FR2919428B1 - OPTOELECTRONIC COMPONENT ELECTRODE COMPRISING AT LEAST ONE LAYER OF A TRANSPARENT OXIDE COATED WITH A METAL LAYER AND CORRESPONDING OPTOELECTRONIC COMPONENT. - Google Patents
OPTOELECTRONIC COMPONENT ELECTRODE COMPRISING AT LEAST ONE LAYER OF A TRANSPARENT OXIDE COATED WITH A METAL LAYER AND CORRESPONDING OPTOELECTRONIC COMPONENT.Info
- Publication number
- FR2919428B1 FR2919428B1 FR0705502A FR0705502A FR2919428B1 FR 2919428 B1 FR2919428 B1 FR 2919428B1 FR 0705502 A FR0705502 A FR 0705502A FR 0705502 A FR0705502 A FR 0705502A FR 2919428 B1 FR2919428 B1 FR 2919428B1
- Authority
- FR
- France
- Prior art keywords
- optoelectronic component
- layer
- oxide coated
- transparent oxide
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005693 optoelectronics Effects 0.000 title 2
- 239000002184 metal Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
- H10K85/146—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE poly N-vinylcarbazol; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Electroluminescent Light Sources (AREA)
- Non-Insulated Conductors (AREA)
- Laminated Bodies (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0705502A FR2919428B1 (en) | 2007-07-27 | 2007-07-27 | OPTOELECTRONIC COMPONENT ELECTRODE COMPRISING AT LEAST ONE LAYER OF A TRANSPARENT OXIDE COATED WITH A METAL LAYER AND CORRESPONDING OPTOELECTRONIC COMPONENT. |
PCT/EP2008/059719 WO2009016092A2 (en) | 2007-07-27 | 2008-07-24 | Organic optoelectronic component electrode, comprising at least one layer of a transparent oxide coated with a metallic layer, and corresponding organic optoelectronic component |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0705502A FR2919428B1 (en) | 2007-07-27 | 2007-07-27 | OPTOELECTRONIC COMPONENT ELECTRODE COMPRISING AT LEAST ONE LAYER OF A TRANSPARENT OXIDE COATED WITH A METAL LAYER AND CORRESPONDING OPTOELECTRONIC COMPONENT. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2919428A1 FR2919428A1 (en) | 2009-01-30 |
FR2919428B1 true FR2919428B1 (en) | 2010-01-01 |
Family
ID=39272484
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0705502A Expired - Fee Related FR2919428B1 (en) | 2007-07-27 | 2007-07-27 | OPTOELECTRONIC COMPONENT ELECTRODE COMPRISING AT LEAST ONE LAYER OF A TRANSPARENT OXIDE COATED WITH A METAL LAYER AND CORRESPONDING OPTOELECTRONIC COMPONENT. |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR2919428B1 (en) |
WO (1) | WO2009016092A2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2256839B1 (en) | 2009-05-28 | 2019-03-27 | IMEC vzw | Single junction or a multijunction photovoltaic cells and method for their fabrication |
ES2364309B1 (en) | 2010-02-19 | 2012-08-13 | Institut De Ciencies Fotoniques, Fundacio Privada | TRANSPARENT ELECTRODE BASED ON THE COMBINATION OF OXIDES, METALS AND TRANSPARENT DRIVING OXIDES. |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4584427A (en) * | 1984-10-22 | 1986-04-22 | Atlantic Richfield Company | Thin film solar cell with free tin on tin oxide transparent conductor |
JPS61203667A (en) * | 1985-03-06 | 1986-09-09 | Fujitsu Ltd | Amorphous silicon-type photo-diode |
JPH10308285A (en) * | 1997-05-01 | 1998-11-17 | Asahi Glass Co Ltd | Organic electroluminescent element and electrode structure thereof |
DE102005027961A1 (en) * | 2005-06-16 | 2007-01-04 | Siemens Ag | Semitransparent multilayer electrode |
KR100696529B1 (en) * | 2005-08-02 | 2007-03-19 | 삼성에스디아이 주식회사 | Electrode for photoelectric conversion device including metal elements and dye sensitized solar cell using the same |
-
2007
- 2007-07-27 FR FR0705502A patent/FR2919428B1/en not_active Expired - Fee Related
-
2008
- 2008-07-24 WO PCT/EP2008/059719 patent/WO2009016092A2/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
FR2919428A1 (en) | 2009-01-30 |
WO2009016092A2 (en) | 2009-02-05 |
WO2009016092A3 (en) | 2009-04-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
MA35106B1 (en) | Glass with an electrical connection element | |
TW200639378A (en) | A sensor | |
FR2937366B1 (en) | MULTIPLE GLAZING INCORPORATING AT LEAST ONE ANTIREFLECTION COATING AND USE OF ANTIREFLECTION COATING IN MULTIPLE GLAZING | |
FR2922886B1 (en) | GLASS SUBSTRATE COATED WITH LAYERS WITH IMPROVED RESISTIVITY. | |
WO2007096565A3 (en) | Organic light-emitting device and use of a transparent electroconductive layer in an organic light-emitting device | |
BRPI0912295A2 (en) | metallic material with an applied bismuth film and method for its production, liquid for surface treatment used in the method, and metal material coated with cationic electrodeposition and method for its production | |
BRPI0919445A2 (en) | substrate manufacturing process, notably transparent glass substrates, substrate assembly, and glazing assembly. | |
EP1715366B8 (en) | Optical package, optical lens and backlight assembly having the same | |
WO2007104020A3 (en) | Electro-optic display with edge seal | |
EP2568363A3 (en) | Window substrate and display device having the same | |
MX2012001436A (en) | Panel having optically transparent sensor field. | |
MX2009013566A (en) | Appliance transparency. | |
EP1816489A3 (en) | Optical article and manufacturing method of the same | |
EP2075295A4 (en) | Coating solution and coated paper coated with the same | |
BRPI0511940A (en) | coated wire | |
WO2010056055A3 (en) | Touch screen and manufacturing method thereof | |
WO2011133618A3 (en) | Metal detectable lens | |
WO2008115568A8 (en) | High contrast decorative sheets and laminates | |
WO2008042715A3 (en) | Click value determination with incentive schemes for website visitors and advertisers | |
FR2948975B1 (en) | PRECONTRAINING DEVICE WITH CIRCUMFERENTIAL ACTION | |
DK1921415T3 (en) | Protective cover | |
FR2891269B1 (en) | TRANSPARENT SUBSTRATE WITH ELECTRODE | |
FR2919428B1 (en) | OPTOELECTRONIC COMPONENT ELECTRODE COMPRISING AT LEAST ONE LAYER OF A TRANSPARENT OXIDE COATED WITH A METAL LAYER AND CORRESPONDING OPTOELECTRONIC COMPONENT. | |
WO2007142789A3 (en) | Shallow semiconductor sensor with fluorescent molecule layer that eliminates optical and electronic crosstalk | |
NL1033024A1 (en) | Interferometer with slight deviation ('walk-off'). |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20130329 |