EP2858110A4 - Power semiconductor device - Google Patents
Power semiconductor deviceInfo
- Publication number
- EP2858110A4 EP2858110A4 EP13797797.1A EP13797797A EP2858110A4 EP 2858110 A4 EP2858110 A4 EP 2858110A4 EP 13797797 A EP13797797 A EP 13797797A EP 2858110 A4 EP2858110 A4 EP 2858110A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- semiconductor device
- power semiconductor
- power
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
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- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
-
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
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- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30101—Resistance
-
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- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Inverter Devices (AREA)
- Power Conversion In General (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012125833 | 2012-06-01 | ||
PCT/JP2013/002411 WO2013179547A1 (en) | 2012-06-01 | 2013-04-09 | Power semiconductor device |
Publications (3)
Publication Number | Publication Date |
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EP2858110A1 EP2858110A1 (en) | 2015-04-08 |
EP2858110A4 true EP2858110A4 (en) | 2015-07-29 |
EP2858110B1 EP2858110B1 (en) | 2020-04-08 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP13797797.1A Active EP2858110B1 (en) | 2012-06-01 | 2013-04-09 | Power semiconductor device |
Country Status (5)
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US (1) | US9325257B2 (en) |
EP (1) | EP2858110B1 (en) |
JP (1) | JP5914867B2 (en) |
CN (1) | CN104380462B (en) |
WO (1) | WO2013179547A1 (en) |
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---|---|---|---|---|
JP5939055B2 (en) * | 2012-06-28 | 2016-06-22 | 住友電気工業株式会社 | Semiconductor device and manufacturing method of semiconductor device |
JP2014110555A (en) * | 2012-12-03 | 2014-06-12 | Samsung Electronics Co Ltd | Antenna device |
DE102014219998B4 (en) * | 2014-10-02 | 2020-09-24 | Vitesco Technologies GmbH | Power module, power module group, power output stage and drive system with a power output stage |
WO2016084622A1 (en) * | 2014-11-28 | 2016-06-02 | 富士電機株式会社 | Semiconductor device |
JP6594000B2 (en) | 2015-02-26 | 2019-10-23 | ローム株式会社 | Semiconductor device |
WO2016194033A1 (en) * | 2015-05-29 | 2016-12-08 | 新電元工業株式会社 | Semiconductor device and method for manufacturing same |
JP6582678B2 (en) * | 2015-07-27 | 2019-10-02 | 三菱電機株式会社 | Semiconductor device |
US10103096B2 (en) | 2016-03-11 | 2018-10-16 | Shindengen Electric Manufacturing Co., Ltd. | Semiconductor device |
EP3555914B1 (en) * | 2016-12-16 | 2021-02-03 | ABB Schweiz AG | Power semiconductor module with low gate path inductance |
US11107761B2 (en) | 2018-02-06 | 2021-08-31 | Denso Corporation | Semiconductor device |
JP2019186403A (en) | 2018-04-11 | 2019-10-24 | トヨタ自動車株式会社 | Semiconductor device |
WO2019230292A1 (en) * | 2018-06-01 | 2019-12-05 | 富士電機株式会社 | Semiconductor device |
JP7237475B2 (en) * | 2018-06-19 | 2023-03-13 | 新電元工業株式会社 | Power modules and switching power supplies |
JP7077893B2 (en) | 2018-09-21 | 2022-05-31 | 株式会社デンソー | Semiconductor device |
EP3654373B1 (en) * | 2018-11-19 | 2021-01-06 | Infineon Technologies AG | Multi-chip-package |
EP3690939A1 (en) * | 2019-01-30 | 2020-08-05 | Infineon Technologies AG | Semiconductor arrangements |
US11069640B2 (en) | 2019-06-14 | 2021-07-20 | Cree Fayetteville, Inc. | Package for power electronics |
JP7198168B2 (en) * | 2019-07-19 | 2022-12-28 | 株式会社 日立パワーデバイス | power semiconductor module |
JP6896831B2 (en) * | 2019-12-05 | 2021-06-30 | 三菱電機株式会社 | Semiconductor modules and power converters |
CN113054826A (en) * | 2019-12-26 | 2021-06-29 | 财团法人工业技术研究院 | High-power module |
CN113224025A (en) * | 2020-01-21 | 2021-08-06 | 瑞昱半导体股份有限公司 | Semiconductor assembly |
JP6939932B1 (en) * | 2020-03-12 | 2021-09-22 | 住友電気工業株式会社 | Semiconductor device |
JP7305603B2 (en) * | 2020-09-18 | 2023-07-10 | 株式会社東芝 | semiconductor equipment |
CN114566477A (en) * | 2020-11-27 | 2022-05-31 | 苏州东微半导体股份有限公司 | Semiconductor device with a plurality of semiconductor chips |
JP7531444B2 (en) | 2021-04-01 | 2024-08-09 | 三菱電機株式会社 | Semiconductor Device |
JP7563296B2 (en) | 2021-05-27 | 2024-10-08 | 株式会社デンソー | Semiconductor Device |
JPWO2022255139A1 (en) * | 2021-06-04 | 2022-12-08 | ||
US11973012B2 (en) * | 2021-07-26 | 2024-04-30 | Infineon Technologies Austria Ag | Power module with semiconductor packages mounted on metal frame |
JPWO2023053823A1 (en) * | 2021-09-29 | 2023-04-06 | ||
WO2024048077A1 (en) * | 2022-08-29 | 2024-03-07 | 富士電機株式会社 | Semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004134460A (en) * | 2002-10-08 | 2004-04-30 | Mitsubishi Electric Corp | Semiconductor device |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60132855T2 (en) * | 2000-07-27 | 2009-02-26 | Texas Instruments Inc., Dallas | Contacting structure of an integrated power circuit |
JP4220731B2 (en) | 2002-06-19 | 2009-02-04 | 三菱電機株式会社 | Power semiconductor device |
JP2004273749A (en) | 2003-03-07 | 2004-09-30 | Fuji Electric Fa Components & Systems Co Ltd | Semiconductor power module |
JP2004296998A (en) * | 2003-03-28 | 2004-10-21 | Matsushita Electric Ind Co Ltd | Semiconductor device |
JP2009158830A (en) * | 2007-12-27 | 2009-07-16 | Sanyo Electric Co Ltd | Substrate for mounting element and manufacturing method thereof, semiconductor module and manufacturing method thereof, and portable equipment |
JP5285348B2 (en) * | 2008-07-30 | 2013-09-11 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | Circuit equipment |
US9362205B2 (en) * | 2010-09-24 | 2016-06-07 | Semiconductor Components Industries, Llc | Circuit device |
-
2013
- 2013-04-09 US US14/402,492 patent/US9325257B2/en not_active Expired - Fee Related
- 2013-04-09 EP EP13797797.1A patent/EP2858110B1/en active Active
- 2013-04-09 WO PCT/JP2013/002411 patent/WO2013179547A1/en active Application Filing
- 2013-04-09 CN CN201380028042.XA patent/CN104380462B/en not_active Expired - Fee Related
- 2013-04-09 JP JP2014518239A patent/JP5914867B2/en not_active Expired - Fee Related
Patent Citations (1)
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---|---|---|---|---|
JP2004134460A (en) * | 2002-10-08 | 2004-04-30 | Mitsubishi Electric Corp | Semiconductor device |
Non-Patent Citations (2)
Title |
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COTTET ET AL: "Numerical Comparison of Packaging Technologies for Power Electronics Modules", POWER ELECTRONICS SPECIALISTS CONFERENCE, 2005. PESC '05. IEEE 36TH, IEEE, PISCATAWAY, NJ, USA, 1 January 2005 (2005-01-01), pages 2187 - 2193, XP031000442, ISBN: 978-0-7803-9033-1, DOI: 10.1109/PESC.2005.1581936 * |
See also references of WO2013179547A1 * |
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CN104380462A (en) | 2015-02-25 |
JPWO2013179547A1 (en) | 2016-01-18 |
JP5914867B2 (en) | 2016-05-11 |
CN104380462B (en) | 2017-05-24 |
EP2858110B1 (en) | 2020-04-08 |
WO2013179547A1 (en) | 2013-12-05 |
US20150155797A1 (en) | 2015-06-04 |
US9325257B2 (en) | 2016-04-26 |
EP2858110A1 (en) | 2015-04-08 |
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