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FR2499316B1 - - Google Patents

Info

Publication number
FR2499316B1
FR2499316B1 FR8102131A FR8102131A FR2499316B1 FR 2499316 B1 FR2499316 B1 FR 2499316B1 FR 8102131 A FR8102131 A FR 8102131A FR 8102131 A FR8102131 A FR 8102131A FR 2499316 B1 FR2499316 B1 FR 2499316B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8102131A
Other languages
French (fr)
Other versions
FR2499316A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR8102131A priority Critical patent/FR2499316A1/en
Publication of FR2499316A1 publication Critical patent/FR2499316A1/en
Application granted granted Critical
Publication of FR2499316B1 publication Critical patent/FR2499316B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
FR8102131A 1981-02-04 1981-02-04 Silicon solar cell metallisation with chemically sculptured surface - uses metallisation of contacts post surface doping as mask for chemical etch to remove surface traps and reduce absorption in face layer Granted FR2499316A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8102131A FR2499316A1 (en) 1981-02-04 1981-02-04 Silicon solar cell metallisation with chemically sculptured surface - uses metallisation of contacts post surface doping as mask for chemical etch to remove surface traps and reduce absorption in face layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8102131A FR2499316A1 (en) 1981-02-04 1981-02-04 Silicon solar cell metallisation with chemically sculptured surface - uses metallisation of contacts post surface doping as mask for chemical etch to remove surface traps and reduce absorption in face layer

Publications (2)

Publication Number Publication Date
FR2499316A1 FR2499316A1 (en) 1982-08-06
FR2499316B1 true FR2499316B1 (en) 1983-11-18

Family

ID=9254828

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8102131A Granted FR2499316A1 (en) 1981-02-04 1981-02-04 Silicon solar cell metallisation with chemically sculptured surface - uses metallisation of contacts post surface doping as mask for chemical etch to remove surface traps and reduce absorption in face layer

Country Status (1)

Country Link
FR (1) FR2499316A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3712503A1 (en) * 1987-04-13 1988-11-03 Nukem Gmbh SOLAR CELL
WO2008043827A2 (en) * 2006-10-12 2008-04-17 Centrotherm Photovoltaics Ag Method for passivating solar cells
KR101714779B1 (en) 2010-10-11 2017-03-09 엘지전자 주식회사 Solar cell and manufacturing method thereof
TWI662715B (en) * 2017-10-27 2019-06-11 財團法人工業技術研究院 Solar cell

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5165774U (en) * 1974-11-20 1976-05-24
US4227941A (en) * 1979-03-21 1980-10-14 Massachusetts Institute Of Technology Shallow-homojunction solar cells

Also Published As

Publication number Publication date
FR2499316A1 (en) 1982-08-06

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Legal Events

Date Code Title Description
CA Change of address
CD Change of name or company name
ST Notification of lapse