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FR2919428B1 - OPTOELECTRONIC COMPONENT ELECTRODE COMPRISING AT LEAST ONE LAYER OF A TRANSPARENT OXIDE COATED WITH A METAL LAYER AND CORRESPONDING OPTOELECTRONIC COMPONENT. - Google Patents

OPTOELECTRONIC COMPONENT ELECTRODE COMPRISING AT LEAST ONE LAYER OF A TRANSPARENT OXIDE COATED WITH A METAL LAYER AND CORRESPONDING OPTOELECTRONIC COMPONENT.

Info

Publication number
FR2919428B1
FR2919428B1 FR0705502A FR0705502A FR2919428B1 FR 2919428 B1 FR2919428 B1 FR 2919428B1 FR 0705502 A FR0705502 A FR 0705502A FR 0705502 A FR0705502 A FR 0705502A FR 2919428 B1 FR2919428 B1 FR 2919428B1
Authority
FR
France
Prior art keywords
optoelectronic component
layer
oxide coated
transparent oxide
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0705502A
Other languages
French (fr)
Other versions
FR2919428A1 (en
Inventor
Jean Christian Bernede
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universite de Nantes
Original Assignee
Universite de Nantes
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universite de Nantes filed Critical Universite de Nantes
Priority to FR0705502A priority Critical patent/FR2919428B1/en
Priority to PCT/EP2008/059719 priority patent/WO2009016092A2/en
Publication of FR2919428A1 publication Critical patent/FR2919428A1/en
Application granted granted Critical
Publication of FR2919428B1 publication Critical patent/FR2919428B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022466Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022466Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022466Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • H01L33/42Transparent materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • H10K30/81Electrodes
    • H10K30/82Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/141Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H10K85/146Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE poly N-vinylcarbazol; Derivatives thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/321Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Non-Insulated Conductors (AREA)
  • Laminated Bodies (AREA)
FR0705502A 2007-07-27 2007-07-27 OPTOELECTRONIC COMPONENT ELECTRODE COMPRISING AT LEAST ONE LAYER OF A TRANSPARENT OXIDE COATED WITH A METAL LAYER AND CORRESPONDING OPTOELECTRONIC COMPONENT. Expired - Fee Related FR2919428B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0705502A FR2919428B1 (en) 2007-07-27 2007-07-27 OPTOELECTRONIC COMPONENT ELECTRODE COMPRISING AT LEAST ONE LAYER OF A TRANSPARENT OXIDE COATED WITH A METAL LAYER AND CORRESPONDING OPTOELECTRONIC COMPONENT.
PCT/EP2008/059719 WO2009016092A2 (en) 2007-07-27 2008-07-24 Organic optoelectronic component electrode, comprising at least one layer of a transparent oxide coated with a metallic layer, and corresponding organic optoelectronic component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0705502A FR2919428B1 (en) 2007-07-27 2007-07-27 OPTOELECTRONIC COMPONENT ELECTRODE COMPRISING AT LEAST ONE LAYER OF A TRANSPARENT OXIDE COATED WITH A METAL LAYER AND CORRESPONDING OPTOELECTRONIC COMPONENT.

Publications (2)

Publication Number Publication Date
FR2919428A1 FR2919428A1 (en) 2009-01-30
FR2919428B1 true FR2919428B1 (en) 2010-01-01

Family

ID=39272484

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0705502A Expired - Fee Related FR2919428B1 (en) 2007-07-27 2007-07-27 OPTOELECTRONIC COMPONENT ELECTRODE COMPRISING AT LEAST ONE LAYER OF A TRANSPARENT OXIDE COATED WITH A METAL LAYER AND CORRESPONDING OPTOELECTRONIC COMPONENT.

Country Status (2)

Country Link
FR (1) FR2919428B1 (en)
WO (1) WO2009016092A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2256839B1 (en) 2009-05-28 2019-03-27 IMEC vzw Single junction or a multijunction photovoltaic cells and method for their fabrication
ES2364309B1 (en) 2010-02-19 2012-08-13 Institut De Ciencies Fotoniques, Fundacio Privada TRANSPARENT ELECTRODE BASED ON THE COMBINATION OF OXIDES, METALS AND TRANSPARENT DRIVING OXIDES.

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4584427A (en) * 1984-10-22 1986-04-22 Atlantic Richfield Company Thin film solar cell with free tin on tin oxide transparent conductor
JPS61203667A (en) * 1985-03-06 1986-09-09 Fujitsu Ltd Amorphous silicon-type photo-diode
JPH10308285A (en) * 1997-05-01 1998-11-17 Asahi Glass Co Ltd Organic electroluminescent element and electrode structure thereof
DE102005027961A1 (en) * 2005-06-16 2007-01-04 Siemens Ag Semitransparent multilayer electrode
KR100696529B1 (en) * 2005-08-02 2007-03-19 삼성에스디아이 주식회사 Electrode for photoelectric conversion device including metal elements and dye sensitized solar cell using the same

Also Published As

Publication number Publication date
FR2919428A1 (en) 2009-01-30
WO2009016092A2 (en) 2009-02-05
WO2009016092A3 (en) 2009-04-23

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20130329