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FR2369652A1 - Memoire morte programmable a transistors - Google Patents

Memoire morte programmable a transistors

Info

Publication number
FR2369652A1
FR2369652A1 FR7632739A FR7632739A FR2369652A1 FR 2369652 A1 FR2369652 A1 FR 2369652A1 FR 7632739 A FR7632739 A FR 7632739A FR 7632739 A FR7632739 A FR 7632739A FR 2369652 A1 FR2369652 A1 FR 2369652A1
Authority
FR
France
Prior art keywords
memory
low voltage
voltage pulses
row
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7632739A
Other languages
English (en)
Other versions
FR2369652B1 (fr
Inventor
Michel Moussie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7632739A priority Critical patent/FR2369652A1/fr
Publication of FR2369652A1 publication Critical patent/FR2369652A1/fr
Application granted granted Critical
Publication of FR2369652B1 publication Critical patent/FR2369652B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642Isolation within the component, i.e. internal isolation
    • H01L29/0649Dielectric regions, e.g. SiO2 regions, air gaps
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/763Polycrystalline semiconductor regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/732Vertical transistors
    • H01L29/7325Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B69/00Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

Mémoire morte électriquement programmable à transistors bipolaires intégrés en matrice XY. Ensemble dont les transistors points mémoires ont des jonctions émetteur-base et base-collecteur de surface identique et limitées par des parois de cordons d'isolement en matériau isolant Application aux mémoires mortes programmables, en particulier avec des circuits logiques à émetteurs couplés.
FR7632739A 1976-10-29 1976-10-29 Memoire morte programmable a transistors Granted FR2369652A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7632739A FR2369652A1 (fr) 1976-10-29 1976-10-29 Memoire morte programmable a transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7632739A FR2369652A1 (fr) 1976-10-29 1976-10-29 Memoire morte programmable a transistors

Publications (2)

Publication Number Publication Date
FR2369652A1 true FR2369652A1 (fr) 1978-05-26
FR2369652B1 FR2369652B1 (fr) 1981-11-27

Family

ID=9179395

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7632739A Granted FR2369652A1 (fr) 1976-10-29 1976-10-29 Memoire morte programmable a transistors

Country Status (1)

Country Link
FR (1) FR2369652A1 (fr)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008946A2 (fr) * 1978-09-08 1980-03-19 Fujitsu Limited Dispositif de mémoire à semi-conducteur
EP0018173A1 (fr) * 1979-04-13 1980-10-29 Fujitsu Limited Dispositif de mémoire morte programmable
EP0045848A1 (fr) * 1980-08-08 1982-02-17 International Business Machines Corporation Circuits intégrés semiconducteurs planaires comportant des structures de transistors bipolaires et procédé de fabrication correspondant
FR2512999A1 (fr) * 1981-09-14 1983-03-18 Radiotechnique Compelec Dispositif semiconducteur formant memoire morte programmable a transistors
EP0084465A2 (fr) * 1982-01-04 1983-07-27 Fairchild Semiconductor Corporation Procédé d'isolation par oxyde pour cellules RAM/PROM standard et cellules RAM à transistor PNP latéral
EP0087360A2 (fr) * 1982-02-18 1983-08-31 Fairchild Semiconductor Corporation Mémoires de lecture programmables à jonction
FR2525012A1 (fr) * 1982-04-12 1983-10-14 Philips Nv Memoire de lecture programmable et son procede de fabrication
FR2525011A1 (fr) * 1982-04-12 1983-10-14 Philips Nv Memoire de lecture programmable et son procede de fabrication
US4624046A (en) * 1982-01-04 1986-11-25 Fairchild Camera & Instrument Corp. Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM
US4694566A (en) * 1982-04-12 1987-09-22 Signetics Corporation Method for manufacturing programmable read-only memory containing cells formed with opposing diodes
US4727409A (en) * 1982-04-12 1988-02-23 Signetics Corporation Programmable read-only memory formed with opposing PN diodes
EP0258149A2 (fr) * 1986-08-29 1988-03-02 Fairchild Semiconductor Corporation Fusible vertical à émetteur faiblement dopé
US4933736A (en) * 1982-04-12 1990-06-12 North American Philips Corporation, Signetics Division Programmable read-only memory
US5059555A (en) * 1990-08-20 1991-10-22 National Semiconductor Corporation Method to fabricate vertical fuse devices and Schottky diodes using thin sacrificial layer
EP0538792A2 (fr) * 1991-10-21 1993-04-28 Rohm Co., Ltd. FET multicanal à lignes étroites ayant une caractéristique de bruit améliore
US5212102A (en) * 1990-08-22 1993-05-18 National Semiconductor Corporation Method of making polysilicon Schottky clamped transistor and vertical fuse devices
US5436496A (en) * 1986-08-29 1995-07-25 National Semiconductor Corporation Vertical fuse device

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008946B1 (fr) * 1978-09-08 1986-01-15 Fujitsu Limited Dispositif de mémoire à semi-conducteur
EP0008946A2 (fr) * 1978-09-08 1980-03-19 Fujitsu Limited Dispositif de mémoire à semi-conducteur
EP0018173A1 (fr) * 1979-04-13 1980-10-29 Fujitsu Limited Dispositif de mémoire morte programmable
EP0045848A1 (fr) * 1980-08-08 1982-02-17 International Business Machines Corporation Circuits intégrés semiconducteurs planaires comportant des structures de transistors bipolaires et procédé de fabrication correspondant
FR2512999A1 (fr) * 1981-09-14 1983-03-18 Radiotechnique Compelec Dispositif semiconducteur formant memoire morte programmable a transistors
EP0084465A2 (fr) * 1982-01-04 1983-07-27 Fairchild Semiconductor Corporation Procédé d'isolation par oxyde pour cellules RAM/PROM standard et cellules RAM à transistor PNP latéral
US4624046A (en) * 1982-01-04 1986-11-25 Fairchild Camera & Instrument Corp. Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM
EP0084465A3 (en) * 1982-01-04 1986-02-05 Fairchild Camera & Instrument Corporation Oxide isolation process for standard ram/prom and lateral pnp cell ram
EP0087360A3 (en) * 1982-02-18 1986-02-05 Fairchild Camera & Instrument Corporation Technique for programming junction-programmable read-only memories
EP0087360A2 (fr) * 1982-02-18 1983-08-31 Fairchild Semiconductor Corporation Mémoires de lecture programmables à jonction
US4933736A (en) * 1982-04-12 1990-06-12 North American Philips Corporation, Signetics Division Programmable read-only memory
FR2525011A1 (fr) * 1982-04-12 1983-10-14 Philips Nv Memoire de lecture programmable et son procede de fabrication
FR2525012A1 (fr) * 1982-04-12 1983-10-14 Philips Nv Memoire de lecture programmable et son procede de fabrication
US4694566A (en) * 1982-04-12 1987-09-22 Signetics Corporation Method for manufacturing programmable read-only memory containing cells formed with opposing diodes
US4727409A (en) * 1982-04-12 1988-02-23 Signetics Corporation Programmable read-only memory formed with opposing PN diodes
DE3312648A1 (de) * 1982-04-12 1983-10-27 N.V. Philips' Gloeilampenfabrieken, 5621 Eindhoven Programmierbarer lesespeicher und verfahren zum herstellen desselben
EP0258149A2 (fr) * 1986-08-29 1988-03-02 Fairchild Semiconductor Corporation Fusible vertical à émetteur faiblement dopé
EP0258149A3 (fr) * 1986-08-29 1988-10-05 Fairchild Semiconductor Corporation Fusible vertical à émetteur faiblement dopé
US5436496A (en) * 1986-08-29 1995-07-25 National Semiconductor Corporation Vertical fuse device
US5059555A (en) * 1990-08-20 1991-10-22 National Semiconductor Corporation Method to fabricate vertical fuse devices and Schottky diodes using thin sacrificial layer
US5212102A (en) * 1990-08-22 1993-05-18 National Semiconductor Corporation Method of making polysilicon Schottky clamped transistor and vertical fuse devices
EP0538792A2 (fr) * 1991-10-21 1993-04-28 Rohm Co., Ltd. FET multicanal à lignes étroites ayant une caractéristique de bruit améliore
EP0538792A3 (en) * 1991-10-21 1993-06-02 Rohm Co., Ltd. Multiple narrow-line-channel fet having improved noise characteristics

Also Published As

Publication number Publication date
FR2369652B1 (fr) 1981-11-27

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