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EP3931958A1 - Cellule de conversion à court-circuit - Google Patents

Cellule de conversion à court-circuit

Info

Publication number
EP3931958A1
EP3931958A1 EP19708294.4A EP19708294A EP3931958A1 EP 3931958 A1 EP3931958 A1 EP 3931958A1 EP 19708294 A EP19708294 A EP 19708294A EP 3931958 A1 EP3931958 A1 EP 3931958A1
Authority
EP
European Patent Office
Prior art keywords
crowbar
cell
switch
converter
leg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP19708294.4A
Other languages
German (de)
English (en)
Inventor
Aravind MOHANAVEERAMANI
Jan Svensson
Alireza NAMI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Energy Ltd
Original Assignee
ABB Power Grids Switzerland AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ABB Power Grids Switzerland AG filed Critical ABB Power Grids Switzerland AG
Publication of EP3931958A1 publication Critical patent/EP3931958A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H02M7/4835—Converters with outputs that each can have more than two voltages levels comprising two or more cells, each including a switchable capacitor, the capacitors having a nominal charge voltage which corresponds to a given fraction of the input voltage, and the capacitors being selectively connected in series to determine the instantaneous output voltage
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/322—Means for rapidly discharging a capacitor of the converter for protecting electrical components or for preventing electrical shock
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/325—Means for protecting converters other than automatic disconnection with means for allowing continuous operation despite a fault, i.e. fault tolerant converters

Definitions

  • the present disclosure relates to a converter cell of a Modular Multilevel Chain-Link Converter (MMC). BACKGROUND
  • MMCs have become a popular choice for the grid connected converters due to enhanced modularity, scalability and harmonic performance with reduced losses.
  • Development towards cell level protection concepts has been a focus lately.
  • HB half-bridge
  • FB full-bridge
  • the cell capacitor is short-circuited via a leg of semiconductor switches, leading to discharge of cell capacitor energy into the switches with very large currents, e.g. in the range of 500 kA to 1 MA for Static
  • the large cell capacitor energy discharging into the switches may lead to either explosion, e.g. in case of industrial switch modules (for instance Insulated-Gate Bipolar Transistor (IGBT)) using bond wires, or need for more expensive Presspack switches (for instance Integrated Gate- Commutated Thyristor (IGCT), Bi-Mode Insulated Gate Transistor (BiGT), Thyristor, StackPak IGBT or Injection-Enhanced Gate Transistor (IEGT)) with hermetic sealing to handle such energies.
  • industrial switch modules for instance Insulated-Gate Bipolar Transistor (IGBT)
  • Presspack switches for instance Integrated Gate- Commutated Thyristor (IGCT), Bi-Mode Insulated Gate Transistor (BiGT), Thyristor, StackPak IGBT or Injection-Enhanced Gate Transistor (IEGT)
  • the thyristor may be designed such that most of the capacitor energy is discharged via the thyristor rather than via the switches.
  • the thyristor can fail short and remains at low impedance for a long time duration (e.g. >i year), typically until the next service stop.
  • switches are e.g. IGCT
  • IGCT since it is a property of the IGCT to fail short while the diodes remain healthy, a stable cell output bypass through the diode bridge and failed thyristor may be obtained. Both of the problems mentioned above have been addressed by introducing the DC crowbar thyristor in the MMC cell.
  • Figure la illustrates a converter cell during normal operation, while figure lb illustrates when the DC crowbar thyristor is activated and goes into short circuit, whereby the cell is bypassed through the diodes.
  • a converter cell for a power converter comprises a plurality of semiconductor devices forming a half-bridge or full-bridge topology in the cell with at least one switch leg comprising a plurality of the semiconductor devices connected in series, each semiconductor device comprising a one-directional switch and an anti-parallel diode.
  • the cell also comprises an energy storage connected across the at least one switch leg.
  • the cell also comprises a crowbar leg connected across the at least one switch leg.
  • the crowbar leg comprises a one-directional first semiconductor crowbar switch arranged to short-circuit the energy storage when the crowbar switch is switched to conducting, and a one-directional reverse semiconductor crowbar device connected across the first crowbar switch and antiparallel to said first crowbar switch.
  • a power converter comprising a plurality of series connected converter cells of the present disclosure.
  • the one-directional reverse semiconductor crowbar device e.g. a reverse-blocking semiconductor device such as a diode or an arrangement comprising at least one diode
  • the current during a negative half cycle of resonance during a shoot-through event in a converter cell can at least partly pass through said reverse device, relieving at least some of the strain on the anti-parallel diodes of the semiconductor devices in the cell.
  • the antiparallel diodes remain healthy, allowing the faulty cell to be bypassed via the antiparallel diodes.
  • Fig ta and lb illustrate a converter cell according to prior art.
  • Fig 2 is a schematic circuit diagram of an MMC in double-star topology, in accordance with embodiments of the present invention.
  • Fig 3 is a schematic circuit diagram of a full-bridge converter cell illustrating the DC energy storage discharging path and the DC pole-to-pole fault path in the full-bridge converter cell when the crowbar leg is conducting in respective direction(s), in accordance with embodiments of the present invention.
  • Fig 4a is a schematic circuit diagram of a half-bridge converter cell with a divided crowbar, in accordance with embodiments of the present invention.
  • Fig 4b is a schematic circuit diagram illustrating the AC bypass path in the half-bridge converter cell of figure 4a when the crowbar leg is conducting, in accordance with embodiments of the present invention.
  • Fig 5 is a schematic circuit diagram of a full-bridge converter cell with a divided crowbar, illustrating the AC bypass path in the full-bridge converter cell when the crowbar leg is conducting, in accordance with embodiments of the present invention.
  • FIG. 2 illustrates power converter 1, here in the form of an MMC having converter arms 3 of series connected (also called chain-link or cascaded) converter cells 4, here an Alternating Current (AC) to Direct Current (DC) converter 1 in double-star topology comprising three phases 2, each having a first converter arm 3a connected to the positive DC terminal DC + and a second converter arm 3b connected to the negative DC terminal DC, each arm shown in series with an arm reactor.
  • AC Alternating Current
  • DC Direct Current
  • MMC or double Wye (-star) converter topology are herein presented as an example.
  • the developed cell protection method is applicable to any converter cell 4 for a power converter 1, e.g. that can be used to build any chain-link topology such as Delta, Wye, double Wye, Modular Matrix converters, etc.
  • the converter 1 is not limited to an AC-DC converter as shown in the figure, but may e.g. be an AC-AC converter or a Static Synchronous
  • Each cell comprises an energy storage 5, e.g. comprising a capacitor, supercapacitor or battery arrangement, and at least one switch leg 6 connected across (i.e. in parallel with) the energy storage 5 and comprising at least two semiconductor devices T.
  • Each semiconductor device T comprises a one-directional switch S and an antiparallel diode D.
  • a HB cell 4 typically comprises a single switch leg 6 having a first semiconductor device Ti and a second semiconductor device T2 in series.
  • a FB cell 4 as in figures 3 typically comprises both a first switch leg 6a and a second switch leg 6b, where the additional second switch leg 6b is connected in parallel with the first switch leg 6a and comprises a first semiconductor device T3 and a second
  • At least a first one-directional crowbar switch (e.g. thyristor) Cl, capable of withstanding the full DC voltage, is connected in a crowbar leg 7 connected in parallel to the cell capacitor 5 (and thus also in parallel with the switch leg 6) with minimal inductance.
  • the DC crowbar thyristor Cl is triggered to turn ON.
  • the at least a first one-directional crowbar switch may comprise a plurality of one-directional crowbar switches, e.g. connected in series.
  • the first crowbar switch is exemplified as a thyristor, but any other suitable one-directional semiconductor switch may be used.
  • the thyristor Cl would conduct most of the cell capacitor energy, relaxing the energy handling requirements of the switch S modules. Thus, an explosion of the bond wire modules may be prevented. Also, the thyristor fails (conduct) into low impedance, long time duration, short circuit mode after conducting such large amounts of energies.
  • the respective antiparallel diodes D conduct in order to bypass the cell at the AC side thereof.
  • the diodes D in switch legs 6 may carry large currents with the activation of the DC crowbar switch Cl during a cell shoot-through fault, reducing the reliability/lifetime of the diodes D after such an event.
  • a one-directional reverse semiconductor crowbar device CR e.g. comprising a diode which is antiparallel to the first crowbar switch Cl is included in the cell.
  • the reverse crowbar device CR is antiparallel to the first crowbar switch implies that it is connected in parallel with the first crowbar switch, and thus connected across the energy storage 5 as well as the switch leg(s) 6, but is arranged to, when conducting, conduct in the opposite direction of the direction in which the first crowbar switch is able to conduct (when switched to conducting).
  • the reverse crowbar device CR is able to handle at least some of the current during a negative half cycle of resonance after a shoot- through fault when the energy storage is short circuited, taking some of the current load from the antiparallel diodes D.
  • the reverse crowbar device CR is herein exemplified as a diode, e.g. a presspack diode, but any other suitable reverse-blocking semiconductor device may alternatively be used.
  • a presspack diode may be added in parallel to the energy storage 5 to reduce the surge current rating of the diodes D in the semiconductor devices T.
  • the current is split between the diodes in the switch legs 6 and the reverse crowbar device CR placed across the energy storage 5.
  • the switch legs 6 each has two diodes D in series whereas only one reverse crowbar device, e.g.
  • CR may be needed across the energy storage, which may result in that most of the current flows through the added reverse crowbar device, which helps to increase the reliability /lifetime of the diodes D after such an event, especially if the semiconductor devices T are bond wire modules.
  • the proposed crowbar arrangement may be combined with a split crowbar comprising at least first and second series connected semiconductor crowbar switches Cl and C2 as shown in figures 4a, 4b and 5 for HB and FB cells 4, respectively.
  • two crowbar switches (thyristors) C, a first thyristor Cl and a second thyristor C2, each capable of withstanding the full DC voltage, are connected in series in the crowbar leg 7 connected antiparallel to the reverse semiconductor crowbar device CR (and thus also in parallel with the switch leg 6 and cell capacitor 5) with minimal inductance.
  • the DC crowbar thyristors C are triggered to turn ON.
  • the thyristors C would conduct most of the cell capacitor energy, relaxing the energy handling requirements of the switch S modules. Thus, an explosion of the bond wire modules may be prevented. Also, the thyristors fail (conduct) into low impedance, long time duration, short circuit mode after conducting such large amounts of energies. Hence, as seen from the illustration of figure 4b, the cell output is bypassed by the conducting second thyristor C2. This does not depend on the diodes D for the cell output bypass. A single gate pulse trigger can be paralleled to all the thyristors since it is not of concern how the thyristors are triggered. It is to be noted that though two series connected thyristors of cell DC voltage rating is required, the energy handling capabilities of each thyristor is reduced to half compared to a single thyristor.
  • a FB cell 4 As seen in figure 5.
  • the semiconductor devices T can be bypassed with regard to the AC conduction path through the cell between the first AC terminal A and the second AC terminal B.
  • the first AC terminal A is connected (typically by direct galvanic connection) to both the a switch leg (here the only switch leg 6 for a HF cell and to the first switch leg 6a for a FB cell), between the first and second semiconductor devices Ti and T2 thereof, and to the crowbar leg 7, between the first and second crowbar switches Cl and C2 thereof.
  • the second AC terminal B is connected (typically by direct galvanic connection) to both the second switch leg 6b, between the first and second semiconductor devices T3 and T4 thereof, and to the crowbar leg 7, between the second and third crowbar switches C2 and C3.
  • the second AC terminal B may be connected in a conventional manner as shown in figures 4.
  • the reverse crowbar device CR comprises a diode.
  • the first crowbar switch Cl comprises a thyristor.
  • each of the switches S of the semiconductor devices T comprises an Insulated-Gate Bipolar Transistor (IGBT), Bi-Mode Insulated Gate Transistor (BiGT), or an Integrated Gate- Commutated Thyristor (IGCT), preferably an IGBT which is suitable for some applications.
  • IGBT Insulated-Gate Bipolar Transistor
  • BiGT Bi-Mode Insulated Gate Transistor
  • IGCT Integrated Gate- Commutated Thyristor
  • each of the diodes (D) and switches S of the semiconductor devices T is connected via bond wires.
  • the present invention may be especially useful when bond wires are used, but embodiments of the invention may also be used when bond wires are not used.
  • the reverse crowbar device CR has a presspack configuration.
  • the power converter 1 is an MMC comprising a plurality of series-connected (cascaded or chain-linked) converter cells of the present disclosure.
  • the power converter 1 may have any suitable topology. MMC or double-Star (-Wye) converter topology are herein presented as an example.
  • the developed cell protection method is applicable to any converter cell 4 for a power converter 1, e.g. that can be used to build any chain-link topology such as Delta, Wye, double Wye, Modular Matrix converters, etc.
  • the converter 1 is not limited to an AC-DC converter as shown in the figure, but may e.g. be an AC-AC converter or a Static
  • the MMC is an AC-to-DC converter, e.g. in a double-star topology.
  • STATCOM Synchronous Compensator

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

Cellule de conversion (4) pour un convertisseur de puissance. La cellule comprend une pluralité de dispositifs à semi-conducteur (T) formant une topologie en demi-pont ou en pont complet dans la cellule. La cellule comprend également un stockage d'énergie (5) connecté d'un bout à l'autre d'au moins une branche de commutation (6). La cellule comprend également une branche de court-circuit (7) connectée d'un bout à l'autre de la ou des branches de commutation. La branche de court-circuit comprend un premier commutateur de court-circuit à semi-conducteur unidirectionnel (C1) conçu pour court-circuiter le stockage d'énergie lorsque le commutateur de court-circuit est commuté pour conduire, et un dispositif de court-circuit à semi-conducteur inverse unidirectionnel (CR) connecté d'un bout à l'autre du premier commutateur de court-circuit, antiparallèle audit premier commutateur de court-circuit.
EP19708294.4A 2019-02-28 2019-02-28 Cellule de conversion à court-circuit Withdrawn EP3931958A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2019/054927 WO2020173567A1 (fr) 2019-02-28 2019-02-28 Cellule de conversion à court-circuit

Publications (1)

Publication Number Publication Date
EP3931958A1 true EP3931958A1 (fr) 2022-01-05

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EP19708294.4A Withdrawn EP3931958A1 (fr) 2019-02-28 2019-02-28 Cellule de conversion à court-circuit

Country Status (2)

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EP (1) EP3931958A1 (fr)
WO (1) WO2020173567A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4040659A1 (fr) * 2021-02-09 2022-08-10 General Electric Technology GmbH Ensemble électrique

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102801295B (zh) * 2012-08-09 2015-01-28 株洲变流技术国家工程研究中心有限公司 一种模块化多电平换流器的子模块故障保护电路及方法
US20170033708A1 (en) * 2014-01-27 2017-02-02 Qatar Foundation For Education, Science And Community Development Dc side fault isolator for high voltage dc convertors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3434126A1 (de) * 1984-09-18 1986-03-27 Brown, Boveri & Cie Ag, 6800 Mannheim Gleichstromstellerschaltung fuer fahrzeugantriebe mit elektrischer netz-widerstandsbremse
DE10323220B4 (de) * 2003-05-22 2014-07-17 Siemens Aktiengesellschaft Kurzschluss-Schaltung für einen Teilumrichter
EP3001552A1 (fr) * 2014-09-23 2016-03-30 Alstom Technology Ltd Convertisseur de source de tension et commande de celui-ci
EP3485565B1 (fr) * 2016-09-05 2020-05-27 Siemens Aktiengesellschaft Procédé de décharge d'un accumulateur d'énergie électrique

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102801295B (zh) * 2012-08-09 2015-01-28 株洲变流技术国家工程研究中心有限公司 一种模块化多电平换流器的子模块故障保护电路及方法
US20170033708A1 (en) * 2014-01-27 2017-02-02 Qatar Foundation For Education, Science And Community Development Dc side fault isolator for high voltage dc convertors

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2020173567A1 *

Also Published As

Publication number Publication date
WO2020173567A1 (fr) 2020-09-03

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