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FR3029000B1 - Dispositif de memoire non volatile compact - Google Patents

Dispositif de memoire non volatile compact

Info

Publication number
FR3029000B1
FR3029000B1 FR1461339A FR1461339A FR3029000B1 FR 3029000 B1 FR3029000 B1 FR 3029000B1 FR 1461339 A FR1461339 A FR 1461339A FR 1461339 A FR1461339 A FR 1461339A FR 3029000 B1 FR3029000 B1 FR 3029000B1
Authority
FR
France
Prior art keywords
memory device
volatile memory
compact non
compact
volatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1461339A
Other languages
English (en)
Other versions
FR3029000A1 (fr
Inventor
Francois Tailliet
Marc Battista
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1461339A priority Critical patent/FR3029000B1/fr
Priority to US14/849,257 priority patent/US10403368B2/en
Publication of FR3029000A1 publication Critical patent/FR3029000A1/fr
Application granted granted Critical
Publication of FR3029000B1 publication Critical patent/FR3029000B1/fr
Priority to US16/511,703 priority patent/US11393537B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
FR1461339A 2014-11-24 2014-11-24 Dispositif de memoire non volatile compact Expired - Fee Related FR3029000B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1461339A FR3029000B1 (fr) 2014-11-24 2014-11-24 Dispositif de memoire non volatile compact
US14/849,257 US10403368B2 (en) 2014-11-24 2015-09-09 Compact non-volatile memory device
US16/511,703 US11393537B2 (en) 2014-11-24 2019-07-15 Compact non-volatile memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1461339A FR3029000B1 (fr) 2014-11-24 2014-11-24 Dispositif de memoire non volatile compact

Publications (2)

Publication Number Publication Date
FR3029000A1 FR3029000A1 (fr) 2016-05-27
FR3029000B1 true FR3029000B1 (fr) 2017-12-22

Family

ID=52273346

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1461339A Expired - Fee Related FR3029000B1 (fr) 2014-11-24 2014-11-24 Dispositif de memoire non volatile compact

Country Status (2)

Country Link
US (2) US10403368B2 (fr)
FR (1) FR3029000B1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3029343B1 (fr) 2014-11-27 2018-03-30 Stmicroelectronics (Rousset) Sas Dispositif compact de memoire de type electriquement effacable et programmable
FR3048115B1 (fr) 2016-02-18 2018-07-13 Stmicroelectronics (Rousset) Sas Dispositif et procede de gestion du claquage de transistors d'acces de memoire eeprom.
FR3107139B1 (fr) 2020-02-06 2022-07-29 St Microelectronics Rousset Dispositif de mémoire EEPROM et procédé d’écriture correspondant
FR3136583A1 (fr) 2022-06-08 2023-12-15 Stmicroelectronics (Rousset) Sas Dispositif de verrou, en particulier pour le décodage rangée et le décodage colonne d’un plan mémoire EEPROM
FR3139658A1 (fr) * 2022-09-08 2024-03-15 Stmicroelectronics (Rousset) Sas Dispositif de du type mémoire EEPROM à architecture du type à « tension partagée ».

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6134144A (en) * 1997-09-19 2000-10-17 Integrated Memory Technologies, Inc. Flash memory array
JP2000021183A (ja) * 1998-06-30 2000-01-21 Matsushita Electric Ind Co Ltd 半導体不揮発性メモリ
JP3874234B2 (ja) * 2000-04-06 2007-01-31 株式会社ルネサステクノロジ 半導体集積回路装置
US7369445B2 (en) * 2001-07-20 2008-05-06 Samsung Electronics Co., Ltd. Methods of operating memory systems including memory devices set to different operating modes and related systems
EP1451969A2 (fr) * 2001-11-27 2004-09-01 Koninklijke Philips Electronics N.V. Dispositif semi-conducteur comprenant une memoire eeprom effa able par octets
US6906376B1 (en) * 2002-06-13 2005-06-14 A Plus Flash Technology, Inc. EEPROM cell structure and array architecture
US6862223B1 (en) * 2002-07-05 2005-03-01 Aplus Flash Technology, Inc. Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
ITMI20022240A1 (it) * 2002-10-22 2004-04-23 Atmel Corp Architettura di memoria flash con cancellazione di modo
US7317633B2 (en) * 2004-07-06 2008-01-08 Saifun Semiconductors Ltd Protection of NROM devices from charge damage
US20130043452A1 (en) * 2011-08-15 2013-02-21 Unity Semiconductor Corporation Structures And Methods For Facilitating Enhanced Cycling Endurance Of Memory Accesses To Re-Writable Non Volatile Two Terminal Memory Elements
KR100764060B1 (ko) * 2006-09-29 2007-10-09 삼성전자주식회사 불휘발성 메모리 장치 및 시스템 그리고 그것을 위한메모리 셀 어레이 구조
JP2010267341A (ja) * 2009-05-15 2010-11-25 Renesas Electronics Corp 半導体装置

Also Published As

Publication number Publication date
US10403368B2 (en) 2019-09-03
FR3029000A1 (fr) 2016-05-27
US20190341114A1 (en) 2019-11-07
US11393537B2 (en) 2022-07-19
US20160148697A1 (en) 2016-05-26

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