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EP2181464A4 - Solar cell having porous structure and method for fabrication thereof - Google Patents

Solar cell having porous structure and method for fabrication thereof

Info

Publication number
EP2181464A4
EP2181464A4 EP08793370.1A EP08793370A EP2181464A4 EP 2181464 A4 EP2181464 A4 EP 2181464A4 EP 08793370 A EP08793370 A EP 08793370A EP 2181464 A4 EP2181464 A4 EP 2181464A4
Authority
EP
European Patent Office
Prior art keywords
fabrication
solar cell
porous structure
porous
solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP08793370.1A
Other languages
German (de)
French (fr)
Other versions
EP2181464A2 (en
Inventor
Il-Hyoung Jung
Ju-Hwan Yun
Jong-Hwan Kim
Jin-Ah Kim
Sun-Hee Kim
Ji-Hoon Ko
Young-Hyun Lee
Bum-Sung Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
Original Assignee
LG Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020070084157A external-priority patent/KR20090019600A/en
Priority claimed from KR1020070106215A external-priority patent/KR20090040728A/en
Priority claimed from KR1020070131101A external-priority patent/KR20090063653A/en
Priority claimed from KR1020080001763A external-priority patent/KR20090076035A/en
Application filed by LG Electronics Inc filed Critical LG Electronics Inc
Publication of EP2181464A2 publication Critical patent/EP2181464A2/en
Publication of EP2181464A4 publication Critical patent/EP2181464A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H01L31/0284—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table comprising porous silicon as part of the active layer(s)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
EP08793370.1A 2007-08-21 2008-08-20 Solar cell having porous structure and method for fabrication thereof Withdrawn EP2181464A4 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR1020070084157A KR20090019600A (en) 2007-08-21 2007-08-21 High-efficiency solar cell and manufacturing method thereof
KR1020070106215A KR20090040728A (en) 2007-10-22 2007-10-22 Solar cell using a semiconductor wafer substrate with porous surface and fabrication thereof
KR1020070131101A KR20090063653A (en) 2007-12-14 2007-12-14 Method of manufacturing pn junction device and solar cell comprising the said pn junction device
KR1020080001763A KR20090076035A (en) 2008-01-07 2008-01-07 Solar cell having passivated porous surface and fabrication method thereof
PCT/KR2008/004857 WO2009025502A2 (en) 2007-08-21 2008-08-20 Solar cell having porous structure and method for fabrication thereof

Publications (2)

Publication Number Publication Date
EP2181464A2 EP2181464A2 (en) 2010-05-05
EP2181464A4 true EP2181464A4 (en) 2015-04-01

Family

ID=40378827

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08793370.1A Withdrawn EP2181464A4 (en) 2007-08-21 2008-08-20 Solar cell having porous structure and method for fabrication thereof

Country Status (3)

Country Link
EP (1) EP2181464A4 (en)
JP (1) JP2010527163A (en)
WO (1) WO2009025502A2 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090236317A1 (en) * 2008-03-21 2009-09-24 Midwest Research Institute Anti-reflection etching of silicon surfaces catalyzed with ionic metal solutions
KR101002682B1 (en) * 2008-08-28 2010-12-21 삼성전기주식회사 Solar cell and manufacturing method thereof
JP5300681B2 (en) * 2009-09-30 2013-09-25 東京エレクトロン株式会社 Manufacturing method of solar cell
JP5340103B2 (en) * 2009-09-30 2013-11-13 東京エレクトロン株式会社 Solar cell
CA2815754A1 (en) * 2009-11-11 2011-05-19 Alliance For Sustainable Energy, Llc Wet-chemical systems and methods for producing black silicon substrates
JP5424270B2 (en) 2010-05-11 2014-02-26 国立大学法人東京農工大学 Semiconductor solar cell
CN101976703B (en) * 2010-07-28 2011-12-14 常州天合光能有限公司 Process of antireflection coating battery capable of reducing surface recombination
CN101964367A (en) * 2010-08-23 2011-02-02 中国科学院微电子研究所 Substrate with porous structure and preparation method thereof
KR101658677B1 (en) * 2010-12-16 2016-09-21 엘지전자 주식회사 Solar cell and manufacturing mathod thereof
CN103493214B (en) 2011-01-26 2016-01-20 胜高股份有限公司 Wafer used for solar batteries and preparation method thereof
KR101763319B1 (en) 2011-01-31 2017-08-01 한양대학교 산학협력단 Method for manufacturing a solar cell by electrochemically etching
CN103283001A (en) 2011-03-08 2013-09-04 可持续能源联盟有限责任公司 Efficient black silicon photovoltaic devices with enhanced blue response
CN102820370B (en) * 2011-06-08 2015-01-14 北京北方微电子基地设备工艺研究中心有限责任公司 Texture surface making treatment method for silicon wafer
CN107046079A (en) * 2016-02-05 2017-08-15 上海凯世通半导体股份有限公司 Doping method
CN106653939B (en) * 2016-11-17 2018-03-27 横店集团东磁股份有限公司 A kind of thermal oxidation technology applied to crystal silicon solar batteries
CN114583015A (en) * 2022-03-25 2022-06-03 安徽华晟新能源科技有限公司 Heterojunction battery and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104463A (en) * 1992-09-18 1994-04-15 Hitachi Ltd Solar battery and manufacture thereof
EP0933822A2 (en) * 1998-01-20 1999-08-04 Sharp Kabushiki Kaisha Substrate for forming high-strenght thin semiconductor element and method for manufacturing high-strength thin semiconductor element
US20050126627A1 (en) * 2003-11-19 2005-06-16 Sharp Kabushiki Kaisha Solar cell and method for producing the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990016619A (en) * 1997-08-18 1999-03-15 손욱 Manufacturing method of electroluminescent device using porous silicon
KR100434537B1 (en) * 1999-03-31 2004-06-05 삼성전자주식회사 Multi layer wafer with thick sacrificial layer and fabricating method thereof
JP3838911B2 (en) * 2001-12-25 2006-10-25 京セラ株式会社 Method for manufacturing solar cell element
KR100922346B1 (en) * 2002-04-03 2009-10-21 삼성에스디아이 주식회사 Solar cell and fabrication method thereof
JP2005072388A (en) * 2003-08-26 2005-03-17 Kyocera Corp Method for manufacturing solar battery element
JP2005136062A (en) * 2003-10-29 2005-05-26 Sharp Corp Manufacturing method of solar battery
KR100677374B1 (en) * 2005-11-14 2007-02-02 준 신 이 Manufacturing method of porous solar cells using thin silicon wafer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104463A (en) * 1992-09-18 1994-04-15 Hitachi Ltd Solar battery and manufacture thereof
EP0933822A2 (en) * 1998-01-20 1999-08-04 Sharp Kabushiki Kaisha Substrate for forming high-strenght thin semiconductor element and method for manufacturing high-strength thin semiconductor element
US20050126627A1 (en) * 2003-11-19 2005-06-16 Sharp Kabushiki Kaisha Solar cell and method for producing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KOYNOV SVETOSLAV ET AL: "Black nonreflecting silicon surfaces for solar cells", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 88, no. 20, 16 May 2006 (2006-05-16), pages 203107 - 203107, XP012081745, ISSN: 0003-6951, DOI: 10.1063/1.2204573 *

Also Published As

Publication number Publication date
JP2010527163A (en) 2010-08-05
EP2181464A2 (en) 2010-05-05
WO2009025502A3 (en) 2009-04-23
WO2009025502A2 (en) 2009-02-26

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Legal Events

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