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FR2399486A1 - Procede de gravure d'une couche metallique par attaque ionique - Google Patents

Procede de gravure d'une couche metallique par attaque ionique

Info

Publication number
FR2399486A1
FR2399486A1 FR7724000A FR7724000A FR2399486A1 FR 2399486 A1 FR2399486 A1 FR 2399486A1 FR 7724000 A FR7724000 A FR 7724000A FR 7724000 A FR7724000 A FR 7724000A FR 2399486 A1 FR2399486 A1 FR 2399486A1
Authority
FR
France
Prior art keywords
protective
layer
metal
metal layer
ion etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7724000A
Other languages
English (en)
Other versions
FR2399486B1 (fr
Inventor
Jean-Pierre Andrieu
Jean-Pierre Pestie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Compagnie Generale dElectricite SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Generale dElectricite SA filed Critical Compagnie Generale dElectricite SA
Priority to FR7724000A priority Critical patent/FR2399486A1/fr
Publication of FR2399486A1 publication Critical patent/FR2399486A1/fr
Application granted granted Critical
Publication of FR2399486B1 publication Critical patent/FR2399486B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

L'invention concerne un procédé de gravure d'une couche métallique par attaque ionique. La couche métallique est protégée dans certaines zones par une couche d'un métal dont l'oxyde résiste bien à l'attaque et se forme grâce à la présence d'oxygène dans l'atmosphère d'attaque. Application à la réalisation des contacts métalliques de transistors bipolaires pour microondes.
FR7724000A 1977-08-04 1977-08-04 Procede de gravure d'une couche metallique par attaque ionique Granted FR2399486A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7724000A FR2399486A1 (fr) 1977-08-04 1977-08-04 Procede de gravure d'une couche metallique par attaque ionique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7724000A FR2399486A1 (fr) 1977-08-04 1977-08-04 Procede de gravure d'une couche metallique par attaque ionique

Publications (2)

Publication Number Publication Date
FR2399486A1 true FR2399486A1 (fr) 1979-03-02
FR2399486B1 FR2399486B1 (fr) 1981-03-06

Family

ID=9194219

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7724000A Granted FR2399486A1 (fr) 1977-08-04 1977-08-04 Procede de gravure d'une couche metallique par attaque ionique

Country Status (1)

Country Link
FR (1) FR2399486A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0056845A2 (fr) * 1981-01-27 1982-08-04 Siemens Aktiengesellschaft Réalisation d'un masque en oxyde métallique, en particulier par attaque ionique réactive
EP0260201A2 (fr) * 1986-09-11 1988-03-16 Fairchild Semiconductor Corporation Technique d'attaque par plasma utilisant un masque bicouche
DE3806287A1 (de) * 1988-02-27 1989-09-07 Asea Brown Boveri Aetzverfahren zur strukturierung einer mehrschicht-metallisierung
US5045150A (en) * 1986-09-11 1991-09-03 National Semiconductor Corp. Plasma etching using a bilayer mask
EP1124254A2 (fr) * 2000-02-09 2001-08-16 Infineon Technologies North America Corp. Masque dur facilement enlevable pour la fabrication d'un dispositif semiconducteur

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0056845A2 (fr) * 1981-01-27 1982-08-04 Siemens Aktiengesellschaft Réalisation d'un masque en oxyde métallique, en particulier par attaque ionique réactive
EP0056845A3 (en) * 1981-01-27 1982-09-01 Siemens Aktiengesellschaft Berlin Und Munchen Formation of metal oxide masks, especially by reactive ion etching
EP0260201A2 (fr) * 1986-09-11 1988-03-16 Fairchild Semiconductor Corporation Technique d'attaque par plasma utilisant un masque bicouche
EP0260201A3 (en) * 1986-09-11 1988-10-26 Fairchild Semiconductor Corporation Plasma etching using a bilayer mask
US5045150A (en) * 1986-09-11 1991-09-03 National Semiconductor Corp. Plasma etching using a bilayer mask
DE3806287A1 (de) * 1988-02-27 1989-09-07 Asea Brown Boveri Aetzverfahren zur strukturierung einer mehrschicht-metallisierung
EP1124254A2 (fr) * 2000-02-09 2001-08-16 Infineon Technologies North America Corp. Masque dur facilement enlevable pour la fabrication d'un dispositif semiconducteur
EP1124254A3 (fr) * 2000-02-09 2004-09-22 Infineon Technologies North America Corp. Masque dur facilement enlevable pour la fabrication d'un dispositif semiconducteur

Also Published As

Publication number Publication date
FR2399486B1 (fr) 1981-03-06

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Legal Events

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