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FR2047920B3 - - Google Patents

Info

Publication number
FR2047920B3
FR2047920B3 FR707022779A FR7022779A FR2047920B3 FR 2047920 B3 FR2047920 B3 FR 2047920B3 FR 707022779 A FR707022779 A FR 707022779A FR 7022779 A FR7022779 A FR 7022779A FR 2047920 B3 FR2047920 B3 FR 2047920B3
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR707022779A
Other versions
FR2047920A7 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of FR2047920A7 publication Critical patent/FR2047920A7/fr
Application granted granted Critical
Publication of FR2047920B3 publication Critical patent/FR2047920B3/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Protection Of Static Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR707022779A 1969-06-25 1970-06-19 Expired FR2047920B3 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US83626669A 1969-06-25 1969-06-25

Publications (2)

Publication Number Publication Date
FR2047920A7 FR2047920A7 (fr) 1971-03-19
FR2047920B3 true FR2047920B3 (fr) 1973-04-06

Family

ID=25271586

Family Applications (1)

Application Number Title Priority Date Filing Date
FR707022779A Expired FR2047920B3 (fr) 1969-06-25 1970-06-19

Country Status (5)

Country Link
US (1) US3601625A (fr)
DE (1) DE2030423A1 (fr)
FR (1) FR2047920B3 (fr)
GB (1) GB1316819A (fr)
NL (1) NL7009126A (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673427A (en) * 1970-02-02 1972-06-27 Electronic Arrays Input circuit structure for mos integrated circuits
US4099074A (en) * 1975-03-06 1978-07-04 Sharp Kabushiki Kaisha Touch sensitive electronic switching circuitry for electronic wristwatches
US3999205A (en) * 1975-04-03 1976-12-21 Rca Corporation Rectifier structure for a semiconductor integrated circuit device
US4168442A (en) * 1975-07-18 1979-09-18 Tokyo Shibaura Electric Co., Ltd. CMOS FET device with abnormal current flow prevention
US4209713A (en) * 1975-07-18 1980-06-24 Tokyo Shibaura Electric Co., Ltd. Semiconductor integrated circuit device in which difficulties caused by parasitic transistors are eliminated
US4131928A (en) * 1977-06-24 1978-12-26 Motorola, Inc. Voltage clamp device for monolithic circuits
JPH061833B2 (ja) * 1982-11-11 1994-01-05 株式会社東芝 Mos形半導体装置
JPS61158175A (ja) * 1984-12-28 1986-07-17 Toshiba Corp プレ−ナ型トランジスタ装置
JPS61218143A (ja) * 1985-03-25 1986-09-27 Hitachi Ltd 半導体集積回路装置
US5227657A (en) * 1991-12-20 1993-07-13 Intel Corporation Base-emitter reverse bias protection for bicmos ic
US5446413A (en) * 1994-05-20 1995-08-29 Knowles Electronics, Inc. Impedance circuit for a miniature hearing aid
US7220953B2 (en) * 2005-03-18 2007-05-22 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Photodiode circuit with improved response time
US10985156B2 (en) * 2018-01-10 2021-04-20 Marvell Asia Pte., Ltd. Electrostatic discharge clamp with reduced off-state power consumption

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3466511A (en) * 1967-05-05 1969-09-09 Westinghouse Electric Corp Insulated gate field effect transistors with means preventing overvoltage feedthrough by auxiliary structure providing bipolar transistor action through substrate
US3474347A (en) * 1967-09-26 1969-10-21 Keithley Instruments Opeational amplifier
US3470390A (en) * 1968-02-02 1969-09-30 Westinghouse Electric Corp Integrated back-to-back diodes to prevent breakdown of mis gate dielectric
US3512058A (en) * 1968-04-10 1970-05-12 Rca Corp High voltage transient protection for an insulated gate field effect transistor

Also Published As

Publication number Publication date
US3601625A (en) 1971-08-24
FR2047920A7 (fr) 1971-03-19
GB1316819A (en) 1973-05-16
NL7009126A (fr) 1970-12-29
DE2030423A1 (de) 1971-01-07

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