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FR1592935A - - Google Patents

Info

Publication number
FR1592935A
FR1592935A FR1592935DA FR1592935A FR 1592935 A FR1592935 A FR 1592935A FR 1592935D A FR1592935D A FR 1592935DA FR 1592935 A FR1592935 A FR 1592935A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1592935A publication Critical patent/FR1592935A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
FR1592935D 1968-02-15 1968-11-25 Expired FR1592935A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US70566068A 1968-02-15 1968-02-15

Publications (1)

Publication Number Publication Date
FR1592935A true FR1592935A (fr) 1970-05-19

Family

ID=24834419

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1592935D Expired FR1592935A (fr) 1968-02-15 1968-11-25

Country Status (6)

Country Link
US (1) US3534231A (fr)
DE (1) DE1806624C3 (fr)
ES (1) ES360557A1 (fr)
FR (1) FR1592935A (fr)
GB (1) GB1236986A (fr)
NL (1) NL6816224A (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3846821A (en) * 1968-11-04 1974-11-05 Hitachi Ltd Lateral transistor having emitter region with portions of different impurity concentration
DE2006729C3 (de) * 1970-02-13 1980-02-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer Halbleiterdiode
FR2108781B1 (fr) * 1970-10-05 1974-10-31 Radiotechnique Compelec
US3693016A (en) * 1971-05-24 1972-09-19 Bell & Howell Co Semi-conductive apparatus for detecting light of given flux density levels
JPS5213918B2 (fr) * 1972-02-02 1977-04-18
US3806777A (en) * 1972-07-03 1974-04-23 Ibm Visual optimization of light emitting diodes
US3886579A (en) * 1972-07-28 1975-05-27 Hitachi Ltd Avalanche photodiode
FR2252653B1 (fr) * 1973-11-28 1976-10-01 Thomson Csf
US4079405A (en) * 1974-07-05 1978-03-14 Hitachi, Ltd. Semiconductor photodetector
CA1078948A (fr) * 1976-08-06 1980-06-03 Adrian R. Hartman Methode de fabrication de photodiodes au silicium
US4127932A (en) * 1976-08-06 1978-12-05 Bell Telephone Laboratories, Incorporated Method of fabricating silicon photodiodes
US4171528A (en) * 1977-06-13 1979-10-16 International Telephone And Telegraph Corporation Solderable zener diode
US4110778A (en) * 1977-06-21 1978-08-29 The United States Of America As Represented By The Secretary Of The Air Force Narrow-band inverted homo-heterojunction avalanche photodiode
CA1080836A (fr) * 1977-09-21 1980-07-01 Paul P. Webb Photodiode a avalanche, a elements multiples au bruit electrique reduit
JPS6057714B2 (ja) * 1978-01-27 1985-12-16 株式会社日立製作所 光半導体装置
JPS5852347B2 (ja) * 1980-02-04 1983-11-22 株式会社日立製作所 高耐圧半導体装置
US4403397A (en) * 1981-07-13 1983-09-13 The United States Of America As Represented By The Secretary Of The Navy Method of making avalanche photodiodes
US4441114A (en) * 1981-12-22 1984-04-03 International Business Machines Corporation CMOS Subsurface breakdown zener diode
DE3227472A1 (de) * 1982-07-22 1984-02-02 Siemens AG, 1000 Berlin und 8000 München Massnahme zur vermeidung von randdurchbruechen bei avalanche-halbleiterdioden
US4616247A (en) * 1983-11-10 1986-10-07 At&T Bell Laboratories P-I-N and avalanche photodiodes
US4757363A (en) * 1984-09-14 1988-07-12 Harris Corporation ESD protection network for IGFET circuits with SCR prevention guard rings
IT1317199B1 (it) * 2000-04-10 2003-05-27 Milano Politecnico Dispositivo fotorivelatore ultrasensibile con diaframma micrometricointegrato per microscopi confocali
US10490687B2 (en) 2018-01-29 2019-11-26 Waymo Llc Controlling detection time in photodetectors

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3319138A (en) * 1962-11-27 1967-05-09 Texas Instruments Inc Fast switching high current avalanche transistor
US3275910A (en) * 1963-01-18 1966-09-27 Motorola Inc Planar transistor with a relative higher-resistivity base region
NL290930A (fr) * 1963-03-29
US3293010A (en) * 1964-01-02 1966-12-20 Motorola Inc Passivated alloy diode
US3359137A (en) * 1964-03-19 1967-12-19 Electro Optical Systems Inc Solar cell configuration
US3410735A (en) * 1965-10-22 1968-11-12 Motorola Inc Method of forming a temperature compensated reference diode
US3378915A (en) * 1966-03-31 1968-04-23 Northern Electric Co Method of making a planar diffused semiconductor voltage reference diode

Also Published As

Publication number Publication date
NL6816224A (fr) 1969-08-19
DE1806624C3 (de) 1979-01-11
US3534231A (en) 1970-10-13
DE1806624A1 (de) 1969-10-16
DE1806624B2 (fr) 1978-05-03
ES360557A1 (es) 1970-07-16
GB1236986A (en) 1971-06-23

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