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FR1317256A - Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets - Google Patents

Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets

Info

Publication number
FR1317256A
FR1317256A FR882222A FR882222A FR1317256A FR 1317256 A FR1317256 A FR 1317256A FR 882222 A FR882222 A FR 882222A FR 882222 A FR882222 A FR 882222A FR 1317256 A FR1317256 A FR 1317256A
Authority
FR
France
Prior art keywords
tecnetrons
multibrand
semiconductor devices
devices known
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR882222A
Other languages
English (en)
Inventor
Teszner Stanislas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR882222A priority Critical patent/FR1317256A/fr
Priority to CH1436162A priority patent/CH415859A/fr
Priority to US243793A priority patent/US3274461A/en
Priority to GB47059/62A priority patent/GB1010192A/en
Priority to NL286774D priority patent/NL286774A/nl
Priority to DET23200A priority patent/DE1207015B/de
Application granted granted Critical
Publication of FR1317256A publication Critical patent/FR1317256A/fr
Priority to BE655058A priority patent/BE655058A/fr
Priority to FR110177A priority patent/FR93111E/fr
Priority to FR124739A priority patent/FR93763E/fr
Priority to FR130477A priority patent/FR93857E/fr
Priority to FR144708A priority patent/FR94388E/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/018—Compensation doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
FR882222A 1961-12-16 1961-12-16 Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets Expired FR1317256A (fr)

Priority Applications (11)

Application Number Priority Date Filing Date Title
FR882222A FR1317256A (fr) 1961-12-16 1961-12-16 Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets
CH1436162A CH415859A (fr) 1961-12-16 1962-12-07 Dispositif semi-conducteur à effet de champ
US243793A US3274461A (en) 1961-12-16 1962-12-11 High frequency and power field effect transistor with mesh-like gate structure
GB47059/62A GB1010192A (en) 1961-12-16 1962-12-13 Improvements in or relating to semi-conductor devices
NL286774D NL286774A (nl) 1961-12-16 1962-12-14 Halfgeleiderinrichting
DET23200A DE1207015B (de) 1961-12-16 1962-12-14 Transistor, insbesondere Unipolartransistor mit einem plattenfoermigen Halbleiterkoerper eines Leitungstyps und Verfahren zum Herstellen
BE655058A BE655058A (fr) 1961-12-16 1964-10-30 Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets
FR110177A FR93111E (fr) 1961-12-16 1967-06-13 Perfectionnements aux dispositifs semiconducteurs dits tecnétrons multibatonnets.
FR124739A FR93763E (fr) 1961-12-16 1967-10-17 Perfectionnements aux dispositifs semiconducteurs dits tecnetrons multibatonnets.
FR130477A FR93857E (fr) 1961-12-16 1967-11-30 Perfectionnements aux dispositifs semi-conducteurs dits teenetrons multibatonnets.
FR144708A FR94388E (fr) 1961-12-16 1968-03-21 Perfectionnements aux dispositifs semiconducteurs dits tecnétrons multibatonnets.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR882222A FR1317256A (fr) 1961-12-16 1961-12-16 Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets

Publications (1)

Publication Number Publication Date
FR1317256A true FR1317256A (fr) 1963-02-08

Family

ID=8768888

Family Applications (1)

Application Number Title Priority Date Filing Date
FR882222A Expired FR1317256A (fr) 1961-12-16 1961-12-16 Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets

Country Status (7)

Country Link
US (1) US3274461A (fr)
BE (1) BE655058A (fr)
CH (1) CH415859A (fr)
DE (1) DE1207015B (fr)
FR (1) FR1317256A (fr)
GB (1) GB1010192A (fr)
NL (1) NL286774A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1293900B (de) * 1963-07-26 1969-04-30 Teszner Stanislas Feldeffekt-Halbleiterbauelement
FR2501913A1 (fr) * 1981-03-10 1982-09-17 Thomson Csf Transistor a effet de champ de type planar comportant des electrodes a puits metallises et procede de fabrication de ce transistor
FR2514949A1 (fr) * 1981-10-16 1983-04-22 Thomson Csf Transistor a effet de champ a canal vertical
EP0167812A1 (fr) * 1984-06-08 1986-01-15 Eaton Corporation JFET vertical à double porte

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3381187A (en) * 1964-08-18 1968-04-30 Hughes Aircraft Co High-frequency field-effect triode device
US3381188A (en) * 1964-08-18 1968-04-30 Hughes Aircraft Co Planar multi-channel field-effect triode
US3354362A (en) * 1965-03-23 1967-11-21 Hughes Aircraft Co Planar multi-channel field-effect tetrode
US3430113A (en) * 1965-10-04 1969-02-25 Us Air Force Current modulated field effect transistor
NL6711612A (fr) * 1966-12-22 1968-06-24
DE1764911A1 (de) * 1968-09-02 1971-12-02 Telefunken Patent Unipolaranordnung
FR2157740B1 (fr) * 1971-10-29 1976-10-29 Thomson Csf
NL165334C (nl) * 1971-12-27 1981-03-16 Fujitsu Ltd Veldeffecttransistor.
JPS5134268B2 (fr) * 1972-07-13 1976-09-25
US3855608A (en) * 1972-10-24 1974-12-17 Motorola Inc Vertical channel junction field-effect transistors and method of manufacture
US3938241A (en) * 1972-10-24 1976-02-17 Motorola, Inc. Vertical channel junction field-effect transistors and method of manufacture
US4132996A (en) * 1976-11-08 1979-01-02 General Electric Company Electric field-controlled semiconductor device
US4170019A (en) * 1977-08-05 1979-10-02 General Electric Company Semiconductor device with variable grid openings for controlling turn-off pattern
US4191602A (en) * 1978-04-24 1980-03-04 General Electric Company Liquid phase epitaxial method of making a high power, vertical channel field effect transistor
DE2926741C2 (de) * 1979-07-03 1982-09-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Feldeffekt-Transistor und Verfahren zu seiner Herstellung
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor
US5032538A (en) * 1979-08-10 1991-07-16 Massachusetts Institute Of Technology Semiconductor embedded layer technology utilizing selective epitaxial growth methods
US4378629A (en) * 1979-08-10 1983-04-05 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor, fabrication method
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
US4641174A (en) * 1983-08-08 1987-02-03 General Electric Company Pinch rectifier
US4670764A (en) * 1984-06-08 1987-06-02 Eaton Corporation Multi-channel power JFET with buried field shaping regions
US4635084A (en) * 1984-06-08 1987-01-06 Eaton Corporation Split row power JFET

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB500342A (en) * 1937-09-18 1939-02-07 British Thomson Houston Co Ltd Improvements relating to dry surface-contact electric rectifiers
CH307776A (de) * 1952-01-08 1955-06-15 Ericsson Telefon Ab L M Kontaktvorrichtung an einem Halbleiterelement.
US2930950A (en) * 1956-12-10 1960-03-29 Teszner Stanislas High power field-effect transistor
US2968750A (en) * 1957-03-20 1961-01-17 Clevite Corp Transistor structure and method of making the same
US3044909A (en) * 1958-10-23 1962-07-17 Shockley William Semiconductive wafer and method of making the same
US3025438A (en) * 1959-09-18 1962-03-13 Tungsol Electric Inc Field effect transistor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1293900B (de) * 1963-07-26 1969-04-30 Teszner Stanislas Feldeffekt-Halbleiterbauelement
FR2501913A1 (fr) * 1981-03-10 1982-09-17 Thomson Csf Transistor a effet de champ de type planar comportant des electrodes a puits metallises et procede de fabrication de ce transistor
EP0061376A1 (fr) * 1981-03-10 1982-09-29 Thomson-Csf Transistor à effet de champ de type planar comportant des électrodes à puits métallisés, et procédé de fabrication de ce transistor
FR2514949A1 (fr) * 1981-10-16 1983-04-22 Thomson Csf Transistor a effet de champ a canal vertical
EP0077706A1 (fr) * 1981-10-16 1983-04-27 Thomson-Csf Transistor à effet de champ à canal vertical
US4529997A (en) * 1981-10-16 1985-07-16 Thomson-Csf Permeable base transistor
EP0167812A1 (fr) * 1984-06-08 1986-01-15 Eaton Corporation JFET vertical à double porte

Also Published As

Publication number Publication date
CH415859A (fr) 1966-06-30
BE655058A (fr) 1965-02-15
US3274461A (en) 1966-09-20
DE1207015B (de) 1965-12-16
NL286774A (nl) 1964-03-10
GB1010192A (en) 1965-11-17

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