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FR2968831B1 - METHODS OF FORMING NITRIDE III MASSIVE MATERIALS ON METAL NITRIDE GROWTH MATRIX LAYERS AND STRUCTURES FORMED THEREFROM - Google Patents

METHODS OF FORMING NITRIDE III MASSIVE MATERIALS ON METAL NITRIDE GROWTH MATRIX LAYERS AND STRUCTURES FORMED THEREFROM

Info

Publication number
FR2968831B1
FR2968831B1 FR1060271A FR1060271A FR2968831B1 FR 2968831 B1 FR2968831 B1 FR 2968831B1 FR 1060271 A FR1060271 A FR 1060271A FR 1060271 A FR1060271 A FR 1060271A FR 2968831 B1 FR2968831 B1 FR 2968831B1
Authority
FR
France
Prior art keywords
template layer
methods
nitride semiconductor
structures formed
formed therefrom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1060271A
Other languages
French (fr)
Other versions
FR2968831A1 (en
Inventor
Chantal Arena
Ronald Thomas Bertram
Ed Lindow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1060271A priority Critical patent/FR2968831B1/en
Priority to TW100131354A priority patent/TWI436409B/en
Priority to KR1020137015095A priority patent/KR20130122640A/en
Priority to PCT/EP2011/070771 priority patent/WO2012069520A1/en
Priority to JP2013539299A priority patent/JP5892447B2/en
Priority to CN201180056320.3A priority patent/CN103221586B/en
Priority to DE112011103869T priority patent/DE112011103869T5/en
Priority to US13/988,987 priority patent/US9023721B2/en
Publication of FR2968831A1 publication Critical patent/FR2968831A1/en
Application granted granted Critical
Publication of FR2968831B1 publication Critical patent/FR2968831B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/22—Sandwich processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Bulk III-nitride semiconductor materials are deposited in an HPVE process using a metal trichloride precursor on a metal nitride template layer of a growth substrate. Deposition of the bulk III-nitride semiconductor material may be performed without ex situ formation of the template layer using a MOCVD process. In some embodiments, a nucleation template layer is formed ex situ using a non-MOCVD process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process. In additional embodiments, a nucleation template layer is formed in situ using an MOCVD process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process. In further embodiments, a nucleation template layer is formed in situ using an HVPE process prior to depositing bulk III-nitride semiconductor material on the template layer using an HVPE process.
FR1060271A 2010-11-23 2010-12-08 METHODS OF FORMING NITRIDE III MASSIVE MATERIALS ON METAL NITRIDE GROWTH MATRIX LAYERS AND STRUCTURES FORMED THEREFROM Expired - Fee Related FR2968831B1 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1060271A FR2968831B1 (en) 2010-12-08 2010-12-08 METHODS OF FORMING NITRIDE III MASSIVE MATERIALS ON METAL NITRIDE GROWTH MATRIX LAYERS AND STRUCTURES FORMED THEREFROM
TW100131354A TWI436409B (en) 2010-11-23 2011-08-31 Methods of forming bulk iii-nitride materials on metal-nitride growth template layers , and structures formed by such methods
PCT/EP2011/070771 WO2012069520A1 (en) 2010-11-23 2011-11-23 Methods of forming bulk iii-nitride materials on metal-nitride growth template layers, and structures formed by such methods
JP2013539299A JP5892447B2 (en) 2010-11-23 2011-11-23 Method for forming bulk III-nitride material on metal nitride growth template layer and structure formed by the method
KR1020137015095A KR20130122640A (en) 2010-11-23 2011-11-23 Methods of forming bulk iii-nitride materials on metal-nitride growth template layers, and structures formed by such methods
CN201180056320.3A CN103221586B (en) 2010-11-23 2011-11-23 The method forming block III-nitride material on metal nitride growth templates layer and the structure formed by described method
DE112011103869T DE112011103869T5 (en) 2010-11-23 2011-11-23 A method of forming III-nitride base materials on metal nitride growth support layers and structures formed by such methods
US13/988,987 US9023721B2 (en) 2010-11-23 2011-11-23 Methods of forming bulk III-nitride materials on metal-nitride growth template layers, and structures formed by such methods

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1060271A FR2968831B1 (en) 2010-12-08 2010-12-08 METHODS OF FORMING NITRIDE III MASSIVE MATERIALS ON METAL NITRIDE GROWTH MATRIX LAYERS AND STRUCTURES FORMED THEREFROM

Publications (2)

Publication Number Publication Date
FR2968831A1 FR2968831A1 (en) 2012-06-15
FR2968831B1 true FR2968831B1 (en) 2012-12-21

Family

ID=43920644

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1060271A Expired - Fee Related FR2968831B1 (en) 2010-11-23 2010-12-08 METHODS OF FORMING NITRIDE III MASSIVE MATERIALS ON METAL NITRIDE GROWTH MATRIX LAYERS AND STRUCTURES FORMED THEREFROM

Country Status (7)

Country Link
JP (1) JP5892447B2 (en)
KR (1) KR20130122640A (en)
CN (1) CN103221586B (en)
DE (1) DE112011103869T5 (en)
FR (1) FR2968831B1 (en)
TW (1) TWI436409B (en)
WO (1) WO2012069520A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101713718B1 (en) 2015-02-23 2017-03-08 현대자동차 주식회사 Coating method of seperator for fuel cell and seperator for fuel cell
CN106012022A (en) * 2016-08-01 2016-10-12 中国电子科技集团公司第四十六研究所 Fe doping method capable of enhancing resistivity uniformity of semi-insulating gallium nitride monocrystals
JP7180984B2 (en) * 2018-03-01 2022-11-30 株式会社ニューフレアテクノロジー Vapor growth method
CN109468680A (en) * 2018-12-19 2019-03-15 东莞市中镓半导体科技有限公司 A kind of gas preheating unit applied to hydride gas-phase epitaxy equipment
TWI832407B (en) * 2022-09-01 2024-02-11 財團法人金屬工業研究發展中心 Plasma auxiliary annealing system and annealing method thereof
KR102546997B1 (en) * 2022-12-02 2023-06-23 이상주 Treatment device for waste gas from semiconductor manufacturing process

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US5610106A (en) 1995-03-10 1997-03-11 Sony Corporation Plasma enhanced chemical vapor deposition of titanium nitride using ammonia
US6221174B1 (en) 1999-02-11 2001-04-24 Applied Materials, Inc. Method of performing titanium/titanium nitride integration
US6179913B1 (en) 1999-04-16 2001-01-30 Cbl Technologies, Inc. Compound gas injection system and methods
JP2001217193A (en) * 2000-02-01 2001-08-10 Namiki Precision Jewel Co Ltd METHOD OF FORMING AIN BUFFER LAYER, AND AlN BUFFER LAYER, AND METHOD OF FORMING GaN SINGLE CRYSTAL FILM AND GaN SINGLE CRYSTAL FILM
AU2002219978A1 (en) 2000-11-30 2002-06-11 Kyma Technologies, Inc. Method and apparatus for producing miiin columns and miiin materials grown thereon
JP3946448B2 (en) * 2001-02-08 2007-07-18 日亜化学工業株式会社 Manufacturing method of nitride semiconductor substrate
JP2004524690A (en) * 2001-02-27 2004-08-12 シービーエル テクノロジーズ インコーポレイテッド Hybrid growth system and method
WO2004061969A1 (en) * 2002-12-16 2004-07-22 The Regents Of The University Of California Growth of planar, non-polar a-plane gallium nitride by hydride vapor phase epitaxy
US7427555B2 (en) * 2002-12-16 2008-09-23 The Regents Of The University Of California Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
JP4361747B2 (en) * 2003-03-04 2009-11-11 東京エレクトロン株式会社 Thin film formation method
JP4765025B2 (en) * 2004-02-05 2011-09-07 農工大ティー・エル・オー株式会社 AlN epitaxial layer growth method and vapor phase growth apparatus
JP2005343736A (en) * 2004-06-02 2005-12-15 Crystal System:Kk Method and apparatus for manufacturing single crystal
JP2006096588A (en) * 2004-09-28 2006-04-13 Sumitomo Electric Ind Ltd Method for manufacturing gallium nitride self-supporting substrate
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JP4860309B2 (en) * 2006-03-17 2012-01-25 日本碍子株式会社 Group III nitride crystal manufacturing apparatus and group III nitride crystal multilayer structure manufacturing method
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Also Published As

Publication number Publication date
WO2012069520A1 (en) 2012-05-31
JP2014502246A (en) 2014-01-30
FR2968831A1 (en) 2012-06-15
KR20130122640A (en) 2013-11-07
TW201250791A (en) 2012-12-16
JP5892447B2 (en) 2016-03-23
TWI436409B (en) 2014-05-01
CN103221586B (en) 2016-08-10
CN103221586A (en) 2013-07-24
DE112011103869T5 (en) 2013-08-22

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