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GB1082358A - Double injecting semiconductor - Google Patents

Double injecting semiconductor

Info

Publication number
GB1082358A
GB1082358A GB2134565A GB2134565A GB1082358A GB 1082358 A GB1082358 A GB 1082358A GB 2134565 A GB2134565 A GB 2134565A GB 2134565 A GB2134565 A GB 2134565A GB 1082358 A GB1082358 A GB 1082358A
Authority
GB
United Kingdom
Prior art keywords
metal contacts
diodes
gaas
semi
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2134565A
Inventor
Stanley Carden Shepard
Geoffery Hartington Walker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB2134565A priority Critical patent/GB1082358A/en
Priority to GB1484667A priority patent/GB1119745A/en
Publication of GB1082358A publication Critical patent/GB1082358A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

1,082,358. Semi-conductor device. STANDARD TELEPHONES & CABLES Ltd. May 20, 1965, No. 21345/65. Heading H1K. A double injection semi-conductor device includes a body of GaAs of resistivity 10<SP>8</SP> ohm/cm. and first and second metal contacts having respectively different work functions both metal contacts being on the same face of the semi-conductor body. Single diodes or a plurality of diodes may be formed on the body, the metal contacts and electrodes therefor being formed by masking techniques. The body may be a film supported on an insulating substrate with a heat sink bonded to the substrate. In an insulated gate field effect transistor Au electrodes 21 and 22 are applied to a GaAs substrate 20 using evaporating and masking techniques. Metal contacts 24 and 25 of Au and Al respectively are formed by evaporation and masking and then a layer 26 of SiO 2 and finally a grid electrode 27 of Au, the grid electrode being connected to a gold terminal. A switching diode sensitive to light in the range 5000-8500 Š is disclosed (Figs. 1 and 2, not shown). Current-voltage characteristics of the diode device are given (Figs. 3 and 4, not shown) which indicate regions of negative resistance. Indium wires may be attached to the gold electrodes by thermo-compression bonding or micro-welding. A plurality of diodes may be made in a single block of GaAs (Fig. 6, not shown).
GB2134565A 1965-05-20 1965-05-20 Double injecting semiconductor Expired GB1082358A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB2134565A GB1082358A (en) 1965-05-20 1965-05-20 Double injecting semiconductor
GB1484667A GB1119745A (en) 1965-05-20 1967-03-31 Double injecting semiconductor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB2134565A GB1082358A (en) 1965-05-20 1965-05-20 Double injecting semiconductor
GB1484667A GB1119745A (en) 1965-05-20 1967-03-31 Double injecting semiconductor

Publications (1)

Publication Number Publication Date
GB1082358A true GB1082358A (en) 1967-09-06

Family

ID=26250833

Family Applications (2)

Application Number Title Priority Date Filing Date
GB2134565A Expired GB1082358A (en) 1965-05-20 1965-05-20 Double injecting semiconductor
GB1484667A Expired GB1119745A (en) 1965-05-20 1967-03-31 Double injecting semiconductor

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB1484667A Expired GB1119745A (en) 1965-05-20 1967-03-31 Double injecting semiconductor

Country Status (1)

Country Link
GB (2) GB1082358A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4763176A (en) * 1986-01-08 1988-08-09 Fujitsu Limited Metal-semiconductor-metal schottky photodiode
US5461246A (en) * 1994-05-12 1995-10-24 Regents Of The University Of Minnesota Photodetector with first and second contacts

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2149293B1 (en) * 1971-08-18 1974-09-27 Radiotechnique Compelec

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4763176A (en) * 1986-01-08 1988-08-09 Fujitsu Limited Metal-semiconductor-metal schottky photodiode
US5461246A (en) * 1994-05-12 1995-10-24 Regents Of The University Of Minnesota Photodetector with first and second contacts

Also Published As

Publication number Publication date
GB1119745A (en) 1968-07-10

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