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FR3096856B1 - Capteur d'image et son procédé de commande - Google Patents

Capteur d'image et son procédé de commande Download PDF

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Publication number
FR3096856B1
FR3096856B1 FR1905862A FR1905862A FR3096856B1 FR 3096856 B1 FR3096856 B1 FR 3096856B1 FR 1905862 A FR1905862 A FR 1905862A FR 1905862 A FR1905862 A FR 1905862A FR 3096856 B1 FR3096856 B1 FR 3096856B1
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FR
France
Prior art keywords
node
control method
image sensor
switch
internal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1905862A
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English (en)
Other versions
FR3096856A1 (fr
Inventor
Laurent Simony
Pierre Malinge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
STMicroelectronics Grenoble 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
STMicroelectronics Grenoble 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS, STMicroelectronics Grenoble 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR1905862A priority Critical patent/FR3096856B1/fr
Priority to US16/890,944 priority patent/US11212475B2/en
Priority to CN202010493833.1A priority patent/CN112040153B/zh
Priority to CN202020991008.XU priority patent/CN212278339U/zh
Publication of FR3096856A1 publication Critical patent/FR3096856A1/fr
Application granted granted Critical
Publication of FR3096856B1 publication Critical patent/FR3096856B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)

Abstract

Capteur d'image et son procédé de commande La présente description concerne un capteur comprenant des pixels (1) comportant chacun :un premier transistor (118) et un premier interrupteur (120) en série entre un premier noeud (124) et un noeud (122) interne du pixel, une grille du premier transistor (118) étant couplée à un deuxième noeud (106) ;un élément capacitif (110) dont une première borne est connectée au deuxième noeud ; et plusieurs ensembles (A, B) comprenant chacun une capacité (128) en série avec un deuxième interrupteur (130) connecté au noeud interne, le capteur comprenant un circuit (150) configuré pour, lors de chaque mémorisation d'une tension dans un des ensembles (A, B), commander l'interruption d'un courant entre le premier noeud (124) et le noeud interne (122) :en commutant un premier potentiel (Vech) appliqué à une deuxième borne (112) de l'élément capacitif ; ou en ouvrant le premier interrupteur (120). Figure pour l'abrégé : Fig. 1
FR1905862A 2019-06-03 2019-06-03 Capteur d'image et son procédé de commande Active FR3096856B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1905862A FR3096856B1 (fr) 2019-06-03 2019-06-03 Capteur d'image et son procédé de commande
US16/890,944 US11212475B2 (en) 2019-06-03 2020-06-02 Image sensor and method for controlling same
CN202010493833.1A CN112040153B (zh) 2019-06-03 2020-06-03 图像传感器及用于控制图像传感器的方法
CN202020991008.XU CN212278339U (zh) 2019-06-03 2020-06-03 图像传感器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1905862 2019-06-03
FR1905862A FR3096856B1 (fr) 2019-06-03 2019-06-03 Capteur d'image et son procédé de commande

Publications (2)

Publication Number Publication Date
FR3096856A1 FR3096856A1 (fr) 2020-12-04
FR3096856B1 true FR3096856B1 (fr) 2021-06-25

Family

ID=68138371

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1905862A Active FR3096856B1 (fr) 2019-06-03 2019-06-03 Capteur d'image et son procédé de commande

Country Status (3)

Country Link
US (1) US11212475B2 (fr)
CN (2) CN112040153B (fr)
FR (1) FR3096856B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3094598A1 (fr) * 2019-03-29 2020-10-02 Stmicroelectronics (Grenoble 2) Sas Pixel et son procédé de commande
FR3096855B1 (fr) 2019-06-03 2022-08-05 St Microelectronics Grenoble 2 Capteur d'image et son procédé de commande
US20220278892A1 (en) * 2021-03-01 2022-09-01 Lenovo (Singapore) Pte. Ltd. Device and method for controlling communication of information

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US6903771B2 (en) * 2000-03-02 2005-06-07 Canon Kabushiki Kaisha Image pickup apparatus
US6727946B1 (en) * 1999-12-14 2004-04-27 Omnivision Technologies, Inc. APS soft reset circuit for reducing image lag
US6919551B2 (en) * 2002-08-29 2005-07-19 Micron Technology Inc. Differential column readout scheme for CMOS APS pixels
US7365784B2 (en) * 2003-04-15 2008-04-29 Micron Technology, Inc. Column sample-and-hold cell for CMOS APS sensor
FR2854529A1 (fr) 2003-04-30 2004-11-05 St Microelectronics Sa Procede d'echantillonnage du signal delivre par un pixel actif d'un capteur d'image, et capteur correspondant
GB0411648D0 (en) 2004-05-25 2004-06-30 Fillfactory N V Method and pixel for performing correlated double sampling
US20080122962A1 (en) 2006-11-29 2008-05-29 Omnivision Technologies, Inc. Image sensors with output noise reduction mechanisms
EP2587794B1 (fr) 2008-04-07 2022-05-04 Cmosis NV Pixel et réseau de pixels avec obturateur global
US20100271517A1 (en) * 2009-04-24 2010-10-28 Yannick De Wit In-pixel correlated double sampling pixel
US20110019045A1 (en) * 2009-07-26 2011-01-27 Chi-Shao Lin Method and apparatus for simultaneous electronic shutter action frame storage and correlated double sampling in image sensor
JP2011229120A (ja) 2010-03-30 2011-11-10 Sony Corp 固体撮像装置、固体撮像装置の信号処理方法、及び、電子機器
WO2011155442A1 (fr) * 2010-06-11 2011-12-15 株式会社ブルックマンテクノロジ Imageur à semi-conducteurs de type amplification
FR2971621B1 (fr) * 2011-02-10 2013-02-08 E2V Semiconductors Capteur d'image lineaire a deux lignes et a pixels partages
KR20130072804A (ko) 2011-12-22 2013-07-02 에스케이하이닉스 주식회사 신호 샘플링 회로 및 이를 포함하는 이미지 센서
CN103259985B (zh) * 2013-05-17 2016-08-17 昆山锐芯微电子有限公司 Cmos图像传感器、像素单元及其控制方法
US10154222B2 (en) 2014-11-17 2018-12-11 Tohoku University Optical sensor, signal reading method therefor, solid-state imaging device, and signal reading method therefor
US9591245B2 (en) * 2015-04-14 2017-03-07 Semiconductor Components Industries, Llc Image sensor pixels with adjustable body bias
FR3039928B1 (fr) * 2015-08-03 2019-06-07 Teledyne E2V Semiconductors Sas Procede de commande d'un capteur d'image a pixels actifs
JP6736906B2 (ja) * 2016-02-18 2020-08-05 株式会社リコー 固体撮像装置及び画像読み取り装置
CN107333074B (zh) * 2016-04-29 2020-03-27 思特威(上海)电子科技有限公司 成像装置、成像方法及图像传感器读取方法
US10192922B2 (en) * 2016-06-07 2019-01-29 Semiconductor Components Industries, Llc Charge packet signal processing using pinned photodiode devices
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FR3094598A1 (fr) 2019-03-29 2020-10-02 Stmicroelectronics (Grenoble 2) Sas Pixel et son procédé de commande
FR3096855B1 (fr) 2019-06-03 2022-08-05 St Microelectronics Grenoble 2 Capteur d'image et son procédé de commande

Also Published As

Publication number Publication date
FR3096856A1 (fr) 2020-12-04
CN112040153A (zh) 2020-12-04
US20200382731A1 (en) 2020-12-03
US11212475B2 (en) 2021-12-28
CN212278339U (zh) 2021-01-01
CN112040153B (zh) 2023-06-02

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