FR2046925B1 - - Google Patents
Info
- Publication number
- FR2046925B1 FR2046925B1 FR7022802A FR7022802A FR2046925B1 FR 2046925 B1 FR2046925 B1 FR 2046925B1 FR 7022802 A FR7022802 A FR 7022802A FR 7022802 A FR7022802 A FR 7022802A FR 2046925 B1 FR2046925 B1 FR 2046925B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H01L29/00—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H01L29/73—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/04—Dopants, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/041—Doping control in crystal growth
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4795069 | 1969-06-19 | ||
| JP4795969A JPS4924515B1 (fr) | 1969-06-19 | 1969-06-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2046925A1 FR2046925A1 (fr) | 1971-03-12 |
| FR2046925B1 true FR2046925B1 (fr) | 1973-10-19 |
Family
ID=26388155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7022802A Expired FR2046925B1 (fr) | 1969-06-19 | 1970-06-19 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3717507A (fr) |
| DE (1) | DE2030403B2 (fr) |
| FR (1) | FR2046925B1 (fr) |
| GB (1) | GB1283133A (fr) |
| NL (1) | NL162789C (fr) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5223715B2 (fr) * | 1972-03-27 | 1977-06-25 | ||
| JPS524426B2 (fr) * | 1973-04-20 | 1977-02-03 | ||
| US3873372A (en) * | 1973-07-09 | 1975-03-25 | Ibm | Method for producing improved transistor devices |
| JPS5242634B2 (fr) * | 1973-09-03 | 1977-10-25 | ||
| DE2405067C2 (de) * | 1974-02-02 | 1982-06-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen einer Halbleiteranordnung |
| DE2449688C3 (de) * | 1974-10-18 | 1980-07-10 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung einer dotierten Zone eines Leitfähigkeitstyps in einem Halbleiterkörper |
| US4001050A (en) * | 1975-11-10 | 1977-01-04 | Ncr Corporation | Method of fabricating an isolated p-n junction |
| US4067037A (en) * | 1976-04-12 | 1978-01-03 | Massachusetts Institute Of Technology | Transistor having high ft at low currents |
| US4168990A (en) * | 1977-04-04 | 1979-09-25 | International Rectifier Corporation | Hot implantation at 1100°-1300° C. for forming non-gaussian impurity profile |
| JPS543479A (en) * | 1977-06-09 | 1979-01-11 | Toshiba Corp | Semiconductor device and its manufacture |
| SU773793A1 (ru) * | 1977-11-02 | 1980-10-23 | Предприятие П/Я -6429 | Способ изготовлени полупроводниковых интегральных бипол рных схем |
| FR2454698A1 (fr) * | 1979-04-20 | 1980-11-14 | Radiotechnique Compelec | Procede de realisation de circuits integres a l'aide d'un masque multicouche et dispositifs obtenus par ce procede |
| WO1981001911A1 (fr) * | 1979-12-28 | 1981-07-09 | Ibm | Procede pour obtenir un profil de base a impurete ideal dans un transistor |
| US4252582A (en) * | 1980-01-25 | 1981-02-24 | International Business Machines Corporation | Self aligned method for making bipolar transistor having minimum base to emitter contact spacing |
| US4416055A (en) * | 1981-12-04 | 1983-11-22 | Gte Laboratories Incorporated | Method of fabricating a monolithic integrated circuit structure |
| JPS60175453A (ja) * | 1984-02-20 | 1985-09-09 | Matsushita Electronics Corp | トランジスタの製造方法 |
| JPS60258964A (ja) * | 1984-06-06 | 1985-12-20 | Hitachi Ltd | 半導体装置の製造方法 |
| JPS63182860A (ja) * | 1987-01-26 | 1988-07-28 | Toshiba Corp | 半導体装置とその製造方法 |
| US4933295A (en) * | 1987-05-08 | 1990-06-12 | Raytheon Company | Method of forming a bipolar transistor having closely spaced device regions |
| US5064773A (en) * | 1988-12-27 | 1991-11-12 | Raytheon Company | Method of forming bipolar transistor having closely spaced device regions |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1484390A (fr) * | 1965-06-23 | 1967-06-09 | Ion Physics Corp | Procédé de fabrication de dispositifs semi-conducteurs |
| FR1564052A (fr) * | 1968-03-07 | 1969-04-18 |
-
1970
- 1970-06-17 US US00046898A patent/US3717507A/en not_active Expired - Lifetime
- 1970-06-18 NL NL7008911.A patent/NL162789C/xx active
- 1970-06-19 FR FR7022802A patent/FR2046925B1/fr not_active Expired
- 1970-06-19 GB GB29958/70A patent/GB1283133A/en not_active Expired
- 1970-06-19 DE DE2030403A patent/DE2030403B2/de not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| US3717507A (en) | 1973-02-20 |
| GB1283133A (en) | 1972-07-26 |
| DE2030403A1 (de) | 1971-01-07 |
| NL162789C (nl) | 1980-06-16 |
| NL7008911A (fr) | 1970-12-22 |
| FR2046925A1 (fr) | 1971-03-12 |
| DE2030403B2 (de) | 1978-06-01 |