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FR2616808B1 - Dispositif pour le depot par chauffage sur un substrat d'un compose introduit par plasma - Google Patents

Dispositif pour le depot par chauffage sur un substrat d'un compose introduit par plasma

Info

Publication number
FR2616808B1
FR2616808B1 FR8708357A FR8708357A FR2616808B1 FR 2616808 B1 FR2616808 B1 FR 2616808B1 FR 8708357 A FR8708357 A FR 8708357A FR 8708357 A FR8708357 A FR 8708357A FR 2616808 B1 FR2616808 B1 FR 2616808B1
Authority
FR
France
Prior art keywords
deposition
plasma
heating
substrate
compound introduced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8708357A
Other languages
English (en)
Other versions
FR2616808A1 (fr
Inventor
Jean-Louis Helary
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lemer and Cie SA
Original Assignee
Lemer and Cie SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lemer and Cie SA filed Critical Lemer and Cie SA
Priority to FR8708357A priority Critical patent/FR2616808B1/fr
Publication of FR2616808A1 publication Critical patent/FR2616808A1/fr
Application granted granted Critical
Publication of FR2616808B1 publication Critical patent/FR2616808B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001Maintaining constant desired temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332Coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
FR8708357A 1987-06-16 1987-06-16 Dispositif pour le depot par chauffage sur un substrat d'un compose introduit par plasma Expired FR2616808B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8708357A FR2616808B1 (fr) 1987-06-16 1987-06-16 Dispositif pour le depot par chauffage sur un substrat d'un compose introduit par plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8708357A FR2616808B1 (fr) 1987-06-16 1987-06-16 Dispositif pour le depot par chauffage sur un substrat d'un compose introduit par plasma

Publications (2)

Publication Number Publication Date
FR2616808A1 FR2616808A1 (fr) 1988-12-23
FR2616808B1 true FR2616808B1 (fr) 1989-09-01

Family

ID=9352081

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8708357A Expired FR2616808B1 (fr) 1987-06-16 1987-06-16 Dispositif pour le depot par chauffage sur un substrat d'un compose introduit par plasma

Country Status (1)

Country Link
FR (1) FR2616808B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5089386A (en) * 1987-09-11 1992-02-18 Gene-Trak Systems Test for listeria
WO1996020293A1 (fr) * 1994-12-28 1996-07-04 Aixtron Gmbh Dispositif pour deposer chimiquement des couches
CN109136885B (zh) * 2017-06-19 2020-11-10 北京北方华创微电子装备有限公司 线圈调节机构、感应加热装置和气相沉积设备
CN112048713A (zh) * 2019-06-05 2020-12-08 中微半导体设备(上海)股份有限公司 加热装置、包括该加热装置的cvd设备

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5677375A (en) * 1979-11-27 1981-06-25 Matsushita Electronics Corp Plasma vapor deposition apparatus
US4632058A (en) * 1984-02-27 1986-12-30 Gemini Research, Inc. Apparatus for uniform chemical vapor deposition
JP2686928B2 (ja) * 1985-08-26 1997-12-08 アンリツ株式会社 シリコン・ゲルマニウム混晶薄膜導電体

Also Published As

Publication number Publication date
FR2616808A1 (fr) 1988-12-23

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Legal Events

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CD Change of name or company name
ST Notification of lapse