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EP1943553A1 - Procédé et appareil permettant de contrôler la biréfringence du guide d ondes par la sélection d une largeur de coeur de guide d ondes pour une gaine optique supérieure - Google Patents

Procédé et appareil permettant de contrôler la biréfringence du guide d ondes par la sélection d une largeur de coeur de guide d ondes pour une gaine optique supérieure

Info

Publication number
EP1943553A1
EP1943553A1 EP05809922A EP05809922A EP1943553A1 EP 1943553 A1 EP1943553 A1 EP 1943553A1 EP 05809922 A EP05809922 A EP 05809922A EP 05809922 A EP05809922 A EP 05809922A EP 1943553 A1 EP1943553 A1 EP 1943553A1
Authority
EP
European Patent Office
Prior art keywords
waveguide
top cladding
substrate
waveguide grating
polarization dependent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05809922A
Other languages
German (de)
English (en)
Inventor
Farnaz Parhami
Liang Zhao
Fan Zhong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lightwave Microsystems Corp
Original Assignee
Lightwave Microsystems Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lightwave Microsystems Corp filed Critical Lightwave Microsystems Corp
Publication of EP1943553A1 publication Critical patent/EP1943553A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
    • G02B6/12026—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by means for reducing the temperature dependence
    • G02B6/1203—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by means for reducing the temperature dependence using mounting means, e.g. by using a combination of materials having different thermal expansion coefficients
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
    • G02B6/12023—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by means for reducing the polarisation dependence, e.g. reduced birefringence
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/126—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/121—Channel; buried or the like

Definitions

  • the present invention relates generally to methods and apparatus for controlling waveguide birefringence. More particularly, the present invention relates to controlling waveguide birefringence by the selection of a waveguide core width for a given top cladding.
  • PLC Planar lightwave circuit
  • a core layer typically lies between a top cladding layer and a bottom cladding layer and channel waveguides are often formed by at least partially removing (typically through an etching process) core material beyond the transverse limits of the channel waveguide and replacing it with at least one layer of side cladding material that has an index of refraction that is lower than that of the core material.
  • the side cladding material is usually the same material as the top cladding material.
  • Each layer is typically doped in a manner such that the core layer has a higher index of refraction than either the top cladding or bottom cladding.
  • the layers are typically deposited on a silicon wafer.
  • Deposition processes include chemical vapor deposition (CVD), low pressure chemical vapor deposition (LPCVD), and/or plasma-enhanced CVD (PECVD).
  • CVD chemical vapor deposition
  • LPCVD low pressure chemical vapor deposition
  • PECVD plasma-enhanced CVD
  • one or more of the optical layers of the slab waveguide and/or channel waveguide may comprise an optically transparent polymer.
  • spin coating is one known film deposition method.
  • a doped-silica waveguide is usually preferred because it has a number of attractive properties including low cost, low loss, low birefringence, stability, and compatibility for coupling to fiber.
  • the arrayed-waveguide grating router is an example of an integrated optical router.
  • An AWGR is a PLC having at least one input channel waveguide, an input planar waveguide, an arrayed-waveguide grating (AWG), an output planar waveguide, and at least one output channel waveguide.
  • an AWGR may comprise a plurality of output waveguides and a plurality of input waveguides.
  • AWGRs may be configured to perform a variety of functions, for instance, they may function as multiplexers, demultiplexers, or they may be configured to perform both functions.
  • Spectral transmissivity in units of dB is defined as the optical power (in units of dBm) of substantially monochromatic light that emerges from the fiber that is coupled to the input port minus the optical power (in units of dBm) of the light that enters the optical fiber that is coupled to the output port of the optical router.
  • Spectral transmissivity is a function of the selected input port, the selected output port, the optical wavelength, and the polarization state of the incident light.
  • the incident light When the incident light is in a polarization state called a "principal state of polarization," the light will be in the same polarization state when it emerges from the device.
  • a polarization state When the incident light is in a polarization state called a "principal state of polarization," the light will be in the same polarization state when it emerges from the device.
  • the principle states of polarization are assumed to be independent of wavelength, input port and output port. It is understood that the invention is not so limited by this assumption.
  • the two principal states of polarization are the so-called transverse electric (TE) and transverse magnetic (TM) polarization states.
  • the TE polarization state has an electric field that is predominantly aligned in the transverse direction and the TM polarization state has an electric field that is predominantly aligned in the lateral direction.
  • the invention is not so limited to devices having these principle states of polarization.
  • the TM spectral transmissivity is a replica of the TE spectral transmissivity that is shifted in wavelength by an amount that is referred to as the polarization dependent dispersion (PDD).
  • PDD is positive if the TM spectral transmissivity has a maximum that has a longer wavelength than the maximum of the TE spectral transmissivity and is negative otherwise.
  • PDW is defined as the absolute value of the PDD.
  • the polarization state of the light in the optical fiber may change in a manner that is uncontrolled and unpredictable.
  • a change in the polarization state of the light in the fiber as it enters an AWG will cause a change in the optical power that emerges from the AWG that may be as large as the value of polarization dependent loss (PDL) for the AWG.
  • PDW polarization dependent loss
  • top cladding material which reduces birefringence.
  • this may require specific compositions for the top cladding.
  • the top cladding material which usually covers the waveguides and substrate in an arrayed waveguide grating may determine in large part the resulting birefringence. However, given a top cladding composition, a width of the waveguide core may be pre-selected that provides a minimized birefringence, i.e., a zero, or near zero, polarization dependent wavelength.
  • a tuned top cladding is used to describe a pre-existing dopant concentration within a top cladding material.
  • the distribution of stress in the top cladding may be determined over a change in temperature. From this distribution of stress, a relationship may be determined between the polarization dependent wavelength and various widths of the waveguide in the arrayed waveguide grating. This relationship may determine a zero value, or near zero value, of polarization dependent wavelength for a given range of waveguide widths.
  • PDW is a polarization dependent wavelength change and the wavelength change preferably ranges from about 0 ⁇ 0.03 nm for the present invention to be optimized.
  • the width of the waveguide may be selected such that the polarization dependent wavelength is minimized accordingly.
  • waveguides and methods for manufacturing waveguides described include a top cladding layer having a dopant in the range of 3-6% by weight. It has been found that this particular dopant range provides desirable manufacturing characteristics, for example.
  • Fig. 1 shows a variation on a cross-section of a substrate upon which a representative waveguide and top cladding may be disposed.
  • Fig. 2 shows an example of a chart where bi-directional stresses
  • FIG. 3 shows an example of a chart where the resulting PDW (nm) is plotted against core width ( ⁇ m) to obtain a core width which may result in a PDW of zero.
  • Fig. 4 shows a flow chart of one variation on a method of determining a waveguide width for a given top cladding.
  • the top cladding material which usually covers the waveguides and substrate may determine in large part the resulting birefringence. However, given a top cladding composition, a width of the waveguide core may be preselected that provides a desired birefringence.
  • a top cladding which is "tuned” is used to describe a pre-existing dopant concentration within a top cladding material. That is, the top cladding is "tuned” to provide desired optical characteristics (such as a particular refractive index) but is not necessarily “tuned” to provide the lowest possible birefringence as described in Ojha et al. or A. Killian et al.
  • FIG. 1 A representative cross-section 10 of a substrate with a waveguide and top cladding is shown in Fig. 1.
  • cross-section 10 may have a substrate 12, upon which waveguide 20 and top cladding 22 may be disposed.
  • Substrate 12 may be comprised of up to several layers making up the substrate 12.
  • Layer 14 may be a layer of, e.g., undoped SiO 2 (silica), ranging in thickness from about 15-30 ⁇ m, but is preferably about 15 ⁇ m.
  • the thickness of a layer in this example is taken as the distance along the y-axis; likewise, the width of a layer in this example is taken as the distance along the x-axis.
  • a silicon substrate 16 may be placed upon layer 14 and preferably has a thickness of about 625 ⁇ m. Then layer 18 (lower cladding) may be deposited on silicon substrate 16 or formed by oxidizing the substrate in steam, for example. Layers 14 and 18 may be grown sequentially but are preferably grown simultaneously. Layer 18, like layer 14 may be comprised of, e.g., undoped SiO 2 (silica), and may likewise have a thickness ranging from about 15- 30 ⁇ m, but is also preferably about 15 ⁇ m. In other examples, the substrate may include a glass or quartz substrate.
  • a core layer may then be deposited on top of layer 18 using, e.g., standard silica deposition techniques such as flame hydrolysis or plasma- enhanced chemical vapor deposition (PECVD).
  • This core material may be comprised of, e.g., silica with a dopant such as Germanium and/or Phosphorus, and may preferably have a refractive index about 0.5-1% higher than the lower cladding 18 index.
  • the core material may comprise a variety of polymer materials such as optical grades of polyacrylates, polymethacrylates, polysilicone, polyimide, epoxy, polyurethane, polyolefin, polycarbonate, polyamides, polyesters, etc., as well as a various copolymers thereof, such as acrylate-methacrylates, acrylic-silicones, epoxy-urethanes, amide-imides, etc.
  • the core layer may range in thickness, h, from about 5-8 ⁇ m, but is preferably about 6 ⁇ m thick.
  • the core layer may be patterned using, e.g., photolithography and reactive ion etching, and an intermediate hard mask layer, such as chrome may be used, to define a waveguide core 20 preferably having a rectangular cross section.
  • Waveguide core 20 also has a width, w, which may be varied accordingly to reduce the birefringence, as described below in detail.
  • a silica top cladding layer 22 may be deposited on the structure.
  • top cladding 22 may be comprised of specified compositions to reduce birefringence, as discussed above, this may be an unreliable method because of the difficulty in producing a top cladding composition which yields the required physical properties.
  • a typical top cladding 22 may be comprised of, e.g., SiO 2 doped with Boron, but the concentration range of such dopants may be limited.
  • top cladding 22 is doped with, e.g., Boron, in a range of about 3-6% (wt.), which may provide adequate performance while exhibiting improved chemical stability of the material and hence easier, more robust manufacturing compared to dopant levels above or below the range of about 3-6% (wt.).
  • a concentration of Boron below about 3% may yield glass which is too viscous for manufacturing and a concentration of Boron above about 6% may yield to phase separation during manufacture, thereby causing the device to become more complicated to produce.
  • a concentration of dopant between 3-6% (wt.) can be utilized or optimized by adjusting the minimum allowable gap between waveguides, adjusting the annealing schedules (e.g., adding more incremental deposit-anneal steps to achieve top clad, or reducing the total thickness of reflowable top-clad), properties and geometries of core-etch, surface chemistry, diffusion rates, thermal history, etc..
  • Table 1 Example of material properties in a variation of a waveguide.
  • the layers of material are typically produced at elevated temperatures or they may require high temperature treatment to ensure homogeneity. Processing temperatures may be as high as about 900° C.
  • stresses may become induced into the waveguide core 20 because of the differing CTE values between, e.g., layer 18 and top cladding 22, thereby resulting in undesired birefringence in light carried through core 20.
  • varying the width, w, of the waveguide core 20 may be selected to reduce or eliminate birefringence for a given tuned top cladding 22 having a pre-existing dopant concentration.
  • the CTE mismatch from ambient temperature to a device operating temperature may typically be ignored for the purposes of the present invention because of the minimal effect such a temperature change may have.
  • a stress value may be induced within core 20 in its blanket form. This stress value is typically due to a CTE mismatch between the film and the substrate and may result in a curvature within the plane of the substrate. This curvature may be measured and from there, the stress in the core film may be calculated by the following equation (1):
  • ⁇ core stress value induced in core 20 by a curvature of substrate 16
  • R radius of curvature of a given wafer from which a device may be manufactured from according to the present invention
  • t core waveguide core 20 thickness, h.
  • E core elastic modulus of core 20
  • ⁇ T temperature range through which the materials undergo.
  • a stress value of top cladding 22 induced by CTE differences over the temperature range ⁇ T e.g., about 900° C from manufacturing/processing temperature to ambient temperature, may also be calculated.
  • top cladding 22 were doped with a high concentration, e.g., about 9% (wt.) of Boron, a tensile stress may be induced in top cladding 22; on the other hand, if top cladding 22 were doped with a low concentration, e.g., about 3% (wt.) of Boron, a compressive stress or zero load may be induced in top cladding 22.
  • equation (5) may be used:
  • ⁇ tc stress value induced in top cladding 22 by CTE differences between top cladding 22 and substrate 16; O 1 C - CTE of top cladding 22;
  • E tc elastic modulus of top cladding 22
  • ⁇ T temperature range through which the materials undergo.
  • top cladding 22 having a CTE of about, e.g, a* 4.0 x 10 "6 0 C "1 , may yield the following equation (7).
  • TM polarization states is a reason for the occurrence of PDW, as expressed in equation (8):
  • stress calculations and stress distributions may be complex and are preferably solved through the use of computer simulations, e.g., finite element modeling/analysis, which may account for geometry, differences in material properties, and external factors such as temperature changes and forces.
  • the stress distributions may be calculated over a range of varying core 20 widths, w, e.g., widths up to 11 ⁇ m and up. That is, thermal stress distributions in waveguide core 20 and surrounding cladding 22 may be calculated for each core 20 width over a range of widths.
  • an index distribution may be calculated according to the following equations (11) and (12):
  • properties such as refractive index can have complex distributions throughout a device and may be solved through computer simulation of the geometry, refractive indices, and absorption of the waveguide and cladding, as well as index change mechanisms, e.g. temperature changes, using commonly available photonic software such as BeamPROP, made by RSoft, Inc. of Ossining, NY. From such software tools and from the stress results and stress distributions, the effective refractive index may be found. With the results of refractive index distribution according to equations (11) and (12), the effective refractive index ⁇ may be calculated using, e.g., the BeamPROP simulation. This may be performed at least once for the TE mode (n x distribution) and at least once for the TM mode (n y distribution). Once the results of /? TM and /3 TE have been calculated, PDW may finally be calculated with equation (10).
  • Fig. 3 illustrates the relationship in chart 40 between PDW (in nm) and core width (in ⁇ m) for a top cladding having several different CTE values.
  • Curve 42 represents a variation where a top cladding 22 has a CTE of about 4.0 x 10 6 0 C '1 and a resulting ⁇ lc equal to about 20 MPa for a ⁇ T of about 900° C.
  • Curve 46 represents another variation where top cladding 22 CTE is about 3.6 x 10 "6 0 C "1 and a resulting ⁇ tc equal to about 4 MPa.
  • curve 48 represents yet another variation where the CTE of top cladding 22 is about 3.2 x 10 "6 0 C "1 and a resulting ⁇ tc equal to about -12 MPa.
  • CTE is about 3.2 x 10 "6 0 C "1
  • ⁇ tc equal to about -12 MPa.
  • PDW generally increases.
  • Data points 44 represent experimental results and are shown to show the close approximation and validity of the methods described above.
  • Boundary 50 represents a state where PDW is zero. Accordingly, for every top cladding 22 process, e.g., a high Boron concentration and high CTE or a low Boron concentration and low CTE, a corresponding width, w, for waveguide core 20, such as the width corresponding to intersection 52, may be found that results in a zero PDW state.
  • the distribution of stress in a top cladding over a change in temperature may be determined. From the distribution of stress, a relationship may be determined between polarization dependent wavelength and a width of the waveguide in the arrayed waveguide grating. From this relationship, the width of the waveguide may be selected such that the polarization dependent wavelength is minimized or reduced to a desired value to compensate for birefringence.
  • a flow chart 60 is shown in Fig. 4 for one variation on a method of determining waveguide width for a given top cladding.
  • Operation 62 may begin by determining an elastic modulus of each of the constituent layers, e.g., layers 14 to 22. This may be accomplished by measuring the modulus directly. Operation 64 may follow where a stress value may be determined in each of the layers, e.g., layers 14 to 22. In operation 66, the CTE values of each of the layers may be calculated by a method as described above. Operation 68 may follow where a stress distribution may be calculated in, e.g., core 20 and top cladding 22, for various core widths, w, to determine a thermal residual stress distribution due in part to CTE mismatches between different material types. Such calculations may be performed by computer simulations using, e.g., finite element modeling/analysis tools.
  • Operation 70 may follow where the stress distribution calculated in operation 68 may be mapped into an index distribution using a conventional stress optic coefficient.
  • the index distribution may be determined by any of the methods as described above.
  • Operation 72 may follow where an effective index of core 20 and top cladding 22 may be determined by simulations using, e.g., photonic software such as BeamPROP. From the results of operation 72, a PDW may be calculated in operation 74 by a method as described above.
  • Operation 76 may follow where a relationship between PDW and various core widths, w, may be determined by, e.g., plotting the results on a chart as described above. An appropriate core width may accordingly be selected in which PDW is minimized, i.e., results in zero, or near zero within about 3%, PDW for any given top cladding material by utilizing the methods described above.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

La présente invention se rapporte à un procédé et un appareil permettant de contrôler la biréfringence d’un guide d’ondes par la sélection d’une largeur de coeur de guide d’ondes pour une gaine optique supérieure accordée. Dans un exemple, la densité des atomes dopants à l’intérieur d’un matériau de gaine optique supérieure se situe entre 3-6 % (du poids). Étant donné une composition de gaine optique supérieure accordée, une largeur de coeur est présélectionnée pour le guide d’ondes de sorte que la biréfringence soit minimisée, à savoir, qu’elle atteigne zéro ou une valeur proche de zéro. La largeur désirable du coeur du guide d’ondes est déterminée en calculant la distribution de la tension dans la gaine optique supérieure pendant un changement de température. À partir de cette distribution de la tension, une relation entre la longueur d’ondes dépendante de la polarisation et les largeurs variables du guide d’ondes dans le réseau sélectif planaire sont déterminées. Cette relation détermine une valeur zéro ou une valeur proche de zéro, de longueur d’ondes dépendante de la polarisation pour une gamme de largeurs de guides d’ondes données. Ainsi, la largeur du guide d’ondes peut être sélectionnée de sorte que la longueur d’ondes dépendante de la polarisation soit minimisée.
EP05809922A 2005-10-11 2005-10-11 Procédé et appareil permettant de contrôler la biréfringence du guide d ondes par la sélection d une largeur de coeur de guide d ondes pour une gaine optique supérieure Withdrawn EP1943553A1 (fr)

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PCT/US2005/036628 WO2007044010A1 (fr) 2005-10-11 2005-10-11 Procédé et appareil permettant de contrôler la biréfringence du guide d’ondes par la sélection d’une largeur de coeur de guide d’ondes pour une gaine optique supérieure

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EP1943553A1 true EP1943553A1 (fr) 2008-07-16

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US7609917B2 (en) 2005-10-11 2009-10-27 Lightwave Microsystems Corporation Method and apparatus for controlling waveguide birefringence by selection of a waveguide core width for a top cladding
CN104991309B (zh) * 2015-04-29 2018-10-02 南京邮电大学 一种补偿阵列波导光栅偏振敏感性的方法
JP2017142423A (ja) * 2016-02-12 2017-08-17 古河電気工業株式会社 基板、光導波路素子、基板の製造方法、および光導波路素子の製造方法

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AUPR368201A0 (en) * 2001-03-13 2001-04-12 Redfern Integrated Optics Pty Ltd Silica-based optical device fabrication
US6850670B2 (en) * 2001-06-28 2005-02-01 Lightwave Microsytstems Corporation Method and apparatus for controlling waveguide birefringence by selection of a waveguide core width for a top clad

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