FR2911005B1 - Transistor mos adapte a la tenue de forts courants - Google Patents
Transistor mos adapte a la tenue de forts courantsInfo
- Publication number
- FR2911005B1 FR2911005B1 FR0655981A FR0655981A FR2911005B1 FR 2911005 B1 FR2911005 B1 FR 2911005B1 FR 0655981 A FR0655981 A FR 0655981A FR 0655981 A FR0655981 A FR 0655981A FR 2911005 B1 FR2911005 B1 FR 2911005B1
- Authority
- FR
- France
- Prior art keywords
- forts
- transistor mos
- keep strong
- keep
- strong
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0655981A FR2911005B1 (fr) | 2006-12-27 | 2006-12-27 | Transistor mos adapte a la tenue de forts courants |
US11/964,438 US7829958B2 (en) | 2006-12-27 | 2007-12-26 | MOS transistor capable of withstanding significant currents |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0655981A FR2911005B1 (fr) | 2006-12-27 | 2006-12-27 | Transistor mos adapte a la tenue de forts courants |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2911005A1 FR2911005A1 (fr) | 2008-07-04 |
FR2911005B1 true FR2911005B1 (fr) | 2009-06-12 |
Family
ID=38523223
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0655981A Expired - Fee Related FR2911005B1 (fr) | 2006-12-27 | 2006-12-27 | Transistor mos adapte a la tenue de forts courants |
Country Status (2)
Country | Link |
---|---|
US (1) | US7829958B2 (fr) |
FR (1) | FR2911005B1 (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7230302B2 (en) | 2004-01-29 | 2007-06-12 | Enpirion, Inc. | Laterally diffused metal oxide semiconductor device and method of forming the same |
EP2400552A1 (fr) | 2010-06-24 | 2011-12-28 | Dialog Semiconductor GmbH | Structure de transistor MOS dotée d'un accès facile à tous les noeuds |
EP2738806A3 (fr) * | 2012-11-30 | 2017-01-11 | Enpirion, Inc. | Dispositif semi-conducteur comprenant une couche de redistribution et des piliers métalliques couplés à celui-ci |
US9837324B2 (en) * | 2013-11-12 | 2017-12-05 | Skyworks Solutions, Inc. | Devices and methods related to radio-frequency switches having improved on-resistance performance |
US11901243B2 (en) * | 2013-11-12 | 2024-02-13 | Skyworks Solutions, Inc. | Methods related to radio-frequency switching devices having improved voltage handling capability |
US10020739B2 (en) | 2014-03-27 | 2018-07-10 | Altera Corporation | Integrated current replicator and method of operating the same |
US9673192B1 (en) | 2013-11-27 | 2017-06-06 | Altera Corporation | Semiconductor device including a resistor metallic layer and method of forming the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55108775A (en) * | 1979-02-09 | 1980-08-21 | Fujitsu Ltd | Semiconductor device |
JPS61104674A (ja) * | 1984-10-29 | 1986-05-22 | Fujitsu Ltd | 半導体装置 |
US5283452A (en) * | 1992-02-14 | 1994-02-01 | Hughes Aircraft Company | Distributed cell monolithic mircowave integrated circuit (MMIC) field-effect transistor (FET) amplifier |
JP2637937B2 (ja) * | 1995-01-30 | 1997-08-06 | 関西日本電気株式会社 | 電界効果トランジスタの製造方法 |
JP2001094094A (ja) * | 1999-09-21 | 2001-04-06 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP4041660B2 (ja) * | 2001-05-31 | 2008-01-30 | ユーディナデバイス株式会社 | 半導体装置及びその製造方法 |
JP3976089B2 (ja) * | 2002-08-09 | 2007-09-12 | 株式会社リコー | 半導体集積回路装置及びその製造方法 |
JP2004096118A (ja) * | 2003-09-12 | 2004-03-25 | Hitachi Ltd | 半導体装置およびその製造方法 |
-
2006
- 2006-12-27 FR FR0655981A patent/FR2911005B1/fr not_active Expired - Fee Related
-
2007
- 2007-12-26 US US11/964,438 patent/US7829958B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
FR2911005A1 (fr) | 2008-07-04 |
US7829958B2 (en) | 2010-11-09 |
US20080157226A1 (en) | 2008-07-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20130830 |