EP3809466A4 - Solid-state imaging element, solid-state imaging device, electronic instrument, and method for manufacturing solid-state imaging element - Google Patents
Solid-state imaging element, solid-state imaging device, electronic instrument, and method for manufacturing solid-state imaging element Download PDFInfo
- Publication number
- EP3809466A4 EP3809466A4 EP19819237.9A EP19819237A EP3809466A4 EP 3809466 A4 EP3809466 A4 EP 3809466A4 EP 19819237 A EP19819237 A EP 19819237A EP 3809466 A4 EP3809466 A4 EP 3809466A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- state imaging
- solid
- imaging element
- electronic instrument
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003384 imaging method Methods 0.000 title 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14638—Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018114469 | 2018-06-15 | ||
PCT/JP2019/023068 WO2019240121A1 (en) | 2018-06-15 | 2019-06-11 | Solid-state imaging element, solid-state imaging device, electronic instrument, and method for manufacturing solid-state imaging element |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3809466A1 EP3809466A1 (en) | 2021-04-21 |
EP3809466A4 true EP3809466A4 (en) | 2021-07-28 |
Family
ID=68841970
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP19819237.9A Pending EP3809466A4 (en) | 2018-06-15 | 2019-06-11 | Solid-state imaging element, solid-state imaging device, electronic instrument, and method for manufacturing solid-state imaging element |
Country Status (6)
Country | Link |
---|---|
US (2) | US11974444B2 (en) |
EP (1) | EP3809466A4 (en) |
JP (2) | JP7420713B2 (en) |
CN (1) | CN112088430B (en) |
TW (1) | TWI846699B (en) |
WO (1) | WO2019240121A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US12009379B2 (en) * | 2017-05-01 | 2024-06-11 | Visera Technologies Company Limited | Image sensor |
CN114556574A (en) * | 2019-11-20 | 2022-05-27 | 索尼半导体解决方案公司 | Solid-state imaging device and method for manufacturing solid-state imaging device |
JP2022049487A (en) * | 2020-09-16 | 2022-03-29 | ソニーグループ株式会社 | Solid-state imaging device and electronic apparatus |
US20220223643A1 (en) * | 2021-01-14 | 2022-07-14 | Imec Vzw | Image sensor comprising stacked photo-sensitive devices |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050230775A1 (en) * | 2004-03-18 | 2005-10-20 | Fuji Photo Film Co., Ltd. | Photoelectric converting film stack type solid-state image pickup device and method of producing the same |
US20070120045A1 (en) * | 2005-08-31 | 2007-05-31 | Fuji Photo Film Co., Ltd. | Organic photoelectric conversion device and stack type photoelectric conversion device |
JP2016058559A (en) * | 2014-09-10 | 2016-04-21 | ソニー株式会社 | Solid state image pickup device, driving method of the same, and electronic apparatus |
WO2018096980A2 (en) * | 2016-11-22 | 2018-05-31 | Sony Corporation | Imaging element, stacked-type imaging element and solid-state imaging apparatus |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4255527B2 (en) * | 1997-10-20 | 2009-04-15 | 株式会社半導体エネルギー研究所 | Semiconductor device |
JP2005268479A (en) | 2004-03-18 | 2005-09-29 | Fuji Film Microdevices Co Ltd | Photoelectric converting film laminated solid state imaging apparatus |
JP2005353626A (en) * | 2004-06-08 | 2005-12-22 | Fuji Photo Film Co Ltd | Photoelectric conversion film laminated solid state imaging element and its manufacturing method |
JP2006269922A (en) | 2005-03-25 | 2006-10-05 | Fuji Photo Film Co Ltd | Single plate color solid-state image sensor |
JP5101925B2 (en) | 2007-05-18 | 2012-12-19 | オリンパス株式会社 | Photoelectric conversion film stack type solid-state imaging device |
TW200919758A (en) * | 2007-10-22 | 2009-05-01 | Univ Nat Taiwan | An organic light emitting diode display device with energy-recycling capability |
US8502212B2 (en) * | 2009-03-05 | 2013-08-06 | Koninklijke Philips N.V. | Organic light emitting diode segment |
JP2013055252A (en) | 2011-09-05 | 2013-03-21 | Sony Corp | Solid state image sensor and manufacturing method therefor, and electronic apparatus |
US9601547B2 (en) | 2012-08-14 | 2017-03-21 | Sony Corporation | Solid-state image pickup device and electronic apparatus |
JP6135109B2 (en) | 2012-12-07 | 2017-05-31 | ソニー株式会社 | Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic apparatus |
JP6317548B2 (en) * | 2013-04-10 | 2018-04-25 | キヤノン株式会社 | Imaging apparatus and control method thereof |
JP6711573B2 (en) * | 2015-08-10 | 2020-06-17 | ソニーセミコンダクタソリューションズ株式会社 | Solid-state image sensor |
JP2017098513A (en) | 2015-11-27 | 2017-06-01 | 株式会社ニコン | Imaging device, imaging apparatus, and focusing apparatus |
JP6780421B2 (en) * | 2016-03-01 | 2020-11-04 | ソニー株式会社 | Image sensor, stacked image sensor, solid-state image sensor, and driving method of solid-state image sensor |
JP6740666B2 (en) * | 2016-03-30 | 2020-08-19 | リコーイメージング株式会社 | Imaging device, focus detection device, and imaging device |
JP7027175B2 (en) * | 2018-01-16 | 2022-03-01 | キヤノン株式会社 | Semiconductor devices and equipment |
-
2019
- 2019-06-05 TW TW108119437A patent/TWI846699B/en active
- 2019-06-11 JP JP2020525583A patent/JP7420713B2/en active Active
- 2019-06-11 US US16/973,272 patent/US11974444B2/en active Active
- 2019-06-11 CN CN201980029961.6A patent/CN112088430B/en active Active
- 2019-06-11 WO PCT/JP2019/023068 patent/WO2019240121A1/en active Application Filing
- 2019-06-11 EP EP19819237.9A patent/EP3809466A4/en active Pending
-
2024
- 2024-01-11 JP JP2024002223A patent/JP2024045201A/en active Pending
- 2024-04-09 US US18/630,800 patent/US20240260285A1/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050230775A1 (en) * | 2004-03-18 | 2005-10-20 | Fuji Photo Film Co., Ltd. | Photoelectric converting film stack type solid-state image pickup device and method of producing the same |
US20070120045A1 (en) * | 2005-08-31 | 2007-05-31 | Fuji Photo Film Co., Ltd. | Organic photoelectric conversion device and stack type photoelectric conversion device |
JP2016058559A (en) * | 2014-09-10 | 2016-04-21 | ソニー株式会社 | Solid state image pickup device, driving method of the same, and electronic apparatus |
WO2018096980A2 (en) * | 2016-11-22 | 2018-05-31 | Sony Corporation | Imaging element, stacked-type imaging element and solid-state imaging apparatus |
Non-Patent Citations (1)
Title |
---|
See also references of WO2019240121A1 * |
Also Published As
Publication number | Publication date |
---|---|
CN112088430B (en) | 2024-08-16 |
TWI846699B (en) | 2024-07-01 |
JP7420713B2 (en) | 2024-01-23 |
JP2024045201A (en) | 2024-04-02 |
WO2019240121A1 (en) | 2019-12-19 |
US20240260285A1 (en) | 2024-08-01 |
TW202018927A (en) | 2020-05-16 |
CN112088430A (en) | 2020-12-15 |
US20210249474A1 (en) | 2021-08-12 |
JPWO2019240121A1 (en) | 2021-07-08 |
EP3809466A1 (en) | 2021-04-21 |
US11974444B2 (en) | 2024-04-30 |
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Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
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17P | Request for examination filed |
Effective date: 20201112 |
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AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
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AX | Request for extension of the european patent |
Extension state: BA ME |
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A4 | Supplementary search report drawn up and despatched |
Effective date: 20210628 |
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RAP3 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: SONY SEMICONDUCTOR SOLUTIONS CORPORATION Owner name: SONY GROUP CORPORATION |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H04N 5/369 20110101ALI20210622BHEP Ipc: H01L 27/30 20060101ALI20210622BHEP Ipc: H01L 27/146 20060101AFI20210622BHEP |
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DAV | Request for validation of the european patent (deleted) | ||
DAX | Request for extension of the european patent (deleted) | ||
STAA | Information on the status of an ep patent application or granted ep patent |
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17Q | First examination report despatched |
Effective date: 20240405 |