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ES2092804T3 - Dispositivo semiconductor y procedimiento para su fabricacion a base de microondas. - Google Patents

Dispositivo semiconductor y procedimiento para su fabricacion a base de microondas.

Info

Publication number
ES2092804T3
ES2092804T3 ES93900605T ES93900605T ES2092804T3 ES 2092804 T3 ES2092804 T3 ES 2092804T3 ES 93900605 T ES93900605 T ES 93900605T ES 93900605 T ES93900605 T ES 93900605T ES 2092804 T3 ES2092804 T3 ES 2092804T3
Authority
ES
Spain
Prior art keywords
microwaves
procedure
semiconductor device
manufacture based
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES93900605T
Other languages
English (en)
Inventor
Subhendu Guha
Arindam Banerjee
Chi C Yang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Solar Systems Corp
Original Assignee
United Solar Systems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Solar Systems Corp filed Critical United Solar Systems Corp
Application granted granted Critical
Publication of ES2092804T3 publication Critical patent/ES2092804T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Photovoltaic Devices (AREA)

Abstract

EL VOLTAJE DE CIRCUITO ABIERTO DE DISPOSITIVOS FOTOVOLTAICOS MANUFACTURADOS POR UN PROCESO DE DEPOSICION POR MICROONDAS SE INCREMENTA DISPONIENDO UN CABLE DE DESVIO EN EL PLASMA ENERGIZADO DE MICROONDAS Y APLICANDO UN VOLTAJE POSITIVO DE APROXIMADAMENTE 100 VOLTIOS AL CABLE DURANTE SOLAMENTE UNA PARTE DEL TIEMPO EN EL CUAL ESTA SIENDO DEPOSITADA LA CAPA SEMICONDUCTORA INTRINSECA (12A, 12B).
ES93900605T 1991-12-13 1992-11-23 Dispositivo semiconductor y procedimiento para su fabricacion a base de microondas. Expired - Lifetime ES2092804T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/808,209 US5204272A (en) 1991-12-13 1991-12-13 Semiconductor device and microwave process for its manufacture

Publications (1)

Publication Number Publication Date
ES2092804T3 true ES2092804T3 (es) 1996-12-01

Family

ID=25198182

Family Applications (1)

Application Number Title Priority Date Filing Date
ES93900605T Expired - Lifetime ES2092804T3 (es) 1991-12-13 1992-11-23 Dispositivo semiconductor y procedimiento para su fabricacion a base de microondas.

Country Status (6)

Country Link
US (1) US5204272A (es)
EP (1) EP0616729B1 (es)
AU (1) AU3223193A (es)
DE (1) DE69213759T2 (es)
ES (1) ES2092804T3 (es)
WO (1) WO1993012546A1 (es)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298086A (en) * 1992-05-15 1994-03-29 United Solar Systems Corporation Method for the manufacture of improved efficiency tandem photovoltaic device and device manufactured thereby
US5476798A (en) * 1992-06-29 1995-12-19 United Solar Systems Corporation Plasma deposition process with substrate temperature control
JP2761156B2 (ja) * 1992-06-30 1998-06-04 キヤノン株式会社 光起電力素子及びその製造方法、並びにそれを用いた発電装置
AU674886B2 (en) * 1992-11-16 1997-01-16 Canon Kabushiki Kaisha Photoelectric conversion element and power generation system using the same
CA2102948C (en) * 1992-11-16 1998-10-27 Keishi Saito Photoelectric conversion element and power generation system using the same
US5719076A (en) * 1996-04-24 1998-02-17 United Solar Systems Corporation Method for the manufacture of semiconductor devices with optimized hydrogen content
US5885751A (en) * 1996-11-08 1999-03-23 Applied Materials, Inc. Method and apparatus for depositing deep UV photoresist films
USD406302S (en) * 1997-11-21 1999-03-02 Simpson Craig B Bow stand
US6287943B1 (en) 1998-07-31 2001-09-11 Canon Kabushiki Kaisha Deposition of semiconductor layer by plasma process
DE19935046C2 (de) * 1999-07-26 2001-07-12 Schott Glas Plasma-CVD-Verfahren und Vorrichtung zur Herstellung einer mikrokristallinen Si:H-Schicht auf einem Substrat sowie deren Verwendung
US6559052B2 (en) * 2000-07-07 2003-05-06 Applied Materials, Inc. Deposition of amorphous silicon films by high density plasma HDP-CVD at low temperatures
JP3490964B2 (ja) 2000-09-05 2004-01-26 三洋電機株式会社 光起電力装置
JP4171428B2 (ja) * 2003-03-20 2008-10-22 三洋電機株式会社 光起電力装置
US7361930B2 (en) * 2005-03-21 2008-04-22 Agilent Technologies, Inc. Method for forming a multiple layer passivation film and a device incorporating the same
EP1918967B1 (en) * 2006-11-02 2013-12-25 Dow Corning Corporation Method of forming a film by deposition from a plasma
KR20100095426A (ko) * 2007-11-02 2010-08-30 어플라이드 머티어리얼스, 인코포레이티드 증착 공정들 간의 플라즈마 처리
DE102009044496B4 (de) * 2009-11-11 2023-11-02 Muegge Gmbh Vorrichtung zur Erzeugung von Plasma mittels Mikrowellen
US8653360B2 (en) * 2010-08-04 2014-02-18 International Business Machines Corporation Compositionally-graded band gap heterojunction solar cell
US20120103417A1 (en) * 2010-10-29 2012-05-03 Du Pont Apollo Limited Solar cell with graded bandgap
US9040340B2 (en) * 2011-11-14 2015-05-26 International Business Machines Corporation Temperature grading for band gap engineering of photovoltaic devices
US8281917B1 (en) * 2012-05-23 2012-10-09 Paradigm Circuit Solutions Inc. System and method to automate transport of electronic devices on an assembly line for testing
WO2014146008A2 (en) * 2013-03-15 2014-09-18 Starfire Industries Llc Scalable multi-role surface-wave plasma generator

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4379943A (en) * 1981-12-14 1983-04-12 Energy Conversion Devices, Inc. Current enhanced photovoltaic device
US4517223A (en) * 1982-09-24 1985-05-14 Sovonics Solar Systems Method of making amorphous semiconductor alloys and devices using microwave energy
US4471155A (en) * 1983-04-15 1984-09-11 Energy Conversion Devices, Inc. Narrow band gap photovoltaic devices with enhanced open circuit voltage
US4619729A (en) * 1984-02-14 1986-10-28 Energy Conversion Devices, Inc. Microwave method of making semiconductor members
US4547621A (en) * 1984-06-25 1985-10-15 Sovonics Solar Systems Stable photovoltaic devices and method of producing same
US4582773A (en) * 1985-05-02 1986-04-15 Energy Conversion Devices, Inc. Electrophotographic photoreceptor and method for the fabrication thereof
JPS627859A (ja) * 1985-07-05 1987-01-14 Hitachi Ltd アモルフアスシリコン膜の形成方法
JPH0714072B2 (ja) * 1985-12-19 1995-02-15 三井東圧化学株式会社 光電変換素子の製造方法
DE3742110C2 (de) * 1986-12-12 1996-02-22 Canon Kk Verfahren zur Bildung funktioneller aufgedampfter Filme durch ein chemisches Mikrowellen-Plasma-Aufdampfverfahren
US4816082A (en) * 1987-08-19 1989-03-28 Energy Conversion Devices, Inc. Thin film solar cell including a spatially modulated intrinsic layer
JP2616929B2 (ja) * 1987-08-22 1997-06-04 株式会社日本自動車部品総合研究所 微結晶炭化ケイ素半導体膜の製造方法
JPH0192375A (ja) * 1987-10-05 1989-04-11 Canon Inc マイクロ波プラズマｃｖｄ法による機能性堆積膜形成装置
US4908330A (en) * 1988-02-01 1990-03-13 Canon Kabushiki Kaisha Process for the formation of a functional deposited film containing group IV atoms or silicon atoms and group IV atoms by microwave plasma chemical vapor deposition process
US4971832A (en) * 1988-03-02 1990-11-20 Canon Kabushiki Kaisha HR-CVD process for the formation of a functional deposited film on a substrate with application of a voltage in the range of -5 to -100 V
US5129359A (en) * 1988-11-15 1992-07-14 Canon Kabushiki Kaisha Microwave plasma CVD apparatus for the formation of functional deposited film with discharge space provided with gas feed device capable of applying bias voltage between the gas feed device and substrate
JPH02141578A (ja) * 1988-11-24 1990-05-30 Canon Inc 堆積膜形成装置
JPH02148715A (ja) * 1988-11-29 1990-06-07 Canon Inc 半導体デバイスの連続形成装置
US5114770A (en) * 1989-06-28 1992-05-19 Canon Kabushiki Kaisha Method for continuously forming functional deposited films with a large area by a microwave plasma cvd method
US5130170A (en) * 1989-06-28 1992-07-14 Canon Kabushiki Kaisha Microwave pcvd method for continuously forming a large area functional deposited film using a curved moving substrate web with microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation
JPH0349217A (ja) * 1989-07-18 1991-03-04 Fuji Electric Co Ltd 半導体基体用プラズマドーピング装置
US5104455A (en) * 1990-01-09 1992-04-14 Sharp Kabushiki Kaisha Amorphous semiconductor solar cell

Also Published As

Publication number Publication date
EP0616729A4 (en) 1994-11-30
WO1993012546A1 (en) 1993-06-24
EP0616729A1 (en) 1994-09-28
US5204272A (en) 1993-04-20
EP0616729B1 (en) 1996-09-11
DE69213759T2 (de) 1997-02-20
AU3223193A (en) 1993-07-19
DE69213759D1 (de) 1996-10-17

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