FR2499316A1 - Perfectionnement a la realisation d'une cellule solaire en vue, notamment, de modeler l'epaisseur de sa couche active, et cellule ainsi obtenue - Google Patents
Perfectionnement a la realisation d'une cellule solaire en vue, notamment, de modeler l'epaisseur de sa couche active, et cellule ainsi obtenue Download PDFInfo
- Publication number
- FR2499316A1 FR2499316A1 FR8102131A FR8102131A FR2499316A1 FR 2499316 A1 FR2499316 A1 FR 2499316A1 FR 8102131 A FR8102131 A FR 8102131A FR 8102131 A FR8102131 A FR 8102131A FR 2499316 A1 FR2499316 A1 FR 2499316A1
- Authority
- FR
- France
- Prior art keywords
- layer
- cell
- surface layer
- metallisation
- lamellae
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 13
- 239000010703 silicon Substances 0.000 title claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 12
- 239000000126 substance Substances 0.000 title claims description 5
- 238000001465 metallisation Methods 0.000 title abstract 4
- 238000010521 absorption reaction Methods 0.000 title 1
- 239000010410 layer Substances 0.000 claims abstract description 59
- 239000002344 surface layer Substances 0.000 claims abstract description 22
- 230000001681 protective effect Effects 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- 238000003486 chemical etching Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 abstract description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 abstract description 4
- 230000002829 reductive effect Effects 0.000 abstract description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052796 boron Inorganic materials 0.000 abstract description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 abstract description 2
- 229910052719 titanium Inorganic materials 0.000 abstract description 2
- 239000010936 titanium Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract 3
- 239000004020 conductor Substances 0.000 abstract 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 abstract 1
- 229910010277 boron hydride Inorganic materials 0.000 abstract 1
- 230000003628 erosive effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 17
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003042 antagnostic effect Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229940072033 potash Drugs 0.000 description 1
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 1
- 235000015320 potassium carbonate Nutrition 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H01L31/068—
-
- H01L31/022425—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8102131A FR2499316A1 (fr) | 1981-02-04 | 1981-02-04 | Perfectionnement a la realisation d'une cellule solaire en vue, notamment, de modeler l'epaisseur de sa couche active, et cellule ainsi obtenue |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8102131A FR2499316A1 (fr) | 1981-02-04 | 1981-02-04 | Perfectionnement a la realisation d'une cellule solaire en vue, notamment, de modeler l'epaisseur de sa couche active, et cellule ainsi obtenue |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2499316A1 true FR2499316A1 (fr) | 1982-08-06 |
| FR2499316B1 FR2499316B1 (de) | 1983-11-18 |
Family
ID=9254828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8102131A Granted FR2499316A1 (fr) | 1981-02-04 | 1981-02-04 | Perfectionnement a la realisation d'une cellule solaire en vue, notamment, de modeler l'epaisseur de sa couche active, et cellule ainsi obtenue |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2499316A1 (de) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4886555A (en) * | 1987-04-13 | 1989-12-12 | Nukem Gmbh | Solar cell |
| WO2008043827A2 (de) * | 2006-10-12 | 2008-04-17 | Centrotherm Photovoltaics Ag | Verfahren zur passivierung von solarzellen |
| US8927854B2 (en) | 2010-10-11 | 2015-01-06 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
| US20190131472A1 (en) * | 2017-10-27 | 2019-05-02 | Industrial Technology Research Institute | Solar cell |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4029518A (en) * | 1974-11-20 | 1977-06-14 | Sharp Kabushiki Kaisha | Solar cell |
| US4227941A (en) * | 1979-03-21 | 1980-10-14 | Massachusetts Institute Of Technology | Shallow-homojunction solar cells |
-
1981
- 1981-02-04 FR FR8102131A patent/FR2499316A1/fr active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4029518A (en) * | 1974-11-20 | 1977-06-14 | Sharp Kabushiki Kaisha | Solar cell |
| US4227941A (en) * | 1979-03-21 | 1980-10-14 | Massachusetts Institute Of Technology | Shallow-homojunction solar cells |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4886555A (en) * | 1987-04-13 | 1989-12-12 | Nukem Gmbh | Solar cell |
| WO2008043827A2 (de) * | 2006-10-12 | 2008-04-17 | Centrotherm Photovoltaics Ag | Verfahren zur passivierung von solarzellen |
| WO2008043827A3 (de) * | 2006-10-12 | 2008-08-14 | Centrotherm Photovoltaics Ag | Verfahren zur passivierung von solarzellen |
| US8927854B2 (en) | 2010-10-11 | 2015-01-06 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
| DE102011115581B4 (de) | 2010-10-11 | 2020-04-23 | Lg Electronics Inc. | Verfahren zur Herstellung einer Solarzelle |
| US20190131472A1 (en) * | 2017-10-27 | 2019-05-02 | Industrial Technology Research Institute | Solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2499316B1 (de) | 1983-11-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CA | Change of address | ||
| CD | Change of name or company name | ||
| ST | Notification of lapse |