GB1297899A - - Google Patents
Info
- Publication number
- GB1297899A GB1297899A GB1297899DA GB1297899A GB 1297899 A GB1297899 A GB 1297899A GB 1297899D A GB1297899D A GB 1297899DA GB 1297899 A GB1297899 A GB 1297899A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- particles
- insulating layer
- trapping
- conductors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 abstract 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 239000002245 particle Substances 0.000 abstract 3
- 238000009413 insulation Methods 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 150000001805 chlorine compounds Chemical class 0.000 abstract 1
- 150000002222 fluorine compounds Chemical class 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract 1
- 239000000395 magnesium oxide Substances 0.000 abstract 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 239000011368 organic material Substances 0.000 abstract 1
- 239000005360 phosphosilicate glass Substances 0.000 abstract 1
- 150000004771 selenides Chemical class 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 150000004772 tellurides Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
1297899 Semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 28 May 1971 [2 Oct 1970] 17806/71 Heading H1K The device shown is a variable-threshold IGFET making use of trapping of non-interacting particles 3 in the gate insulation; charge reaches these traps by tunnelling from the semiconductor body 1 through the inner insulating layer 2. In a variant the diffused source and drain regions 8 and their associated ohmic contacts 9 are replaced by Schottky barrier contacts. In other variants the source and drain are not provided and the devices function as voltage-variable capacitors with high hysteresis. Suitable semi-conductors include silicon, germanium, and gallium arsenide. The insulators include aluminium oxide, magnesium oxide, oxides, nitrides, tellurides, chlorides, selenides and fluorides of semi-conductor elements, and phosphosilicate glass; and ceramic or organic materials may be used for the outer insulating layer 5. The trapping particles may be particles of metals or semi-conductors or may be, particularly if a homogeneous insulation 2, 9 is employed, non-interacting groups of implanted ions.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7746470A | 1970-10-02 | 1970-10-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1297899A true GB1297899A (en) | 1972-11-29 |
Family
ID=22138205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1297899D Expired GB1297899A (en) | 1970-10-02 | 1971-05-28 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS521839B1 (en) |
| DE (1) | DE2149303A1 (en) |
| FR (1) | FR2112241B1 (en) |
| GB (1) | GB1297899A (en) |
Cited By (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5508543A (en) * | 1994-04-29 | 1996-04-16 | International Business Machines Corporation | Low voltage memory |
| EP0914658A1 (en) * | 1996-07-23 | 1999-05-12 | Saifun Semiconductors Ltd | Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
| EP0971416A1 (en) * | 1998-01-26 | 2000-01-12 | Sony Corporation | Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device |
| US6040605A (en) * | 1998-01-28 | 2000-03-21 | Hitachi, Ltd. | Semiconductor memory device |
| US6104056A (en) * | 1993-08-19 | 2000-08-15 | Hitachi, Ltd. | Semiconductor element and semiconductor memory device using the same |
| US6429063B1 (en) | 1999-10-26 | 2002-08-06 | Saifun Semiconductors Ltd. | NROM cell with generally decoupled primary and secondary injection |
| US6477084B2 (en) | 1998-05-20 | 2002-11-05 | Saifun Semiconductors Ltd. | NROM cell with improved programming, erasing and cycling |
| US6490204B2 (en) | 2000-05-04 | 2002-12-03 | Saifun Semiconductors Ltd. | Programming and erasing methods for a reference cell of an NROM array |
| US6552387B1 (en) | 1997-07-30 | 2003-04-22 | Saifun Semiconductors Ltd. | Non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
| US6584017B2 (en) | 2001-04-05 | 2003-06-24 | Saifun Semiconductors Ltd. | Method for programming a reference cell |
| US6583007B1 (en) | 2001-12-20 | 2003-06-24 | Saifun Semiconductors Ltd. | Reducing secondary injection effects |
| US6649972B2 (en) | 1997-08-01 | 2003-11-18 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
| US6664588B2 (en) | 1998-05-20 | 2003-12-16 | Saifun Semiconductors Ltd. | NROM cell with self-aligned programming and erasure areas |
| US6826107B2 (en) | 2002-08-01 | 2004-11-30 | Saifun Semiconductors Ltd. | High voltage insertion in flash memory cards |
| US6829172B2 (en) | 2000-05-04 | 2004-12-07 | Saifun Semiconductors Ltd. | Programming of nonvolatile memory cells |
| US6828625B2 (en) | 2001-11-19 | 2004-12-07 | Saifun Semiconductors Ltd. | Protective layer in memory device and method therefor |
| US7668017B2 (en) | 2005-08-17 | 2010-02-23 | Saifun Semiconductors Ltd. | Method of erasing non-volatile memory cells |
| US7675782B2 (en) | 2002-10-29 | 2010-03-09 | Saifun Semiconductors Ltd. | Method, system and circuit for programming a non-volatile memory array |
| US7692961B2 (en) | 2006-02-21 | 2010-04-06 | Saifun Semiconductors Ltd. | Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection |
| US7701779B2 (en) | 2006-04-27 | 2010-04-20 | Sajfun Semiconductors Ltd. | Method for programming a reference cell |
| US7738304B2 (en) | 2002-07-10 | 2010-06-15 | Saifun Semiconductors Ltd. | Multiple use memory chip |
| US7743230B2 (en) | 2003-01-31 | 2010-06-22 | Saifun Semiconductors Ltd. | Memory array programming circuit and a method for using the circuit |
| US7760554B2 (en) | 2006-02-21 | 2010-07-20 | Saifun Semiconductors Ltd. | NROM non-volatile memory and mode of operation |
| US7786512B2 (en) | 2005-07-18 | 2010-08-31 | Saifun Semiconductors Ltd. | Dense non-volatile memory array and method of fabrication |
| US7808818B2 (en) | 2006-01-12 | 2010-10-05 | Saifun Semiconductors Ltd. | Secondary injection for NROM |
| USRE41868E1 (en) | 1998-01-28 | 2010-10-26 | Hitachi, Ltd. | Semiconductor memory device |
| US7964459B2 (en) | 2004-10-14 | 2011-06-21 | Spansion Israel Ltd. | Non-volatile memory structure and method of fabrication |
| US8053812B2 (en) | 2005-03-17 | 2011-11-08 | Spansion Israel Ltd | Contact in planar NROM technology |
| US8253452B2 (en) | 2006-02-21 | 2012-08-28 | Spansion Israel Ltd | Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2772989B1 (en) * | 1997-12-19 | 2003-06-06 | Commissariat Energie Atomique | MULTINIVE MEMORY DEVICE WITH COULOMB BLOCKING, MANUFACTURING METHOD AND METHOD OF READING / WRITING / ERASING SUCH A DEVICE |
| FR3129342B1 (en) | 2021-11-19 | 2023-10-06 | Psa Automobiles Sa | Method for securing the immobilization of a motor vehicle following a vehicle braking command. |
-
1971
- 1971-05-28 GB GB1297899D patent/GB1297899A/en not_active Expired
- 1971-09-02 FR FR7132348A patent/FR2112241B1/fr not_active Expired
- 1971-09-03 JP JP6758371A patent/JPS521839B1/ja active Pending
- 1971-10-02 DE DE19712149303 patent/DE2149303A1/en active Pending
Cited By (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6291852B1 (en) | 1993-08-19 | 2001-09-18 | Hitachi, Ltd. | Semiconductor element and semiconductor memory device using the same |
| US6674117B2 (en) | 1993-08-19 | 2004-01-06 | Hitachi, Ltd. | Semiconductor element and semiconductor memory device using the same |
| US6787841B2 (en) | 1993-08-19 | 2004-09-07 | Hitachi, Ltd. | Semiconductor element and semiconductor memory device using the same |
| US7061053B2 (en) | 1993-08-19 | 2006-06-13 | Hitachi, Ltd. | Semiconductor element and semiconductor memory device using the same |
| US6555882B2 (en) | 1993-08-19 | 2003-04-29 | Hitachi, Ltd. | Semiconductor element and semiconductor memory device using the same |
| US7309892B2 (en) | 1993-08-19 | 2007-12-18 | Hitachi, Ltd. | Semiconductor element and semiconductor memory device using the same |
| US6104056A (en) * | 1993-08-19 | 2000-08-15 | Hitachi, Ltd. | Semiconductor element and semiconductor memory device using the same |
| US5508543A (en) * | 1994-04-29 | 1996-04-16 | International Business Machines Corporation | Low voltage memory |
| EP0914658A4 (en) * | 1996-07-23 | 2000-03-22 | Saifun Semiconductors Ltd | Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
| EP0914658A1 (en) * | 1996-07-23 | 1999-05-12 | Saifun Semiconductors Ltd | Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
| US6552387B1 (en) | 1997-07-30 | 2003-04-22 | Saifun Semiconductors Ltd. | Non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
| US6566699B2 (en) | 1997-07-30 | 2003-05-20 | Saifun Semiconductors Ltd. | Non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
| US6803299B2 (en) | 1997-07-30 | 2004-10-12 | Saifun Semiconductors Ltd. | Non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
| US6768165B1 (en) | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
| US6649972B2 (en) | 1997-08-01 | 2003-11-18 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
| EP0971416A4 (en) * | 1998-01-26 | 2000-08-09 | Sony Corp | Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device |
| EP0971416A1 (en) * | 1998-01-26 | 2000-01-12 | Sony Corporation | Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device |
| US6194759B1 (en) | 1998-01-28 | 2001-02-27 | Hitachi, Ltd. | Semiconductor memory device |
| USRE41868E1 (en) | 1998-01-28 | 2010-10-26 | Hitachi, Ltd. | Semiconductor memory device |
| US6040605A (en) * | 1998-01-28 | 2000-03-21 | Hitachi, Ltd. | Semiconductor memory device |
| US6477084B2 (en) | 1998-05-20 | 2002-11-05 | Saifun Semiconductors Ltd. | NROM cell with improved programming, erasing and cycling |
| US6664588B2 (en) | 1998-05-20 | 2003-12-16 | Saifun Semiconductors Ltd. | NROM cell with self-aligned programming and erasure areas |
| US6429063B1 (en) | 1999-10-26 | 2002-08-06 | Saifun Semiconductors Ltd. | NROM cell with generally decoupled primary and secondary injection |
| US6490204B2 (en) | 2000-05-04 | 2002-12-03 | Saifun Semiconductors Ltd. | Programming and erasing methods for a reference cell of an NROM array |
| US6829172B2 (en) | 2000-05-04 | 2004-12-07 | Saifun Semiconductors Ltd. | Programming of nonvolatile memory cells |
| US6584017B2 (en) | 2001-04-05 | 2003-06-24 | Saifun Semiconductors Ltd. | Method for programming a reference cell |
| US7098107B2 (en) | 2001-11-19 | 2006-08-29 | Saifun Semiconductor Ltd. | Protective layer in memory device and method therefor |
| US6828625B2 (en) | 2001-11-19 | 2004-12-07 | Saifun Semiconductors Ltd. | Protective layer in memory device and method therefor |
| US6583007B1 (en) | 2001-12-20 | 2003-06-24 | Saifun Semiconductors Ltd. | Reducing secondary injection effects |
| US7738304B2 (en) | 2002-07-10 | 2010-06-15 | Saifun Semiconductors Ltd. | Multiple use memory chip |
| US6826107B2 (en) | 2002-08-01 | 2004-11-30 | Saifun Semiconductors Ltd. | High voltage insertion in flash memory cards |
| US7675782B2 (en) | 2002-10-29 | 2010-03-09 | Saifun Semiconductors Ltd. | Method, system and circuit for programming a non-volatile memory array |
| US7743230B2 (en) | 2003-01-31 | 2010-06-22 | Saifun Semiconductors Ltd. | Memory array programming circuit and a method for using the circuit |
| US7964459B2 (en) | 2004-10-14 | 2011-06-21 | Spansion Israel Ltd. | Non-volatile memory structure and method of fabrication |
| US8053812B2 (en) | 2005-03-17 | 2011-11-08 | Spansion Israel Ltd | Contact in planar NROM technology |
| US7786512B2 (en) | 2005-07-18 | 2010-08-31 | Saifun Semiconductors Ltd. | Dense non-volatile memory array and method of fabrication |
| US7668017B2 (en) | 2005-08-17 | 2010-02-23 | Saifun Semiconductors Ltd. | Method of erasing non-volatile memory cells |
| US7808818B2 (en) | 2006-01-12 | 2010-10-05 | Saifun Semiconductors Ltd. | Secondary injection for NROM |
| US7760554B2 (en) | 2006-02-21 | 2010-07-20 | Saifun Semiconductors Ltd. | NROM non-volatile memory and mode of operation |
| US7692961B2 (en) | 2006-02-21 | 2010-04-06 | Saifun Semiconductors Ltd. | Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection |
| US8253452B2 (en) | 2006-02-21 | 2012-08-28 | Spansion Israel Ltd | Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same |
| US7701779B2 (en) | 2006-04-27 | 2010-04-20 | Sajfun Semiconductors Ltd. | Method for programming a reference cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS521839B1 (en) | 1977-01-18 |
| DE2149303A1 (en) | 1972-04-06 |
| FR2112241A1 (en) | 1972-06-16 |
| FR2112241B1 (en) | 1974-03-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |