EP1981618B1 - Method of treating a gas stream - Google Patents
Method of treating a gas stream Download PDFInfo
- Publication number
- EP1981618B1 EP1981618B1 EP07700419A EP07700419A EP1981618B1 EP 1981618 B1 EP1981618 B1 EP 1981618B1 EP 07700419 A EP07700419 A EP 07700419A EP 07700419 A EP07700419 A EP 07700419A EP 1981618 B1 EP1981618 B1 EP 1981618B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- gas stream
- gas
- abatement device
- species
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000010926 purge Methods 0.000 claims abstract description 25
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 6
- 238000005086 pumping Methods 0.000 claims description 16
- 239000006227 byproduct Substances 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 163
- 239000011261 inert gas Substances 0.000 abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 230000006378 damage Effects 0.000 description 6
- 229910004014 SiF4 Inorganic materials 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 5
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- IYRWEQXVUNLMAY-UHFFFAOYSA-N carbonyl fluoride Chemical compound FC(F)=O IYRWEQXVUNLMAY-UHFFFAOYSA-N 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 150000002835 noble gases Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 1
- 235000008733 Citrus aurantifolia Nutrition 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 235000011941 Tilia x europaea Nutrition 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000002737 fuel gas Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000004571 lime Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/30—Controlling by gas-analysis apparatus
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/46—Removing components of defined structure
- B01D53/68—Halogens or halogen compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/46—Removing components of defined structure
- B01D53/68—Halogens or halogen compounds
- B01D53/70—Organic halogen compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
- B01D53/75—Multi-step processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2258/00—Sources of waste gases
- B01D2258/02—Other waste gases
- B01D2258/0216—Other waste gases from CVD treatment or semi-conductor manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2259/00—Type of treatment
- B01D2259/80—Employing electric, magnetic, electromagnetic or wave energy, or particle radiation
- B01D2259/818—Employing electrical discharges or the generation of a plasma
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
- B01D53/77—Liquid phase processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
Definitions
- the present invention relates to a method of, and apparatus for, treating a gas stream exhaust from a chamber.
- Various different gases may be supplied to a process chamber during the formation of a semiconductor or flat panel display device within the chamber.
- Chemical vapour deposition is used to deposit thin films or layers on the surface of a substrate or wafer located in a deposition chamber. This process operates by supplying one or more reactive gases to the chamber, often using a carrier gas, to the substrate's surface under conditions that encourage chemical reactions to take place at the surface.
- TEOS and one of oxygen and ozone may be supplied to the deposition chamber for the formation of a silicon oxide layer on the substrate, and silane and ammonia may be supplied for the formation of a silicon nitride layer.
- Polycrystalline silicon, or polysilicon is deposited on the substrate by the decomposition of silane or a chlorosilane by heat.
- Gases are also supplied to an etch chamber to perform selective etching of areas of the deposited layers, for example during the formation of electrodes and the source and drain regions of a semiconductor device.
- Etching gases can include the perfluorinated (PFC) gases such as CF 4 , C 2 F 6 , C 3 F 8 , and C 4 F 8 , although other etchants including hydrofluorocarbon gases, such as CHF 3 , C 2 HF 5 and CH 2 F 2 , fluorine, NF 3 and SF 6 .
- PFC perfluorinated
- Such gases are commonly used to form an opening in a region of a nitride or oxide layer formed over a polysilicon layer and which is exposed by a photoresist layer.
- Argon is generally also conveyed to the chamber with the etching gas to provide a facilitating gas for the process being conducted in the etch chamber.
- the perfluorinated gases mentioned above are greenhouse gases, and so in view of this, before the exhaust gas is vented to the atmosphere, an abatement device is typically provided to treat the exhaust gas to convert the PFC gases into species that can be readily removed from the exhaust gas, for example by conventional scrubbing, and/or can be safely exhausted to the atmosphere.
- an abatement device is typically provided to treat the exhaust gas to convert the PFC gases into species that can be readily removed from the exhaust gas, for example by conventional scrubbing, and/or can be safely exhausted to the atmosphere.
- the addition of purge gas can significantly decrease the destruction efficiency of the abatement device or increase the energy requirement of the abatement device.
- the present invention provides a method of treating a gas stream exhaust from a chamber, the method comprising the steps of adding to the gas stream a purge gas for a vacuum pump for pumping the gas stream from the chamber; and characterised in that the method further comprises the steps of : removing a first species from the gas stream using a first abatement device; splitting the gas stream into first and second portions; removing a second species from the first portion of the gas stream using a second, plasma abatement device, and returning the second portion of the gas stream to the pump.
- the flow rate of the gas stream entering the plasma abatement device can be significantly reduced, thereby enhancing the destruction efficiency of the device.
- the concentration of perfluorinated species within the non-diverted portion of the gas stream will gradually increase with time, which can improve the destruction efficiency of the plasma abatement device.
- the flow rate of fresh purge gas to the vacuum pump can be significantly reduced. As this is a closed loop system, in that the diverted portion of the gas stream is retained within the abatement system, all of the perfluorinated species in the gas stream will eventually be treated by the plasma abatement device.
- the diverted portion of the gas stream is preferably passed through at least one of a heat exchanger and a compressor prior to its return to the pump.
- the diverted portion of the gas stream is preferably added to a stream of inert gas being supplied to the pump.
- this portion of the gas stream may be added to the gas stream separately from the inert gas, either upstream, downstream or between stages of the vacuum pump.
- At least one species is preferably removed from the gas stream before said portion of the gas stream is diverted therefrom.
- This species is preferably a chemically reactive or corrosive species contained by the gas stream, and may be removed by any suitable means.
- the gas stream is passed through a heated bed of one or more materials for reacting with said species.
- This species may be a by-product from a process occurring in a chamber from which the gas stream is drawn by the vacuum pump.
- the species may comprise one of SiF 4 and COF 2 .
- the plasma abatement device may be a microwave plasma abatement device or a dc torch.
- the perfluorinated species may be any of the gases having the general formula C x F y H z , where x ⁇ 1, y ⁇ 1 and z ⁇ 0, such as CF 4 , C 2 F 6 , C 3 F 8 , C 4 F 8 , CHF 3 , C 2 HF 5 and CH 2 F 2 , NF 3 or SF 6 .
- the gas stream exhaust from the plasma abatement device may be conveyed to a third abatement device for removing a third species from the gas stream.
- This third species may be a by-product from the removal of the second species from the gas stream.
- the third abatement device preferably comprises a wet scrubber.
- the present invention provides an apparatus for treating a gas stream, the apparatus comprising a vacuum pump and a plasma abatement device located downstream from the vacuum pump for removing a perfluorinated species from the gas stream characterised in that the apparatus further comprises a first abatement device for removing a first species from the gas stream upstream of the plasma abatement device, means for diverting a portion of the gas stream away from the plasma abatement device, and means for returning the diverted portion to the gas stream as a purge gas for the vacuum pump.
- the present invention provides apparatus for treating a gas stream, the apparatus comprising a vacuum pump, a first abatement device for removing a first species from the gas stream, a second, plasma abatement device located downstream from the first abatement device for removing a second, perfluorinated species from the gas stream, means for diverting a portion of the gas stream away from the plasma abatement device, and means for returning the diverted portion to the gas stream as a purge gas for the vacuum pump.
- the chamber 10 of the plasma etch reactor is provided with at least one inlet 12 for receiving process gases from gas sources indicated generally at 14 in the drawing.
- a control valve or mass flow controller 15 may be provided for each respective gas, the mass flow controllers 15 being controlled by a system controller to ensure that the required amount of gas is supplied to the chamber 10.
- the process gases comprise an etchant and oxygen as reactants for the process being conducted in the chamber 10, together with argon.
- Suitable etchant include the perfluorinated compounds having the general formula C x F y H z where x ⁇ 1, y ⁇ 1 and z ⁇ 0, such as CF 4 , C 2 F 6 , C 3 F 8 , C 4 F 8 , CHF 3 , C 2 HF 5 and CH 2 F 2 , NF 3 , and SF 6 .
- Argon provides a facilitating gas for the process being conducted in the chamber 10.
- Helium may also be supplied to the chamber 10 in relatively small amounts to cool the back surface of a substrate located within the process chamber.
- the plasma etch reactor may be any suitable reactor for generating a plasma for etching the surface of a substrate located therein to a desired geometry. Examples include an inductively coupled plasma etch reactor, an electron cyclotron resonance (ECR) plasma etch reactor, or other high-density plasma reactor.
- the plasma etch reactor is a reactor in which a semiconductor manufacturing process takes place, and so the surface of the substrate may comprise a polysilicon or a dielectric film. Alternatively, the manufacture of flat panel displays may take place within the plasma etch reactor.
- a gas stream is drawn from the outlet 16 of the chamber 10 by a vacuum pumping arrangement comprising one or more vacuum pumps, indicated generally at 18.
- the vacuum pumping arrangement may be in the form of a turbomolecular pump and/or a dry pump having intermeshing rotors.
- a turbomolecular pump can generate a vacuum of at least 10 -3 mbar in the chamber 10.
- the flow rate of the gas stream from the chamber 10 is generally around 0.5 to 5 slm.
- the gas stream exhaust from the outlet 16 of the chamber 10 will contain a mixture of the reactants, any unreactive noble gases supplied to the chamber, and by-products from the etch process.
- the gas stream may contain a mixture of C x F y H z , O 2 , Ar, He, SiF 4 , and COF 2 .
- the etching process may include a number of different process steps, and so the composition of the gas stream exhaust from the chamber 10, and/or the relative proportions of the components of the gas stream, may vary with time.
- a stream of inert purge gas such as helium or, as in this example, nitrogen, is supplied from a source 20 thereof to the vacuum pumping arrangement, for example for increasing the longevity and effectiveness of dynamic shaft seals of the pump(s) 18, and/or for diluting the gas stream to reduce corrosion and degradation resulting from the pumping of aggressive, unconsumed gas molecules.
- Purge gas is generally added to the gas stream at a relatively high flow rate, for example around 40 to 50 slm, in comparison to the flow rate of gas from the chamber 10.
- the flow rate of purge gas to the vacuum pumping arrangement may be controlled using a control valve 21 located between the pump(s) 18 and the purge gas source 20.
- the gas stream exhaust from the vacuum pumping arrangement thus now contains nitrogen, in addition to gas exhaust from the chamber 10.
- the gas stream is subsequently conveyed through a first abatement device 22.
- the first abatement device 22 may take any desired form, such as an incineration or thermal decomposition unit, for removing desired components from the gas stream.
- the first abatement device 22 is provided in the form of a gas reactor column or other dry abatement device for removing SiF 4 , COF 2 and the more reactive C x F y H z components from the gas stream.
- a gas reactor column contains a number of heated beds of material selected for the removal of particular components from the gas stream.
- the gas reactor column contains at least two heated stages, which may be conveniently provided within removable cartridges surrounded by an electrically heated furnace.
- a first stage contains heated granules of silicon for preheating the gas stream and converting the more reactive C x F y H z components into F 2 and C, which either falls from the column in the form of soot or is converted into CO and CO 2 by the O 2 present within the gas stream.
- a second stage contains heated calcium oxide, preferably in the form of lime, for converting SiF 4 into CaF 2 and SiO 2 , and F 2 into CaF 2 .
- the relatively unreactive gases in the gas stream namely, in this example, the noble gases He, and Ar, N 2 purge gas, the more stable C x F 2x+2 components, such as CF 4 and C 2 H 6 , CO and/or CO 2 pass through the gas reactor column unchanged.
- two or more similar gas reactor columns may be provided in parallel.
- one or more valves may be disposed between the vacuum pump 18 and the gas reactor columns to enable the gas stream to be directed to one gas reactor column while the other gas reactor column is off-line, for example for replacement of one or more of the cartridges, or being subject to a purge using, for example, nitrogen gas.
- an arrangement of one or more valves is also provided downstream from the gas reactor columns to connect the outputs from the gas reactor columns to a common gas conduit.
- the gas stream exhaust from the first abatement device 22 typically contains, in this example, He, Ar, N 2 , one or more perfluorinated species, such as CF 4 and C 2 F 6 , and one or both of CO 2 and CO.
- a second abatement device in the form of a plasma abatement device 24 is provided downstream from the first abatement device 22.
- the plasma abatement device 24 is preferably a microwave plasma abatement device, although other forms of plasma abatement device, such as a dc torch, may be used.
- a branch 26 is located between the first abatement device 22 and the plasma abatement device 24 for receiving the gas stream from the first abatement device 22 and splitting the gas stream into first and second portions.
- the first portion of the gas stream is conveyed to the plasma abatement device 24 through a variable control valve 28 or other device for controlling the flow rate of gas into the plasma abatement device 24.
- the second portion of the gas stream is diverted away from the plasma abatement device 24, and is conducted by gas conduit 30 back to the vacuum pumping arrangement for forming at least part of the purge gas supplied to the vacuum pumping arrangement.
- the diverted portion of the gas stream is added to the stream of fresh purge gas supplied from the source 20.
- the diverted portion of the gas stream may be supplied separately to the vacuum pumping arrangement, either upstream, downstream or between stages of the pump(s) 18.
- a heat exchanger 32 and a compressor 34 may be provided in the gas conduit 30 for respectively cooling and compressing the diverted portion of the gas stream prior to its return to the vacuum pumping arrangement.
- the flow rate of gas entering the plasma abatement device 24 can be significantly reduced, thereby enhancing the destruction efficiency of the plasma abatement device 24.
- the concentration of the perfluorinated species in the first portion of the gas stream will increase, and this can improve the destruction efficiency of the plasma abatement device 24.
- the flow rate of fresh purge gas to the vacuum pump 18 can be significantly reduced, for example using control valve 21.
- the amount of fresh purge gas supplied to the vacuum pump 18 can be reduced by 75%.
- the plasma abatement device 24 converts the perfluorinated species within the first portion of the gas stream into species such as CO 2 and HF that can be removed from the gas stream by a wet scrubber 36 or other similar abatement device located downstream from the plasma abatement device 24.
- the plasma abatement device 24 is used to treat gas streams exhaust from a plurality of chambers 10 (two shown in Figure 2 for clarity purposes only).
- the gas stream exhaust from each chamber 10 passes through a respective vacuum pumping arrangement 18 and first abatement device 22 before being split into first and second portions at respective branches 26.
- each second potion is diverted away from the plasma abatement device 24 and returned to a respective vacuum pumping arrangement via respective conduit 30.
- the non-diverted first portions of the gas streams are combined at manifold 40, and conveyed to the plasma abatement device 24 for the removal of perfluorinated species therefrom.
- the gas streams exhaust from the vacuum pumping arrangements of the chambers 10 are combined at a manifold 50 located upstream from first abatement device 22.
- the combined gas streams are treated in the first abatement device 22 before being split into first and second portions at branch 26.
- the first portion of the combined gas streams is conveyed to the plasma abatement device 24 for the removal of perfluorinated species therefrom.
- the second portion of the combined gas streams is conveyed by conduit 30 through heat exchanger 32 and compressor 34 before being split at branch 52 into two similar sub-streams, each of which is conveyed back to a respective vacuum pumping arrangement as in the first embodiment.
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Abstract
Description
- The present invention relates to a method of, and apparatus for, treating a gas stream exhaust from a chamber.
- Various different gases may be supplied to a process chamber during the formation of a semiconductor or flat panel display device within the chamber. Chemical vapour deposition (CVD) is used to deposit thin films or layers on the surface of a substrate or wafer located in a deposition chamber. This process operates by supplying one or more reactive gases to the chamber, often using a carrier gas, to the substrate's surface under conditions that encourage chemical reactions to take place at the surface. For example, TEOS and one of oxygen and ozone may be supplied to the deposition chamber for the formation of a silicon oxide layer on the substrate, and silane and ammonia may be supplied for the formation of a silicon nitride layer. Polycrystalline silicon, or polysilicon, is deposited on the substrate by the decomposition of silane or a chlorosilane by heat.
- Gases are also supplied to an etch chamber to perform selective etching of areas of the deposited layers, for example during the formation of electrodes and the source and drain regions of a semiconductor device. Etching gases can include the perfluorinated (PFC) gases such as CF4, C2F6, C3F8, and C4F8, although other etchants including hydrofluorocarbon gases, such as CHF3, C2HF5 and CH2F2, fluorine, NF3 and SF6. Such gases are commonly used to form an opening in a region of a nitride or oxide layer formed over a polysilicon layer and which is exposed by a photoresist layer. Argon is generally also conveyed to the chamber with the etching gas to provide a facilitating gas for the process being conducted in the etch chamber.
- During such an etch process, there is typically a residual amount of the gas supplied to the etch chamber contained in the exhaust gas drawn from the etch chamber by a vacuum pump, together with by-products from the etching process, such as SiF4 and COF2, and inert gases such as Ar. Additional nitrogen is often added to the exhaust gas at a flow rate of around 40 to 50 slm as a purge gas for the vacuum pump.
- The perfluorinated gases mentioned above are greenhouse gases, and so in view of this, before the exhaust gas is vented to the atmosphere, an abatement device is typically provided to treat the exhaust gas to convert the PFC gases into species that can be readily removed from the exhaust gas, for example by conventional scrubbing, and/or can be safely exhausted to the atmosphere. However, in view of the relatively high flow rate of purge gas added to the exhaust gas in comparison to the flow rate of the exhaust gas from the process chamber (typically around 0.5 to 5 slm), the addition of purge gas can significantly decrease the destruction efficiency of the abatement device or increase the energy requirement of the abatement device.
- An Example of a PFC recycling device is described in
JP 10 252651EP 1 297 891 . - In a first aspect, the present invention provides a method of treating a gas stream exhaust from a chamber, the method comprising the steps of adding to the gas stream a purge gas for a vacuum pump for pumping the gas stream from the chamber; and characterised in that the method further comprises the steps of : removing a first species from the gas stream using a first abatement device; splitting the gas stream into first and second portions; removing a second species from the first portion of the gas stream using a second, plasma abatement device, and returning the second portion of the gas stream to the pump.
- By diverting a portion of the gas stream away from the plasma abatement device, the flow rate of the gas stream entering the plasma abatement device can be significantly reduced, thereby enhancing the destruction efficiency of the device. The concentration of perfluorinated species within the non-diverted portion of the gas stream will gradually increase with time, which can improve the destruction efficiency of the plasma abatement device. Furthermore, by returning the diverted portion to the gas stream as a purge gas for the vacuum pump, the flow rate of fresh purge gas to the vacuum pump can be significantly reduced. As this is a closed loop system, in that the diverted portion of the gas stream is retained within the abatement system, all of the perfluorinated species in the gas stream will eventually be treated by the plasma abatement device.
- The diverted portion of the gas stream is preferably passed through at least one of a heat exchanger and a compressor prior to its return to the pump.
- The diverted portion of the gas stream is preferably added to a stream of inert gas being supplied to the pump. Alternatively, this portion of the gas stream may be added to the gas stream separately from the inert gas, either upstream, downstream or between stages of the vacuum pump.
- At least one species is preferably removed from the gas stream before said portion of the gas stream is diverted therefrom. This species is preferably a chemically reactive or corrosive species contained by the gas stream, and may be removed by any suitable means. In the preferred embodiment, the gas stream is passed through a heated bed of one or more materials for reacting with said species. This species may be a by-product from a process occurring in a chamber from which the gas stream is drawn by the vacuum pump. For example, where the process is an etch process performed on a silicon or dielectric layer, the species may comprise one of SiF4 and COF2.
- The plasma abatement device may be a microwave plasma abatement device or a dc torch. By reducing the flow rate of the gas stream through the device, the power requirement of the abatement device for maintaining an acceptable destruction efficiency for the perfluorinated gas can be significantly reduced. The perfluorinated species may be any of the gases having the general formula Cx Fy Hz, where x ≥ 1, y ≥ 1 and z ≥ 0, such as CF4, C2F6, C3F8, C4F8, CHF3, C2HF5 and CH2F2, NF3 or SF6.
- The gas stream exhaust from the plasma abatement device may be conveyed to a third abatement device for removing a third species from the gas stream. This third species may be a by-product from the removal of the second species from the gas stream. The third abatement device preferably comprises a wet scrubber.
- In a third aspect, the present invention provides an apparatus for treating a gas stream, the apparatus comprising a vacuum pump and a plasma abatement device located downstream from the vacuum pump for removing a perfluorinated species from the gas stream characterised in that the apparatus further comprises a first abatement device for removing a first species from the gas stream upstream of the plasma abatement device, means for diverting a portion of the gas stream away from the plasma abatement device, and means for returning the diverted portion to the gas stream as a purge gas for the vacuum pump.
- In a fourth aspect, the present invention provides apparatus for treating a gas stream, the apparatus comprising a vacuum pump, a first abatement device for removing a first species from the gas stream, a second, plasma abatement device located downstream from the first abatement device for removing a second, perfluorinated species from the gas stream, means for diverting a portion of the gas stream away from the plasma abatement device, and means for returning the diverted portion to the gas stream as a purge gas for the vacuum pump.
- Features described above in relation to the first aspect of the invention are equally applicable to the second to fourth aspects, and vice versa.
- Preferred features of the present invention will now be described, by way of example only, with reference to the accompanying drawings, in which:
-
Figure 1 illustrates a first embodiment of an apparatus for treating a gas stream exhaust from a chamber of a plasma etch reactor; -
Figure 2 illustrates a second embodiment of an apparatus for treating a gas stream exhaust from a plurality of chambers; and -
Figure 3 illustrates a third embodiment of an apparatus for treating a gas stream exhaust from a plurality of chambers. - With reference first to
Figure 1 , thechamber 10 of the plasma etch reactor is provided with at least oneinlet 12 for receiving process gases from gas sources indicated generally at 14 in the drawing. A control valve ormass flow controller 15 may be provided for each respective gas, themass flow controllers 15 being controlled by a system controller to ensure that the required amount of gas is supplied to thechamber 10. In this example, the process gases comprise an etchant and oxygen as reactants for the process being conducted in thechamber 10, together with argon. Examples of suitable etchant include the perfluorinated compounds having the general formula CxFyHz where x ≥ 1, y ≥ 1 and z ≥ 0, such as CF4, C2F6, C3F8, C4F8, CHF3, C2HF5 and CH2F2, NF3, and SF6. Argon provides a facilitating gas for the process being conducted in thechamber 10. Helium may also be supplied to thechamber 10 in relatively small amounts to cool the back surface of a substrate located within the process chamber. - The plasma etch reactor may be any suitable reactor for generating a plasma for etching the surface of a substrate located therein to a desired geometry. Examples include an inductively coupled plasma etch reactor, an electron cyclotron resonance (ECR) plasma etch reactor, or other high-density plasma reactor. In this example, the plasma etch reactor is a reactor in which a semiconductor manufacturing process takes place, and so the surface of the substrate may comprise a polysilicon or a dielectric film. Alternatively, the manufacture of flat panel displays may take place within the plasma etch reactor.
- A gas stream is drawn from the
outlet 16 of thechamber 10 by a vacuum pumping arrangement comprising one or more vacuum pumps, indicated generally at 18. The vacuum pumping arrangement may be in the form of a turbomolecular pump and/or a dry pump having intermeshing rotors. A turbomolecular pump can generate a vacuum of at least 10-3 mbar in thechamber 10. The flow rate of the gas stream from thechamber 10 is generally around 0.5 to 5 slm. - During the etching process, only a portion of the reactants will be consumed, and so the gas stream exhaust from the
outlet 16 of thechamber 10 will contain a mixture of the reactants, any unreactive noble gases supplied to the chamber, and by-products from the etch process. For example, the gas stream may contain a mixture of CxFyHz, O2, Ar, He, SiF4, and COF2. The etching process may include a number of different process steps, and so the composition of the gas stream exhaust from thechamber 10, and/or the relative proportions of the components of the gas stream, may vary with time. - As illustrated in the drawing, a stream of inert purge gas, such as helium or, as in this example, nitrogen, is supplied from a
source 20 thereof to the vacuum pumping arrangement, for example for increasing the longevity and effectiveness of dynamic shaft seals of the pump(s) 18, and/or for diluting the gas stream to reduce corrosion and degradation resulting from the pumping of aggressive, unconsumed gas molecules. Purge gas is generally added to the gas stream at a relatively high flow rate, for example around 40 to 50 slm, in comparison to the flow rate of gas from thechamber 10. The flow rate of purge gas to the vacuum pumping arrangement may be controlled using acontrol valve 21 located between the pump(s) 18 and thepurge gas source 20. - The gas stream exhaust from the vacuum pumping arrangement thus now contains nitrogen, in addition to gas exhaust from the
chamber 10. In order to remove some of the components from the gas stream, the gas stream is subsequently conveyed through afirst abatement device 22. Thefirst abatement device 22 may take any desired form, such as an incineration or thermal decomposition unit, for removing desired components from the gas stream. However, due to the requirement to provide a fuel gas for burning the gas stream within a thermal decomposition unit, the further dilution of the gas stream and the addition of moisture to the gas stream (which, without removal, would increase the corrosive nature of the gas stream), in the illustrated example thefirst abatement device 22 is provided in the form of a gas reactor column or other dry abatement device for removing SiF4, COF2 and the more reactive CxFyHz components from the gas stream. An example of a suitable gas reactor column is described inUS patent no. 5,213,767 , the contents of which are incorporated herein by reference. In overview, a gas reactor column contains a number of heated beds of material selected for the removal of particular components from the gas stream. In this example, the gas reactor column contains at least two heated stages, which may be conveniently provided within removable cartridges surrounded by an electrically heated furnace. A first stage contains heated granules of silicon for preheating the gas stream and converting the more reactive CxFyHz components into F2 and C, which either falls from the column in the form of soot or is converted into CO and CO2 by the O2 present within the gas stream. A second stage contains heated calcium oxide, preferably in the form of lime, for converting SiF4 into CaF2 and SiO2, and F2 into CaF2. The relatively unreactive gases in the gas stream, namely, in this example, the noble gases He, and Ar, N2 purge gas, the more stable CxF2x+2 components, such as CF4 and C2H6, CO and/or CO2 pass through the gas reactor column unchanged. - Whilst a single gas reactor column may be provided, two or more similar gas reactor columns may be provided in parallel. For example, where two gas reactor columns are provided, one or more valves may be disposed between the
vacuum pump 18 and the gas reactor columns to enable the gas stream to be directed to one gas reactor column while the other gas reactor column is off-line, for example for replacement of one or more of the cartridges, or being subject to a purge using, for example, nitrogen gas. This enables the gas stream to be continuously treated. In this case, an arrangement of one or more valves is also provided downstream from the gas reactor columns to connect the outputs from the gas reactor columns to a common gas conduit. - As discussed above, the gas stream exhaust from the
first abatement device 22 typically contains, in this example, He, Ar, N2, one or more perfluorinated species, such as CF4 and C2F6, and one or both of CO2 and CO. In order to remove the remaining perfluorinated species from the gas stream, a second abatement device in the form of aplasma abatement device 24 is provided downstream from thefirst abatement device 22. Theplasma abatement device 24 is preferably a microwave plasma abatement device, although other forms of plasma abatement device, such as a dc torch, may be used. - Due to the presence of a relatively large proportion of purge gas within the gas stream exhaust from the
first abatement device 22 in comparison to the perfluorinated species, to reduce the energy requirement of theplasma abatement device 24 the rate at which gas flows through theplasma abatement device 24 is reduced in comparison the rate at which the gas stream is exhaust from thefirst abatement device 22. In the illustrated example, abranch 26 is located between thefirst abatement device 22 and theplasma abatement device 24 for receiving the gas stream from thefirst abatement device 22 and splitting the gas stream into first and second portions. The first portion of the gas stream is conveyed to theplasma abatement device 24 through avariable control valve 28 or other device for controlling the flow rate of gas into theplasma abatement device 24. The second portion of the gas stream is diverted away from theplasma abatement device 24, and is conducted bygas conduit 30 back to the vacuum pumping arrangement for forming at least part of the purge gas supplied to the vacuum pumping arrangement. In this example, the diverted portion of the gas stream is added to the stream of fresh purge gas supplied from thesource 20. Alternatively, the diverted portion of the gas stream may be supplied separately to the vacuum pumping arrangement, either upstream, downstream or between stages of the pump(s) 18. As illustrated, aheat exchanger 32 and acompressor 34 may be provided in thegas conduit 30 for respectively cooling and compressing the diverted portion of the gas stream prior to its return to the vacuum pumping arrangement. - By diverting a portion of the gas stream away from the
plasma abatement device 24, the flow rate of gas entering theplasma abatement device 24 can be significantly reduced, thereby enhancing the destruction efficiency of theplasma abatement device 24. With time, the concentration of the perfluorinated species in the first portion of the gas stream will increase, and this can improve the destruction efficiency of theplasma abatement device 24. - Furthermore, by returning the diverted portion to the gas stream as a purge gas for the
vacuum pump 18, the flow rate of fresh purge gas to thevacuum pump 18 can be significantly reduced, for example usingcontrol valve 21. For example, by diverting around 75% of the gas stream away from theplasma abatement device 24, the amount of fresh purge gas supplied to thevacuum pump 18 can be reduced by 75%. - Returning to
Figure 1 , theplasma abatement device 24 converts the perfluorinated species within the first portion of the gas stream into species such as CO2 and HF that can be removed from the gas stream by awet scrubber 36 or other similar abatement device located downstream from theplasma abatement device 24. - In the second and third embodiments illustrated in
Figures 2 and3 , theplasma abatement device 24 is used to treat gas streams exhaust from a plurality of chambers 10 (two shown inFigure 2 for clarity purposes only). In the second embodiment illustrated inFigure 2 , the gas stream exhaust from eachchamber 10 passes through a respectivevacuum pumping arrangement 18 andfirst abatement device 22 before being split into first and second portions atrespective branches 26. As in the first embodiment, each second potion is diverted away from theplasma abatement device 24 and returned to a respective vacuum pumping arrangement viarespective conduit 30. The non-diverted first portions of the gas streams are combined atmanifold 40, and conveyed to theplasma abatement device 24 for the removal of perfluorinated species therefrom. In the third embodiment illustrated inFigure 3 , the gas streams exhaust from the vacuum pumping arrangements of thechambers 10 are combined at a manifold 50 located upstream fromfirst abatement device 22. The combined gas streams are treated in thefirst abatement device 22 before being split into first and second portions atbranch 26. As in the first embodiment, the first portion of the combined gas streams is conveyed to theplasma abatement device 24 for the removal of perfluorinated species therefrom. The second portion of the combined gas streams is conveyed byconduit 30 throughheat exchanger 32 andcompressor 34 before being split atbranch 52 into two similar sub-streams, each of which is conveyed back to a respective vacuum pumping arrangement as in the first embodiment.
Claims (10)
- A method of treating a gas stream exhaust from a chamber, the method comprising the steps of adding to the gas stream a purge gas for a vacuum pump (18) for pumping the gas stream from the chamber and characterised in that the method further comprises the steps of :removing a first species from the gas stream using a first abatement device (22); splitting the gas stream into first and second portions;removing a second species from the first portion of the gas stream using a second, plasma abatement device (24), and returning the second portion of the gas stream to the pump (18).
- A method according to Claim 1, wherein the second portion of the gas stream is added to the purge gas.
- A method according to Claim 1 or Claim 2, wherein the first species comprises a by-product from an etch process conducted in the chamber.
- A method according to any of Claims 1 to 3, wherein the gas stream exhaust from the plasma abatement device is conveyed to a third abatement device for removing a third species from the gas stream.
- A method according to Claim 4, wherein the third species is a by-product from the removal of the second species from the gas stream.
- Apparatus for treating a gas stream, the apparatus comprising a vacuum pump (18) and a plasma abatement device (24) located downstream from the vacuum pump for removing a perfluorinated species from the gas stream characterised in that the apparatus further comprises a first abatement device (22) for removing a first species from the gas stream upstream of the plasma abatement device (24), means (28, 30) for diverting a portion of the gas stream away from the plasma abatement device (24), and means (28, 30) for returning the diverted portion to the gas stream as a purge gas for the vacuum pump (18).
- Apparatus according to Claim 6, comprising a heat exchanger (32) for cooling the diverted portion of the gas stream prior to its return to the pump.
- Apparatus according to any of Claim 6 or Claim 7, comprising a compressor (34) for compressing the diverted portion of the gas stream prior to its return to the pump.
- Apparatus according to any of Claims 6 to 8, comprising an abatement device (22) for removing at least one species from the gas stream before said portion of the gas stream is diverted therefrom.
- Apparatus according to any of Claims 6 to 8, comprising an abatement device (22) such as a wet scrubber downstream from the plasma abatement device for removing from the gas stream a by-product from the removal of the perfluorinated species from the gas stream.
Applications Claiming Priority (2)
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GBGB0602506.8A GB0602506D0 (en) | 2006-02-08 | 2006-02-08 | Method of treating a gas stream |
PCT/GB2007/050012 WO2007091100A1 (en) | 2006-02-08 | 2007-01-12 | Method of treating a gas stream |
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EP1981618A1 EP1981618A1 (en) | 2008-10-22 |
EP1981618B1 true EP1981618B1 (en) | 2012-05-02 |
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EP07700419A Active EP1981618B1 (en) | 2006-02-08 | 2007-01-12 | Method of treating a gas stream |
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JP (1) | JP5172707B2 (en) |
KR (1) | KR101321265B1 (en) |
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AT (1) | ATE555843T1 (en) |
GB (1) | GB0602506D0 (en) |
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GB0523947D0 (en) * | 2005-11-24 | 2006-01-04 | Boc Group Plc | Microwave plasma system |
CN101939079B (en) * | 2008-02-05 | 2013-06-12 | 应用材料公司 | Systems and methods for treating flammable effluent gases from manufacturing processes |
FR2981705B1 (en) * | 2011-10-19 | 2013-11-22 | Adixen Vacuum Products | DEVICE FOR PUMPING AND PROCESSING GASES |
KR20140107758A (en) | 2013-02-28 | 2014-09-05 | 삼성전자주식회사 | Byproducts treator and method of treating byproducts in a process and an equipment for manufacturing semiconductor devices having the byproducts treator |
JP6153754B2 (en) * | 2013-03-28 | 2017-06-28 | 株式会社荏原製作所 | Vacuum pump with abatement function |
WO2015134197A1 (en) * | 2014-03-06 | 2015-09-11 | Applied Materials, Inc. | Plasma abatement of compounds containing heavy atoms |
GB2588906A (en) * | 2019-11-13 | 2021-05-19 | Edwards Ltd | Gas purged valve |
GB2597545A (en) * | 2020-07-28 | 2022-02-02 | Edwards Ltd | A noble gas recovery system |
US11603313B2 (en) * | 2021-05-11 | 2023-03-14 | Praxair Technology, Inc. | Method for pretreating and recovering a rare gas from a gas contaminant stream exiting an etch chamber |
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GB8813270D0 (en) * | 1988-06-04 | 1988-07-06 | Plasma Products Ltd | Dry exhaust gas conditioning |
JP3553310B2 (en) * | 1997-03-11 | 2004-08-11 | 株式会社荏原製作所 | Evacuation system |
EP1048337A1 (en) * | 1999-04-28 | 2000-11-02 | Air Products And Chemicals, Inc. | Recovery of perfluorinated compounds from the exhaust of semiconductors fabrications with recycle of vaccum pump dilutent |
JP4796733B2 (en) * | 2000-05-29 | 2011-10-19 | 株式会社アドテック プラズマ テクノロジー | Gas decomposition apparatus and plasma equipment using the same |
US6576573B2 (en) | 2001-02-09 | 2003-06-10 | Advanced Technology Materials, Inc. | Atmospheric pressure plasma enhanced abatement of semiconductor process effluent species |
JP4549563B2 (en) * | 2001-03-22 | 2010-09-22 | 三菱電機株式会社 | Halogen-containing gas treatment equipment |
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CN101410167A (en) | 2009-04-15 |
KR101321265B1 (en) | 2013-10-25 |
EP1981618A1 (en) | 2008-10-22 |
TW200732502A (en) | 2007-09-01 |
WO2007091100A1 (en) | 2007-08-16 |
JP2009525861A (en) | 2009-07-16 |
KR20080100214A (en) | 2008-11-14 |
JP5172707B2 (en) | 2013-03-27 |
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