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FR2110240A1 - - Google Patents

Info

Publication number
FR2110240A1
FR2110240A1 FR7135758A FR7135758A FR2110240A1 FR 2110240 A1 FR2110240 A1 FR 2110240A1 FR 7135758 A FR7135758 A FR 7135758A FR 7135758 A FR7135758 A FR 7135758A FR 2110240 A1 FR2110240 A1 FR 2110240A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7135758A
Other versions
FR2110240B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Brake English Electric Semi Conductors Ltd
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake English Electric Semi Conductors Ltd
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake English Electric Semi Conductors Ltd, Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake English Electric Semi Conductors Ltd
Publication of FR2110240A1 publication Critical patent/FR2110240A1/fr
Application granted granted Critical
Publication of FR2110240B1 publication Critical patent/FR2110240B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Bipolar Integrated Circuits (AREA)
FR7135758A 1970-10-06 1971-10-05 Expired FR2110240B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4743270 1970-10-06

Publications (2)

Publication Number Publication Date
FR2110240A1 true FR2110240A1 (fr) 1972-06-02
FR2110240B1 FR2110240B1 (fr) 1977-04-22

Family

ID=10444948

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7135758A Expired FR2110240B1 (fr) 1970-10-06 1971-10-05

Country Status (6)

Country Link
US (1) US3725752A (fr)
JP (1) JPS5423228B1 (fr)
DE (1) DE2149038C2 (fr)
FR (1) FR2110240B1 (fr)
GB (1) GB1303338A (fr)
SE (1) SE375190B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2341204A1 (fr) * 1976-02-12 1977-09-09 Mitsubishi Electric Corp Dispositif semi-conducteur

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3896476A (en) * 1973-05-02 1975-07-22 Mitsubishi Electric Corp Semiconductor switching device
US4083063A (en) * 1973-10-09 1978-04-04 General Electric Company Gate turnoff thyristor with a pilot scr
GB1586171A (en) * 1977-01-31 1981-03-18 Rca Corp Gate turn-off device
US4673844A (en) * 1985-09-30 1987-06-16 Texas Instruments Incorporated Starter circuit for a fluorescent tube lamp
WO2003073509A1 (fr) * 2002-02-28 2003-09-04 Stmicroelectronics S.R.L. Structure de transistor bipolaire

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3265909A (en) * 1963-09-03 1966-08-09 Gen Electric Semiconductor switch comprising a controlled rectifier supplying base drive to a transistor
US3590339A (en) * 1970-01-30 1971-06-29 Westinghouse Electric Corp Gate controlled switch transistor drive integrated circuit (thytran)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1464960A1 (de) * 1963-09-03 1969-08-28 Gen Electric Halbleiter-Schalter
JPS5118811B2 (fr) * 1972-08-01 1976-06-12

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3265909A (en) * 1963-09-03 1966-08-09 Gen Electric Semiconductor switch comprising a controlled rectifier supplying base drive to a transistor
US3590339A (en) * 1970-01-30 1971-06-29 Westinghouse Electric Corp Gate controlled switch transistor drive integrated circuit (thytran)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2341204A1 (fr) * 1976-02-12 1977-09-09 Mitsubishi Electric Corp Dispositif semi-conducteur

Also Published As

Publication number Publication date
DE2149038A1 (de) 1972-04-13
DE2149038C2 (de) 1982-06-24
SE375190B (fr) 1975-04-07
JPS5423228B1 (fr) 1979-08-11
US3725752A (en) 1973-04-03
GB1303338A (fr) 1973-01-17
FR2110240B1 (fr) 1977-04-22

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Legal Events

Date Code Title Description
ST Notification of lapse