[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

FR3109839A1 - 3D-NAND fabrication method using a nickel or cobalt alloy - Google Patents

3D-NAND fabrication method using a nickel or cobalt alloy Download PDF

Info

Publication number
FR3109839A1
FR3109839A1 FR2100492A FR2100492A FR3109839A1 FR 3109839 A1 FR3109839 A1 FR 3109839A1 FR 2100492 A FR2100492 A FR 2100492A FR 2100492 A FR2100492 A FR 2100492A FR 3109839 A1 FR3109839 A1 FR 3109839A1
Authority
FR
France
Prior art keywords
nickel
cobalt alloy
fabrication method
nand
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR2100492A
Other languages
French (fr)
Inventor
Dominique SUHR
Vincent Mevellec
Mikaïlou Thiam
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aveni SA
Original Assignee
Aveni SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aveni SA filed Critical Aveni SA
Priority to PCT/EP2021/061174 priority Critical patent/WO2021219744A1/en
Priority to EP21721551.6A priority patent/EP4143882A1/en
Priority to CN202180046309.2A priority patent/CN116134980A/en
Priority to KR1020217033149A priority patent/KR20210150415A/en
Priority to TW110115684A priority patent/TW202208680A/en
Publication of FR3109839A1 publication Critical patent/FR3109839A1/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/1608—Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/1612—Process or apparatus coating on selected surface areas by direct patterning through irradiation means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
    • C23C18/1879—Use of metal, e.g. activation, sensitisation with noble metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • C23C18/36—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/50—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the boundary region between the core region and the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemically Coating (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Méthode de fabrication de 3D-NAND mettant en œuvre un alliage de nickel ou de cobalt L’invention se rapporte à un procédé de métallisation d’un substrat semi-conducteur destiné notamment à la fabrication d’une mémoire 3D NAND. Ce procédé de métallisation comprend une étape d’activation de la surface d’un matériau diélectrique avec un métal noble comme le palladium, suivie d’une étape de dépôt d’un alliage de nickel ou de cobalt par une procédé électroless à l’aide d’une solution comprenant des ions métalliques. Figure pour l’abrégé : Fig. 2C.Method for manufacturing 3D-NAND using a nickel or cobalt alloy The invention relates to a process for metallizing a semiconductor substrate intended in particular for manufacturing a 3D NAND memory. This metallization process includes a step of activating the surface of a dielectric material with a noble metal such as palladium, followed by a step of depositing a nickel or cobalt alloy by an electroless process using of a solution comprising metal ions. Figure for abstract: Fig. 2C.

FR2100492A 2020-04-29 2021-01-19 3D-NAND fabrication method using a nickel or cobalt alloy Pending FR3109839A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
PCT/EP2021/061174 WO2021219744A1 (en) 2020-04-29 2021-04-28 Method for fabricating 3d nand using a nickel or cobalt alloy
EP21721551.6A EP4143882A1 (en) 2020-04-29 2021-04-28 Method for fabricating 3d nand using a nickel or cobalt alloy
CN202180046309.2A CN116134980A (en) 2020-04-29 2021-04-28 Method for manufacturing 3D NAND using nickel or cobalt alloy
KR1020217033149A KR20210150415A (en) 2020-04-29 2021-04-28 3D NLD manufacturing method using nickel or cobalt alloy
TW110115684A TW202208680A (en) 2020-04-29 2021-04-29 Method for fabricating 3d nand using a nickel or cobalt alloy

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2004260 2020-04-29
FR2004260A FR3109840B1 (en) 2020-04-29 2020-04-29 Method of metallization of a semiconductor substrate, electrolyte and method of manufacturing 3D-NAND

Publications (1)

Publication Number Publication Date
FR3109839A1 true FR3109839A1 (en) 2021-11-05

Family

ID=72266406

Family Applications (2)

Application Number Title Priority Date Filing Date
FR2004260A Active FR3109840B1 (en) 2020-04-29 2020-04-29 Method of metallization of a semiconductor substrate, electrolyte and method of manufacturing 3D-NAND
FR2100492A Pending FR3109839A1 (en) 2020-04-29 2021-01-19 3D-NAND fabrication method using a nickel or cobalt alloy

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR2004260A Active FR3109840B1 (en) 2020-04-29 2020-04-29 Method of metallization of a semiconductor substrate, electrolyte and method of manufacturing 3D-NAND

Country Status (6)

Country Link
EP (1) EP4143882A1 (en)
KR (1) KR20210150415A (en)
CN (1) CN116134980A (en)
FR (2) FR3109840B1 (en)
TW (1) TW202208680A (en)
WO (1) WO2021219744A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202338155A (en) * 2022-02-07 2023-10-01 美商麥克達米德恩索龍股份有限公司 Method of metallization by a nickel or cobalt alloy for the manufacture of semiconductor devices
WO2023187473A1 (en) 2022-03-30 2023-10-05 Aveni Method of metallization with a nickel or cobalt alloy for the manufacture of semiconductor devices

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050110149A1 (en) * 2003-10-17 2005-05-26 Tetsuya Osaka Semiconductor multilayer wiring board and method of forming the same
WO2010001054A2 (en) 2008-07-01 2010-01-07 Alchimer Method of preparing an electrical insulation film and application for the metallization of through-vias
US20100207185A1 (en) * 2009-02-16 2010-08-19 Lee Sunwoo Nonvolatile Memory Device and Method of Manufacturing the Same
FR2950063A1 (en) 2009-09-11 2011-03-18 Alchimer SOLUTION AND METHOD FOR ACTIVATING THE SURFACE OF A SEMICONDUCTOR SUBSTRATE
FR2950634A1 (en) 2009-09-30 2011-04-01 Alchimer SOLUTION AND METHOD FOR ACTIVATION OF THE OXIDIZED SURFACE OF A SEMICONDUCTOR SUBSTRATE
EP2705172A2 (en) 2011-05-05 2014-03-12 Alchimer Method of depositing metallic layers based on nickel or cobalt on a semiconducting solid substrate; kit for application of said method
EP2714807A1 (en) * 2011-06-01 2014-04-09 Basf Se Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060252252A1 (en) * 2005-03-18 2006-11-09 Zhize Zhu Electroless deposition processes and compositions for forming interconnects
CN110383478B (en) * 2017-03-09 2023-06-27 东京毅力科创株式会社 Method for manufacturing contact pad, method for manufacturing semiconductor device using the same, and semiconductor device
CN110289265B (en) * 2019-06-28 2020-04-10 长江存储科技有限责任公司 Method for forming 3D NAND memory

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050110149A1 (en) * 2003-10-17 2005-05-26 Tetsuya Osaka Semiconductor multilayer wiring board and method of forming the same
WO2010001054A2 (en) 2008-07-01 2010-01-07 Alchimer Method of preparing an electrical insulation film and application for the metallization of through-vias
US20100207185A1 (en) * 2009-02-16 2010-08-19 Lee Sunwoo Nonvolatile Memory Device and Method of Manufacturing the Same
FR2950063A1 (en) 2009-09-11 2011-03-18 Alchimer SOLUTION AND METHOD FOR ACTIVATING THE SURFACE OF A SEMICONDUCTOR SUBSTRATE
FR2950634A1 (en) 2009-09-30 2011-04-01 Alchimer SOLUTION AND METHOD FOR ACTIVATION OF THE OXIDIZED SURFACE OF A SEMICONDUCTOR SUBSTRATE
EP2705172A2 (en) 2011-05-05 2014-03-12 Alchimer Method of depositing metallic layers based on nickel or cobalt on a semiconducting solid substrate; kit for application of said method
EP2714807A1 (en) * 2011-06-01 2014-04-09 Basf Se Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
CAS , no. 25987-06-8
CAS, no. 9002-98-6
ZHANG JUNHONG ET AL: "Preparation and properties of electroless deposited NiB as barrier layer", 2014 JOINT IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRIC, INTERNATIONAL WORKSHOP ON ACOUSTIC TRANSDUCTION MATERIALS AND DEVICES & WORKSHOP ON PIEZORESPONSE FORCE MICROSCOPY, IEEE, 12 May 2014 (2014-05-12), pages 320 - 323, XP032655495, DOI: 10.1109/ISAF.2014.6917873 *

Also Published As

Publication number Publication date
CN116134980A (en) 2023-05-16
WO2021219744A1 (en) 2021-11-04
KR20210150415A (en) 2021-12-10
FR3109840B1 (en) 2022-05-13
EP4143882A1 (en) 2023-03-08
TW202208680A (en) 2022-03-01
FR3109840A1 (en) 2021-11-05

Similar Documents

Publication Publication Date Title
FR3109839A1 (en) 3D-NAND fabrication method using a nickel or cobalt alloy
WO2006102180A3 (en) Contact metallization methods and processes
JP5486821B2 (en) Electroless copper plating method and embedded wiring forming method
WO2008096648A1 (en) Target formed of sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride, or high-melting point metal boride, process for producing the target, assembly of the sputtering target-backing plate, and process for produc
MA50169B1 (en) Process for producing an electrocatalyst
JP2016072352A (en) Semiconductor device manufacturing method
CN103827349A (en) Sputtering target and manufacturing method therefor
CN101338408A (en) Brittle metall alloy sputtering targets and method of fabricating same
CN105296971B (en) Electroless plating is carried out using at least two borane reduction agent
CN103510055A (en) Preparation method of high-purity copper target material
FR3062324B1 (en) PROCESS FOR MANUFACTURING PARTS PRODUCED IN METALLURGY OF POWDERS COMPRISING THE APPLICATION OF A COATING
TW200943424A (en) Substrate and method for manufacturing the same
SG11201909369RA (en) Electroless plating process
TWI552339B (en) Semiconductor device and method for manufacturing semiconductor device
CN101911257B (en) ULSI micro-interconnect member having ruthenium electroplating layer on barrier layer
TWI351387B (en)
KR20130121041A (en) Semiconductor reflow processing for high aspect ratio fill
KR20130087493A (en) Metallization processes, mixtures, and electronic devices
WO2017066069A8 (en) Water soluble and air stable phosphaadamantanes as stabilizers for electroless metal deposition
TW200943423A (en) Substrate and method of making same
CN110854101B (en) Semiconductor device and formation thereof
CN102054712A (en) Method for controlling surface roughness of circuit board
US11119344B2 (en) Manufacturing method of flexible display, flexible display, and display device
MX2020013493A (en) Hot press-formed item manufacturing method, press-formed item, die, and die set.
TW200710290A (en) Method and system for forming a variable thickness seed layer

Legal Events

Date Code Title Description
PLSC Publication of the preliminary search report

Effective date: 20211105

PLFP Fee payment

Year of fee payment: 2

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4