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FR2417866A1 - Laser multiple a resonateur distribue - Google Patents

Laser multiple a resonateur distribue

Info

Publication number
FR2417866A1
FR2417866A1 FR7804529A FR7804529A FR2417866A1 FR 2417866 A1 FR2417866 A1 FR 2417866A1 FR 7804529 A FR7804529 A FR 7804529A FR 7804529 A FR7804529 A FR 7804529A FR 2417866 A1 FR2417866 A1 FR 2417866A1
Authority
FR
France
Prior art keywords
zone
grating
bands
junction
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7804529A
Other languages
English (en)
Other versions
FR2417866B1 (fr
Inventor
Marie-Antoinette Diforte
Michel Papuchon
Claude Puech
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7804529A priority Critical patent/FR2417866A1/fr
Priority to US06/011,926 priority patent/US4309667A/en
Publication of FR2417866A1 publication Critical patent/FR2417866A1/fr
Application granted granted Critical
Publication of FR2417866B1 publication Critical patent/FR2417866B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention se rapporte à un laser semi-conducteur à résonateur distribué destiné à fournir plusieurs rayonnements de longueurs d'onde différentes à partir d'un seul réseau gravé. Le laser multiple suivant l'invention comporte une jonction formée par un substrat type n, une zone de confinement du rayonnement, type p, et une zone superficielle, un réseau étant gravé à l'interface entre la zone de confinement et la zone superficielle. Des bandes élémentaires de la jonction utiles pour l'obtention de l'effet laser sont localisées par implantation protonique dans la zone superficielle de la jonction. Ces zones élémentaires en forme de bandes sont concourantes et font avec la normale aux traits du réseau des angles déterminés de telle manière que le pas le long des différentes bandes ait une valeur déterminée directement liée à la longueur d'onde du rayonnement émis correspondant. Application, notamment, au multiplexage en fréquence pour les télécommunications optiques.
FR7804529A 1978-02-17 1978-02-17 Laser multiple a resonateur distribue Granted FR2417866A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR7804529A FR2417866A1 (fr) 1978-02-17 1978-02-17 Laser multiple a resonateur distribue
US06/011,926 US4309667A (en) 1978-02-17 1979-02-13 Multiple laser having a distributed resonator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7804529A FR2417866A1 (fr) 1978-02-17 1978-02-17 Laser multiple a resonateur distribue

Publications (2)

Publication Number Publication Date
FR2417866A1 true FR2417866A1 (fr) 1979-09-14
FR2417866B1 FR2417866B1 (fr) 1980-09-12

Family

ID=9204721

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7804529A Granted FR2417866A1 (fr) 1978-02-17 1978-02-17 Laser multiple a resonateur distribue

Country Status (2)

Country Link
US (1) US4309667A (fr)
FR (1) FR2417866A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0641053A1 (fr) * 1993-08-30 1995-03-01 AT&T Corp. Méthode et dispositif de contrôle de la longeur d'onde dans des lasers du type DFB
EP0704946A1 (fr) * 1994-08-31 1996-04-03 Deutsche Telekom AG Composant opto-électronique multi-longueurs d'onde
US6208793B1 (en) 1997-03-01 2001-03-27 Deutsche Telekom Ag Wavelength-tunable optoelectronic apparatus

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4461007A (en) * 1982-01-08 1984-07-17 Xerox Corporation Injection lasers with short active regions
JPS58140177A (ja) * 1982-02-16 1983-08-19 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ
DE3580738D1 (de) * 1984-10-03 1991-01-10 Siemens Ag Verfahren zur integrierten herstellung eines dfb-lasers mit angekoppeltem streifenwellenleiter auf einem substrat.
JPS61113293A (ja) * 1984-11-07 1986-05-31 Sharp Corp 半導体レ−ザアレイ装置
FR2582154B1 (fr) * 1984-11-16 1989-03-17 Canon Kk Dispositif d'emission de faisceaux multiples comportant des elements semiconducteurs en particulier des diodes lasers
US4750801A (en) * 1985-09-30 1988-06-14 American Telephone And Telegraph Company, At&T Bell Laboratories Optical waveguide resonator filters
GB2192095B (en) * 1986-05-15 1989-12-06 Canon Kk Semiconductor laser array
US4799229A (en) * 1986-05-15 1989-01-17 Canon Kabushiki Kaisha Semiconductor laser array
GB2225482B (en) * 1988-11-23 1992-10-14 Stc Plc Multichannel cavity laser
JP2542444B2 (ja) * 1990-01-31 1996-10-09 シャープ株式会社 レ―ザ光発振装置
FR2681988A1 (fr) * 1991-09-27 1993-04-02 Thomson Csf Laser de puissance a deflexion.
US5630004A (en) * 1994-09-09 1997-05-13 Deacon Research Controllable beam director using poled structure
JPH08255947A (ja) * 1995-03-17 1996-10-01 Mitsubishi Electric Corp 半導体レーザ装置，及びその製造方法
FR2744292B1 (fr) * 1996-01-29 1998-04-30 Menigaux Louis Composant d'emission laser multi-longueur d'onde
US6011890A (en) * 1997-08-06 2000-01-04 Ceram Optec Industries, Inc. High power, multi-diode laser system
US6033926A (en) * 1998-06-04 2000-03-07 Lucent Technologies Inc. Method for making multiple wavelength semiconductor lasers on a single wafer
FR2784185B1 (fr) 1998-10-06 2001-02-02 Thomson Csf Dispositif pour l'harmonisation entre une voie d'emission laser et une voie passive d'observation
EP1391756A1 (fr) * 2002-08-20 2004-02-25 Agilent Technologies, Inc. - a Delaware corporation - Dispositif à réflecteur de Bragg distribué sélectif en longueur d'onde
CN115764542A (zh) * 2021-09-02 2023-03-07 中兴光电子技术有限公司 双波长半导体激光器及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2284124A1 (fr) * 1974-09-06 1976-04-02 Siemens Ag Agencement pour des elements reglables de guides d'ondes optiques

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2284124A1 (fr) * 1974-09-06 1976-04-02 Siemens Ag Agencement pour des elements reglables de guides d'ondes optiques

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0641053A1 (fr) * 1993-08-30 1995-03-01 AT&T Corp. Méthode et dispositif de contrôle de la longeur d'onde dans des lasers du type DFB
US5606573A (en) * 1993-08-30 1997-02-25 Lucent Technologies Inc. Method and apparatus for control of lasing wavelength in distributed feedback lasers
EP0704946A1 (fr) * 1994-08-31 1996-04-03 Deutsche Telekom AG Composant opto-électronique multi-longueurs d'onde
US6208793B1 (en) 1997-03-01 2001-03-27 Deutsche Telekom Ag Wavelength-tunable optoelectronic apparatus

Also Published As

Publication number Publication date
US4309667A (en) 1982-01-05
FR2417866B1 (fr) 1980-09-12

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