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FR2694134B1 - Procede de fabrication d'une diode photovoltauique et diode a structure plane. - Google Patents

Procede de fabrication d'une diode photovoltauique et diode a structure plane.

Info

Publication number
FR2694134B1
FR2694134B1 FR9309162A FR9309162A FR2694134B1 FR 2694134 B1 FR2694134 B1 FR 2694134B1 FR 9309162 A FR9309162 A FR 9309162A FR 9309162 A FR9309162 A FR 9309162A FR 2694134 B1 FR2694134 B1 FR 2694134B1
Authority
FR
France
Prior art keywords
diode
photovoltauic
manufacturing
flat structure
flat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9309162A
Other languages
English (en)
Other versions
FR2694134A1 (fr
Inventor
Devin T Walsh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Santa Barbara Research Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Santa Barbara Research Center filed Critical Santa Barbara Research Center
Publication of FR2694134A1 publication Critical patent/FR2694134A1/fr
Application granted granted Critical
Publication of FR2694134B1 publication Critical patent/FR2694134B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
FR9309162A 1992-07-24 1993-07-26 Procede de fabrication d'une diode photovoltauique et diode a structure plane. Expired - Fee Related FR2694134B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/918,957 US5279974A (en) 1992-07-24 1992-07-24 Planar PV HgCdTe DLHJ fabricated by selective cap layer growth

Publications (2)

Publication Number Publication Date
FR2694134A1 FR2694134A1 (fr) 1994-01-28
FR2694134B1 true FR2694134B1 (fr) 1995-06-16

Family

ID=25441228

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9309162A Expired - Fee Related FR2694134B1 (fr) 1992-07-24 1993-07-26 Procede de fabrication d'une diode photovoltauique et diode a structure plane.

Country Status (2)

Country Link
US (1) US5279974A (fr)
FR (1) FR2694134B1 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0635892B1 (fr) * 1992-07-21 2002-06-26 Raytheon Company Photodétecteur en HgCdTe stable au recuit et procédé pour sa fabrication
US6030853A (en) * 1993-08-13 2000-02-29 Drs Fpa, L.P. Method of producing intrinsic p-type HgCdTe using CdTe capping layer
US5804463A (en) * 1995-06-05 1998-09-08 Raytheon Ti Systems, Inc. Noble metal diffusion doping of mercury cadmium telluride for use in infrared detectors
US5846850A (en) * 1995-09-05 1998-12-08 Raytheon Ti Systems, Inc. Double sided interdiffusion process and structure for a double layer heterojunction focal plane array
US5818051A (en) * 1996-04-04 1998-10-06 Raytheon Ti Systems, Inc. Multiple color infrared detector
US6043106A (en) * 1997-05-28 2000-03-28 Mescher; Mark J. Method for surface passivation and protection of cadmium zinc telluride crystals
US5933706A (en) * 1997-05-28 1999-08-03 James; Ralph Method for surface treatment of a cadmium zinc telluride crystal
US6406982B2 (en) * 2000-06-05 2002-06-18 Denso Corporation Method of improving epitaxially-filled trench by smoothing trench prior to filling
GB2387026A (en) * 2002-03-28 2003-10-01 Zarlink Semiconductor Ltd Method of coating contact holes in MEMS and micro-machining applications
US7264982B2 (en) * 2004-11-01 2007-09-04 International Business Machines Corporation Trench photodetector
US7459730B1 (en) 2005-09-20 2008-12-02 Drs Sensors & Targeting Systems, Inc. Separate absorption and detection diode for VLWIR
US8669588B2 (en) * 2009-07-06 2014-03-11 Raytheon Company Epitaxially-grown position sensitive detector
US8441087B2 (en) 2011-07-22 2013-05-14 Raytheon Company Direct readout focal plane array
US10115764B2 (en) 2011-08-15 2018-10-30 Raytheon Company Multi-band position sensitive imaging arrays
CN104112784A (zh) * 2014-07-10 2014-10-22 南通康比电子有限公司 新型光伏二极管及其生产工艺
RU2566650C1 (ru) * 2014-08-05 2015-10-27 Акционерное общество "НПО "Орион"(АО "НПО "Орион") Способ изготовления фотодиода

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1229093B (de) * 1963-01-23 1966-11-24 Basf Ag Verfahren zur Herstellung von Hexahydropyrimidinderivaten
US3378915A (en) * 1966-03-31 1968-04-23 Northern Electric Co Method of making a planar diffused semiconductor voltage reference diode
FR2336804A1 (fr) * 1975-12-23 1977-07-22 Telecommunications Sa Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne
US4105478A (en) * 1977-01-06 1978-08-08 Honeywell, Inc. Doping hgcdte with li
US4206003A (en) * 1977-07-05 1980-06-03 Honeywell Inc. Method of forming a mercury cadmium telluride photodiode
US4301463A (en) * 1980-03-07 1981-11-17 Bell Telephone Laboratories, Incorporated Demultiplexing photodetector
JPS6074538A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd 半導体素子の製造方法
US4608586A (en) * 1984-05-11 1986-08-26 At&T Bell Laboratories Back-illuminated photodiode with a wide bandgap cap layer
JPH0748560B2 (ja) * 1986-11-18 1995-05-24 株式会社東芝 半導体受光装置の製造方法
US4783594A (en) * 1987-11-20 1988-11-08 Santa Barbara Research Center Reticular detector array
US4910164A (en) * 1988-07-27 1990-03-20 Texas Instruments Incorporated Method of making planarized heterostructures using selective epitaxial growth
JPH02246123A (ja) * 1989-03-17 1990-10-01 Fujitsu Ltd 半導体装置の製造方法
GB2244373B (en) * 1990-05-19 1994-07-20 Stc Plc Semiconductor device manufacture

Also Published As

Publication number Publication date
US5279974A (en) 1994-01-18
FR2694134A1 (fr) 1994-01-28

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Legal Events

Date Code Title Description
CA Change of address
CD Change of name or company name
TP Transmission of property
ST Notification of lapse

Effective date: 20070330