[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

FR2378873A1 - Procede et dispositif de depot sur un recepteur d'une couche semi-conductrice - Google Patents

Procede et dispositif de depot sur un recepteur d'une couche semi-conductrice

Info

Publication number
FR2378873A1
FR2378873A1 FR7702723A FR7702723A FR2378873A1 FR 2378873 A1 FR2378873 A1 FR 2378873A1 FR 7702723 A FR7702723 A FR 7702723A FR 7702723 A FR7702723 A FR 7702723A FR 2378873 A1 FR2378873 A1 FR 2378873A1
Authority
FR
France
Prior art keywords
emitter
application
intermediate element
prodn
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7702723A
Other languages
English (en)
Other versions
FR2378873B1 (fr
Inventor
Ellin Petrovich Bochkarev
Nikolai Georgievich Voronin
Oleg Evgenievich Korobov
Vadim Nikolaevich Maslov
Irina Borisovna Nikitina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
G PI
Original Assignee
G PI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by G PI filed Critical G PI
Priority to FR7702723A priority Critical patent/FR2378873A1/fr
Publication of FR2378873A1 publication Critical patent/FR2378873A1/fr
Application granted granted Critical
Publication of FR2378873B1 publication Critical patent/FR2378873B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/22—Sandwich processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne la fabrication des matériaux semi-conducteurs. Dans le procédé de dépôt d'une couche de substance d'une source sur un récepteur consistant à transformer la substance d'une source 2 en gaz, puis à la faire déposer à la surface d'un récepteur 3, on fait déposer, selon l'invention, la substance d'au moins une source 2 sur au moins un corps intermédiaire 4, puis, à partir de ce corps intermédiaire 4, on fait déposer la substance sur le récepteur 3. L'invention s'utilise dans l'application de divers revêtements, la croissance de matériaux semi-conducteurs sur un support ainsi que pour conférer des propriétés prédéterminées à la surface d'un support récepteur.
FR7702723A 1977-02-01 1977-02-01 Procede et dispositif de depot sur un recepteur d'une couche semi-conductrice Granted FR2378873A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7702723A FR2378873A1 (fr) 1977-02-01 1977-02-01 Procede et dispositif de depot sur un recepteur d'une couche semi-conductrice

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7702723A FR2378873A1 (fr) 1977-02-01 1977-02-01 Procede et dispositif de depot sur un recepteur d'une couche semi-conductrice

Publications (2)

Publication Number Publication Date
FR2378873A1 true FR2378873A1 (fr) 1978-08-25
FR2378873B1 FR2378873B1 (fr) 1979-05-11

Family

ID=9186126

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7702723A Granted FR2378873A1 (fr) 1977-02-01 1977-02-01 Procede et dispositif de depot sur un recepteur d'une couche semi-conductrice

Country Status (1)

Country Link
FR (1) FR2378873A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2508063A1 (fr) * 1981-06-18 1982-12-24 Snecma Procede, en phase vapeur, pour le depot d'un revetement protecteur sur une piece metallique, dispositif pour sa mise en oeuvre et pieces obtenues selon ledit procede

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1463717A (fr) * 1965-01-26 1966-12-23 Danfoss As Perfectionnements apportés à la vaporisation de mélanges de substances sur un substrat
FR1485970A (fr) * 1965-07-05 1967-06-23 Siemens Ag Procédé de fabrication de couches à croissance épitaxiale en composés semiconducteurs binaires
FR1584608A (fr) * 1968-07-30 1969-12-26
FR2021226A1 (fr) * 1968-10-22 1970-07-17 Siemens Ag

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1463717A (fr) * 1965-01-26 1966-12-23 Danfoss As Perfectionnements apportés à la vaporisation de mélanges de substances sur un substrat
FR1485970A (fr) * 1965-07-05 1967-06-23 Siemens Ag Procédé de fabrication de couches à croissance épitaxiale en composés semiconducteurs binaires
FR1584608A (fr) * 1968-07-30 1969-12-26
FR2021226A1 (fr) * 1968-10-22 1970-07-17 Siemens Ag

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2508063A1 (fr) * 1981-06-18 1982-12-24 Snecma Procede, en phase vapeur, pour le depot d'un revetement protecteur sur une piece metallique, dispositif pour sa mise en oeuvre et pieces obtenues selon ledit procede
EP0068950A1 (fr) * 1981-06-18 1983-01-05 Societe Nationale D'etude Et De Construction De Moteurs D'aviation, "S.N.E.C.M.A." Procédé, en phase vapeur, pour le dépôt d'un revêtement protecteur sur une pièce métallique, dispositif pour sa mise en oeuvre et pièces obtenues selon ledit procédé

Also Published As

Publication number Publication date
FR2378873B1 (fr) 1979-05-11

Similar Documents

Publication Publication Date Title
ES457595A1 (es) Procedimiento para la formacion de recubrimientos metalicos o de compuesto metalico sobre una cara de un sustrato de vidrio.
EP0174743A3 (fr) Procédé de dépôt de films minces de nitrures de métaux de transition
JPS51129868A (en) A process for treatment of waste gas
JPS5265662A (en) Method and device for diffusion to semiconductor substrate by high fre quency induction heating
FR2378873A1 (fr) Procede et dispositif de depot sur un recepteur d'une couche semi-conductrice
NL7700148A (en) Emitter layer application in semiconductor prodn. - involves application of emitter from supply of an intermediate element, from which it is transferred to emitter support
JPS5351187A (en) Gas phase chemical evaporation apparatus
JPS5271174A (en) Production of semiconductor device
JPS5434676A (en) Vapor growth method and apparatus for high-purity semiconductor layer
JPS5269578A (en) Wafer suscepter
JPS53126867A (en) Cvd apparatus
JPS5423379A (en) Formation of insulating film on semiconductor surface
NL7802009A (nl) Chemische dampafzetting van een laag van amorfe fosfor-stikstof-zuurstof samenstelling, etsen van een dergelijke laag, materiaal van dergelijke samenstelling en halfgeleiderinrichting voorzien van dergelijke laag.
JPS5223265A (en) Method of processing semiconductor materials
JPS5376980A (en) Gas phase growth method of compound semiconductor
JPS5383588A (en) Manufacture of substrate for semiconductor light emitting device
JPS6459808A (en) Growth of semiconductor
JPS5210681A (en) Method for treating surface of semiconductor substrate
JPS6425984A (en) Formation of deposited film
JPS53126260A (en) Vapor phase reaction heating susceptor of semiconductor
JPS6421081A (en) Formation of aluminum nitride film
JPS51119686A (en) A method for forming a film on the metal surface
JPS51142275A (en) Method of manufacturing insulating film for semiconductor
JPS6441212A (en) Semiconductor crystal growth method
MD930G2 (ro) Procedeu de obţinere a straturilor de materiale semiconductoare din fază gazoasă

Legal Events

Date Code Title Description
ST Notification of lapse