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FR2493046B1 - Convertisseur de rayonnement electromagnetique en signal electrique - Google Patents

Convertisseur de rayonnement electromagnetique en signal electrique

Info

Publication number
FR2493046B1
FR2493046B1 FR8119988A FR8119988A FR2493046B1 FR 2493046 B1 FR2493046 B1 FR 2493046B1 FR 8119988 A FR8119988 A FR 8119988A FR 8119988 A FR8119988 A FR 8119988A FR 2493046 B1 FR2493046 B1 FR 2493046B1
Authority
FR
France
Prior art keywords
electric signal
electromagnetic radiation
signal converter
converter
electromagnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8119988A
Other languages
English (en)
Other versions
FR2493046A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FIZICHESKY INST IM PN LEB
Original Assignee
FIZICHESKY INST IM PN LEB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FIZICHESKY INST IM PN LEB filed Critical FIZICHESKY INST IM PN LEB
Publication of FR2493046A1 publication Critical patent/FR2493046A1/fr
Application granted granted Critical
Publication of FR2493046B1 publication Critical patent/FR2493046B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Measurement Of Radiation (AREA)
FR8119988A 1980-10-23 1981-10-23 Convertisseur de rayonnement electromagnetique en signal electrique Expired FR2493046B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU802995104A SU915683A1 (ru) 1980-10-23 1980-10-23 ПРЕОБРАЗОВАТЕЛЬ ОПТИЧЕСКОГО ИЗЛУЧЕНИЯ в электрический сигнал на основе структуры

Publications (2)

Publication Number Publication Date
FR2493046A1 FR2493046A1 (fr) 1982-04-30
FR2493046B1 true FR2493046B1 (fr) 1985-11-15

Family

ID=20922673

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8119988A Expired FR2493046B1 (fr) 1980-10-23 1981-10-23 Convertisseur de rayonnement electromagnetique en signal electrique

Country Status (6)

Country Link
JP (1) JPS57103372A (fr)
DE (1) DE3141956A1 (fr)
FR (1) FR2493046B1 (fr)
GB (1) GB2087645B (fr)
IT (1) IT1168456B (fr)
SU (1) SU915683A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59115A (ja) * 1982-06-25 1984-01-05 Nippon Telegr & Teleph Corp <Ntt> 光フアイバの融着接続方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1044494A (en) * 1965-04-07 1966-09-28 Mullard Ltd Improvements in and relating to semiconductor devices
SE331864B (fr) * 1969-05-30 1971-01-18 Inst Halvledarforskning Ab
FR2137184B1 (fr) * 1971-05-14 1976-03-19 Commissariat Energie Atomique
US4016586A (en) * 1974-03-27 1977-04-05 Innotech Corporation Photovoltaic heterojunction device employing a wide bandgap material as an active layer
JPS6047752B2 (ja) * 1975-08-20 1985-10-23 松下電器産業株式会社 擦像管タ−ゲット
GB1553684A (en) * 1976-08-20 1979-09-26 Matsushita Electric Ind Co Ltd Photoconductive devices
US4176275A (en) * 1977-08-22 1979-11-27 Minnesota Mining And Manufacturing Company Radiation imaging and readout system and method utilizing a multi-layered device having a photoconductive insulative layer

Also Published As

Publication number Publication date
IT1168456B (it) 1987-05-20
DE3141956A1 (de) 1982-06-16
JPS6328502B2 (fr) 1988-06-08
JPS57103372A (en) 1982-06-26
FR2493046A1 (fr) 1982-04-30
GB2087645A (en) 1982-05-26
DE3141956C2 (fr) 1989-09-07
IT8141672A1 (it) 1983-04-22
SU915683A1 (ru) 1985-10-23
GB2087645B (en) 1984-12-05
IT8141672A0 (it) 1981-10-22

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Legal Events

Date Code Title Description
ST Notification of lapse