FR2369652A1 - Memoire morte programmable a transistors - Google Patents
Memoire morte programmable a transistorsInfo
- Publication number
- FR2369652A1 FR2369652A1 FR7632739A FR7632739A FR2369652A1 FR 2369652 A1 FR2369652 A1 FR 2369652A1 FR 7632739 A FR7632739 A FR 7632739A FR 7632739 A FR7632739 A FR 7632739A FR 2369652 A1 FR2369652 A1 FR 2369652A1
- Authority
- FR
- France
- Prior art keywords
- memory
- low voltage
- voltage pulses
- row
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011159 matrix material Substances 0.000 title abstract 3
- 239000000463 material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
Mémoire morte électriquement programmable à transistors bipolaires intégrés en matrice XY. Ensemble dont les transistors points mémoires ont des jonctions émetteur-base et base-collecteur de surface identique et limitées par des parois de cordons d'isolement en matériau isolant Application aux mémoires mortes programmables, en particulier avec des circuits logiques à émetteurs couplés.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7632739A FR2369652A1 (fr) | 1976-10-29 | 1976-10-29 | Memoire morte programmable a transistors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7632739A FR2369652A1 (fr) | 1976-10-29 | 1976-10-29 | Memoire morte programmable a transistors |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2369652A1 true FR2369652A1 (fr) | 1978-05-26 |
FR2369652B1 FR2369652B1 (fr) | 1981-11-27 |
Family
ID=9179395
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7632739A Granted FR2369652A1 (fr) | 1976-10-29 | 1976-10-29 | Memoire morte programmable a transistors |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2369652A1 (fr) |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0008946A2 (fr) * | 1978-09-08 | 1980-03-19 | Fujitsu Limited | Dispositif de mémoire à semi-conducteur |
EP0018173A1 (fr) * | 1979-04-13 | 1980-10-29 | Fujitsu Limited | Dispositif de mémoire morte programmable |
EP0045848A1 (fr) * | 1980-08-08 | 1982-02-17 | International Business Machines Corporation | Circuits intégrés semiconducteurs planaires comportant des structures de transistors bipolaires et procédé de fabrication correspondant |
FR2512999A1 (fr) * | 1981-09-14 | 1983-03-18 | Radiotechnique Compelec | Dispositif semiconducteur formant memoire morte programmable a transistors |
EP0084465A2 (fr) * | 1982-01-04 | 1983-07-27 | Fairchild Semiconductor Corporation | Procédé d'isolation par oxyde pour cellules RAM/PROM standard et cellules RAM à transistor PNP latéral |
EP0087360A2 (fr) * | 1982-02-18 | 1983-08-31 | Fairchild Semiconductor Corporation | Mémoires de lecture programmables à jonction |
FR2525012A1 (fr) * | 1982-04-12 | 1983-10-14 | Philips Nv | Memoire de lecture programmable et son procede de fabrication |
FR2525011A1 (fr) * | 1982-04-12 | 1983-10-14 | Philips Nv | Memoire de lecture programmable et son procede de fabrication |
US4624046A (en) * | 1982-01-04 | 1986-11-25 | Fairchild Camera & Instrument Corp. | Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM |
US4694566A (en) * | 1982-04-12 | 1987-09-22 | Signetics Corporation | Method for manufacturing programmable read-only memory containing cells formed with opposing diodes |
US4727409A (en) * | 1982-04-12 | 1988-02-23 | Signetics Corporation | Programmable read-only memory formed with opposing PN diodes |
EP0258149A2 (fr) * | 1986-08-29 | 1988-03-02 | Fairchild Semiconductor Corporation | Fusible vertical à émetteur faiblement dopé |
US4933736A (en) * | 1982-04-12 | 1990-06-12 | North American Philips Corporation, Signetics Division | Programmable read-only memory |
US5059555A (en) * | 1990-08-20 | 1991-10-22 | National Semiconductor Corporation | Method to fabricate vertical fuse devices and Schottky diodes using thin sacrificial layer |
EP0538792A2 (fr) * | 1991-10-21 | 1993-04-28 | Rohm Co., Ltd. | FET multicanal à lignes étroites ayant une caractéristique de bruit améliore |
US5212102A (en) * | 1990-08-22 | 1993-05-18 | National Semiconductor Corporation | Method of making polysilicon Schottky clamped transistor and vertical fuse devices |
US5436496A (en) * | 1986-08-29 | 1995-07-25 | National Semiconductor Corporation | Vertical fuse device |
-
1976
- 1976-10-29 FR FR7632739A patent/FR2369652A1/fr active Granted
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0008946B1 (fr) * | 1978-09-08 | 1986-01-15 | Fujitsu Limited | Dispositif de mémoire à semi-conducteur |
EP0008946A2 (fr) * | 1978-09-08 | 1980-03-19 | Fujitsu Limited | Dispositif de mémoire à semi-conducteur |
EP0018173A1 (fr) * | 1979-04-13 | 1980-10-29 | Fujitsu Limited | Dispositif de mémoire morte programmable |
EP0045848A1 (fr) * | 1980-08-08 | 1982-02-17 | International Business Machines Corporation | Circuits intégrés semiconducteurs planaires comportant des structures de transistors bipolaires et procédé de fabrication correspondant |
FR2512999A1 (fr) * | 1981-09-14 | 1983-03-18 | Radiotechnique Compelec | Dispositif semiconducteur formant memoire morte programmable a transistors |
EP0084465A2 (fr) * | 1982-01-04 | 1983-07-27 | Fairchild Semiconductor Corporation | Procédé d'isolation par oxyde pour cellules RAM/PROM standard et cellules RAM à transistor PNP latéral |
US4624046A (en) * | 1982-01-04 | 1986-11-25 | Fairchild Camera & Instrument Corp. | Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM |
EP0084465A3 (en) * | 1982-01-04 | 1986-02-05 | Fairchild Camera & Instrument Corporation | Oxide isolation process for standard ram/prom and lateral pnp cell ram |
EP0087360A3 (en) * | 1982-02-18 | 1986-02-05 | Fairchild Camera & Instrument Corporation | Technique for programming junction-programmable read-only memories |
EP0087360A2 (fr) * | 1982-02-18 | 1983-08-31 | Fairchild Semiconductor Corporation | Mémoires de lecture programmables à jonction |
US4933736A (en) * | 1982-04-12 | 1990-06-12 | North American Philips Corporation, Signetics Division | Programmable read-only memory |
FR2525011A1 (fr) * | 1982-04-12 | 1983-10-14 | Philips Nv | Memoire de lecture programmable et son procede de fabrication |
FR2525012A1 (fr) * | 1982-04-12 | 1983-10-14 | Philips Nv | Memoire de lecture programmable et son procede de fabrication |
US4694566A (en) * | 1982-04-12 | 1987-09-22 | Signetics Corporation | Method for manufacturing programmable read-only memory containing cells formed with opposing diodes |
US4727409A (en) * | 1982-04-12 | 1988-02-23 | Signetics Corporation | Programmable read-only memory formed with opposing PN diodes |
DE3312648A1 (de) * | 1982-04-12 | 1983-10-27 | N.V. Philips' Gloeilampenfabrieken, 5621 Eindhoven | Programmierbarer lesespeicher und verfahren zum herstellen desselben |
EP0258149A2 (fr) * | 1986-08-29 | 1988-03-02 | Fairchild Semiconductor Corporation | Fusible vertical à émetteur faiblement dopé |
EP0258149A3 (fr) * | 1986-08-29 | 1988-10-05 | Fairchild Semiconductor Corporation | Fusible vertical à émetteur faiblement dopé |
US5436496A (en) * | 1986-08-29 | 1995-07-25 | National Semiconductor Corporation | Vertical fuse device |
US5059555A (en) * | 1990-08-20 | 1991-10-22 | National Semiconductor Corporation | Method to fabricate vertical fuse devices and Schottky diodes using thin sacrificial layer |
US5212102A (en) * | 1990-08-22 | 1993-05-18 | National Semiconductor Corporation | Method of making polysilicon Schottky clamped transistor and vertical fuse devices |
EP0538792A2 (fr) * | 1991-10-21 | 1993-04-28 | Rohm Co., Ltd. | FET multicanal à lignes étroites ayant une caractéristique de bruit améliore |
EP0538792A3 (en) * | 1991-10-21 | 1993-06-02 | Rohm Co., Ltd. | Multiple narrow-line-channel fet having improved noise characteristics |
Also Published As
Publication number | Publication date |
---|---|
FR2369652B1 (fr) | 1981-11-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CA | Change of address | ||
CD | Change of name or company name | ||
ST | Notification of lapse |