[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

FR2383248A1 - Perfectionnements aux procedes de preparation de la surface de semiconducteurs et aux electrolytes utilisable pour cette preparation - Google Patents

Perfectionnements aux procedes de preparation de la surface de semiconducteurs et aux electrolytes utilisable pour cette preparation

Info

Publication number
FR2383248A1
FR2383248A1 FR7806805A FR7806805A FR2383248A1 FR 2383248 A1 FR2383248 A1 FR 2383248A1 FR 7806805 A FR7806805 A FR 7806805A FR 7806805 A FR7806805 A FR 7806805A FR 2383248 A1 FR2383248 A1 FR 2383248A1
Authority
FR
France
Prior art keywords
semiconductors
preparing
processes
preparation
electrolytes usable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7806805A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Post Office
Original Assignee
Post Office
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Post Office filed Critical Post Office
Publication of FR2383248A1 publication Critical patent/FR2383248A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02241—III-V semiconductor
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H01L21/30635—Electrolytic etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/3167—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation
    • H01L21/31679—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself of anodic oxidation of AIII BV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)

Abstract

On utilise un électrolyte à deux composants Le premier composant forme un oxyde à la surface du semiconducteur et le second composant dissout l'oxyde. Application au traitement de GaAs.
FR7806805A 1977-03-11 1978-03-09 Perfectionnements aux procedes de preparation de la surface de semiconducteurs et aux electrolytes utilisable pour cette preparation Withdrawn FR2383248A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB10455/77A GB1556778A (en) 1977-03-11 1977-03-11 Preparation of semiconductor surfaces

Publications (1)

Publication Number Publication Date
FR2383248A1 true FR2383248A1 (fr) 1978-10-06

Family

ID=9968180

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7806805A Withdrawn FR2383248A1 (fr) 1977-03-11 1978-03-09 Perfectionnements aux procedes de preparation de la surface de semiconducteurs et aux electrolytes utilisable pour cette preparation

Country Status (6)

Country Link
US (1) US4194954A (fr)
JP (1) JPS53135279A (fr)
DE (1) DE2810529A1 (fr)
FR (1) FR2383248A1 (fr)
GB (1) GB1556778A (fr)
NL (1) NL7802627A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4414066A (en) * 1982-09-10 1983-11-08 Bell Telephone Laboratories, Incorporated Electrochemical photoetching of compound semiconductors
US4685030A (en) * 1985-04-29 1987-08-04 Energy Conversion Devices, Inc. Surface mounted circuits including hybrid circuits, having CVD interconnects, and method of preparing the circuits
FR2675824B1 (fr) * 1991-04-26 1994-02-04 Alice Izrael Procede de traitement de la surface gravee d'un corps semi conducteur ou semi-isolant, circuits integres obtenus selon un tel procede et appareil d'oxydation anodique pour mettre en óoeuvre un tel procede.
US5911864A (en) * 1996-11-08 1999-06-15 Northrop Grumman Corporation Method of fabricating a semiconductor structure
US6103094A (en) * 1998-08-24 2000-08-15 General Electric Company Method for controlling electrochemical drilling
NL1014727C2 (nl) * 2000-03-23 2001-09-25 Univ Eindhoven Tech Werkwijze voor het elektrolytisch polijsten van een metaal in aanwezigheid van een elektrolytsamenstelling, alsmede een vormdeel verkregen volgens een dergelijke werkwijze.
KR100468865B1 (ko) * 2003-06-18 2005-01-29 삼성전자주식회사 이차원적인 도펀트 분포의 분석을 위한 선택적 전기화학에칭방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL216353A (fr) * 1956-06-16
NL249127A (fr) * 1959-04-08
BE792614A (fr) * 1971-12-13 1973-03-30 Western Electric Co Procede de realisation d'une couche d'oxyde sur un semi-conducteur
US3929589A (en) * 1974-02-08 1975-12-30 Bell Telephone Labor Inc Selective area oxidation of III-V compound semiconductors
US4006047A (en) * 1974-07-22 1977-02-01 Amp Incorporated Catalysts for electroless deposition of metals on comparatively low-temperature polyolefin and polyester substrates
US4026741A (en) * 1976-06-16 1977-05-31 Bell Telephone Laboratories, Incorporated Technique for preparation of stoichiometric III-V compound semiconductor surfaces

Also Published As

Publication number Publication date
JPS53135279A (en) 1978-11-25
DE2810529A1 (de) 1978-09-14
NL7802627A (nl) 1978-09-13
US4194954A (en) 1980-03-25
GB1556778A (en) 1979-11-28

Similar Documents

Publication Publication Date Title
FR2344962A1 (fr) Procede pour reduire le temps de commutation de composants semi-conducteurs et composants obtenus
IT1102583B (it) Apparecchio e procedimento per misurare le concentrazioni di globuli bianchi e di piastrine nel sangue
IT1083014B (it) Procedimento e dispositivo per l'esecuzione di processi elettrolitici
FR2383248A1 (fr) Perfectionnements aux procedes de preparation de la surface de semiconducteurs et aux electrolytes utilisable pour cette preparation
JPS5362826A (en) Quantitative determination of immunologically active substance in analysing sample
DK433087D0 (da) Monoklonale antistoffer og peptider, der kan anvendes til behandling og diagnose af hiv-infektioner
FR2362196A1 (fr) Composition adhesive en deux parties et a sechage rapide
FR1436945A (fr) Perfectionnements aux procédés pour la préparation et l'utilisation de levure active sèche en poudre, et à une telle levure
IT1047444B (it) Lega di alluminio elettrochimicamente attiva e procedimento per la sua preparazione e per il suo impiego
DE3789477D1 (de) Vorrichtung für Anwendung in der Kanalisation von Blutgefässen.
CH534215A (fr) Bain électrolytique pour l'électrodéposition d'alliages d'or et une utilisation de celui-ci
NL7609559A (nl) Werkwijze ter bereiding van oxazolidinonen alsmede geneeskrachtige middelen die deze ver- bindingen als actieve component bevatten.
BE851775A (fr) Composition pour le traitement de la chevelure
IT1079722B (it) Procedimento e composizione per l'analisi diagnostica ci catarro
FR2335950A1 (fr) Procede pour realiser la diffusion d'une impurete dans un corps semi-conducteur
FR2546162B1 (fr) Procede pour la preparation de 1,8-dihydroxy-10-acyl-9-anthrones, en particulier pour une utilisation dans le traitement du psoriasis
CH525963A (fr) Bain galvanique pour l'électrodéposition de l'or et son utilisation en galvanoplastie
JPS54124677A (en) Semiconductor device
FR2405106A1 (fr) Poupee mobile pour un appareil de tournage
IT1030933B (it) Procedimento per la preparazione di o cresolo e di 2,6 xilenolo
IT7926516A0 (it) Ibrido della euforbia di colore salmone e procedimento per la sua moltiplicazione vegetativa.
IT1054620B (it) Poli(idrossimetilene)idroinsolubile biologicamente attivo procedimento per la sua preparazione e suo impiego nella cromatografia per affinita
FR2333351A1 (fr) Dispositif d'application sous pression et de blocage pour elements semi-conducteurs
FR2291497A1 (fr) Serum pour le diagnostic de l'etat de gravidite chez les mammiferes
KR790000229B1 (en) Electroplating apparatus of plating one or more selected area of a workpiece

Legal Events

Date Code Title Description
ST Notification of lapse