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GB1081827A - Improvements in or relating to a floating zone process - Google Patents

Improvements in or relating to a floating zone process

Info

Publication number
GB1081827A
GB1081827A GB4038/66A GB403866A GB1081827A GB 1081827 A GB1081827 A GB 1081827A GB 4038/66 A GB4038/66 A GB 4038/66A GB 403866 A GB403866 A GB 403866A GB 1081827 A GB1081827 A GB 1081827A
Authority
GB
United Kingdom
Prior art keywords
rod
relating
jan
floating zone
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4038/66A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Publication of GB1081827A publication Critical patent/GB1081827A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/912—Replenishing liquid precursor, other than a moving zone

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)

Abstract

1,081,827. Zone-melting. SIEMENS-SCHUCKERTWERKE A.G. Jan. 28, 1966 [Jan. 29, 1965], No. 4038/66. Heading B1S. A molten zone is passed upwards through a vertical rod of silicon from a seed so as to produce a rod of progressively increasing diameter over most of its length. The increase in rod diameter may be 1/200 to 1 unit per unit length. The speed of travel of the molten zone may be 1-5 mm/min. The lower rod holder may be rotated while the upper rod holder is moved towards it.
GB4038/66A 1965-01-29 1966-01-28 Improvements in or relating to a floating zone process Expired GB1081827A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES95239A DE1254590B (en) 1965-01-29 1965-01-29 Method for crucible-free zone melting of semiconductor material, in particular silicon

Publications (1)

Publication Number Publication Date
GB1081827A true GB1081827A (en) 1967-09-06

Family

ID=7519234

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4038/66A Expired GB1081827A (en) 1965-01-29 1966-01-28 Improvements in or relating to a floating zone process

Country Status (5)

Country Link
US (1) US3454367A (en)
BE (1) BE675593A (en)
CH (1) CH430656A (en)
DE (1) DE1254590B (en)
GB (1) GB1081827A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5108720A (en) * 1991-05-20 1992-04-28 Hemlock Semiconductor Corporation Float zone processing of particulate silicon
US5361128A (en) * 1992-09-10 1994-11-01 Hemlock Semiconductor Corporation Method for analyzing irregular shaped chunked silicon for contaminates
US6251182B1 (en) 1993-05-11 2001-06-26 Hemlock Semiconductor Corporation Susceptor for float-zone apparatus

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3876388A (en) * 1968-10-30 1975-04-08 Siemens Ag Method of varying the crystalline structure of or the concentration of impurities contained in a tubular starting crystal or both using diagonal zone melting
DE2658368C2 (en) 1976-12-23 1982-09-23 Degussa Ag, 6000 Frankfurt Organosilicon compounds containing sulfur and phosphorus, process for their preparation and their use
JP2922078B2 (en) * 1993-03-17 1999-07-19 株式会社トクヤマ Silicon rod manufacturing method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2743200A (en) * 1954-05-27 1956-04-24 Bell Telephone Labor Inc Method of forming junctions in silicon
US2985519A (en) * 1958-06-02 1961-05-23 Du Pont Production of silicon
US3206286A (en) * 1959-07-23 1965-09-14 Westinghouse Electric Corp Apparatus for growing crystals
US2992311A (en) * 1960-09-28 1961-07-11 Siemens Ag Method and apparatus for floatingzone melting of semiconductor rods

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5108720A (en) * 1991-05-20 1992-04-28 Hemlock Semiconductor Corporation Float zone processing of particulate silicon
US5361128A (en) * 1992-09-10 1994-11-01 Hemlock Semiconductor Corporation Method for analyzing irregular shaped chunked silicon for contaminates
DE4330598C2 (en) * 1992-09-10 2002-10-24 Hemlock Semiconductor Corp Methods for the analysis of impurities in silicon lumps
US6251182B1 (en) 1993-05-11 2001-06-26 Hemlock Semiconductor Corporation Susceptor for float-zone apparatus

Also Published As

Publication number Publication date
US3454367A (en) 1969-07-08
DE1254590B (en) 1967-11-23
CH430656A (en) 1967-02-28
BE675593A (en) 1966-07-26

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