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FR2942660B1 - SENSOR DEVICE BASED ON NANOWLAS - Google Patents

SENSOR DEVICE BASED ON NANOWLAS

Info

Publication number
FR2942660B1
FR2942660B1 FR0951251A FR0951251A FR2942660B1 FR 2942660 B1 FR2942660 B1 FR 2942660B1 FR 0951251 A FR0951251 A FR 0951251A FR 0951251 A FR0951251 A FR 0951251A FR 2942660 B1 FR2942660 B1 FR 2942660B1
Authority
FR
France
Prior art keywords
nanowlas
sensor device
device based
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0951251A
Other languages
French (fr)
Other versions
FR2942660A1 (en
Inventor
Laurent Duraffourg
Philippe Andreucci
Thomas Ernst
Sebastien Hentz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0951251A priority Critical patent/FR2942660B1/en
Priority to EP18187837.2A priority patent/EP3424874B1/en
Priority to EP18187843.0A priority patent/EP3424875B1/en
Priority to EP10154557.2A priority patent/EP2223887B1/en
Priority to US12/713,909 priority patent/US9382108B2/en
Priority to JP2010041878A priority patent/JP2010204098A/en
Publication of FR2942660A1 publication Critical patent/FR2942660A1/en
Application granted granted Critical
Publication of FR2942660B1 publication Critical patent/FR2942660B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/02Sensors
    • B81B2201/0214Biosensors; Chemical sensors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00Basic microelectromechanical structures
    • B81B2203/01Suspended structures, i.e. structures allowing a movement
    • B81B2203/0109Bridges

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
FR0951251A 2009-02-27 2009-02-27 SENSOR DEVICE BASED ON NANOWLAS Expired - Fee Related FR2942660B1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR0951251A FR2942660B1 (en) 2009-02-27 2009-02-27 SENSOR DEVICE BASED ON NANOWLAS
EP18187837.2A EP3424874B1 (en) 2009-02-27 2010-02-24 Sensor device based on nanowires with mobile mass
EP18187843.0A EP3424875B1 (en) 2009-02-27 2010-02-24 Sensor device based on nanowires of increasing length
EP10154557.2A EP2223887B1 (en) 2009-02-27 2010-02-24 Sensor using nanowires
US12/713,909 US9382108B2 (en) 2009-02-27 2010-02-26 Nanowire sensor device
JP2010041878A JP2010204098A (en) 2009-02-27 2010-02-26 Nanowire sensor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0951251A FR2942660B1 (en) 2009-02-27 2009-02-27 SENSOR DEVICE BASED ON NANOWLAS

Publications (2)

Publication Number Publication Date
FR2942660A1 FR2942660A1 (en) 2010-09-03
FR2942660B1 true FR2942660B1 (en) 2011-04-01

Family

ID=41465391

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0951251A Expired - Fee Related FR2942660B1 (en) 2009-02-27 2009-02-27 SENSOR DEVICE BASED ON NANOWLAS

Country Status (4)

Country Link
US (1) US9382108B2 (en)
EP (3) EP2223887B1 (en)
JP (1) JP2010204098A (en)
FR (1) FR2942660B1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2923646A1 (en) * 2007-11-09 2009-05-15 Commissariat Energie Atomique MEMORY CELL SRAM WITH TRANSISTORS WITH VERTICAL MULTI-CHANNEL STRUCTURE
FR2995691B1 (en) * 2012-09-19 2014-10-10 Commissariat Energie Atomique THERMAL FLOW SENSOR, GAS SENSOR COMPRISING AT LEAST ONE SUCH SENSOR AND PIRANI GAUGE COMPRISING AT LEAST ONE SUCH SENSOR
WO2014169960A1 (en) * 2013-04-19 2014-10-23 Koc Universitesi A nanomechanical resonator array and production method thereof
FR3017463B1 (en) * 2014-02-13 2020-11-13 Commissariat Energie Atomique SUSPENDED-STRUCTURE GAS CONCENTRATION SENSOR
WO2017170748A1 (en) * 2016-03-31 2017-10-05 京セラ株式会社 Stress sensor
KR101919344B1 (en) 2016-12-26 2018-11-20 한양대학교 에리카산학협력단 METHOD FOR FABRICATING ZnO HUMIDITY SENSOR DEVICE
FR3086386B1 (en) * 2018-09-21 2020-12-04 Commissariat Energie Atomique MEASURING DEVICE CONTAINING A SUSPENDED SEMICONDUCTOR WIRE
FR3110284B1 (en) * 2020-05-14 2023-01-13 Commissariat Energie Atomique Detection device using piezoresistive transduction

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6803840B2 (en) * 2001-03-30 2004-10-12 California Institute Of Technology Pattern-aligned carbon nanotube growth and tunable resonator apparatus
US7051945B2 (en) * 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
US7302856B2 (en) * 2003-05-07 2007-12-04 California Institute Of Technology Strain sensors based on nanowire piezoresistor wires and arrays
US7473943B2 (en) * 2004-10-15 2009-01-06 Nanosys, Inc. Gate configuration for nanowire electronic devices
FR2884648B1 (en) * 2005-04-13 2007-09-07 Commissariat Energie Atomique STRUCTURE AND METHOD FOR PRODUCING A MICROELECTRONIC DEVICE HAVING ONE OR MORE QUANTUM THREADS FOR FORMING A CHANNEL OR MORE CHANNELS OF TRANSISTORS
AT503995B1 (en) * 2006-08-07 2009-03-15 Arc Seibersdorf Res Gmbh MINIATURE SENSOR ACCELERATION
US7819005B2 (en) * 2007-06-25 2010-10-26 Micron Technology, Inc. Sensor and transducer devices comprising carbon nanotubes, methods of making and using the same

Also Published As

Publication number Publication date
EP3424874B1 (en) 2020-09-30
EP2223887B1 (en) 2018-09-12
EP3424874A1 (en) 2019-01-09
FR2942660A1 (en) 2010-09-03
EP3424875A1 (en) 2019-01-09
JP2010204098A (en) 2010-09-16
US9382108B2 (en) 2016-07-05
EP3424875B1 (en) 2020-04-15
EP2223887A1 (en) 2010-09-01
US20100219489A1 (en) 2010-09-02

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