GB1045526A - A method of zone-by-zone melting a rod of semiconductor material - Google Patents
A method of zone-by-zone melting a rod of semiconductor materialInfo
- Publication number
- GB1045526A GB1045526A GB1589564A GB1589564A GB1045526A GB 1045526 A GB1045526 A GB 1045526A GB 1589564 A GB1589564 A GB 1589564A GB 1589564 A GB1589564 A GB 1589564A GB 1045526 A GB1045526 A GB 1045526A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- heating
- rod
- melting
- heating means
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
Abstract
1,045,526. Zone-melting. SIEMENSSCHUCKERTWERKE A.G. April 16, 1964 [April 27, 1963], No. 15895/64. Heading B1S. In the suspended zone-melting of a silicon rod, a low temperature gradient is maintained in the neighbourhood of the molten zone by means of preheating and after-heating means, the pre-heating means being of greater heating power than the after-heating means. The rod may have a diameter of 25 mm. The molten zone may be moved at 3 mm/min. The three heating means may be fixed relatively to one another. Heating may be by radiation, electron beams or induction. As shown, a rod 2 is passed relatively downwards through three induction coils, pre-heating coil 5a and after-heating coil 5b being electrically connected and having three and two turns respectively. Alternatively (Fig. 2, not shown), both coils may have three turns and the after-heating coil may be of larger diameter.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1963S0084953 DE1243642B (en) | 1963-04-27 | 1963-04-27 | Device for crucible-free zone melting of semiconductor material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1045526A true GB1045526A (en) | 1966-10-12 |
Family
ID=7512062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1589564A Expired GB1045526A (en) | 1963-04-27 | 1964-04-16 | A method of zone-by-zone melting a rod of semiconductor material |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE647136A (en) |
| CH (1) | CH407062A (en) |
| DE (1) | DE1243642B (en) |
| GB (1) | GB1045526A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3945148A1 (en) | 2020-07-27 | 2022-02-02 | ScIDre Scientific Instruments Dresden GmbH | Laser-based afterheating for crystal growth |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5003551A (en) * | 1990-05-22 | 1991-03-26 | Inductotherm Corp. | Induction melting of metals without a crucible |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1270943A (en) * | 1959-10-19 | 1961-09-01 | Philips Nv | Method and device for the production of rod-shaped bodies by zone fusion |
| NL274145A (en) * | 1961-03-17 | |||
| DE1147206B (en) * | 1961-10-02 | 1963-04-18 | Siemens Ag | Process for the production of rod-shaped silicon single crystals with an average dislocation density by crucible-free zone melting |
| FR1315934A (en) * | 1961-12-15 | 1963-01-25 | Radiotechnique | Horizontal apparatus for purification and extraction of semiconductor crystals |
-
1963
- 1963-04-27 DE DE1963S0084953 patent/DE1243642B/en active Pending
-
1964
- 1964-01-17 CH CH50464A patent/CH407062A/en unknown
- 1964-04-16 GB GB1589564A patent/GB1045526A/en not_active Expired
- 1964-04-27 BE BE647136D patent/BE647136A/xx unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3945148A1 (en) | 2020-07-27 | 2022-02-02 | ScIDre Scientific Instruments Dresden GmbH | Laser-based afterheating for crystal growth |
| WO2022023108A1 (en) | 2020-07-27 | 2022-02-03 | Scidre Scientific Instruments Dresden Gmbh | Laser-based afterheating for crystal growth |
Also Published As
| Publication number | Publication date |
|---|---|
| BE647136A (en) | 1964-10-27 |
| CH407062A (en) | 1966-02-15 |
| DE1243642B (en) | 1967-07-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB904100A (en) | A process for zone-by-zone melting of a rod of semi-conductor material using an induction coil as the heating means and an automatic arrangement for controlling the current through the coil | |
| GB916390A (en) | Method of drawing a semi-conductor rod from a melt | |
| GB1034503A (en) | Improvements in or relating to the production of crystalline material | |
| GB986748A (en) | Zone-by-zone melting of a rod of semi-conductor material | |
| GB1029804A (en) | A process for producing a substantially monocrystalline rod of semiconductor material | |
| US3121619A (en) | Zone-melting method and apparatus | |
| GB1045526A (en) | A method of zone-by-zone melting a rod of semiconductor material | |
| GB1179877A (en) | A Process for the Crucible-free Zone-by-Zone Melting of a Crystalline Rod | |
| ES258156A1 (en) | Method and means for growing and treating crystals | |
| GB1043867A (en) | Apparatus and process for controlling dendritic crystal growth | |
| GB1059960A (en) | The production of semi-conductor rods | |
| GB1081600A (en) | A method of melting a rod of crystalline material zone-by-zone | |
| GB1045664A (en) | A process for melting a rod of polycrystalline material zone-by-zone | |
| GB973754A (en) | Improvements in or relating to moving-zone heat treatment of materials | |
| GB1284068A (en) | Improvements in or relating to the drawing of crystalline bodies | |
| GB1065187A (en) | A method of producing a rod of semi-conductor material | |
| GB1031560A (en) | Improvements in or relating to the production of monocrystalline semiconductor material | |
| GB937190A (en) | Process for the zone melting of rods of semi-conducting or conducting material | |
| US3563810A (en) | Method for reducing the cross section of semiconductor rods by molten-zone stretching | |
| GB1148007A (en) | Improvements in or relating to a method of and apparatus for crucible-free zone melting | |
| GB1375132A (en) | ||
| GB876467A (en) | Improvements in or relating to apparatus for use in melting a zone of a rod of semi-conductor material | |
| GB1006034A (en) | A method of producing a rod of semi-conductor material | |
| GB1191166A (en) | Zone Melting | |
| GB931975A (en) | Method of drawing monocrystalline semi-conductor rods |