FR2924270B1 - Procede de fabrication d'un dispositif electronique - Google Patents
Procede de fabrication d'un dispositif electroniqueInfo
- Publication number
- FR2924270B1 FR2924270B1 FR0759328A FR0759328A FR2924270B1 FR 2924270 B1 FR2924270 B1 FR 2924270B1 FR 0759328 A FR0759328 A FR 0759328A FR 0759328 A FR0759328 A FR 0759328A FR 2924270 B1 FR2924270 B1 FR 2924270B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- electronic device
- electronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/432—Heterojunction gate for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M13/00—Coding, decoding or code conversion, for error detection or error correction; Coding theory basic assumptions; Coding bounds; Error probability evaluation methods; Channel models; Simulation or testing of codes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M13/00—Coding, decoding or code conversion, for error detection or error correction; Coding theory basic assumptions; Coding bounds; Error probability evaluation methods; Channel models; Simulation or testing of codes
- H03M13/03—Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words
- H03M13/05—Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words using block codes, i.e. a predetermined number of check bits joined to a predetermined number of information bits
- H03M13/13—Linear codes
- H03M13/15—Cyclic codes, i.e. cyclic shifts of codewords produce other codewords, e.g. codes defined by a generator polynomial, Bose-Chaudhuri-Hocquenghem [BCH] codes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Probability & Statistics with Applications (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Algebra (AREA)
- Mathematical Physics (AREA)
- Pure & Applied Mathematics (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0759328A FR2924270B1 (fr) | 2007-11-27 | 2007-11-27 | Procede de fabrication d'un dispositif electronique |
JP2010534503A JP2011505064A (ja) | 2007-11-27 | 2008-11-26 | 電子デバイスの作製プロセス |
PCT/EP2008/066258 WO2009068571A1 (fr) | 2007-11-27 | 2008-11-26 | Procédé de fabrication d'un dispositif électronique |
CN200880117101XA CN101878532A (zh) | 2007-11-27 | 2008-11-26 | 制造电子器件的工艺 |
KR1020107011363A KR20100087022A (ko) | 2007-11-27 | 2008-11-26 | 전자 디바이스를 제조하기 위한 프로세스 |
DE112008002817T DE112008002817T5 (de) | 2007-11-27 | 2008-11-26 | Verfahren zum Herstellen eines elektronischen Bauelements |
US12/787,840 US20100258898A1 (en) | 2007-11-27 | 2010-05-26 | Process for fabricating an electronic device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0759328A FR2924270B1 (fr) | 2007-11-27 | 2007-11-27 | Procede de fabrication d'un dispositif electronique |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2924270A1 FR2924270A1 (fr) | 2009-05-29 |
FR2924270B1 true FR2924270B1 (fr) | 2010-08-27 |
Family
ID=39327283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0759328A Expired - Fee Related FR2924270B1 (fr) | 2007-11-27 | 2007-11-27 | Procede de fabrication d'un dispositif electronique |
Country Status (7)
Country | Link |
---|---|
US (1) | US20100258898A1 (fr) |
JP (1) | JP2011505064A (fr) |
KR (1) | KR20100087022A (fr) |
CN (1) | CN101878532A (fr) |
DE (1) | DE112008002817T5 (fr) |
FR (1) | FR2924270B1 (fr) |
WO (1) | WO2009068571A1 (fr) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5724339B2 (ja) * | 2010-12-03 | 2015-05-27 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
JP2012156332A (ja) * | 2011-01-26 | 2012-08-16 | Toshiba Corp | 半導体素子 |
FR2974242B1 (fr) * | 2011-04-14 | 2013-09-27 | Thales Sa | Amelioration des proprietes de transport dans les transistors hemts composes de semi-conducteurs bores a larges bande interdite (iii-b)-n |
CN107653490A (zh) * | 2011-09-08 | 2018-02-02 | 株式会社田村制作所 | 晶体层叠结构体 |
US9093420B2 (en) | 2012-04-18 | 2015-07-28 | Rf Micro Devices, Inc. | Methods for fabricating high voltage field effect transistor finger terminations |
US9124221B2 (en) | 2012-07-16 | 2015-09-01 | Rf Micro Devices, Inc. | Wide bandwidth radio frequency amplier having dual gate transistors |
US9202874B2 (en) | 2012-08-24 | 2015-12-01 | Rf Micro Devices, Inc. | Gallium nitride (GaN) device with leakage current-based over-voltage protection |
US9147632B2 (en) | 2012-08-24 | 2015-09-29 | Rf Micro Devices, Inc. | Semiconductor device having improved heat dissipation |
US9142620B2 (en) | 2012-08-24 | 2015-09-22 | Rf Micro Devices, Inc. | Power device packaging having backmetals couple the plurality of bond pads to the die backside |
US8988097B2 (en) | 2012-08-24 | 2015-03-24 | Rf Micro Devices, Inc. | Method for on-wafer high voltage testing of semiconductor devices |
US9917080B2 (en) | 2012-08-24 | 2018-03-13 | Qorvo US. Inc. | Semiconductor device with electrical overstress (EOS) protection |
WO2014035794A1 (fr) | 2012-08-27 | 2014-03-06 | Rf Micro Devices, Inc | Dispositif latéral à semi-conducteur à région verticale de claquage |
US9070761B2 (en) | 2012-08-27 | 2015-06-30 | Rf Micro Devices, Inc. | Field effect transistor (FET) having fingers with rippled edges |
US9325281B2 (en) | 2012-10-30 | 2016-04-26 | Rf Micro Devices, Inc. | Power amplifier controller |
US9455327B2 (en) | 2014-06-06 | 2016-09-27 | Qorvo Us, Inc. | Schottky gated transistor with interfacial layer |
US9536803B2 (en) | 2014-09-05 | 2017-01-03 | Qorvo Us, Inc. | Integrated power module with improved isolation and thermal conductivity |
US10615158B2 (en) | 2015-02-04 | 2020-04-07 | Qorvo Us, Inc. | Transition frequency multiplier semiconductor device |
US10062684B2 (en) | 2015-02-04 | 2018-08-28 | Qorvo Us, Inc. | Transition frequency multiplier semiconductor device |
JP7024534B2 (ja) * | 2018-03-20 | 2022-02-24 | 富士通株式会社 | 半導体装置及びその製造方法 |
JP7232074B2 (ja) * | 2019-02-19 | 2023-03-02 | 住友化学株式会社 | Iii族窒化物半導体装置およびエッチング装置 |
CN112713183B (zh) * | 2020-12-28 | 2022-06-10 | 光华临港工程应用技术研发(上海)有限公司 | 气体传感器的制备方法及气体传感器 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5234848A (en) * | 1991-11-05 | 1993-08-10 | Texas Instruments Incorporated | Method for fabricating lateral resonant tunneling transistor with heterojunction barriers |
JP4041075B2 (ja) * | 2004-02-27 | 2008-01-30 | 株式会社東芝 | 半導体装置 |
US7238560B2 (en) * | 2004-07-23 | 2007-07-03 | Cree, Inc. | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate |
US7276976B2 (en) * | 2004-12-02 | 2007-10-02 | Electronics And Telecommunications Research Institute | Triple cascode power amplifier of inner parallel configuration with dynamic gate bias technique |
JP4916671B2 (ja) * | 2005-03-31 | 2012-04-18 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
JP4986406B2 (ja) * | 2005-03-31 | 2012-07-25 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
JP5051980B2 (ja) * | 2005-03-31 | 2012-10-17 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
-
2007
- 2007-11-27 FR FR0759328A patent/FR2924270B1/fr not_active Expired - Fee Related
-
2008
- 2008-11-26 KR KR1020107011363A patent/KR20100087022A/ko not_active Application Discontinuation
- 2008-11-26 CN CN200880117101XA patent/CN101878532A/zh active Pending
- 2008-11-26 DE DE112008002817T patent/DE112008002817T5/de not_active Withdrawn
- 2008-11-26 WO PCT/EP2008/066258 patent/WO2009068571A1/fr active Application Filing
- 2008-11-26 JP JP2010534503A patent/JP2011505064A/ja not_active Withdrawn
-
2010
- 2010-05-26 US US12/787,840 patent/US20100258898A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN101878532A (zh) | 2010-11-03 |
KR20100087022A (ko) | 2010-08-02 |
JP2011505064A (ja) | 2011-02-17 |
DE112008002817T5 (de) | 2011-01-27 |
WO2009068571A1 (fr) | 2009-06-04 |
FR2924270A1 (fr) | 2009-05-29 |
US20100258898A1 (en) | 2010-10-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20130731 |