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FR2836280B1 - Structure de cathode a couche emissive formee sur une couche resistive - Google Patents

Structure de cathode a couche emissive formee sur une couche resistive

Info

Publication number
FR2836280B1
FR2836280B1 FR0202078A FR0202078A FR2836280B1 FR 2836280 B1 FR2836280 B1 FR 2836280B1 FR 0202078 A FR0202078 A FR 0202078A FR 0202078 A FR0202078 A FR 0202078A FR 2836280 B1 FR2836280 B1 FR 2836280B1
Authority
FR
France
Prior art keywords
structure formed
layer
cathode structure
emissive
resistive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0202078A
Other languages
English (en)
Other versions
FR2836280A1 (fr
Inventor
Jean Dijon
Adeline Fournier
Brigitte Montmayeul
Aime Perrin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0202078A priority Critical patent/FR2836280B1/fr
Priority to EP03100342A priority patent/EP1336980A1/fr
Priority to JP2003039716A priority patent/JP2003249163A/ja
Priority to US10/367,885 priority patent/US6917147B2/en
Publication of FR2836280A1 publication Critical patent/FR2836280A1/fr
Application granted granted Critical
Publication of FR2836280B1 publication Critical patent/FR2836280B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
FR0202078A 2002-02-19 2002-02-19 Structure de cathode a couche emissive formee sur une couche resistive Expired - Fee Related FR2836280B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR0202078A FR2836280B1 (fr) 2002-02-19 2002-02-19 Structure de cathode a couche emissive formee sur une couche resistive
EP03100342A EP1336980A1 (fr) 2002-02-19 2003-02-14 Structure de cathode à couche émissive formée sur une couche résistive
JP2003039716A JP2003249163A (ja) 2002-02-19 2003-02-18 抵抗層上に形成された放出層を有する陰極構造
US10/367,885 US6917147B2 (en) 2002-02-19 2003-02-19 Cathode structure with emissive layer formed on a resistive layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0202078A FR2836280B1 (fr) 2002-02-19 2002-02-19 Structure de cathode a couche emissive formee sur une couche resistive

Publications (2)

Publication Number Publication Date
FR2836280A1 FR2836280A1 (fr) 2003-08-22
FR2836280B1 true FR2836280B1 (fr) 2004-04-02

Family

ID=27620265

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0202078A Expired - Fee Related FR2836280B1 (fr) 2002-02-19 2002-02-19 Structure de cathode a couche emissive formee sur une couche resistive

Country Status (4)

Country Link
US (1) US6917147B2 (fr)
EP (1) EP1336980A1 (fr)
JP (1) JP2003249163A (fr)
FR (1) FR2836280B1 (fr)

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KR20050051532A (ko) * 2003-11-27 2005-06-01 삼성에스디아이 주식회사 전계방출 표시장치
US20110039690A1 (en) * 2004-02-02 2011-02-17 Nanosys, Inc. Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production
US7553371B2 (en) 2004-02-02 2009-06-30 Nanosys, Inc. Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production
US8025960B2 (en) * 2004-02-02 2011-09-27 Nanosys, Inc. Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production
KR20050096534A (ko) * 2004-03-31 2005-10-06 삼성에스디아이 주식회사 전자 방출 표시 장치의 캐소드 기판 및 그 제조 방법
FR2873852B1 (fr) * 2004-07-28 2011-06-24 Commissariat Energie Atomique Structure de cathode a haute resolution
US7429820B2 (en) * 2004-12-07 2008-09-30 Motorola, Inc. Field emission display with electron trajectory field shaping
CN100468155C (zh) * 2004-12-29 2009-03-11 鸿富锦精密工业（深圳）有限公司 背光模组和液晶显示器
KR20060104659A (ko) 2005-03-31 2006-10-09 삼성에스디아이 주식회사 전자 방출 소자
TW200638458A (en) * 2005-04-20 2006-11-01 Ind Tech Res Inst Triode field emission display
EP2586744B1 (fr) * 2005-04-25 2016-01-13 Smoltek AB Nanostructure et formation du précurseur sur substrat conducteur
FR2886284B1 (fr) * 2005-05-30 2007-06-29 Commissariat Energie Atomique Procede de realisation de nanostructures
US7911123B2 (en) * 2005-07-04 2011-03-22 Samsung Sdi Co., Ltd. Electron emission device and electron emission display using the electron emission device
US7777291B2 (en) 2005-08-26 2010-08-17 Smoltek Ab Integrated circuits having interconnects and heat dissipators based on nanostructures
TWI272870B (en) * 2005-11-18 2007-02-01 Tatung Co Field emission display device
US7545088B2 (en) * 2006-01-31 2009-06-09 Motorola, Inc. Field emission device
FR2897718B1 (fr) 2006-02-22 2008-10-17 Commissariat Energie Atomique Structure de cathode a nanotubes pour ecran emissif
JP5098048B2 (ja) * 2006-04-05 2012-12-12 インダストリー アカデミック コーオペレイション ファウンデーション オブ キョンヒー ユニヴァーシティー 電子放出源の選択的位置制御を用いた電界放出ディスプレイの製造方法および電界放出ディスプレイ
JP2007329014A (ja) * 2006-06-08 2007-12-20 Ulvac Japan Ltd Ｆｅｄ用カソード基板
KR100803194B1 (ko) * 2006-06-30 2008-02-14 삼성에스디아이 주식회사 탄소나노튜브 구조체 형성방법
KR100814856B1 (ko) 2006-10-20 2008-03-20 삼성에스디아이 주식회사 발광 장치 및 표시 장치
TW200826016A (en) * 2006-12-12 2008-06-16 Tatung Co Ltd Display device and back light thereof and method of driving the back light
JP5535915B2 (ja) 2007-09-12 2014-07-02 スモルテック アーベー ナノ構造体による隣接層の接続および接合
CN102007571B (zh) 2008-02-25 2016-01-20 斯莫特克有限公司 纳米结构制造过程中的导电助层的沉积和选择性移除
US7800471B2 (en) * 2008-04-04 2010-09-21 Cedar Ridge Research, Llc Field emission system and method
DK2433475T3 (da) 2009-05-19 2021-05-10 Oned Mat Inc Nanostrukturerede materialer til batterianvendelser
US8623288B1 (en) 2009-06-29 2014-01-07 Nanosys, Inc. Apparatus and methods for high density nanowire growth
US11430974B2 (en) 2019-05-17 2022-08-30 Ppg Industries Ohio, Inc. System for roll-to-roll electrocoating of battery electrode coatings onto a foil substrate

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0503638B1 (fr) * 1991-03-13 1996-06-19 Sony Corporation Réseau de cathodes à émission de champ
FR2702869B1 (fr) * 1993-03-17 1995-04-21 Commissariat Energie Atomique Dispositif d'affichage à micropointes et procédé de fabrication de ce dispositif.
US5717285A (en) * 1993-03-17 1998-02-10 Commissariat A L 'energie Atomique Microtip display device having a current limiting layer and a charge avoiding layer
US5569975A (en) * 1994-11-18 1996-10-29 Texas Instruments Incorporated Cluster arrangement of field emission microtips
JP2809129B2 (ja) * 1995-04-20 1998-10-08 日本電気株式会社 電界放射冷陰極とこれを用いた表示装置
US5759078A (en) * 1995-05-30 1998-06-02 Texas Instruments Incorporated Field emission device with close-packed microtip array
EP0834897B1 (fr) * 1996-10-04 2002-05-02 STMicroelectronics S.r.l. Procédé de fabrication d'un dispositif de visualisation plat à effet de champ et dispositif de visualisation ainsi obtenu
FR2780808B1 (fr) * 1998-07-03 2001-08-10 Thomson Csf Dispositif a emission de champ et procedes de fabrication
US6323587B1 (en) 1998-08-06 2001-11-27 Micron Technology, Inc. Titanium silicide nitride emitters and method
JP3595718B2 (ja) * 1999-03-15 2004-12-02 株式会社東芝 表示素子およびその製造方法
US6476406B1 (en) * 1999-06-22 2002-11-05 Agfa-Gevaert Devices equipped with tribostimulable storage phosphors
FR2798508B1 (fr) * 1999-09-09 2001-10-05 Commissariat Energie Atomique Dispositif permettant de produire un champ electrique module au niveau d'une electrode et son application aux ecrans plats a emission de champ

Also Published As

Publication number Publication date
US20030184357A1 (en) 2003-10-02
FR2836280A1 (fr) 2003-08-22
EP1336980A1 (fr) 2003-08-20
JP2003249163A (ja) 2003-09-05
US6917147B2 (en) 2005-07-12

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20131031