FR2337398A1 - Dispositif d'ecriture rapide pour cellules de memoire - Google Patents

Dispositif d'ecriture rapide pour cellules de memoire

Info

Publication number: FR2337398A1
Authority: FR; France
Prior art keywords: flops; flip; current consumption; cross coupled; coupled transistor
Prior art date: 1975-12-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

FR7540418A

Other languages

English (en)

Other versions

FR2337398B1 (fr

Inventor

Bernard Denis

Jean-Francois Joudinaud

Jean-Paul Rousseau

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Compagnie IBM France SAS

Original Assignee

Compagnie IBM France SAS

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1975-12-30

Filing date

1975-12-30

Publication date

1977-07-29

1975-12-30 Application filed by Compagnie IBM France SAS filed Critical Compagnie IBM France SAS

1975-12-30 Priority to FR7540418A priority Critical patent/FR2337398A1/fr

1976-12-01 Priority to DE19762654460 priority patent/DE2654460A1/de

1977-07-29 Publication of FR2337398A1 publication Critical patent/FR2337398A1/fr

1980-05-30 Application granted granted Critical

1980-05-30 Publication of FR2337398B1 publication Critical patent/FR2337398B1/fr

Status Granted legal-status Critical Current

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Static Random-Access Memory (AREA)

FR7540418A 1975-12-30 1975-12-30 Dispositif d'ecriture rapide pour cellules de memoire Granted FR2337398A1 (fr)

Priority Applications (2)

Application Number	Priority Date	Filing Date	Title
FR7540418A FR2337398A1 (fr)	1975-12-30	1975-12-30	Dispositif d'ecriture rapide pour cellules de memoire
DE19762654460 DE2654460A1 (de)	1975-12-30	1976-12-01	Schaltung zur erhoehung der schreibgeschwindigkeit fuer speicherzellen

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR7540418A FR2337398A1 (fr)	1975-12-30	1975-12-30	Dispositif d'ecriture rapide pour cellules de memoire

Publications (2)

Publication Number	Publication Date
FR2337398A1 true FR2337398A1 (fr)	1977-07-29
FR2337398B1 FR2337398B1 (fr)	1980-05-30

Family

ID=9164452

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR7540418A Granted FR2337398A1 (fr)	1975-12-30	1975-12-30	Dispositif d'ecriture rapide pour cellules de memoire

Country Status (2)

Country	Link
DE (1)	DE2654460A1 (fr)
FR (1)	FR2337398A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0021143A2 (fr) *	1979-06-28	1981-01-07	International Business Machines Corporation	Procédé et circuit de sélection et de décharge des capacités de lignes de bit d'une mémoire à haute intégration à semi-conducteurs

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5570993A (en) *	1978-11-24	1980-05-28	Hitachi Ltd	Memory circuit
SE9002558D0 (sv) *	1990-08-02	1990-08-02	Carlstedt Elektronik Ab	Processor

1975
- 1975-12-30 FR FR7540418A patent/FR2337398A1/fr active Granted
1976
- 1976-12-01 DE DE19762654460 patent/DE2654460A1/de not_active Withdrawn

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0021143A2 (fr) *	1979-06-28	1981-01-07	International Business Machines Corporation	Procédé et circuit de sélection et de décharge des capacités de lignes de bit d'une mémoire à haute intégration à semi-conducteurs
EP0021143A3 (en) *	1979-06-28	1981-01-14	International Business Machines Corporation	Method and circuit for discharging bit lines capacitances in an integrated semi-conductor memory, especially for the mtl technique

Also Published As

Publication number	Publication date
DE2654460A1 (de)	1977-07-07
FR2337398B1 (fr)	1980-05-30

Publication	Publication Date	Title
JPS558135A (en)	1980-01-21	Rewritable programable logic array
GB1516711A (en)	1978-07-05	Integrated circuit memory cells and memories utilising such cells
US3852800A (en)	1974-12-03	One transistor dynamic memory cell
GB1231227A (fr)	1971-05-12
JPS5480041A (en)	1979-06-26	Decoder circuit using power switch
GB1250109A (fr)	1971-10-20
KR870009396A (ko)	1987-10-26	불휘발성 반도체 기억장치
JPS5625288A (en)	1981-03-11	Bit line control circuit
JPS5661088A (en)	1981-05-26	Semiconductor memory device
GB1523737A (en)	1978-09-06	Writing information into semiconductor circuit storage cells
GB1464122A (en)	1977-02-09	Data storage apparatus
GB1486843A (en)	1977-09-28	Data storage circuits
GB1516134A (en)	1978-06-28	Electrical information store
ES404058A1 (es)	1975-06-01	Una disposicion de circuito para supresion automatica de escritura para sistemas de memoria cuyas celdas consisten entransistores bipolares en tecnologia integrada.
FR2337398A1 (fr)	1977-07-29	Dispositif d'ecriture rapide pour cellules de memoire
JPS5517869A (en)	1980-02-07	Semiconductor memory device
GB1281808A (en)	1972-07-19	Associative stores
JPS5733493A (en)	1982-02-23	Semiconductor storage device
GB1286307A (en)	1972-08-23	Circuits including schottky barrier diodes and methods of making them
GB1118054A (en)	1968-06-26	Computer memory circuits
US4138739A (en)	1979-02-06	Schottky bipolar two-port random-access memory
JPS55101185A (en)	1980-08-01	Semiconductor memory device
JPS54110742A (en)	1979-08-30	Nonvolatile semiconductor memory device
GB1281387A (en)	1972-07-12	Associative store
GB1335890A (en)	1973-10-31	Associative semiconductor memory

Legal Events

Date	Code	Title	Description
1981-10-30	ST	Notification of lapse