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FR2880900B1 - SENSIVELY PLANAR EXTENSION CARRIER FOR THE MANUFACTURE OF A POLYCRYSTALLINE SILICON STRIP - Google Patents

SENSIVELY PLANAR EXTENSION CARRIER FOR THE MANUFACTURE OF A POLYCRYSTALLINE SILICON STRIP

Info

Publication number
FR2880900B1
FR2880900B1 FR0550159A FR0550159A FR2880900B1 FR 2880900 B1 FR2880900 B1 FR 2880900B1 FR 0550159 A FR0550159 A FR 0550159A FR 0550159 A FR0550159 A FR 0550159A FR 2880900 B1 FR2880900 B1 FR 2880900B1
Authority
FR
France
Prior art keywords
sensively
manufacture
polycrystalline silicon
extension carrier
silicon strip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0550159A
Other languages
French (fr)
Other versions
FR2880900A1 (en
Inventor
Christian Belouet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SOLARFORCE SOC PAR ACTIONS SIM
Original Assignee
SOLARFORCE SOC PAR ACTIONS SIM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SOLARFORCE SOC PAR ACTIONS SIM filed Critical SOLARFORCE SOC PAR ACTIONS SIM
Priority to FR0550159A priority Critical patent/FR2880900B1/en
Priority to EP05825984A priority patent/EP1874983A1/en
Priority to PCT/FR2005/051142 priority patent/WO2006077298A1/en
Publication of FR2880900A1 publication Critical patent/FR2880900A1/en
Application granted granted Critical
Publication of FR2880900B1 publication Critical patent/FR2880900B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/10—Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR0550159A 2005-01-19 2005-01-19 SENSIVELY PLANAR EXTENSION CARRIER FOR THE MANUFACTURE OF A POLYCRYSTALLINE SILICON STRIP Expired - Fee Related FR2880900B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR0550159A FR2880900B1 (en) 2005-01-19 2005-01-19 SENSIVELY PLANAR EXTENSION CARRIER FOR THE MANUFACTURE OF A POLYCRYSTALLINE SILICON STRIP
EP05825984A EP1874983A1 (en) 2005-01-19 2005-12-22 Support for manufacturing a strip based on polycrystalline sillicon
PCT/FR2005/051142 WO2006077298A1 (en) 2005-01-19 2005-12-22 Support for manufacturing a strip based on polycrystalline silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0550159A FR2880900B1 (en) 2005-01-19 2005-01-19 SENSIVELY PLANAR EXTENSION CARRIER FOR THE MANUFACTURE OF A POLYCRYSTALLINE SILICON STRIP

Publications (2)

Publication Number Publication Date
FR2880900A1 FR2880900A1 (en) 2006-07-21
FR2880900B1 true FR2880900B1 (en) 2007-04-13

Family

ID=34953725

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0550159A Expired - Fee Related FR2880900B1 (en) 2005-01-19 2005-01-19 SENSIVELY PLANAR EXTENSION CARRIER FOR THE MANUFACTURE OF A POLYCRYSTALLINE SILICON STRIP

Country Status (3)

Country Link
EP (1) EP1874983A1 (en)
FR (1) FR2880900B1 (en)
WO (1) WO2006077298A1 (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4383130A (en) * 1981-05-04 1983-05-10 Alpha Solarco Inc. Solar energy cell and method of manufacture
FR2516708A1 (en) * 1981-11-13 1983-05-20 Comp Generale Electricite PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON FOR SOLAR PHOTOPILES
US5273911A (en) * 1991-03-07 1993-12-28 Mitsubishi Denki Kabushiki Kaisha Method of producing a thin-film solar cell

Also Published As

Publication number Publication date
EP1874983A1 (en) 2008-01-09
FR2880900A1 (en) 2006-07-21
WO2006077298A1 (en) 2006-07-27

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20150930