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FR2593326B1 - Procede de fabrication d'un dispositif a cellule solaire - Google Patents

Procede de fabrication d'un dispositif a cellule solaire

Info

Publication number
FR2593326B1
FR2593326B1 FR878700045A FR8700045A FR2593326B1 FR 2593326 B1 FR2593326 B1 FR 2593326B1 FR 878700045 A FR878700045 A FR 878700045A FR 8700045 A FR8700045 A FR 8700045A FR 2593326 B1 FR2593326 B1 FR 2593326B1
Authority
FR
France
Prior art keywords
manufacturing
solar cell
cell device
solar
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR878700045A
Other languages
English (en)
Other versions
FR2593326A1 (fr
Inventor
Shigeru Hokuyou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2593326A1 publication Critical patent/FR2593326A1/fr
Application granted granted Critical
Publication of FR2593326B1 publication Critical patent/FR2593326B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/915—Separating from substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
FR878700045A 1986-01-23 1987-01-06 Procede de fabrication d'un dispositif a cellule solaire Expired - Fee Related FR2593326B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61012874A JPS62171167A (ja) 1986-01-23 1986-01-23 太陽電池の製造方法

Publications (2)

Publication Number Publication Date
FR2593326A1 FR2593326A1 (fr) 1987-07-24
FR2593326B1 true FR2593326B1 (fr) 1990-06-08

Family

ID=11817568

Family Applications (1)

Application Number Title Priority Date Filing Date
FR878700045A Expired - Fee Related FR2593326B1 (fr) 1986-01-23 1987-01-06 Procede de fabrication d'un dispositif a cellule solaire

Country Status (3)

Country Link
US (1) US4774194A (fr)
JP (1) JPS62171167A (fr)
FR (1) FR2593326B1 (fr)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6415913A (en) * 1987-07-09 1989-01-19 Mitsubishi Monsanto Chem Epitaxial growth method of substrate for high-brightness led
US5300793A (en) * 1987-12-11 1994-04-05 Hitachi, Ltd. Hetero crystalline structure and semiconductor device using it
JPH0770755B2 (ja) * 1988-01-21 1995-07-31 三菱化学株式会社 高輝度ｌｅｄ用エピタキシャル基板及びその製造方法
US5032543A (en) * 1988-06-17 1991-07-16 Massachusetts Institute Of Technology Coplanar packaging techniques for multichip circuits
JPH042173A (ja) * 1990-04-19 1992-01-07 Sanyo Electric Co Ltd 光起電力装置の製造方法
US5258236A (en) * 1991-05-03 1993-11-02 Ibm Corporation Multi-layer thin film structure and parallel processing method for fabricating same
US5827751A (en) * 1991-12-06 1998-10-27 Picogiga Societe Anonyme Method of making semiconductor components, in particular on GaAs of InP, with the substrate being recovered chemically
FR2684801B1 (fr) * 1991-12-06 1997-01-24 Picogiga Sa Procede de realisation de composants semiconducteurs, notamment sur gaas ou inp, avec recuperation du substrat par voie chimique.
FR2690278A1 (fr) * 1992-04-15 1993-10-22 Picogiga Sa Composant photovoltaïque multispectral à empilement de cellules, et procédé de réalisation.
JPH0690014A (ja) * 1992-07-22 1994-03-29 Mitsubishi Electric Corp 薄型太陽電池及びその製造方法，エッチング方法及び自動エッチング装置，並びに半導体装置の製造方法
US5330918A (en) * 1992-08-31 1994-07-19 The United States Of America As Represented By The Secretary Of The Navy Method of forming a high voltage silicon-on-sapphire photocell array
US6756289B1 (en) 1996-12-27 2004-06-29 Canon Kabushiki Kaisha Method of producing semiconductor member and method of producing solar cell
EP0851513B1 (fr) * 1996-12-27 2007-11-21 Canon Kabushiki Kaisha Méthode de fabrication d'un composant semiconducteur et méthode de fabrication d'une cellule solaire
US6155909A (en) * 1997-05-12 2000-12-05 Silicon Genesis Corporation Controlled cleavage system using pressurized fluid
WO1999001594A1 (fr) * 1997-07-03 1999-01-14 Cbl Technologies Compensation du desequilibre thermique pour obtenir des substrats autonomes par depot epitaxique
US6071795A (en) * 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
JP4738636B2 (ja) 2001-05-29 2011-08-03 株式会社テクノ菱和 防爆型無発塵イオナイザー
US7488890B2 (en) * 2003-04-21 2009-02-10 Sharp Kabushiki Kaisha Compound solar battery and manufacturing method thereof
US7202141B2 (en) * 2004-03-29 2007-04-10 J.P. Sercel Associates, Inc. Method of separating layers of material
JP4518886B2 (ja) * 2004-09-09 2010-08-04 シャープ株式会社 半導体素子の製造方法
WO2007025062A2 (fr) * 2005-08-25 2007-03-01 Wakonda Technologies, Inc. Modele photovoltaique
US8927392B2 (en) * 2007-11-02 2015-01-06 Siva Power, Inc. Methods for forming crystalline thin-film photovoltaic structures
US8236603B1 (en) 2008-09-04 2012-08-07 Solexant Corp. Polycrystalline semiconductor layers and methods for forming the same
US8415187B2 (en) * 2009-01-28 2013-04-09 Solexant Corporation Large-grain crystalline thin-film structures and devices and methods for forming the same
US20100248413A1 (en) * 2009-03-31 2010-09-30 David Strand Monolithic Integration of Photovoltaic Cells
CN102696115A (zh) 2010-04-20 2012-09-26 松下电器产业株式会社 将膜接合到基板上的方法
EP2618385A1 (fr) 2012-01-20 2013-07-24 AZUR SPACE Solar Power GmbH Demi-produit d'une cellule solaire multiple et procédé de fabrication d'une cellule solaire multiple
US9831363B2 (en) * 2014-06-19 2017-11-28 John Farah Laser epitaxial lift-off of high efficiency solar cell
CN113948598B (zh) * 2021-10-18 2024-04-02 北京工业大学 一种柔性薄膜太阳能电池及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856962B2 (ja) * 1975-12-18 1983-12-17 セイコーエプソン株式会社 ハンドウタイソウチノ セイゾウホウホウ
US4227941A (en) * 1979-03-21 1980-10-14 Massachusetts Institute Of Technology Shallow-homojunction solar cells
EP0191503A3 (fr) * 1980-04-10 1986-09-10 Massachusetts Institute Of Technology Méthode de fabrication de feuilles en matériau cristallin
IL79735A0 (en) * 1985-09-09 1986-11-30 Hughes Aircraft Co Thin semiconductor structures

Also Published As

Publication number Publication date
JPS62171167A (ja) 1987-07-28
FR2593326A1 (fr) 1987-07-24
US4774194A (en) 1988-09-27

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Legal Events

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ST Notification of lapse