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GB0318522D0 - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
GB0318522D0
GB0318522D0 GBGB0318522.0A GB0318522A GB0318522D0 GB 0318522 D0 GB0318522 D0 GB 0318522D0 GB 0318522 A GB0318522 A GB 0318522A GB 0318522 D0 GB0318522 D0 GB 0318522D0
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB0318522.0A
Other versions
GB2404785A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Sheffield
Original Assignee
University of Sheffield
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Sheffield filed Critical University of Sheffield
Priority to GB0318522A priority Critical patent/GB2404785A/en
Publication of GB0318522D0 publication Critical patent/GB0318522D0/en
Priority to GB0406334A priority patent/GB2406437A/en
Priority to PCT/GB2004/003428 priority patent/WO2005015653A1/en
Publication of GB2404785A publication Critical patent/GB2404785A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
GB0318522A 2003-08-07 2003-08-07 Field effect transistor with organic ferroelectric gate insulator Withdrawn GB2404785A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB0318522A GB2404785A (en) 2003-08-07 2003-08-07 Field effect transistor with organic ferroelectric gate insulator
GB0406334A GB2406437A (en) 2003-08-07 2004-03-22 Field effect transistor with organic ferroelectric gate insulator
PCT/GB2004/003428 WO2005015653A1 (en) 2003-08-07 2004-08-09 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0318522A GB2404785A (en) 2003-08-07 2003-08-07 Field effect transistor with organic ferroelectric gate insulator

Publications (2)

Publication Number Publication Date
GB0318522D0 true GB0318522D0 (en) 2003-09-10
GB2404785A GB2404785A (en) 2005-02-09

Family

ID=27839801

Family Applications (2)

Application Number Title Priority Date Filing Date
GB0318522A Withdrawn GB2404785A (en) 2003-08-07 2003-08-07 Field effect transistor with organic ferroelectric gate insulator
GB0406334A Withdrawn GB2406437A (en) 2003-08-07 2004-03-22 Field effect transistor with organic ferroelectric gate insulator

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB0406334A Withdrawn GB2406437A (en) 2003-08-07 2004-03-22 Field effect transistor with organic ferroelectric gate insulator

Country Status (1)

Country Link
GB (2) GB2404785A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102723436A (en) * 2011-03-29 2012-10-10 中国科学院微电子研究所 Ferroelectric memory cell, memory and preparation method thereof
CN106479373A (en) * 2016-10-28 2017-03-08 扬州翠佛堂珠宝有限公司 A kind of emerald polishing fluid

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60113474A (en) * 1983-11-25 1985-06-19 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
US5206525A (en) * 1989-12-27 1993-04-27 Nippon Petrochemicals Co., Ltd. Electric element capable of controlling the electric conductivity of π-conjugated macromolecular materials
JPH03256360A (en) * 1990-03-06 1991-11-15 Matsushita Electric Ind Co Ltd Plastic element and its manufacture
US5981970A (en) * 1997-03-25 1999-11-09 International Business Machines Corporation Thin-film field-effect transistor with organic semiconductor requiring low operating voltages
JP2003163331A (en) * 2001-11-28 2003-06-06 Ricoh Co Ltd Nonvolatile organic semiconductor memory element and noncontact information management display
DE10200475A1 (en) * 2002-01-09 2003-07-24 Samsung Sdi Co Non-volatile memory element and display matrices made from it

Also Published As

Publication number Publication date
GB2404785A (en) 2005-02-09
GB2406437A (en) 2005-03-30
GB0406334D0 (en) 2004-04-21

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)