of tubular bodies of semiconductor material
US3979490A (en) * 1970-12-09 1976-09-07 Siemens Aktiengesellschaft Method for the manufacture of tubular bodies of semiconductor material
US4034705A (en) * 1972-05-16 1977-07-12 Siemens Aktiengesellschaft Shaped bodies and production of semiconductor material
US4035460A (en) * 1972-05-16 1977-07-12 Siemens Aktiengesellschaft Shaped bodies and production of semiconductor material
DE2322952C3 (en) * 1973-05-07 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of trays for holding crystal disks in diffusion and tempering processes
JP2888253B2 (en) * 1989-07-20 1999-05-10 富士通株式会社 Chemical vapor deposition and apparatus for its implementation
DE69835216T2 (en) 1997-07-25 2007-05-31 Nichia Corp., Anan SEMICONDUCTOR DEVICE OF A NITRIDE CONNECTION
DE19738234C1 (en) * 1997-09-02 1998-10-22 Fraunhofer Ges Forschung Apparatus for producing sputtered coatings consisting of hard substances
JP3770014B2 (en) 1999-02-09 2006-04-26 日亜化学工業株式会社 Nitride semiconductor device
WO2000052796A1 (en) 1999-03-04 2000-09-08 Nichia Corporation Nitride semiconductor laser element
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
CN111734950A (en) * 2020-07-01 2020-10-02 西安维国电子科技有限公司 Method and device for filling and recovering electric insulating gas in closed space

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2955566A (en) * 1957-04-16 1960-10-11 Chilean Nitrate Sales Corp Dissociation-deposition unit for the production of chromium
GB944009A (en) * 1960-01-04 1963-12-11 Texas Instruments Ltd Improvements in or relating to the deposition of silicon on a tantalum article
US3451772A (en) * 1967-06-14 1969-06-24 Air Reduction Production of ultrapure titanium nitride refractory articles
US3547530A (en) * 1968-11-12 1970-12-15 Bell Telephone Labor Inc Overhead projector

Also Published As

Publication number Publication date
DE2125085B2 (en) 1978-06-29
US3747559A (en) 1973-07-24
IT955601B (en) 1973-09-29
DE2125085C3 (en) 1979-02-22
AT336682B (en) 1977-05-25
DK137550C (en) 1978-09-04
FR2138099B1 (en) 1974-07-26
NL7202997A (en) 1972-11-21
ATA241272A (en) 1976-09-15
PL82569B1 (en) 1975-10-31
DE2125085A1 (en) 1972-12-07
BE778749A (en) 1972-05-16
SE367216B (en) 1974-05-20
CS167349B2 (en) 1976-04-29
DD96853A5 (en) 1973-04-12
FR2138099A1 (en) 1972-12-29
JPS5540528B1 (en) 1980-10-18
CA968673A (en) 1975-06-03
CH537214A (en) 1973-05-31
DK137550B (en) 1978-03-20

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee