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FR2344847A1 - METHOD FOR DETECTION OF ELECTRICALLY ACTIVE FAULTS IN A TYPE N SILICON SUBSTRATE - Google Patents

METHOD FOR DETECTION OF ELECTRICALLY ACTIVE FAULTS IN A TYPE N SILICON SUBSTRATE

Info

Publication number
FR2344847A1
FR2344847A1 FR7702072A FR7702072A FR2344847A1 FR 2344847 A1 FR2344847 A1 FR 2344847A1 FR 7702072 A FR7702072 A FR 7702072A FR 7702072 A FR7702072 A FR 7702072A FR 2344847 A1 FR2344847 A1 FR 2344847A1
Authority
FR
France
Prior art keywords
detection
type
silicon substrate
electrically active
active faults
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7702072A
Other languages
French (fr)
Other versions
FR2344847B1 (en
Inventor
John L Deines
Michael R Poponiak
Robert O Schwenker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2344847A1 publication Critical patent/FR2344847A1/en
Application granted granted Critical
Publication of FR2344847B1 publication Critical patent/FR2344847B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2637—Circuits therefor for testing other individual devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Weting (AREA)
FR7702072A 1976-03-15 1977-01-18 METHOD FOR DETECTION OF ELECTRICALLY ACTIVE FAULTS IN A TYPE N SILICON SUBSTRATE Granted FR2344847A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US66723276A 1976-03-15 1976-03-15

Publications (2)

Publication Number Publication Date
FR2344847A1 true FR2344847A1 (en) 1977-10-14
FR2344847B1 FR2344847B1 (en) 1979-09-28

Family

ID=24677379

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7702072A Granted FR2344847A1 (en) 1976-03-15 1977-01-18 METHOD FOR DETECTION OF ELECTRICALLY ACTIVE FAULTS IN A TYPE N SILICON SUBSTRATE

Country Status (6)

Country Link
JP (1) JPS52111373A (en)
CA (1) CA1069221A (en)
DE (1) DE2707372C2 (en)
FR (1) FR2344847A1 (en)
GB (1) GB1514697A (en)
IT (1) IT1118013B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2532760A1 (en) * 1982-09-08 1984-03-09 Comp Generale Electricite METHOD AND DEVICE FOR OBTAINING PHYSICAL CHARACTERISTICS OF A SEMICONDUCTOR MATERIAL

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066920A (en) * 1983-09-22 1985-04-17 北興化工機株式会社 Conveyable silage vessel
DE59006874D1 (en) * 1989-05-31 1994-09-29 Siemens Ag Method for determining the recombination rate of minority carriers at interfaces between semiconductors and other substances.
DE3917702A1 (en) * 1989-05-31 1990-12-06 Siemens Ag METHOD FOR DETERMINING THE DIFFERENTIAL LENGTH OF MINORITY CHARGE CARRIERS IN A SEMICONDUCTOR CRYSTAL BODY BY MEANS OF AN ELECTROLYTIC CELL
DE59010140D1 (en) * 1989-05-31 1996-03-28 Siemens Ag Method for large-area electrical contacting of a semiconductor crystal body with the help of electrolytes
DE4328083A1 (en) * 1993-08-20 1994-03-31 Ignaz Eisele Microscopic measuring of surface topography and potential distribution - laterally displacing field effect structure relative to scanned surface
JP4916249B2 (en) * 2006-08-10 2012-04-11 新電元工業株式会社 Inspection method of semiconductor substrate

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3655540A (en) * 1970-06-22 1972-04-11 Bell Telephone Labor Inc Method of making semiconductor device components
US3902979A (en) * 1974-06-24 1975-09-02 Westinghouse Electric Corp Insulator substrate with a thin mono-crystalline semiconductive layer and method of fabrication

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN VOL. 18, NO.10, MARS 1976, NEW YORK USA J.L.DEINES ET AL.: "TECHNIQUE FOR ANALYSIS AND DISTRIBUTION OF AUTODOPING IN EXPITAXIAL FILMS", PAGES 3290-3291.) *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2532760A1 (en) * 1982-09-08 1984-03-09 Comp Generale Electricite METHOD AND DEVICE FOR OBTAINING PHYSICAL CHARACTERISTICS OF A SEMICONDUCTOR MATERIAL
EP0103806A1 (en) * 1982-09-08 1984-03-28 COMPAGNIE GENERALE D'ELECTRICITE Société anonyme dite: Method and apparatus for studying the physical characteristics of a semi-conducting plate

Also Published As

Publication number Publication date
CA1069221A (en) 1980-01-01
JPS5320380B2 (en) 1978-06-26
GB1514697A (en) 1978-06-21
IT1118013B (en) 1986-02-24
DE2707372A1 (en) 1977-09-22
JPS52111373A (en) 1977-09-19
FR2344847B1 (en) 1979-09-28
DE2707372C2 (en) 1985-08-22

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Legal Events

Date Code Title Description
ST Notification of lapse