FR2883416B1 - Dispositif a semiconducteur. - Google Patents

Dispositif a semiconducteur.

Info

Publication number: FR2883416B1
Authority: FR; France
Prior art keywords: semiconductor device; semiconductor
Prior art date: 2005-03-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

FR0511290A

Other languages

English (en)

Other versions

FR2883416A1 (fr

Inventor

Makoto Kondou

Kiyoshi Arai

Jose Saiz

Pierre Solomalala

Emmanuel Dutarde

Benoit Boursat

Philippe Lasserre

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Alstom Transport Technologies SAS

Mitsubishi Electric Corp

Original Assignee

Mitsubishi Electric Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2005-03-15

Filing date

2005-11-07

Publication date

2012-07-20

2005-11-07 Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp

2006-09-22 Publication of FR2883416A1 publication Critical patent/FR2883416A1/fr

2012-07-20 Application granted granted Critical

2012-07-20 Publication of FR2883416B1 publication Critical patent/FR2883416B1/fr

Status Active legal-status Critical Current

2025-11-07 Anticipated expiration legal-status Critical

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
- H01L25/162—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Power Engineering (AREA)
Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Inverter Devices (AREA)

FR0511290A 2005-03-15 2005-11-07 Dispositif a semiconducteur. Active FR2883416B1 (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2005072517A JP4478049B2 (ja)	2005-03-15	2005-03-15	半導体装置

Publications (2)

Publication Number	Publication Date
FR2883416A1 FR2883416A1 (fr)	2006-09-22
FR2883416B1 true FR2883416B1 (fr)	2012-07-20

Family

ID=36942469

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR0511290A Active FR2883416B1 (fr)	2005-03-15	2005-11-07	Dispositif a semiconducteur.

Country Status (3)

Country	Link
US (1)	US7479693B2 (fr)
JP (1)	JP4478049B2 (fr)
FR (1)	FR2883416B1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7880283B2 (en) *	2006-04-25	2011-02-01	International Rectifier Corporation	High reliability power module
JP2009044033A (ja) *	2007-08-10	2009-02-26	Seiko Epson Corp	半導体レーザ、光源装置、照明装置、プロジェクタおよびモニタ装置
JP5245485B2 (ja)	2008-03-25	2013-07-24	富士電機株式会社	半導体装置の製造方法
US8450845B2 (en) *	2008-04-09	2013-05-28	Fuji Electric Co., Ltd.	Semiconductor device
JP5777203B2 (ja) *	2011-03-22	2015-09-09	ニチコン株式会社	パワーモジュール
CN103620762B (zh) *	2011-10-21	2016-08-17	松下电器产业株式会社	半导体装置
JP5888010B2 (ja) *	2012-03-08	2016-03-16	日産自動車株式会社	インバータモジュール
JP6368646B2 (ja)	2012-09-20	2018-08-01	ローム株式会社	パワーモジュール半導体装置およびインバータ装置、およびパワーモジュール半導体装置の製造方法、および金型
DE102014109816B4 (de) *	2014-07-14	2016-11-03	Infineon Technologies Ag	Leistungshalbleitermodul und System mit mindestens zwei Leistungshalbleitermodulen
JP6743542B2 (ja) *	2016-07-15	2020-08-19	富士電機株式会社	半導体装置及び半導体装置用ケース

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5166773A (en) *	1989-07-03	1992-11-24	General Electric Company	Hermetic package and packaged semiconductor chip having closely spaced leads extending through the package lid
JPH06181286A (ja)	1992-12-14	1994-06-28	Toshiba Corp	半導体装置
JP3180863B2 (ja) *	1993-07-27	2001-06-25	富士電機株式会社	加圧接触形半導体装置およびその組立方法
JP3879150B2 (ja)	1996-08-12	2007-02-07	株式会社デンソー	半導体装置
JPH1064956A (ja) *	1996-08-20	1998-03-06	Fujitsu Ltd	フェースダウンボンディング半導体装置
US6286206B1 (en) *	1997-02-25	2001-09-11	Chou H. Li	Heat-resistant electronic systems and circuit boards
US6060772A (en) *	1997-06-30	2000-05-09	Kabushiki Kaisha Toshiba	Power semiconductor module with a plurality of semiconductor chips
US5854507A (en) *	1998-07-21	1998-12-29	Hewlett-Packard Company	Multiple chip assembly
JP3525753B2 (ja)	1998-08-26	2004-05-10	株式会社豊田中央研究所	パワーモジュール
JP2000124398A (ja)	1998-10-16	2000-04-28	Mitsubishi Electric Corp	パワー半導体モジュール
FR2786655B1 (fr)	1998-11-27	2001-11-23	Alstom Technology	Dispositif electronique de puissance
FR2786656B1 (fr)	1998-11-27	2001-01-26	Alstom Technology	Composant electronique de puissance comportant des moyens de refroidissement
JP3903681B2 (ja)	1999-03-11	2007-04-11	三菱マテリアル株式会社	半導体装置
FR2811475B1 (fr)	2000-07-07	2002-08-23	Alstom	Procede de fabrication d'un composant electronique de puissance, et composant electronique de puissance ainsi obtenu
JP2002026251A (ja)	2000-07-11	2002-01-25	Toshiba Corp	半導体装置
FR2835651B1 (fr) *	2002-02-06	2005-04-15	St Microelectronics Sa	Dispositif de montage d'un boitier semi-conducteur sur une plaque-support par l'intermediaire d'une embase
SG121707A1 (en) *	2002-03-04	2006-05-26	Micron Technology Inc	Method and apparatus for flip-chip packaging providing testing capability
US7247517B2 (en) *	2003-09-30	2007-07-24	Intel Corporation	Method and apparatus for a dual substrate package
JP4491244B2 (ja)	2004-01-07	2010-06-30	三菱電機株式会社	電力半導体装置

2005
- 2005-03-15 JP JP2005072517A patent/JP4478049B2/ja active Active
- 2005-09-08 US US11/220,788 patent/US7479693B2/en active Active
- 2005-11-07 FR FR0511290A patent/FR2883416B1/fr active Active

Also Published As

Publication number	Publication date
US20060220213A1 (en)	2006-10-05
FR2883416A1 (fr)	2006-09-22
US7479693B2 (en)	2009-01-20
JP4478049B2 (ja)	2010-06-09
JP2006261168A (ja)	2006-09-28

Publication	Publication Date	Title
FR2916900B1 (fr)	2011-11-25	Dispositif a semi-conducteur
DE602005019354D1 (de)	2010-04-01	Brecherbefestigungsvorrichtung.
DE102005024684A8 (de)	2013-11-21	Halbleitervorrichtung
DE602006012106D1 (de)	2010-03-25	Halbleiteranordnung
FR2895290B1 (fr)	2014-08-22	Dispositif de percage
FR2886582B3 (fr)	2007-05-11	Dispositif gonflable.
ITTO20040595A1 (it)	2004-12-09	Dispositivo a semiconduttore
FR2906858B1 (fr)	2008-12-05	Dispositif de poulie debrayable.
FR2889788B3 (fr)	2007-07-20	Dispositif photovoltaique.
FR2883416B1 (fr)	2012-07-20	Dispositif a semiconducteur.
DE602006003509D1 (de)	2008-12-18	Halbleiterspeicheranordnung
FR2904523B1 (fr)	2009-01-23	Dispositif pare-douche.
BE1015485B5 (nl)	2006-02-07	Boorinrichting.
FI20055057A (fi)	2005-11-12	Puolijohdelaite
NO20054036L (no)	2007-02-05	Mateanordning.
FR2891474B1 (fr)	2007-12-14	Dispositif de brumisation
FR2888216B1 (fr)	2010-08-20	Dispositif anti remplissage
FR2895229B1 (fr)	2008-12-26	Dispositif intra-uterin recuperable
FR2890574B1 (fr)	2008-05-23	Dispositif separateur gaz-liquide.
FR2867954B3 (fr)	2006-02-24	Dispositif de transport
FR2893391B1 (fr)	2008-06-06	Dispositif combine four-refrigerateur
DE602005024528D1 (de)	2010-12-16	Halbleitervorrichtung
FR2873397B1 (fr)	2006-10-06	Dispositif enfonce-pieux securise
ITRM20050575A1 (it)	2007-05-19	Dispositivo di interconnessione.
ES1060882Y (es)	2006-03-16	Dispositivo elevador.

Legal Events

Date	Code	Title	Description
2007-11-09	TQ	Partial transmission of property
2015-10-08	PLFP	Fee payment	Year of fee payment: 11
2016-10-14	PLFP	Fee payment	Year of fee payment: 12
2017-09-29	TQ	Partial transmission of property	Owner name: ALSTOM TRANSPORT TECHNOLOGIES, FR Effective date: 20170824 Owner name: MITSUBISHI DENKI KABUSHIKI KAISHA, JP Effective date: 20170824
2017-10-12	PLFP	Fee payment	Year of fee payment: 13
2018-10-11	PLFP	Fee payment	Year of fee payment: 14
2019-10-15	PLFP	Fee payment	Year of fee payment: 15
2020-10-13	PLFP	Fee payment	Year of fee payment: 16
2021-10-18	PLFP	Fee payment	Year of fee payment: 17
2022-10-10	PLFP	Fee payment	Year of fee payment: 18
2023-09-29	PLFP	Fee payment	Year of fee payment: 19
2024-10-01	PLFP	Fee payment	Year of fee payment: 20