GB1258259A - - Google Patents
Info
- Publication number
- GB1258259A GB1258259A GB1258259DA GB1258259A GB 1258259 A GB1258259 A GB 1258259A GB 1258259D A GB1258259D A GB 1258259DA GB 1258259 A GB1258259 A GB 1258259A
- Authority
- GB
- United Kingdom
- Prior art keywords
- film
- ions
- produce
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000002500 ions Chemical class 0.000 abstract 5
- 239000010410 layer Substances 0.000 abstract 4
- 150000001875 compounds Chemical class 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000003990 capacitor Substances 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000000712 assembly Effects 0.000 abstract 1
- 238000000429 assembly Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 230000003993 interaction Effects 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 238000009738 saturating Methods 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
1,258,259. Resistors; capacitors; circuit assemblies. UNITED KINGDOM ATOMIC ENERGY AUTHORITY. 27 March, 1969 [5 April, 1968], No. 16638/68. Headings H1M, H1R and H1S. [Also in Divisions Cl and C7] A thin metal or silicon film is bombarded with ions to increase its resistivity. The ions produce a compound with the metal either directly or by sputtering back atoms from the substrate. In the former case the ions may be O<SP>+</SP>, N<SP>+</SP>, P<SP>+</SP> (forming oxides, nitrides or phosphides with the film); in the latter case ions of an inert element (e.g. Ar<SP>+</SP>) may be used. The film may be of Al, Ta, Sn, Cu, Ti or Si on an insulating (e.g. glass) substrate or may be the surface layer of a metallic body. To produce a film of a required resistivity, it is necessary (in order to avoid saturating the film) either to measure its resistance during bombardment or to use doses calibrated for particular films of particular thicknesses. If the range of the ion beam is of the order of the thickness of the film, the resistive compound is formed throughout the film. If the range is considerably less than the film thickness, only the upper layer of the film is affected. This may be dosed to a high resistance and a further layer of film then applied over it to produce a capacitor or (by making a connection to the resistive layer) a RC network. If the range is greater than the film thickness, there is no substantial interaction with the film, but the ions enter the substrate and sputter atoms out of it into the film to form a compound with the film. This method may be used to produce a transparent, conductive Al layer on glass.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1663868 | 1968-04-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1258259A true GB1258259A (en) | 1971-12-30 |
Family
ID=10080923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1258259D Expired GB1258259A (en) | 1968-04-05 | 1968-04-05 |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1258259A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4333808A (en) * | 1979-10-30 | 1982-06-08 | International Business Machines Corporation | Method for manufacture of ultra-thin film capacitor |
| US4351695A (en) * | 1980-01-30 | 1982-09-28 | Siemens Aktiengesellschaft | Method of producing low-resistant, monocrystalline metallic layers by implanting ions into a polycrystalline metal layer and heating to produce a monocrystalline layer |
| US4364969A (en) * | 1979-12-13 | 1982-12-21 | United Kingdom Atomic Energy Authority | Method of coating titanium and its alloys |
| GB2175316A (en) * | 1985-05-17 | 1986-11-26 | Atomic Energy Authority Uk | Improved cutting edges |
| GB2244284A (en) * | 1990-05-02 | 1991-11-27 | Nippon Sheet Glass Co Ltd | A method of manufacturing a polycrystalline semiconductor film by ion implantation |
-
1968
- 1968-04-05 GB GB1258259D patent/GB1258259A/en not_active Expired
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4333808A (en) * | 1979-10-30 | 1982-06-08 | International Business Machines Corporation | Method for manufacture of ultra-thin film capacitor |
| US4364969A (en) * | 1979-12-13 | 1982-12-21 | United Kingdom Atomic Energy Authority | Method of coating titanium and its alloys |
| US4351695A (en) * | 1980-01-30 | 1982-09-28 | Siemens Aktiengesellschaft | Method of producing low-resistant, monocrystalline metallic layers by implanting ions into a polycrystalline metal layer and heating to produce a monocrystalline layer |
| GB2175316A (en) * | 1985-05-17 | 1986-11-26 | Atomic Energy Authority Uk | Improved cutting edges |
| GB2175316B (en) * | 1985-05-17 | 1989-04-26 | Atomic Energy Authority Uk | Improved cutting edges |
| GB2244284A (en) * | 1990-05-02 | 1991-11-27 | Nippon Sheet Glass Co Ltd | A method of manufacturing a polycrystalline semiconductor film by ion implantation |
| GB2244284B (en) * | 1990-05-02 | 1993-11-03 | Nippon Sheet Glass Co Ltd | A method of manufacturing a polycrystalline semiconductor film |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |