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EP2907154B1 - Photocathode semi-transparente à taux d'absorption amélioré - Google Patents

Photocathode semi-transparente à taux d'absorption amélioré Download PDF

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Publication number
EP2907154B1
EP2907154B1 EP12773306.1A EP12773306A EP2907154B1 EP 2907154 B1 EP2907154 B1 EP 2907154B1 EP 12773306 A EP12773306 A EP 12773306A EP 2907154 B1 EP2907154 B1 EP 2907154B1
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EP
European Patent Office
Prior art keywords
photocathode
layer
diffraction grating
support layer
photons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
EP12773306.1A
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German (de)
English (en)
French (fr)
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EP2907154A1 (fr
Inventor
Gert NÜTZEL
Pascal Lavoute
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Photonis France SAS
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Photonis France SAS
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Priority to RS20170179A priority Critical patent/RS55724B1/sr
Publication of EP2907154A1 publication Critical patent/EP2907154A1/fr
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
    • H01J40/02—Details
    • H01J40/04—Electrodes
    • H01J40/06—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
    • H01J40/16—Photoelectric discharge tubes not involving the ionisation of a gas having photo- emissive cathode, e.g. alkaline photoelectric cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
    • H01J43/02—Tubes in which one or a few electrodes are secondary-electron emitting electrodes

Definitions

  • the present invention relates to the general field of semi-transparent photocathodes, and more specifically, to that of semi-transparent photocathodes of antimony and alkali metal type, or silver oxide (AgOCs), frequently used in radiation detectors.
  • electromagnetic such as, for example, image intensifier tubes and photomultiplier tubes.
  • Electromagnetic radiation detectors such as, for example, image intensifier tubes and photomultiplier tubes, detect electromagnetic radiation by converting it into a light or electrical output signal.
  • They usually comprise a photocathode for receiving the electromagnetic radiation and in response transmitting a photoelectron flux, an electron multiplier device for receiving said photoelectron flux and in response transmitting a flow of so-called secondary electrons, then an output device for receiving said secondary electron flow and in response transmitting the output signal.
  • such a photocathode 1 usually comprises a transparent support layer 10 and a layer 20 of a photoemissive material deposited on a face 12 of said support layer.
  • the support layer 10 comprises a front face 11, said receiving, intended to receive the incident photons, and an opposite rear face 12.
  • the support layer 10 is transparent vis-à-vis the incident photons, and therefore has a transmittance close to the unit.
  • the light emitting layer 20 has an upstream face 21 in contact with the rear face 12 of the support layer 10, and an opposite downstream face 22, called the emission face, from which the generated photoelectrons are emitted.
  • the photons pass through the support layer 10 from the reception face 11, then penetrate into the light emitting layer 20.
  • the electrons generated move to the emission face 22 of the light emitting layer 20 and are emitted in a vacuum.
  • the vacuum is indeed realized inside the detector so that the displacement of the electrons is not disturbed by the presence of gas molecules.
  • the photoelectrons are then directed and accelerated to an electron multiplier device such as a microchannel slab or a set of dynodes.
  • the yield of the photocathode is conventionally defined as the ratio of the number of photoelectrons emitted to the number of incident photons received.
  • the quantum yield is of the order of 15% for a wavelength of 500 nm.
  • the quantum yield depends more precisely on the three main stages, mentioned above, of the phenomenon of photoemission: the absorption of the incident photon and the formation of an electron-hole pair; transporting the generated electron to the emitting face of the light emitting layer; and the emission of the electron in a vacuum.
  • Each of these three steps has a clean performance, the product of the three yields defining the quantum yield of the photocathode.
  • the efficiency ⁇ a of the absorption step is an increasing function of the thickness of the light emitting layer.
  • the thicker the photoemissive layer the greater the ratio of the number of photons absorbed to the number of incident photons. Photons that have not been absorbed are transmitted through the photoemissive layer.
  • the efficiency ⁇ t of the transport phase that is to say the ratio between the electrons reaching the emission face on the electrons generated, is a decreasing function of the thickness of the light emitting layer. The greater the thickness of the layer, the lower the efficiency is. Indeed, the electrons generated will be all the more likely to recombine with holes that the distance to travel is large.
  • the optimum thickness of the light emitting layer is usually between 50 and 200 nm.
  • the figure 2 illustrates, for such a photoemissive layer, the evolution of the absorption rate ⁇ a as a function of the wavelength of the incident photons, as well as the reflection rates ⁇ "of the incident and transmission photons ⁇ 'thereof through the photoemissive layer.
  • one solution may be to increase the thickness of said layer.
  • the increase in the thickness of the light emitting layer although improving the absorption rate, does not lead to an increase in quantum efficiency, especially at long wavelengths, since the transport rate is degraded.
  • the main purpose of the invention is to present a semi-transparent photocathode photon detector comprising a light emitting layer having a high incident photon absorption rate and a preserved electron transport rate.
  • said photocathode comprises a diffraction grating in transmission capable of diffracting said photons, disposed in the support layer and located at said rear face.
  • semi-transparent photocathode means a photocathode whose photoelectrons are emitted from an emission face opposite to the incident photon receiving face. It differs from so-called opaque photocathodes for which electrons are emitted from the photon receiving face.
  • the support layer is said to be transparent insofar as it allows the transmission of incident photons.
  • the transmittance of the support layer, or ratio of the photons transmitted on the received photons, is therefore close to or equal to unity.
  • the incident photons penetrate into the support layer through the so-called reception front surface and pass through it to the opposite rear face.
  • angles of incidence, diffraction and refraction of photons are measured relative to the normal to the considered face.
  • the angles of incidence and diffraction mentioned above are defined with respect to the normal to the rear face of the support layer at which the diffraction grating is arranged.
  • the average apparent thickness for the photons is e .
  • the absorption rate of the light emitting layer is then higher than that of the photocathode according to the prior art mentioned above, insofar as it is an increasing function of the thickness, here of the apparent thickness, of the layer. emitting.
  • the transport rate is then preserved insofar as it does not depend on the apparent thickness of the light emitting layer seen by the photons, but the actual thickness of it. Indeed, when the photons generate electron-hole pairs, the electrons generated move to the emission face regardless of the propagation direction of the photons.
  • the photocathode according to the invention has a high rate of photon absorption and a preserved electron transport rate.
  • Said diffraction grating is advantageously etched in the rear face of the support layer.
  • Said diffraction grating is preferably arranged so as to delimit at least part of the rear face of the support layer.
  • Said diffraction grating is preferably formed of a periodic arrangement of patterns filled with a material having an optical index different from the material of the support layer.
  • patterns are meant notches, or notches, or recesses or notches, or scratches having a sinusoidal shape, scale, trapezoidal, made in the support layer.
  • the difference between the optical indices of the material of the diffraction grating present in said patterns on the one hand and the material of the support layer on the other hand is greater than or equal to 0.2.
  • the pitch of the grating and / or the material of the diffraction grating are chosen so that the photons are diffracted in the photoemissive layer with a diffraction angle strictly greater than arcsine (1 / n p ).
  • the photocathode comprises at least one additional diffraction grating capable of diffracting said photons, located in the support layer and disposed close to said first diffraction grating, formed of a periodic arrangement of patterns filled with a material having an optical index different from the material of the support layer.
  • the diffraction gratings are oriented in distinct directions, and spaced from each other by a negligible distance from the average thickness of the support layer. This distance is approximately one tenth to ten times the wavelength considered.
  • the periodic arrangement of patterns of said at least one additional diffraction grating may be shifted in a direction orthogonal to the thickness direction of the support layer relative to the arrangement of said first diffraction grating.
  • the diffraction grating and the additional diffraction grating are arranged in the same plane.
  • the photoemissive layer may comprise antimony and at least one alkali metal.
  • Such a light emitting layer may be made of a material selected from SbNaKCs, SbNa 2 KCs, SbNaK, SbKCs, SbRbKCs or SbRbCs.
  • the photoemissive layer may be formed of AgOCs.
  • the photoemissive layer preferably has a substantially constant thickness.
  • the photoemissive layer preferably has a thickness of less than or equal to 300 nm.
  • the invention also relates to an optical photon detection system comprising a photocathode according to any one of the preceding features, and an output device for transmitting an output signal in response to the photoelectrons emitted by said photocathode.
  • Such an optical system may be an image intensifier tube or a photomultiplier tube.
  • the figures 3 and 4 illustrate a semi-transparent photocathode 1 according to a first preferred embodiment of the invention.
  • the photocathode 1 according to the invention can equip any type of photon detector, such as, for example, an image intensifier tube or an electron multiplier tube.
  • the function of the photocathode is to receive a stream of incident photons and to emit electrons, called photoelectrons, in response.
  • It comprises a transparent support layer 10, a layer 20 of a light-emitting material and, according to the invention, at least one diffraction grating 30 capable of diffracting the incident photons.
  • the support layer 10 is a layer of a transparent material on which the photoemissive layer 20 is deposited.
  • the transmittance of the support layer 10 is therefore substantially equal to unity.
  • At least one transmission diffraction grating 30 is disposed in the support layer 10 at said rear face 12.
  • the diffraction grating 30 is formed of a periodic arrangement of patterns 31 filled with a material having an optical index different from the material of the support layer 10.
  • patterns are meant indentations, notches, recesses, notches or scratches, having a sinusoidal, scale, trapezoidal or other shape, practiced in the support layer.
  • the difference between the optical indices of the material of the diffraction grating 30 present in said patterns 31 on the one hand and the material of the support layer 10 on the other hand is greater than or equal to 0.2.
  • the diffraction grating 30 is notably characterized by the distance, called grating pitch, between two neighboring patterns 31.
  • the pitch of the network is defined according to the wavelength of the incident photons, so as to be able to diffract them.
  • the diffraction grating 30 may be arranged in the support layer 10 at the rear face 12, thus delimiting at least part of the rear face 12.
  • the diffraction grating may be disposed inside the support layer and located in the immediate vicinity of the rear face, at a negligible distance from it with respect to the thickness of the support layer.
  • the rear face 12 of the support layer 10 is substantially flat. However, it may be curved in the case of a photocathode itself having a defined curvature.
  • the diffraction grating 30 is located in the support layer 10, so that the material filling the patterns 31 of the network does not protrude from said patterns.
  • the material filling the patterns 31 may, in a variant, form a layer between the rear face 12 of the support layer and the light emitting layer 20.
  • the light emitting layer 20 is disposed against the rear face 12 of the support layer 10.
  • the light emitting layer 20 has a substantially constant average thickness, denoted e.
  • the thickness is preferably less than or equal to 300 nm.
  • the light emitting layer 20 is made of a suitable semiconductor material, preferably an alkaline antimony compound.
  • a suitable semiconductor material preferably an alkaline antimony compound.
  • Such an alkaline material may be selected from SbNaKCs, SbNa 2 KCs, SbNaK, SbKCs, SbRbKCs or SbRbCs.
  • the light emitting layer 20 may also be formed of AgOCs silver oxide.
  • the emission face 22 can be treated with hydrogen, cesium or cesium oxide to reduce its electronic affinity.
  • the photoelectrons which reach the downstream face 22 of emission of the photoemissive layer 20 can be extracted naturally and thus be emitted in a vacuum.
  • An electrode (not shown) forming an electron reservoir is in contact with the light emitting layer 20 and is brought to an electric potential.
  • It can be arranged against a lateral face of the light emitting layer 20, so as not to diminish or disrupt the emission of electrons from the downstream face 22 of emission.
  • the electron reservoir allows the recombination of the holes generated by the incident photons.
  • the overall electrical charge of the light emitting layer 20 remains substantially constant.
  • the photoemissive layer 20 is sufficiently thin so that the electrons generated move naturally to the emission face 22.
  • Photons enter the photocathode 1 through the front face 11 of receiving the support layer 10.
  • diffraction grating 30 They are then diffracted by the diffraction grating 30 and transmitted in the light emitting layer 20. They have statistically a diffraction angle substantially greater, in absolute value, at the angle of incidence, the angles of incidence and diffraction are defined. compared to normal at the back 12.
  • e d e ⁇ - ⁇ max + ⁇ ⁇ max + ⁇ F ⁇ d cos d d ⁇ d
  • e is the actual thickness of the layer
  • ⁇ max is the maximum angle of incidence on the network.
  • the apparent average thickness e d of the light emitting layer is substantially greater than its real thickness e, ie the average distance traveled by the photons in the layer is substantially greater than in the interior art. As a result, a higher percentage of the diffracted photons is absorbed.
  • Electrons generated propagate in the photoemissive layer 20 to the downstream face 22 of emission where they are emitted in vacuum.
  • the transport rate of the light emitting layer 20 is substantially equal to that of a photocathode according to the prior art. that is, without a diffraction grating. The transport rate is thus preserved.
  • the photocathode 1 according to the invention thus has a high absorption rate and a transport rate preserved, which leads to optimized quantum efficiency, especially for energies close to the threshold of photoemission.
  • the photocathode 1 according to the invention can be performed as follows.
  • the support layer 10 is made of a suitable transparent material, for example quartz or borosilicate glass.
  • the patterns 31 of the diffraction grating 30 are etched in the support layer 10 at the rear face 12 by known etching techniques, such as, for example, holography and / or ion etching and even etching techniques. by diamond.
  • the patterns 31 are then filled with a diffraction material whose optical index is different from that of the support layer, such as, for example, Al 2 O 3 (n ⁇ 1, 7), TiO 2 (n ⁇ 2, 3-2, 6) or Ta 2 O 5 (n ⁇ 2.2), or even HfO 2 .
  • a diffraction material whose optical index is different from that of the support layer, such as, for example, Al 2 O 3 (n ⁇ 1, 7), TiO 2 (n ⁇ 2, 3-2, 6) or Ta 2 O 5 (n ⁇ 2.2), or even HfO 2 .
  • This material can be deposited by known techniques of physical vapor deposition, such as, for example, sputtering ( sputtering ), evaporation, or EBPVD electron beam vapor deposition ( electron beam physical vapor deposition, in English).
  • physical vapor deposition such as, for example, sputtering ( sputtering ), evaporation, or EBPVD electron beam vapor deposition ( electron beam physical vapor deposition, in English).
  • the known techniques of chemical vapor deposition such as, for example, the atomic layer deposition (ALD) may also be used, as well as the so-called hybrid techniques, such as, for example, the reactive sputtering and ion beam assisted deposition (IBAD).
  • IBAD reactive sputtering and ion beam assisted deposition
  • the rear face 12 is polished so as to remove any surplus of diffraction material projecting from the patterns 31 of the diffraction grating 30.
  • the rear face is polished without being flush with the rear face.
  • a uniform layer of diffraction material remains present on the rear face 22, in continuity with the patterns.
  • a thin diffusion barrier may then be deposited to prevent any migration / chemical interaction between the material of the light emitting layer and the material of the diffraction grating.
  • the thickness of the diffusion barrier is chosen sufficiently thin (less than ⁇ / 4 and preferably of the order of ⁇ / 10).
  • the photoemissive layer 20 is then deposited by one of the deposition techniques mentioned above.
  • a type S25 photocathode 1 may be implemented in the following manner.
  • the support layer 10 is made of quartz.
  • the diffraction grating 30 is etched in the support layer 10 at the rear face 12 in the form of a periodic arrangement of grooves 31 parallel to each other.
  • the grooves 31 have a width of 341 nm and a depth of 362 nm.
  • the pitch of the grating that is to say the distance separating two adjacent and parallel grooves 31, is 795 nm.
  • the grooves 31 are filled for example with TiO 2 , whose optical index is between 2.3 and 2.6.
  • TiO 2 can be deposited by the known Atomic Layer Deposition (ALD) technique.
  • ALD Atomic Layer Deposition
  • a step of polishing the rear face 12 is performed to remove any surplus of diffraction material projecting from the grooves 31.
  • the rear face 12 is substantially flat, and delimited in part by the material (quartz) of the support layer 10 and partly by the material (TiO 2 ) for diffraction of the grooves 31 of the diffraction grating 30.
  • the photoemissive layer 20 is finally made of SbNaK or SbNa 2 KCs and is deposited on the rear face 12 of the support layer 10 so as to have a thickness of 50 to 240 nm substantially constant.
  • the figure 5 illustrates the evolution of the quantum efficiency as a function of the wavelength of the incident photons, for such a photocathode on the one hand and for a photocathode according to the example of the prior art previously described on the other hand.
  • the quantum yield of the photocathode according to the invention is of the order of 18% whereas it is of the order of 10% in the case of a photocathode without a diffraction grating, which gives an improvement of nearly 80% in quantum efficiency.
  • the figure 6 illustrates a photocathode according to a second embodiment of the invention.
  • the diffraction grating 30 is advantageously sized so that the average diffraction angle ⁇ d (taking into account the angular distribution F ( ⁇ d )) is strictly greater than arcsin (1 / n p ) where n p is the optical index of the light emitting layer. More specifically, the pitch p of the grating and / or the optical index of the diffraction material filling the patterns 31 are chosen so that the average diffraction angle ⁇ d is strictly greater than arcsin (1 / n p ).
  • the quantum yield of the photocathode is therefore further improved, in particular for photons of energy close to the photoemission threshold.
  • the figure 7 illustrates a photocathode, seen from above, according to a third embodiment of the invention, in which two diffraction gratings 30, 40 are present in the support layer 10 at the rear face 12.
  • the photocathode differs from the first preferred embodiment only in the presence of an additional diffraction grating 40 in the support layer 10.
  • This additional network 40 is disposed near the first diffraction grating 30, upstream thereof according to the direction of propagation of the photons.
  • These two networks 30, 40 are oriented in distinct directions, preferably orthogonal, and are spaced from each other by a negligible distance from the thickness of the support layer, for example from a distance of the order of ⁇ / 10 to 10 ⁇ .
  • the additional network 40 is not the same as the first diffraction grating 30 previously described.
  • the first diffraction grating and the additional grating are made in the same plane in a two-dimensional pattern whose transmission function is the product of the respective transmission functions of the first network and the additional network.
  • the two-dimensional pattern can be obtained by holographic techniques.
  • the angular distribution is more spread out than in the first embodiment and the apparent thickness of the light emitting layer 20 for photons is more important, which improves the absorption rate.
  • this embodiment is not limited to two diffraction gratings. A greater number of diffraction gratings of different directions may be present in the backing layer at the back.
  • the photocathode described above can be integrated into an optical photon detection system.
  • an optical system comprises an output device adapted to convert the photoelectrons into an electrical signal.
  • This output device may comprise a CCD matrix, the optical system being known by the acronym EB-CCD (Electron Bombarded CCD).
  • the output device may comprise a CMOS matrix on thinned and passivated substrate, the optical system then being known by the acronym EBCMOS (Electron Bombarded CMOS).

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EP12773306.1A 2012-10-12 2012-10-12 Photocathode semi-transparente à taux d'absorption amélioré Active EP2907154B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RS20170179A RS55724B1 (sr) 2012-10-12 2012-10-12 Poluprovidna fotokatoda sa poboljšanim stepenom apsorpcije

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2012/070313 WO2014056550A1 (fr) 2012-10-12 2012-10-12 Photocathode semi-transparente à taux d'absorption amélioré

Publications (2)

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EP2907154A1 EP2907154A1 (fr) 2015-08-19
EP2907154B1 true EP2907154B1 (fr) 2016-11-23

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US (1) US9960004B2 (ru)
EP (1) EP2907154B1 (ru)
JP (1) JP6224114B2 (ru)
KR (1) KR101926188B1 (ru)
CN (1) CN104781903B (ru)
AU (1) AU2012391961B2 (ru)
BR (1) BR112015007210B1 (ru)
CA (1) CA2887442C (ru)
IL (1) IL237874B (ru)
PL (1) PL2907154T3 (ru)
RS (1) RS55724B1 (ru)
RU (1) RU2611055C2 (ru)
SG (1) SG11201501814QA (ru)
WO (1) WO2014056550A1 (ru)

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US9734977B2 (en) 2015-07-16 2017-08-15 Intevac, Inc. Image intensifier with indexed compliant anode assembly
RU185547U1 (ru) * 2017-02-20 2018-12-14 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Фотокатод для импульсных фотоэлектронных приборов
RU2686063C1 (ru) * 2018-07-02 2019-04-24 Общество с ограниченной ответственностью "Катод" Полупрозрачный фотокатод
CN112908807B (zh) * 2021-01-13 2024-07-02 陕西理工大学 一种光电阴极及其应用

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JPH07321358A (ja) 1994-05-27 1995-12-08 Sanyo Electric Co Ltd 光起電力装置およびその製造方法
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FR2925218B1 (fr) 2007-12-13 2010-03-12 Photonis France Tube intensificateur d'image a encombrement reduit et systeme de vision nocturne equipe d'un tel tube
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FR2961628B1 (fr) 2010-06-18 2012-08-31 Photonis France Détecteur a multiplicateur d'électrons forme d'une couche de nanodiamant hautement dope.
CN102136519A (zh) * 2010-11-26 2011-07-27 中国科学院上海技术物理研究所 量子阱长波红外探测器光栅波导微腔的光耦合单元
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Publication number Publication date
BR112015007210A2 (pt) 2017-08-08
KR20150086472A (ko) 2015-07-28
US9960004B2 (en) 2018-05-01
KR101926188B1 (ko) 2018-12-06
CA2887442C (fr) 2019-08-06
CN104781903B (zh) 2017-05-24
RU2611055C2 (ru) 2017-02-21
RU2015113428A (ru) 2016-10-27
WO2014056550A1 (fr) 2014-04-17
RS55724B1 (sr) 2017-07-31
SG11201501814QA (en) 2015-05-28
IL237874B (en) 2020-04-30
PL2907154T3 (pl) 2017-05-31
JP6224114B2 (ja) 2017-11-01
US20150279606A1 (en) 2015-10-01
BR112015007210B1 (pt) 2021-08-03
AU2012391961B2 (en) 2017-12-07
CA2887442A1 (fr) 2014-04-17
EP2907154A1 (fr) 2015-08-19
IL237874A0 (en) 2015-05-31
CN104781903A (zh) 2015-07-15
AU2012391961A1 (en) 2015-04-02
JP2015536522A (ja) 2015-12-21

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