EP2517271A1

EP2517271A1 - Light emitting diode assembly, backlighting device and display device

Info

Publication number: EP2517271A1
Application number: EP10795318A
Authority: EP
Inventors: Thorsten Kunz; Stephan Kaiser
Original assignee: Osram Opto Semiconductors GmbH
Current assignee: Ams Osram International GmbH
Priority date: 2009-12-21
Filing date: 2010-12-15
Publication date: 2012-10-31
Also published as: US20120274878A1; CN102714262A; US9214608B2; WO2011085897A1; JP2013515366A; KR20120094525A; DE102010012423A1

Abstract

The invention relates to a light emitting diode assembly (1) having a first light emitting diode chip (2), a second light emitting diode chip (3) and a light emission conversion element (4, 4a, 4b). The first light emitting diode chip (2) is designed to emit blue light. The second light emitting diode chip (3) comprises a semiconductor layer sequence, which is designed to emit green light. The light emission conversion element (4, 4a, 4b) is designed to convert a part of the blue light emitted by the first light emitting diode chip (2) to red light. The light emitting diode assembly (1) is designed to radiate mixed light which comprises blue light from the first light emitting diode chip (2), green light from the second light emitting diode chip (3) and red light from the light emission conversion element (4). The invention also relates to a backlighting device (10) and to a display device.

Description

description

Luminescence diode arrangement, backlighting device and display device

The present application relates to a Lumineszenzdiodenanordnung, a backlighting device and a

Display device.

It is an object of the present disclosure to provide a luminescence diode arrangement for a backlighting device of a display device, with which a large gamut of the display device can be achieved in a cost-effective manner.

In accordance with at least one aspect, a luminescence ^diode arrangement is specified with a first luminescence ^diode chip, a second luminescence ^diode chip, and a luminescence ^conversion element. A "luminescence diode chip" is used in the present context

Optoelectronic semiconductor chip with a for

Radiation generation provided semiconductor layer sequence understood, for example, a light-emitting diode chip or a laser diode chip.

According to at least one further aspect, a rear ^¬ leuchtungsvorrichtung specified with the Lumineszenzdiodenanordnung, which is designed in particular for backlighting a display device. The backlight ^¬ device contains in particular a plurality of

Lumineszenzdiodenanordnungen. The luminescence diode arrangements contained in the backlighting device are in particular identical in construction. According to at least one further aspect, a

Display device indicated with the backlight device. The display device may be a liquid crystal display device (LCD, Liquid Crystal

Display) act like an LCD TV. For example, the backlighting device is designed to backlight a light valve arrangement of the LCD.

In at least one embodiment, the first luminescence diode chip is designed to emit blue light. The second luminescence diode chip is designed in particular for the emission of green light. Preferably, it comprises a semiconductor layer sequence ^¬, the emission of green light

is trained. The luminescence conversion element is in particular for the conversion of a part of the first

Luminescence diode chip emitted blue light formed in red light. Zeckmäßigerweise emits the first

During operation of the luminescence diode arrangement, the second luminescence diode chip emits green light during operation of the luminescence diode arrangement, and the luminescence conversion element emits red light during operation of the luminescence diode arrangement.

The fact that the first luminescence diode chip emits blue light in the present context means in particular that the electromagnetic radiation emitted by the first luminescence diode chip during operation has a dominant wavelength in the blue spectral range, in particular between 420 nm and 490 nm, preferably between 430 nm and 480 nm, wherein the Borders are included. In one embodiment, the dominant wavelength is between 435 nm and 445 nm with the boundaries included, for example, it has a value of 440 nm. In another embodiment for example, between 445 nm and 455 nm, with the limits included, for example, it has a value of 450 nm.

That the semiconductor layer sequence of the second luminescence diode chip ^¬ means emits green light in the present context especially that the light emitted from the semiconductor layer sequence during operation electromagnetic

Radiation a dominant wavelength in the green spectral range ^¬, in particular between 490 nm and 575 nm, preferably ^¬ be between 500 nm and 550 nm, has the limits being included in each case. For example, the

dominant wavelength between 520 nm and 530 nm, with the limits included, for example, it has a value of 525 nm.

As "dominant wavelength" in the present context, in particular the wavelength of that spectral color

understood, which causes the same color impression as the emitted light from the first and second LED chip.

The fact that the luminescence conversion element converts blue light into red light in the present context means in particular that the luminescence conversion element

absorbs primary electromagnetic radiation having a wavelength in the blue spectral range and emits secondary electromagnetic radiation having an intensity maximum with a wavelength in the red spectral range, in particular between 620 nm and 750 nm, preferably between 630 nm and 700 nm, the limits being included. For example, the intensity maximum of the secondary radiation has a wavelength between 650 nm and 750 nm, preferably between 610 nm and 640 nm, with the boundaries each included.

The LED array is at least one

Formed for the emission of mixed light, the blue light of the first LED chip, green light of the second LED chip and red light of the

Contains luminescence conversion element. In particular, the mixed light is composed of blue light of the first luminescence ^¬ diode chip, green light of the second LED chips and red light of the luminescence conversion.

Preferably, the mixed light causes a white color impression. In other words, the mixed light preferably has a color location in the white area of the CIE standard color chart. The CIE standard color chart, also called CIE chart, is used for

Representation of the x and y coordinates of the of

International Lighting Commission (CIE, Commission Internationale de l'Eclairage), developed in 1931, and is well known to those skilled in the art.

For converting the blue light of the first LED chip into red light, the luminescence conversion ^element comprises at least one embodiment

at least one phosphor, for example one

inorganic phosphor such as an aluminum nitride ^¬ fluorescent. The luminescence conversion element can consist of the phosphor or it can be a matrix material

have, in which the phosphor is embedded.

For example, the luminescence conversion element comprises a ceramic material which consists of the luminescent substance or several luminescent substances or at least one Contains phosphor. The luminescence conversion element can also be a, for example electrophoretically deposited, powder layer with one or more phosphors

contain. Alternatively, particles can be at least one

Phosphor in a matrix material, for example a

Epoxy resin or a silicone material, be embedded.

In at least one embodiment, the mixed light emitted by the luminescence diode arrangement during operation has an intensity maximum in the green spectral range. In this embodiment, the luminescence diode arrangement is preferably free of a luminescent substance with a luminescent diode

Intensity maximum in the green spectral range. Specifically, in this embodiment, the luminescence element does not contain a ^¬ phosphor which emits in the operation of the luminescence diode arrangement ^¬ secondary light having an intensity peak in the green spectral range.

In this way, a relation to temperature fluctuations and aging particularly insensitive emission spectrum of the mixed light can be achieved. The life of the

Luminescence diode arrangement to below the

For example, the so-called "L50 / B50" threshold is greater than 20,000 operating hours. The danger of fluctuations of the

Color loci of the mixed light emitted by the light emitting diode array due to temperature changes or

Operating time of the LED array is reduced compared to Lumineszenzkonversionselementen which receive green light emitting phosphors reduced.

The term "L50 / B50" is known in the art in principle. In particular, a "L50 / B50" threshold of over 20,000 operating hours means that of a variety of similar ones Luminescence diode arrangements 50% of the light-emitting diode arrangements a life of at least 20,000

Operating hours and at this time still emits light that is at least 50% of the light intensity and / or

Luminance of the light emitted at 0 operating hours. In another embodiment, the so-called

"L70 / B30" threshold, in which 70% of Lumineszenzdioden ^¬ arrangements still 70% of the initial light intensity and / or

luminance, a value of 5000 hours or more.

The green light emitted by the second LED chip, in one embodiment in the CIE standard color chart, has a color locus whose coordinates [xg, yg] are: xg -S 0.15 and yg> 0.7. Preferably, for the coordinates [xg, yg]: 0 -S x _G <0.15 and 0.7 <y _G <0.9.

Such a color locus is in the CIE standard color chart

advantageously comparatively close to the color loci which match the spectral colors of the green spectral range

assigned. In contrast, have the green light

emitting phosphors, for example orthosilicate phosphors in the CIE standard color chart, color loci which are further removed from the color spectrums of the spectral colors of the green spectral range. Advantageously, they are so opposite

Light emitting diode arrays containing green light phosphors are capable of achieving larger gamut display devices in the light emitting diode array according to the present disclosure.

In the present context, the gamut designates in particular the amount of all the colors which the display device can represent. The gamut corresponds to the CIE diagram limited area, for example, a triangular area. The display device can only reproduce color stimuli that are within this area.

In the display device is in one embodiment by means of the of the Lumineszenzdiodenanordnung or the

Lumineszenzdiodenanordnungen the backlighting device emitted mixed light scores a Gamut whose

Area represented by the CIE standard color chart is at least 100%, preferably at least 110%, particularly preferably at least 120% of the area of the NTSC color space. As NTSC color space is in the

present context that color locus area

understood by a triangle with the coordinates

[0, 67; 0, 33], [0.21, 0.71] and [0.14, 0.08] in the CIE diagram.

In at least one embodiment, the luminescence diode arrangement for emitting the mixed light is one

Front provided. In a development, the first luminescence diode chip is covered at least in places by the luminescence conversion element in a plan view of the front side. The second LED chip can from the

Lumineszenzkonversionselement be uncovered or be at least partially covered by the luminescence conversion element. The luminescence diode arrangement is advantageous

particularly easy to produce, when all LED chips are covered by the luminescence conversion element.

For example, in an embodiment in which the second LED chip at least in places of the

Lumineszenzkonversionselement is covered is that Luminescence conversion element in particular additionally designed to convert part of the electromagnetic radiation emitted by the second LED chip, in particular a part of the green light emitted by the semiconductor layer sequence, into red light.

In at least one embodiment, the luminescence conversion element-in particular by means of a further phosphor-is configured to convert blue light of the first luminescence diode chip and / or green light of the second luminescence diode chip into yellow light. In this way, a particularly high overall efficiency of

Luminescence zenzdiodenanordnung achievable.

In at least one embodiment, the luminescence conversion element is a separately manufactured

Converter plate, which may be formed on the first luminescence diode chip or applied thereto,

educated. In particular, the converter wafer is then on a front-side main surface of the first

Luminescence diode chips applied or formed. In this case, the conversion material is, in particular, not introduced into a potting, with which the luminescence diode chip is potted.

In at least one embodiment, the luminescence conversion element is designed as a separately manufactured cap which, in addition to the front-side main surface of the first luminescence diode chip, can also at least locally cover or cover its side flanks. That is, in this case also side surfaces of the LED chip downstream of the luminescence conversion element. In a capped luminescence conversion element it is In particular, it is possible that a gap is formed between the luminescence diode chip and the luminescence conversion element, which gap can be filled, for example, with air. In this case, the luminescence conversion element is heated less in operation, as if a luminescence conversion element find use with the

Lumineszenzdiodenchip is in direct contact. A

Aging of the luminescence conversion element can be slowed down in this way.

In at least one embodiment, all the luminescence diode chips of the luminescence diode arrangement-and in particular all the luminescence diode chips of the backlighting device-are designed to emit visible and / or ultraviolet light having a dominant wavelength outside the red spectral range. In particular, all luminescence diode chips of the luminescence diode arrangement or of the backlighting device emit visible light with an intensity maximum which has a wavelength outside the red spectral range, in particular in the blue and / or green spectral range. And in particular the LED chips of all luminescence ^¬ diode arrays of backlighting - - In a development all the LED chips Lumineszenzdiodenanordnung based on the same semiconductor material, in particular on a nitride compound semiconductor material such as AlGaInN.

"Based on nitride compound semiconductor material" in the present context means that the luminescence diode chips or at least a part thereof, particularly preferably at least one active zone and / or the growth substrate wafer, a nitride compound semiconductor material, preferably AlGalnN - that is Al _n Ga _m In _] __ _n _ _m N, where 0 ^ n <1, 0 ^ m <1 and n + m <1 - has or consists of this. This material must have a mathematically precise interaction ^¬ reduction according to the above formula is not mandatory. Rather, it may, for example, one or more dopants as well

have additional ingredients. For the sake of simplicity, however, the above formula includes only the essential ones

Components of the crystal lattice (Al, Ga, In, N), even if these can be partially replaced by small amounts of other substances and / or supplemented.

Advantageously, in this way on driver circuits, the different LED chips with different

Supply voltage ranges, be waived. For example, the Lumineszenzdiodenanordnung contains according to the present disclosure preferably no red-emitting LED chips that need to be operated ^¬ voltage range in another operation emitting a blue or green LED chips, based on the connection ^¬ semiconductor material AlInGaN. In this way, the luminescence diode arrangement is easier and can be controlled with a less expensive control unit.

In at least one embodiment, the luminescence diode arrangement and / or the backlighting device has a control unit, which is designed to be the first

Lumineszenzdiodenchip and the second LED chip separately to control each other. For example, the control unit contains a color sensor and / or a temperature sensor.

For example, the control unit for regulating the

Intensity ratio of the blue light emitted by the first luminescence diode chip to the green light emitted by the second light emitting diode chip as a function of measured values of Color or temperature sensor formed. In this way, a temperature-dependent or operating-duration-dependent change in the emission spectrum of the mixed light emitted by the luminescence diode arrangement can advantageously be further reduced or completely compensated.

In one embodiment, the luminescence diode arrangement has an optoelectronic component which comprises the first

Lumineszenzdiodenchip, the second LED chip and the luminescence conversion element comprises. The

Optoelectronic component has, for example, at least two external electrical connections to the electrical

Contacting the first and second LED chip on. In particular, it has a chip carrier and / or a component housing. The first luminescence diode chip, the second luminescence diode chip and the luminescence ^conversion element are preferably arranged on the chip carrier and / or in the component housing. In a further development, the component has a component envelope, with which the first and the second LED chip are preferably encapsulated on the chip carrier and / or in the component housing.

The component envelope contains, for example, a

Radiation-permeable potting compound. In a further development, the radiation-permeable potting compound also encapsulates the luminescence conversion element. With another

Further, the radiation-permeable potting compound is the matrix material in which the phosphor or the

Phosphors of the luminescence conversion element are embedded.

In an alternative embodiment, the luminescence diode arrangement has a first optoelectronic component, which comprises the first luminescence diode chip. In addition, it has a second, separate, optoelectronic component which comprises the second luminescence diode chip.

In this embodiment, in particular either the

Lumineszenzkonversionselement of the first opto ^¬ electronic component comprises or a first part of the

Luminescence conversion element is of the first opto ^¬ electronic component and a second part of the luminescence conversion element of the second optoelectronic

Component comprises. For example, the first luminescence diode chip and the luminescence ^¬

or the first part of the Lumineszenzkonversions ^¬ elements arranged in a reflector trough of the first opto ^¬ electronic component, wherein the reflector trough is formed for example by a recess of a component housing of the first optoelectronic component. The second luminescence diode chip and optionally the second part of the luminescence conversion element are arranged, for example, in a reflector trough of the second optoelectronic component, which in particular is formed by a recess of a

Component housing of the second optoelectronic component is formed.

Further advantages and advantageous embodiments and

Further developments of the Lumineszenzdiodenanordnung, the

Backlight device and the display device will be apparent from the following, in connection with the

Figures illustrated exemplary embodiments.

Show it: Figure 1A, a schematic plan view of a

Luminescence diode arrangement according to a first embodiment,

Figure 1B, a schematic cross section through the

Luminescence diode arrangement of Figure 1A,

Figure 2, a schematic plan view of a

Luminescence diode arrangement according to a second embodiment,

Figure 3A, a schematic plan view of a

Luminescence diode arrangement according to a third embodiment,

Figure 3B, a schematic cross section through the

Luminescence diode arrangement of Figure 3A,

4A, a schematic plan view of a section of a luminescence diode arrangement according to a fourth exemplary embodiment, FIG.

Figure 4B, a schematic cross section through the

Luminescence diode arrangement of Figure 4A,

FIG. 5A, a schematic plan view of a section of a luminescence diode arrangement according to a fifth exemplary embodiment,

Figure 5B, a schematic cross section through the

Luminescence diode arrangement of Figure 5A, FIG. 6 is a schematic plan view of a section of a luminescence diode arrangement according to a sixth exemplary embodiment,

FIG. 7, a schematic plan view of a section of a luminescence diode arrangement according to a seventh exemplary embodiment,

FIG. 8 shows a schematic plan view of a section of a backlighting device according to FIG

Embodiment,

Figure 9, a schematic cross section through a

Display device according to an embodiment,

Figure 10, a CIE diagram with different color spaces and the color loci of the red light and the green

Light of the light emitting diode array according to the first embodiment,

11, the spectral intensity distribution of the of

Luminescence diode arrangement according to the first

Embodiment emitted mixed light,

FIG. 12 shows a CIE diagram with the color space achievable by the display device according to the exemplary embodiment of FIG.

In the embodiments and figures are the same or the same elements with the same reference numerals

Mistake. The figures and the proportions of the elements shown in the figures with each other are not to be considered to scale, unless it is a scale explicitly specified. If no scale is specified, individual

Elements for better presentation and / or for better understanding to be exaggerated.

FIGS. 1A and 1B show a light-emitting diode arrangement according to a first exemplary embodiment. FIG. 1A shows a schematic plan view of a front side 100 of FIG

Lumineszenzdiodenanordnung. FIG. 1B shows a

schematic cross section through the Lumineszenzdiodenanordnung.

The LED array 1 includes a first one

Luminescence diode chip 2 and a second luminescence diode chip 3. The first and the second LED chip 2, 3 are in a recess 50 of a common

Component housing 5 is arranged. The recess 50 may also be referred to as a chip pan. It may, for example, constitute a reflector trough and / or a potting trough.

The first luminescence diode chip 2 and the second luminescence diode chip 3 are both based on the Lumineszenzdiodenanordnung 1 according to the first embodiment

Compound semiconductor material AlInGaN, in particular on the semiconductor material InGaN. By way of example, the luminescence diode chips 2, 3 are light-emitting diode chips which are each provided for emitting radiation from one of their main surfaces.

The first luminescence diode chip 2 has an epitaxial semiconductor layer sequence which is provided for emission of blue light. In particular, the electromagnetic emitted by the semiconductor layer sequence of the first LED chip 2 during operation of the LED array has electromagnetic Radiation a dominant wavelength in the blue

Spectral range, for example at one wavelength

between 430 nm and 480 nm, with the limits included. In the present case, it has a value between 445 and 455 nm, for example of 450 nm. In one variant, it has a value between 435 nm and 445 nm, for example of 440 nm.

The second luminescence diode chip 3 has an epitaxial semiconductor layer sequence which is designed to emit green light, in particular having a dominant wavelength between 490 nm and 575 nm, preferably between 500 nm and 550 nm, the boundaries being included in each case. For example, the dominant wavelength of the green light emitted by the second LED chip 3 has a value of 525 nm.

Furthermore, the luminescence diode arrangement has a luminescence conversion element 4. In the case of the luminescence ^diode arrangement according to the first exemplary embodiment, the luminescence conversion element 4 is applied to the first luminescence ^diode chip 2. For example, it is in the

Lumineszenzkonversionselement 4 to a converter plate, which is formed on the first LED chip 2 or applied to this. In particular, the converter ^¬ plate is applied on a front main surface of the first LED chip 2 or formed. The luminescence conversion element 4 can also be used as a cap

be formed, in addition to the front

Main surface of the first LED chip 2 whose

Side flanks at least partially covered.

The first luminescence diode chip 2 with the luminescence conversion element 4 and the second luminescence diode chip 2 are in one embodiment with a translucent, in particular transparent, potting compound wrapped, which is filled in the recess 50.

The luminescence conversion element 4 is at the first

Embodiment of the potting compound different, which is arranged as a component envelope in the recess 50 to encapsulate the LED chips 2.3. Rather, the luminescence conversion element 4 is in particular integrated with the first luminescence diode chip 2 and is mounted together with the epitaxial semiconductor layer sequence of the first luminescence diode chip 2 in the recess 50 of the component housing 5. Preferably, the upper ^¬ surface of the recess 50 is not limited in the Lumineszenzdiodenanordnung 1 according to the first embodiment to the

4 at the luminescence conversion element or the luminescence conversion element 4 ^¬ limited only with a back, the first LED chip 2 rotating, and in particular narrow edge region of the component housing 5 at.

For example, the luminescence conversion element 4 contains at least one phosphor or consists of at least one phosphor. In one embodiment, the at least one phosphor is contained in a ceramic material or the luminescence conversion element 4 consists of a

Luminescent ceramic containing, for example, an aluminum nitride. In another embodiment, the

Luminescence Conversion Element Particles of the phosphor or of the phosphors embedded in a matrix material, for example a thermoset material or a thermoplastic material. In one embodiment, the

Phosphor particles embedded in an epoxy resin matrix or a matrix of a silicone material. The luminescence conversion element 4 is - in particular by means of the phosphor or at least one of

Phosphors - designed to convert a portion of the light emitted from the first LED chip 2 blue light in red light. In particular, that is

Luminescence conversion element 4 for the absorption of

electromagnetic primary radiation from the blue

Spectral range and to emit secondary radiation in the red spectral range, in particular of light with an intensity maximum at a wavelength between 600 nm and 750 nm, in particular between 650 nm and 700 nm, the boundaries are included. For example, the intensity maximum of the secondary radiation has a

Wavelength between 650 nm and 750 nm, preferably between 610 nm and 640 nm, the boundaries are included.

For example, the luminescence conversion element 4 contains an aluminum nitride-based phosphor which is suitable for absorbing primary radiation from the blue spectral range and for emitting secondary radiation from the red

Spectral range is formed. In the present case, the phosphor is that designated BR1 (MCC-A1N) or BR101D from Mitsubishi Chemical

Corporation commercially available phosphor.

In a variant of this embodiment, the luminescence conversion element contains a further phosphor, in particular a garnet phosphor such as YAG: Ce, which is designed to emit secondary radiation from the yellow spectral range. In particular, the secondary radiation of the further phosphor has a wavelength between 550 nm and 600 nm, for example between 565 nm and 585 nm, wherein the Borders are included. The

However, luminescence conversion element 4 is free of a phosphor, the secondary radiation with a

Intensity maximum emitted in the green spectral range.

FIG. 10 shows the color loci of the red secondary radiation emitting phosphor and the semiconductor layer sequence of the second LED chip 3 of the luminescence diode arrangement 1 according to the first exemplary embodiment in the CIE diagram.

For example, in the CIE diagram, the phosphor formed to emit secondary radiation from the red spectral region has a chromaticity coordinate [XR _/ YR] _/ where XR> 0.6 and YR ^ 0.25. In particular, the coordinates XR and YR are in one by 0.6 -S XR -S 0.75 and

0.25 y ^ 0.45 limited range of the CIE diagram.

Preferably, the color location of the red light is in a region P which is the red corner of the NTSC color space

(Coordinates: x = 0.67 and y = 0.33) as well as the color loci whose x and y coordinates deviate from this value by 0.1 or less.

The light emitted from the semiconductor layer sequence of the second luminescence ^¬ diode chips 3 green light in particular has a color point in the CIE chromaticity diagram, which is in a color locus PQ containing the color location on the Spektralfarblinie S, where the wavelength is assigned 520 nm, and the chromaticity whose distance in the y direction is less than 0.1 and in the y direction is less than 0.15 from this color locus. In contrast, with phosphors which emit secondary radiation with an intensity maximum in the green spectral range - for example with orthosilicate phosphors - usually only color locations P _{conv can be} achieved, which are further removed from the color locus of a green spectral color on the spectral color line S (see FIG. 10). The color location range P _conv achievable with such green emitting phosphors lies almost entirely within the so-called NTSC color space, which is defined by the triangle NTSC with the coordinates

[0, 67; 0, 33], [0.21, 0.71] and [0.14, 0.08] in the CIE diagram. Another color space shown in FIG. 10 is the so-called sRGB color space, which in the CIE diagram is defined by the triangle sRGB with the coordinates

[0, 64; 0, 33], [0.30, 0.60], and [0.15, 0.06].

The luminescence diode arrangement 1 according to the first exemplary embodiment is designed to emit mixed light which contains blue light of the first luminescence diode chip 2, green light of the second luminescence diode chip 3 and red light of the luminescence conversion element 4. In the CIE diagram, for example, the mixed light has a color locus with the

Coordinates = 0.27 and = 0.24 (see FIG. 12).

FIG. 11 shows the emission spectrum of the light emitting diode array according to the first embodiment

emitted mixed light. In FIG. 11, the intensity I of the mixed light is plotted in arbitrary units as a function of the emission wavelength λ.

The mixed light has a first emission peak which extends from about 410 nm to 480 nm and an emission maximum Ig in the blue spectral range, which corresponds to the dominant wavelength of the first LED chip 2, at 450 nm having. A second peak extends from about 490 nm to 570 nm with an intensity maximum IQ in the green

Spectral range at 525 nm, which is the dominant

Wavelength of the semiconductor layer sequence of the second

Luminescence diode chips 3 corresponds. A third peak of the intensity spectrum of the mixed light extends from about 580 nm to at least 750 nm, in particular to about 780 nm and has an intensity maximum I R in the red spectral range at a wavelength of about 640 nm.

The ratios of the intensity maxima of the three peaks are chosen in particular such that the mixed light causes a white color impression. The intensity maxima of the first, second and third peaks in the present case have a ratio of about 10: 4: 2.

FIG. 2 shows a schematic plan view of the front side 100 of a luminescence ^diode arrangement 1 according to a second exemplary embodiment.

The luminescence diode arrangement 1 according to the second

Embodiment thereby differs from that of the first embodiment, which is also the second

Lumineszenzdiodenchip 2 is provided with the luminescence conversion element 4. By way of example, a first part 4A of the luminescence ^{conversion element is} applied to the semiconductor layer ^{sequence of} the first luminescence diode ^chip , and a second part 4B of the luminescence conversion element is applied to the semiconductor layer ^{sequence of} the second luminescence diode ^chip3 .

The first part 4A and / or the second part 4B of the

Luminescence conversion element may, for example, analogous to the embodiment of in connection with the first

Embodiment described Lumineszenzkonversions- be formed elements 4. In particular, the first part 4A and / or the second part 4B may each be a converter plate or one of the respective ones

Semiconductor layer sequence act at least partially enclosing cap.

FIGS. 3A and 3B show a luminescence diode arrangement 1 according to a third exemplary embodiment in one

schematic top view of the front 100 (Fig. 3A) and in a schematic cross section (Fig. 3B).

In contrast to the first and second embodiments, the luminescence conversion element 4 is at the third

Embodiment not designed as a layer which is applied to the semiconductor layer sequence of the first and the first and second LED chips 2, 3. Instead, the luminescence conversion element 4 is integrally formed with the component envelope which encapsulates the luminescence diode chips 2, 3. In the present case, the component casing contains a potting compound which preferably comprises an epoxy resin and / or a silicone material.

Conveniently, the first and second luminescence ^¬ diode chip 2 is encapsulated in this embodiment by means of the luminescence conversion element 4 in the recess 50 of the housing member 5. 3 Preferably that fills

Luminescence conversion element 4, the recess 50 partially or completely and in particular adjacent to a

Floor surface and / or at least one side surface of the

Recess 50 at. In particular, it covers the entire bottom surface of the recess 50 in a plan view of the front side. In particular, in embodiments such as the second and third embodiments in which the second LED chip 3 is not covered by the luminescence conversion element 4 or 4B, the luminescence conversion element may be configured to red light a portion of the green light emitted by the second LED chip 3

and / or convert to yellow light. The conversion of green light of the second LED chip 2 into red light may have a lower efficiency than that

Conversion of blue light of the first LED chip 2 into red light.

FIGS. 4A and 4B show a luminescence diode arrangement 1 according to a fourth exemplary embodiment in one

schematic plan view of the front 100 (Fig. 4A) and in a schematic cross section (Fig. 4B).

The Lumineszenzdiodenanordnung 1 according to the fourth

Embodiment differs from that of the first embodiment in that the first

Lumineszenzdiodenchip 2 is arranged in the reflector trough 50 of a first component housing 5A and the second

Lumineszenzdiodenchip 3 is arranged in the reflector trough 50 of a second, different from the first component housing 5B. The component housings 5A, 5B can

be mounted for example on a common component carrier 6.

The luminescence conversion element 4 is as in the first

Embodiment as a luminescence conversion layer on the first LED chip 2 applied. In the

Reflector trough 50 of the second component housing is

For example, contain no luminescence conversion element. FIGS. 5A and 5B show a fifth exemplary embodiment of a luminescence diode arrangement 1 in a schematic plan view of the front side 100 (FIG. 5A) and in a schematic cross section (FIG. 5B).

The Lumineszenzdiodenanordnung 5 according to the fifth

Embodiment corresponds substantially to that of the fourth embodiment, but with the difference that the luminescence conversion element is not applied as a layer on the first LED chip 2.

Instead, analogously to the third exemplary embodiment, the luminescence conversion element 4 is integrated with the potting compound which encapsulates the first luminescence diode chip 2. In particular, the luminescence is filled into the reflector trough 50 of the first housing member 5A ^¬ conversion element. 4

The reflector trough 50 of the second component housing 5B may, for example, be free of a potting compound or be partially or completely filled with a translucent or transparent potting compound, wherein the translucent or transparent potting compound in particular does not contain any phosphor.

Figure 6 shows a sixth embodiment of a

Luminescence diode arrangement 1 in plan view of her

Front 100.

As in the second embodiment, the first one

Lumineszenzdiodenchip 2 with a first part 4A of the

Provided luminescence conversion element and the second

Luminescence diode chip 3 is connected to a second part 4B of the Provided luminescence conversion element. In contrast to the second exemplary embodiment, however, the first and second luminescence diode chips 2, 3 are arranged in separate component housings 5A, 5B. In particular, the first one

Lumineszenzdiodenchip 2 and the first part of the 4A

Lumineszenzkonversionselements arranged in the reflector trough 50 of the first component housing 5A and the second

Lumineszenzdiodenchip 3 and the second part 4B of

Luminescence conversion element are arranged in the reflector trough 50 of the second component housing 5B.

Figure 7 shows a seventh embodiment of a

Luminescence diode arrangement 1 in plan view of her

Front 100.

This embodiment differs from the sixth embodiment in that the first part 4A and the second part 4B of the luminescence conversion element than the respective luminescence diode chip 2 or 3 in the

Reflector trough 50 of the respective component housing 5A and 5B encapsulating potting compound are executed.

FIG. 8 shows an exemplary embodiment of a backlighting device 10 in a schematic plan view.

The backlight device 10 includes a plurality of light emitting diode arrays 1, which may be formed according to the first embodiment, for example. The luminescence diode arrangements 1 of the other exemplary embodiments are also suitable for the backlighting device 10. The luminescence diode arrangements 1 can be arranged, for example, on a common device carrier 7. In one embodiment, they are in rows and columns

arranged.

Figure 9 shows a display device with the

Backlight device 10 according to the embodiment of Figure 8 in a schematic cross section. In the

Display device according to the embodiment of FIG. 9, which is in particular an LCD,

the backlighting device 10 illuminates a

Light valve assembly 8, which contains in particular a plurality of liquid crystal cells.

FIG. 12 shows the gamut 9 of the display device which can be achieved by means of the backlighting device 10 in accordance with FIG

Embodiment of Figure 9 in the CIE standard color chart.

The gamut 9 of the display device, when displayed in the CIE standard color chart, has a surface area that is significantly larger than that of the sRGB color space (represented by the triangle labeled sRGB in Figure 12). In particular, the surface area of the gamut 9 is about 110% of the

Area of the NTSC color space shown in FIG. 10

is drawn.

In a variant, the display device has a

Backlight device 10, wherein the first

LED chips 2 of the LED arrays 1 have a dominant wavelength of 440 nm instead of 450 nm as in the first embodiment have. In this variant, the gamut 9 of the display device has a particular Area of 120% or more of the area of the NTSC color space.

The invention is not limited by the description based on the embodiments of these. Rather, the invention includes any novel feature as well as any combination of features, even if that feature or combination is not explicitly set forth in the claims or exemplary embodiments.

This patent application claims the priorities of German patent applications DE 102010012423.0 and DE

102009059889.8, the disclosure of which hereby by

Back reference is added.

Claims

claims

1. Lumineszenzdiodenanordnung (1) with a first

Luminescence diode chip (2), a second

Luminescence diode chip (3) and a

Lumineszenzkonversionselement (4, 4A, 4B), wherein

the first luminescence diode chip (2) is designed to emit blue light,

- The second LED chip (3) a

Semiconductor layer sequence, which is designed for the emission of green light,

- The luminescence conversion element (4, 4A, 4B) for the conversion of a part of the first

Luminescence diode chip (2) emitted blue light is formed in red light, and

the luminescence diode arrangement (1) is designed to emit mixed light, the blue light of the first luminescence diode chip (2), green light of the second luminescence diode chip (3) and red light of the

Lumineszenzkonversionselements (4, 4A, 4B) contains.

2. Luminescence diode arrangement (1) according to claim 1, wherein the mixed light causes a white color impression.

3. Lumineszenzdiodenanordnung (1) according to one of

previous claims, wherein the second

Luminescence diode chip (3) emitted green light in the CIE standard color chart has a color location (Pg) ^with the coordinates [XQ, YQ], where xg ^ 0.15 and yg ^ 0.7.

4. Lumineszenzdiodenanordnung (1) according to one of

previous claims, for the emission of the

Mixed light is provided by a front side (100), wherein, in plan view of the front side (100), the first luminescence diode chip (2) at least in places by the luminescence conversion element (4, 4A) is covered and the second LED chip (3) of the luminescence conversion element (4, 4A, 4B) is uncovered.

Luminescence diode arrangement (1) according to one of claims 1 to 3, wherein the luminescence conversion element (4, 4A, 4B) for the conversion of a part of the second

Luminescence diode chip (3) emitted green light is formed in red light.

Luminescence diode arrangement (1) according to one of claims 1 to 3 or according to claim 5, which is provided for emitting the mixed light from a front side (100), wherein, in plan view of the front side (100), the first LED chip (2) and the second

Lumineszenzdiodenchip (3) at least in places by the luminescence conversion element (4, 4A, 4B) are covered.

Luminescence diode arrangement (1) according to one of

previous claims, wherein the

Lumineszenzkonversionselement (4, 4A, 4B) is additionally designed to blue light of the first

Converting LED chips (2) and / or green light of the second LED chip (3) into yellow light.

Luminescence diode arrangement (1) according to one of

previous claims, wherein all

Luminescence diode chips (2, 3) of

Luminescence diode arrangement (1) on the same Semiconductor material, in particular based on the compound semiconductor material AlInGaN.

9. Lumineszenzdiodenanordnung (1) according to one of

previous claims, wherein all

Luminescence diode chips (2, 3) of

Luminescence diode arrangement (1) semiconductor layer sequences containing, which are designed to emit light, in particular visible light, with a dominant wavelength outside the red spectral range.

10. Lumineszenzdiodenanordnung (1) according to one of

preceding claims, wherein the mixed light a

Intensity maximum (I Q) in the green spectral region and the Lumineszenzdiodenanordnung (1) is free of a phosphor having a dominant wavelength from the green spectral range.

11. Luminescence diode arrangement (1) according to one of

preceding claims with a control unit which is adapted to drive the first LED chip (2) and the second LED chip (3) separately.

12. Lumineszenzdiodenanordnung (1) according to one of

previous claims, with an optoelectronic component (5), the first LED chip (2), the second LED chip (3) and the

Luminescence conversion element (4), in particular in a common reflector trough (50) comprises.

13. Luminescence diode arrangement (1) according to one of claims 1 to 11, with a first optoelectronic component (5A), which comprises the first luminescence diode chip (2), and with a second optoelectronic component (5B) which comprises the second luminescence diode chip (3), wherein either the luminescence conversion element (4) is covered by the first optoelectronic component (5A) or a first part (4A) of the luminescence conversion element of the first optoelectronic component (5A) and a second part (4B) of the luminescence conversion element of the second optoelectronic component (5B) is included.

14. backlight device (10) for a

Display device with a plurality of

Luminescence diode arrangements (1) according to one of

previous claims.

15. Display device, in particular

Liquid crystal display device, with a

Backlight device (10) according to claim 13, in which a gamut (9) is achieved by means of the mixed light emitted by the backlighting device (10), the area of which, when displayed in the CIE array

Standard color chart is at least 110 percent of the NTSC color space (NTSC) area.