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EP3809466A4 - Solid-state imaging element, solid-state imaging device, electronic instrument, and method for manufacturing solid-state imaging element - Google Patents

Solid-state imaging element, solid-state imaging device, electronic instrument, and method for manufacturing solid-state imaging element Download PDF

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Publication number
EP3809466A4
EP3809466A4 EP19819237.9A EP19819237A EP3809466A4 EP 3809466 A4 EP3809466 A4 EP 3809466A4 EP 19819237 A EP19819237 A EP 19819237A EP 3809466 A4 EP3809466 A4 EP 3809466A4
Authority
EP
European Patent Office
Prior art keywords
state imaging
solid
imaging element
electronic instrument
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19819237.9A
Other languages
German (de)
French (fr)
Other versions
EP3809466A1 (en
Inventor
Hideaki Togashi
Iwao Yagi
Masahiro Joei
Fumihiko Koga
Kenichi Murata
Shintarou Hirata
Yosuke Saito
Akira Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Sony Group Corp
Original Assignee
Sony Semiconductor Solutions Corp
Sony Group Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp, Sony Group Corp filed Critical Sony Semiconductor Solutions Corp
Publication of EP3809466A1 publication Critical patent/EP3809466A1/en
Publication of EP3809466A4 publication Critical patent/EP3809466A4/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30Devices controlled by radiation
    • H10K39/32Organic image sensors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14609Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14634Assemblies, i.e. Hybrid structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14636Interconnect structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14638Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14665Imagers using a photoconductor layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • H01L27/14623Optical shielding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1464Back illuminated imager structures

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
EP19819237.9A 2018-06-15 2019-06-11 Solid-state imaging element, solid-state imaging device, electronic instrument, and method for manufacturing solid-state imaging element Pending EP3809466A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018114469 2018-06-15
PCT/JP2019/023068 WO2019240121A1 (en) 2018-06-15 2019-06-11 Solid-state imaging element, solid-state imaging device, electronic instrument, and method for manufacturing solid-state imaging element

Publications (2)

Publication Number Publication Date
EP3809466A1 EP3809466A1 (en) 2021-04-21
EP3809466A4 true EP3809466A4 (en) 2021-07-28

Family

ID=68841970

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19819237.9A Pending EP3809466A4 (en) 2018-06-15 2019-06-11 Solid-state imaging element, solid-state imaging device, electronic instrument, and method for manufacturing solid-state imaging element

Country Status (6)

Country Link
US (2) US11974444B2 (en)
EP (1) EP3809466A4 (en)
JP (2) JP7420713B2 (en)
CN (1) CN112088430B (en)
TW (1) TWI846699B (en)
WO (1) WO2019240121A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12009379B2 (en) * 2017-05-01 2024-06-11 Visera Technologies Company Limited Image sensor
CN114556574A (en) * 2019-11-20 2022-05-27 索尼半导体解决方案公司 Solid-state imaging device and method for manufacturing solid-state imaging device
JP2022049487A (en) * 2020-09-16 2022-03-29 ソニーグループ株式会社 Solid-state imaging device and electronic apparatus
US20220223643A1 (en) * 2021-01-14 2022-07-14 Imec Vzw Image sensor comprising stacked photo-sensitive devices

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050230775A1 (en) * 2004-03-18 2005-10-20 Fuji Photo Film Co., Ltd. Photoelectric converting film stack type solid-state image pickup device and method of producing the same
US20070120045A1 (en) * 2005-08-31 2007-05-31 Fuji Photo Film Co., Ltd. Organic photoelectric conversion device and stack type photoelectric conversion device
JP2016058559A (en) * 2014-09-10 2016-04-21 ソニー株式会社 Solid state image pickup device, driving method of the same, and electronic apparatus
WO2018096980A2 (en) * 2016-11-22 2018-05-31 Sony Corporation Imaging element, stacked-type imaging element and solid-state imaging apparatus

Family Cites Families (16)

* Cited by examiner, † Cited by third party
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JP4255527B2 (en) * 1997-10-20 2009-04-15 株式会社半導体エネルギー研究所 Semiconductor device
JP2005268479A (en) 2004-03-18 2005-09-29 Fuji Film Microdevices Co Ltd Photoelectric converting film laminated solid state imaging apparatus
JP2005353626A (en) * 2004-06-08 2005-12-22 Fuji Photo Film Co Ltd Photoelectric conversion film laminated solid state imaging element and its manufacturing method
JP2006269922A (en) 2005-03-25 2006-10-05 Fuji Photo Film Co Ltd Single plate color solid-state image sensor
JP5101925B2 (en) 2007-05-18 2012-12-19 オリンパス株式会社 Photoelectric conversion film stack type solid-state imaging device
TW200919758A (en) * 2007-10-22 2009-05-01 Univ Nat Taiwan An organic light emitting diode display device with energy-recycling capability
US8502212B2 (en) * 2009-03-05 2013-08-06 Koninklijke Philips N.V. Organic light emitting diode segment
JP2013055252A (en) 2011-09-05 2013-03-21 Sony Corp Solid state image sensor and manufacturing method therefor, and electronic apparatus
US9601547B2 (en) 2012-08-14 2017-03-21 Sony Corporation Solid-state image pickup device and electronic apparatus
JP6135109B2 (en) 2012-12-07 2017-05-31 ソニー株式会社 Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic apparatus
JP6317548B2 (en) * 2013-04-10 2018-04-25 キヤノン株式会社 Imaging apparatus and control method thereof
JP6711573B2 (en) * 2015-08-10 2020-06-17 ソニーセミコンダクタソリューションズ株式会社 Solid-state image sensor
JP2017098513A (en) 2015-11-27 2017-06-01 株式会社ニコン Imaging device, imaging apparatus, and focusing apparatus
JP6780421B2 (en) * 2016-03-01 2020-11-04 ソニー株式会社 Image sensor, stacked image sensor, solid-state image sensor, and driving method of solid-state image sensor
JP6740666B2 (en) * 2016-03-30 2020-08-19 リコーイメージング株式会社 Imaging device, focus detection device, and imaging device
JP7027175B2 (en) * 2018-01-16 2022-03-01 キヤノン株式会社 Semiconductor devices and equipment

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050230775A1 (en) * 2004-03-18 2005-10-20 Fuji Photo Film Co., Ltd. Photoelectric converting film stack type solid-state image pickup device and method of producing the same
US20070120045A1 (en) * 2005-08-31 2007-05-31 Fuji Photo Film Co., Ltd. Organic photoelectric conversion device and stack type photoelectric conversion device
JP2016058559A (en) * 2014-09-10 2016-04-21 ソニー株式会社 Solid state image pickup device, driving method of the same, and electronic apparatus
WO2018096980A2 (en) * 2016-11-22 2018-05-31 Sony Corporation Imaging element, stacked-type imaging element and solid-state imaging apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2019240121A1 *

Also Published As

Publication number Publication date
CN112088430B (en) 2024-08-16
TWI846699B (en) 2024-07-01
JP7420713B2 (en) 2024-01-23
JP2024045201A (en) 2024-04-02
WO2019240121A1 (en) 2019-12-19
US20240260285A1 (en) 2024-08-01
TW202018927A (en) 2020-05-16
CN112088430A (en) 2020-12-15
US20210249474A1 (en) 2021-08-12
JPWO2019240121A1 (en) 2021-07-08
EP3809466A1 (en) 2021-04-21
US11974444B2 (en) 2024-04-30

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