[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

FR2571896B1 - Photodetecteur infrarouge comprenant une couche epitaxiale de tellurure de cadmium et de mercure et son procede de fabrication - Google Patents

Photodetecteur infrarouge comprenant une couche epitaxiale de tellurure de cadmium et de mercure et son procede de fabrication

Info

Publication number
FR2571896B1
FR2571896B1 FR8507085A FR8507085A FR2571896B1 FR 2571896 B1 FR2571896 B1 FR 2571896B1 FR 8507085 A FR8507085 A FR 8507085A FR 8507085 A FR8507085 A FR 8507085A FR 2571896 B1 FR2571896 B1 FR 2571896B1
Authority
FR
France
Prior art keywords
mercury
manufacturing
epitaxial layer
cadmium telluride
infrared photodetector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8507085A
Other languages
English (en)
Other versions
FR2571896A1 (fr
Inventor
Malcolm John Bevan
Surendra Pratap Singh
Michael James Hyliands
Linda Kay Nicholson
Andrew William Gurnell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BAE Systems Electronics Ltd
Original Assignee
Marconi Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Marconi Co Ltd filed Critical Marconi Co Ltd
Publication of FR2571896A1 publication Critical patent/FR2571896A1/fr
Application granted granted Critical
Publication of FR2571896B1 publication Critical patent/FR2571896B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L31/02966—
    • H01L31/1832—

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Light Receiving Elements (AREA)
  • Glass Compositions (AREA)
  • Measurement Of Radiation (AREA)
  • Weting (AREA)
FR8507085A 1983-09-13 1985-05-06 Photodetecteur infrarouge comprenant une couche epitaxiale de tellurure de cadmium et de mercure et son procede de fabrication Expired FR2571896B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8324512 1983-09-13

Publications (2)

Publication Number Publication Date
FR2571896A1 FR2571896A1 (fr) 1986-04-18
FR2571896B1 true FR2571896B1 (fr) 1988-07-22

Family

ID=10548717

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8507085A Expired FR2571896B1 (fr) 1983-09-13 1985-05-06 Photodetecteur infrarouge comprenant une couche epitaxiale de tellurure de cadmium et de mercure et son procede de fabrication

Country Status (8)

Country Link
DE (1) DE3447954A1 (fr)
DK (1) DK436984A (fr)
FR (1) FR2571896B1 (fr)
GB (1) GB2165089B (fr)
IT (1) IT8567524A0 (fr)
NL (1) NL8415005A (fr)
NO (1) NO843614L (fr)
SE (1) SE8504828D0 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2833757B1 (fr) * 2001-12-13 2004-11-05 Commissariat Energie Atomique Dispositif d'emission de lumiere et procede de fabrication d'un tel dispositif
CN115197705B (zh) * 2022-05-30 2023-08-15 北京智创芯源科技有限公司 一种蚀刻液、一种碲镉汞红外焦平面混成芯片的减薄方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6910274A (fr) * 1969-07-04 1971-01-06
US4037311A (en) * 1976-07-14 1977-07-26 U.S. Philips Corporation Methods of manufacturing infra-red detector elements
GB2027986B (en) * 1978-07-31 1983-01-19 Philips Electronic Associated Infra-red detectors
GB2027556B (en) * 1978-07-31 1983-01-19 Philips Electronic Associated Manufacturing infra-red detectors

Also Published As

Publication number Publication date
DE3447954A1 (de) 1987-01-02
DK436984A (da) 1985-07-15
NL8415005A (nl) 1986-07-01
NO843614L (no) 1986-06-23
GB2165089B (en) 1987-06-03
GB2165089A (en) 1986-04-03
FR2571896A1 (fr) 1986-04-18
SE8504828D0 (sv) 1985-10-16
IT8567524A0 (it) 1985-06-06

Similar Documents

Publication Publication Date Title
FR2553083B1 (fr) Vitrage et son procede de fabrication
FR2533755B1 (fr) Photodetecteur et son procede de fabrication
BE895124A (fr) Pochemedicale et son procede de fabrication
FR2433681B1 (fr) Courroie de transmission et son procede de fabrication
FR2569566B1 (fr) Implant et son procede de fabrication
FR2491261B1 (fr) Pile solaire et son procede de fabrication
FR2504957B1 (fr) Element de construction et son procede de fabrication
FR2572610B1 (fr) Reseau de detecteurs infrarouges pbs-pbse et procede de fabrication
FR2542372B1 (fr) Culbuteur et son procede de fabrication
FR2554432B1 (fr) Elements de rembourrage et leur procede de fabrication
KR850004170A (ko) Soi형 반도체 장치의 제조방법
FR2537329B1 (fr) Resistance a couche de haute resistivite et son procede de fabrication
FR2578575B1 (fr) Vitrage multiple enrobe et son procede de fabrication
GB2081013B (en) Method of fabricating semiconductor pn junctions
FR2568725B1 (fr) Generateur thermo-electrique et son procede de fabrication
FR2533609B1 (fr) Carreau de plancher et son procede de fabrication
FR2603930B1 (fr) Panneau de plancher sureleve et son procede de fabrication
KR850004172A (ko) 분리 반도체 디바이스 구조 제조방법 및 그 구조
FR2571896B1 (fr) Photodetecteur infrarouge comprenant une couche epitaxiale de tellurure de cadmium et de mercure et son procede de fabrication
BE892201A (fr) Procede et dispositif de fabrication de verre en continu
FR2505036B1 (fr) Dispositif de refrigeration microminiature et son procede de fabrication
FR2529374B1 (fr) Element de circuit resistif et son procede de fabrication
MA20060A1 (fr) Structure de jonction de pli de pneumatique et son procede de fabrication.
FR2545269B1 (fr) Ecran electroluminescent et son procede de fabrication
JPS54130890A (en) Electroluminescent and photo detective diode and method of fabricating same

Legal Events

Date Code Title Description
ST Notification of lapse