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FR2539522B1 - Element photoconducteur - Google Patents

Element photoconducteur

Info

Publication number
FR2539522B1
FR2539522B1 FR8400579A FR8400579A FR2539522B1 FR 2539522 B1 FR2539522 B1 FR 2539522B1 FR 8400579 A FR8400579 A FR 8400579A FR 8400579 A FR8400579 A FR 8400579A FR 2539522 B1 FR2539522 B1 FR 2539522B1
Authority
FR
France
Prior art keywords
photoconductive element
photoconductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8400579A
Other languages
English (en)
Other versions
FR2539522A1 (fr
Inventor
Keishi Saitoh
Kozo Arao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58005053A external-priority patent/JPS59129858A/ja
Priority claimed from JP58005054A external-priority patent/JPS59129859A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of FR2539522A1 publication Critical patent/FR2539522A1/fr
Application granted granted Critical
Publication of FR2539522B1 publication Critical patent/FR2539522B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)
FR8400579A 1983-01-14 1984-01-16 Element photoconducteur Expired FR2539522B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58005053A JPS59129858A (ja) 1983-01-14 1983-01-14 電子写真用光導電部材
JP58005054A JPS59129859A (ja) 1983-01-14 1983-01-14 光導電部材

Publications (2)

Publication Number Publication Date
FR2539522A1 FR2539522A1 (fr) 1984-07-20
FR2539522B1 true FR2539522B1 (fr) 1986-06-13

Family

ID=26338935

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8400579A Expired FR2539522B1 (fr) 1983-01-14 1984-01-16 Element photoconducteur

Country Status (3)

Country Link
US (1) US4569894A (fr)
DE (1) DE3401083A1 (fr)
FR (1) FR2539522B1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4532198A (en) * 1983-05-09 1985-07-30 Canon Kabushiki Kaisha Photoconductive member
JPS6191665A (ja) * 1984-10-11 1986-05-09 Kyocera Corp 電子写真感光体
US7503975B2 (en) * 2000-06-27 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method therefor
US7238557B2 (en) * 2001-11-14 2007-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US20030111013A1 (en) * 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
JPS5727263A (en) * 1980-07-28 1982-02-13 Hitachi Ltd Electrophotographic photosensitive film
US4394426A (en) * 1980-09-25 1983-07-19 Canon Kabushiki Kaisha Photoconductive member with α-Si(N) barrier layer
US4357179A (en) * 1980-12-23 1982-11-02 Bell Telephone Laboratories, Incorporated Method for producing devices comprising high density amorphous silicon or germanium layers by low pressure CVD technique
US4490453A (en) * 1981-01-16 1984-12-25 Canon Kabushiki Kaisha Photoconductive member of a-silicon with nitrogen
US4469715A (en) * 1981-02-13 1984-09-04 Energy Conversion Devices, Inc. P-type semiconductor material having a wide band gap
US4491626A (en) * 1982-03-31 1985-01-01 Minolta Camera Kabushiki Kaisha Photosensitive member
JPS58192044A (ja) * 1982-05-06 1983-11-09 Konishiroku Photo Ind Co Ltd 感光体

Also Published As

Publication number Publication date
DE3401083A1 (de) 1984-07-19
US4569894A (en) 1986-02-11
FR2539522A1 (fr) 1984-07-20
DE3401083C2 (fr) 1988-09-22

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