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EP1528432B1 - Appareil lithographique et méthode de fabrication d'un dispositif - Google Patents

Appareil lithographique et méthode de fabrication d'un dispositif Download PDF

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Publication number
EP1528432B1
EP1528432B1 EP20040256584 EP04256584A EP1528432B1 EP 1528432 B1 EP1528432 B1 EP 1528432B1 EP 20040256584 EP20040256584 EP 20040256584 EP 04256584 A EP04256584 A EP 04256584A EP 1528432 B1 EP1528432 B1 EP 1528432B1
Authority
EP
European Patent Office
Prior art keywords
gas
substrate
lithographic apparatus
projection system
seal member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP20040256584
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German (de)
English (en)
Other versions
EP1528432A1 (fr
Inventor
Christiaan Alexander Hoogendam
Erik Roelof Loopstra
Bob Streefkerk
Bernard Gellrich
Andreas Wurmbrand
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
ASML Netherlands BV
Original Assignee
Carl Zeiss SMT GmbH
ASML Netherlands BV
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Publication date
Application filed by Carl Zeiss SMT GmbH, ASML Netherlands BV filed Critical Carl Zeiss SMT GmbH
Priority to EP20040256584 priority Critical patent/EP1528432B1/fr
Publication of EP1528432A1 publication Critical patent/EP1528432A1/fr
Application granted granted Critical
Publication of EP1528432B1 publication Critical patent/EP1528432B1/fr
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Definitions

  • the present invention relates to a lithographic apparatus.
  • a lithographic apparatus is a machine that applies a desired pattern onto a target portion of a substrate.
  • Lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs).
  • a patterning means such as a mask, may be used to generate a circuit pattern corresponding to an individual layer of the IC, and this pattern can be imaged onto a target portion (e.g. comprising part of, one or several dies) on a substrate (e.g. a silicon wafer) that has a layer of radiation-sensitive material (resist).
  • a single substrate will contain a network of adjacent target portions that are successively exposed.
  • lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion in one go, and so-called scanners, in which each target portion is irradiated by scanning the pattern through the projection beam in a given direction (the "scanning"-direction) while synchronously scanning the substrate parallel or anti-parallel to this direction.
  • liquid supply system to provide liquid on only a localized area of the substrate and in between the final element of the projection system and the substrate using a liquid confinement system (the substrate generally has a larger surface area than the final element of the projection system).
  • a liquid confinement system the substrate generally has a larger surface area than the final element of the projection system.
  • liquid is supplied by at least one inlet IN onto the substrate, preferably along the direction of movement of the substrate relative to the final element, and is removed by at least one outlet OUT after having passed under the projection system. That is, as the substrate is scanned beneath the element in a -X direction, liquid is supplied at the +X side of the element and taken up at the -X side.
  • Figure 2 shows the arrangement schematically in which liquid is supplied via inlet IN and is taken up on the other side of the element by outlet OUT which is connected to a low pressure source.
  • the liquid is supplied along the direction of movement of the substrate relative to the final element, though this does not need to be the case.
  • Figure 3 shows the arrangement schematically in which liquid is supplied via inlet IN and is taken up on the other side of the element by outlet OUT which is connected to a low pressure source.
  • the liquid is supplied along the direction of movement of the substrate relative to the final element, though this does not need to be the case.
  • Figure 3 shows the arrangement schematically in which liquid is supplied via inlet IN and is taken up on the other side of the element by outlet OUT which is connected to a low pressure source.
  • Another solution which has been proposed is to provide the liquid supply system with a seal member which extends along at least a part of a boundary of the space between the final element of the projection system and the substrate table.
  • the seal member is substantially stationary relative to the projection system in the XY plane though there may be some relative movement in the Z direction (in the direction of the optical axis).
  • a seal is formed between the seal member and the surface of the substrate.
  • the seal is a contactless seal such as a gas seal.
  • WO 2004/055803 and EP 1 420 298 which belong to the prior art according to Article 54(3) EPC, disclose a lithographic apparatus in which an immersion liquid fills a space between the final element of the projection system and the substrate and a gas seal which provides a gas flow used to confine the immersion liquid extends along the boundary of said space.
  • the humid air above (where down is the direction of propagation of the projection beam) the liquid is thus confined to a small volume relative to the projection apparatus and there is no rigid connection between parts of the apparatus so relative movement between parts of the apparatus can occur freely.
  • the gas used should be clean and dry to avoid damage to the apparatus and to absorb the humidity.
  • the gas flow means is preferably comprises a vacuum source, which may also remove contaminants from the system.
  • the contaminants removed can be solid particles (which could damage the apparatus by scratching it), liquid particles or gaseous particles other than the gas itself.
  • the vacuum source may comprise a vacuum chamber with an annular inlet, the projection system being arranged at the center of said annulus.
  • the gas flow means comprises a passage through which said flow of gas flows.
  • the passage therefore bounds the volume of humid gas and the clean, dry gas flowing through the passage prevents the humid gas from escaping.
  • the passage may be formed at least partly by part of the projection system and the gas flow means.
  • the projection system may further comprise a lens cover, the lens cover forming said part of said passage, said lens cover being joined to the rest of the projection system by a lens seal.
  • the lens cover thus provides an airtight cover to the projection system, preventing humid air from entering the projection system.
  • the lens seal should be flexible and is preferably a glue. Relative movement between parts of the apparatus is therefore not compromised.
  • the liquid supply system comprises a seal member extending along at least part of the boundary of said space between the final element of said projection system and said substrate table wherein said gas flow means is arranged so that said flow of gas is between said seal member and said projection system. Due to the presence of the gas flow means relative movement between the seal member and the projection system can take place.
  • the apparatus is preferably arranged so that the gas flow means is arranged between the projection system and said seal member.
  • the seal member optionally comprises a gas seal means for forming a gas seal between said seal member and the surface of said substrate. The humid air is therefore confined by the substrate, gas seal means, the seal member, the gas flow means and the projection system.
  • the seal member is mounted onto the base frame of the lithographic projection apparatus.
  • the seal member is preferably movable relative to the base frame in the Z, Rx and Ry directions (where the Z direction is the direction of propagation of the projection beam) but fixed in all other directions.
  • the invention could easily be used with the liquid supply system illustrated in Figs 2 and 3 . Additional inlets and outlets arranged in the space above the immersion liquid would generate a gas flow which would absorb the immersion fluid from the gaseous space above the immersion liquid.
  • lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, liquid-crystal displays (LCDs), thin-film magnetic heads, etc.
  • LCDs liquid-crystal displays
  • any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or "target portion”, respectively.
  • the substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist) or a metrology or inspection tool.
  • the disclosure herein may be applied to such and other substrate processing tools.
  • the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
  • UV radiation e.g. having a wavelength of 365, 248, 193, 157 or 126 nm.
  • patterning means used herein should be broadly interpreted as referring to means that can be used to impart a projection beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the projection beam may not exactly correspond to the desired pattern in the target portion of the substrate. Generally, the pattern imparted to the projection beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
  • Patterning means may be transmissive or reflective.
  • Examples of patterning means include masks, programmable mirror arrays, and programmable LCD panels.
  • Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types.
  • An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions; in this manner, the reflected beam is patterned.
  • the support structure may be a frame or table, for example, which may be fixed or movable as required and which may ensure that the patterning means is at a desired position, for example with respect to the projection system. Any use of the terms "reticle” or “mask” herein may be considered synonymous with the more general term "patterning means”.
  • projection system used herein should be broadly interpreted as encompassing various types of projection system, including refractive optical systems, reflective optical systems, and catadioptric optical systems, as appropriate for example for the exposure radiation being used, or for other factors such as the use of an immersion fluid or the use of a vacuum. Any use of the term “lens” herein may be considered as synonymous with the more general term “projection system”.
  • the illumination system may also encompass various types of optical components, including refractive, reflective, and catadioptric optical components for directing, shaping, or controlling the projection beam of radiation, and such components may also be referred to below, collectively or singularly, as a "lens”.
  • the lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such "multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
  • Figure 1 schematically depicts a lithographic apparatus.
  • the apparatus comprises:
  • the apparatus is of a transmissive type (e.g. employing a transmissive mask).
  • the apparatus may be of a reflective type (e.g. employing a programmable mirror array of a type as referred to above).
  • the illuminator IL receives a beam of radiation from a radiation source SO.
  • the source and the lithographic apparatus may be separate entities, for example when the source is an excimer laser. In such cases, the source is not considered to form part of the lithographic apparatus and the radiation beam is passed from the source SO to the illuminator IL with the aid of a beam delivery system BD comprising for example suitable directing mirrors and/or a beam expander. In other cases the source may be integral part of the apparatus, for example when the source is a mercury lamp.
  • the source SO and the illuminator IL, together with the beam delivery system BD if required, may be referred to as a radiation system.
  • the illuminator IL may comprise adjusting means AM for adjusting the angular-intensity distribution of the beam.
  • adjusting means AM for adjusting the angular-intensity distribution of the beam.
  • the illuminator IL generally comprises various other components, such as an integrator IN and a condenser CO.
  • the illuminator provides a conditioned beam of radiation, referred to as the projection beam PB, having a desired uniformity and intensity distribution in its cross-section.
  • the projection beam PB is incident on the mask MA, which is held on the mask table MT. Having traversed the mask MA, the projection beam PB passes through the lens PL, which focuses the beam onto a target portion C of the substrate W.
  • the substrate table WT can be moved accurately, e.g. so as to position different target portions C in the path of the beam PB.
  • the first positioning means PM and another position sensor can be used to accurately position the mask MA with respect to the path of the beam PB, e.g. after mechanical retrieval from a mask library, or during a scan.
  • the mask table MT may be connected to a short stroke actuator only, or may be fixed.
  • Mask MA and substrate W may be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2.
  • a liquid reservoir 10 between the projection lens and the substrate is bounded by a gas seal 16 forming an annulus around the projection lens.
  • the gas seal 16 is formed by gas e.g. air or synthetic air but preferably N 2 or another inert gas, provided under pressure via inlet 15 to the gap between seal member 12 and substrate and extracted via first outlet 14.
  • the over pressure on the gas inlet 15, vacuum level on the first outlet 14 and geometry of the gap are arranged so that there is a high velocity air flow inwards that confines the liquid.
  • the distance between the gas inlet and outlet and substrate W is small.
  • the liquid reservoir is supplied with liquid by inlet 22 and extends above the bottom of the final element of the projection system PL. Excess liquid is removed via outlet 14.
  • the projection system also comprises a lens cover 35 attached to the main part of the projection system PL by a seal 40.
  • the seal 40 should be flexible to accommodate small relative movement between the main part of the projection system PL and the lens cover 35. Glues have been found to be particularly effective.
  • a vacuum chamber 34 with an inlet 33 is arranged in the volume above the reservoir 10.
  • the outside of the vacuum chamber 34 and lens cover 35 form a passage 32 along which gas flows towards vaccum chamber 34.
  • gas from all surrounding areas will flow towards the vacuum chamber 34.
  • the partial vapour pressure of the immersion fluid in the gas above the reservoir 10 is high, and the flow of gas along passage 32 prevents the humid gas from entering the projection system PL.
  • the gas flow will absorb humidity from surrounding gas so there is a gradient of humidity, the humidity of the gas decreasing away from the reservoir 10.
  • delicate parts of the apparatus such as mirrors for the interferometer beams are arranged in a dry part of the apparatus so humidity doesn't affect the measurements.
  • glue is used as seal 40 the dry, flowing gas will ensure that the glue remains dry and therefore an airtight seal is maintained. Keeping the glue 40 dry also prevents it from expanding and thus generating forces which may deform the projection system.
  • the vacuum chamber 34 can be independent of the projection system as in the example above, or can be part of the projection system PL, or part of the seal member 12 and in any of these circumstances may be actuatable in the z direction.
  • the example here is of a vacuum chamber i.e. an underpressure generating a gas flow, the gas flow means could equally comprise an overpressure.
  • a system as described above could also be used in conjunction with the liquid supply system shown in Figures 2 and 3 , the vacuum chamber 34 and passage 32 being arranged above the inlets IN and outlets OUT.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Claims (14)

  1. Un appareil lithographique comprenant :
    - un système d'illumination (IL) destiné à fournir un faisceau de projection (PB) de rayonnement ;
    - une structure formant support (MT) destinée à servir de support à un moyen pour conformer selon un motif (MA), le moyen pour conformer selon un motif servant à conférer au faisceau de projection (PB) un motif dans sa coupe transversale ;
    - une table porte-substrat (WT) destinée à porter un substrat (W) ;
    - un système de projection (PL) destiné à projeter le faisceau à motif (PB) sur une portion cible du substrat (W) ;
    - un système d'alimentation en liquide arrangé pour remplir au moins en partie un espace entre l'élément final dudit système de projection (PL) et ledit substrat (W) de liquide d'immersion ; et
    - un élément d'étanchéité (12) s'étendant le long d'au moins une partie du pourtour dudit espace ;
    où l'appareil comprend de plus un moyen servant à l'écoulement de gaz (34) arrangé pour fournir un écoulement de gaz en direction dudit liquide d'immersion et arrangé pour empêcher le gaz au dessus de et en contact avec ledit liquide d'immersion de s'échapper au-delà dudit moyen servant à l'écoulement de gaz, où ledit moyen servant à l'écoulement de gaz est arrangé de sorte que ledit écoulement de gaz soit entre ledit élément d'étanchéité (12) et ledit système de projection (PL).
  2. Un appareil lithographique selon la revendication 1 où ledit moyen servant à l'écoulement de gaz comprend une source de vide.
  3. Un appareil lithographique selon la revendication 2 où ledit vide est arrangé pour retirer ledit gaz en contact avec ledit liquide d'immersion.
  4. Un appareil lithographique selon soit la revendication 2, soit la revendication 3 où ledit vide est aussi arrangé pour retirer des contaminants dudit gaz en contact avec ledit liquide d'immersion.
  5. Un appareil lithographique selon une quelconque des revendications 2 à 4 où ladite source de vide comprend une chambre à vide (34) présentant un orifice d'entrée annulaire, ledit système de projection (PL) étant arrangé au centre dudit anneau.
  6. Un appareil lithographique selon une quelconque des revendications précédentes où ledit moyen servant à l'écoulement de gaz comprend un passage (32) dans lequel ledit écoulement de gaz s'écoule.
  7. Un appareil lithographique selon la revendication 6 où ledit passage (32) est formé au moins en partie par ledit système de projection (PL) et ledit moyen servant à l'écoulement de gaz.
  8. Un appareil lithographique selon la revendication 7 où ledit système de projection (PL) comprend de plus un couvercle de lentille (35), le couvercle de lentille formant ladite partie dudit passage (32), ledit couvercle de lentille étant joint au reste du système de projection par un joint de lentille (40).
  9. Un appareil lithographique selon la revendication 8, où ledit joint de lentille (40) est flexible.
  10. Un appareil lithographique selon soit la revendication 8, soit la revendication 9, où ledit joint de lentille (40) est de la colle.
  11. Un appareil lithographique selon la revendication 1, où ledit élément d'étanchéité (12) comprend de plus un moyen d'étanchéité au gaz destiné à former un joint de gaz (16) entre ledit élément d'étanchéité (12) et la surface dudit substrat (W).
  12. Un appareil lithographique selon la revendication 11, où ledit élément d'étanchéité (12) est monté sur un cadre de base.
  13. Un appareil lithographique selon la revendication 12, où ledit élément d'étanchéité (12) est déplaçable par rapport audit cadre de base dans les directions Z, Rx et Ry et fixe dans toutes les autres directions.
  14. Un procédé de fabrication de dispositif comprenant :
    - fournir un substrat (W) ;
    - fournir un faisceau de projection (PB) de rayonnement à l'aide d'un système d'illumination (IL) ;
    - utiliser un moyen pour conformer selon un motif (MA) afin de conférer au faisceau de projection un motif dans sa coupe transversale ;
    - fournir un liquide entre un élément final d'un système de projection (PL) utilisé dans ladite étape de projection et ledit substrat (W) en remplissant au moins partiellement un espace entre l'élément final et le substrat de liquide d'immersion ;
    - fournir un élément d'étanchéité (12) s'étendant le long d'au moins une partie du pourtour dudit espace ; et
    - projeter le faisceau de rayonnement à motif sur une portion cible du substrat (W),
    - fournir un écoulement de gaz à partir d'un moyen servant à l'écoulement de gaz pour qu'il s'écoule dans l'espace au dessus dudit liquide d'immersion en direction du liquide d'immersion afin d'empêcher le gaz au dessus de et en contact avec ledit liquide d'immersion de s'échapper au-delà dudit moyen servant à l'écoulement de gaz, où ledit moyen servant à l'écoulement de gaz est arrangé de sorte que ledit écoulement de gaz soit entre ledit élément d'étanchéité (12) et ledit système de projection (PL).
EP20040256584 2003-10-28 2004-10-26 Appareil lithographique et méthode de fabrication d'un dispositif Expired - Lifetime EP1528432B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP20040256584 EP1528432B1 (fr) 2003-10-28 2004-10-26 Appareil lithographique et méthode de fabrication d'un dispositif

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP03256809 2003-10-28
EP03256809 2003-10-28
EP20040256584 EP1528432B1 (fr) 2003-10-28 2004-10-26 Appareil lithographique et méthode de fabrication d'un dispositif

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EP1528432A1 EP1528432A1 (fr) 2005-05-04
EP1528432B1 true EP1528432B1 (fr) 2010-03-10

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8953143B2 (en) * 2009-04-24 2015-02-10 Nikon Corporation Liquid immersion member
CN112684666B (zh) * 2020-12-25 2024-02-09 浙江启尔机电技术有限公司 一种抑制气液两相流压力脉动和振动的浸液供给回收装置

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* Cited by examiner, † Cited by third party
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JP3817836B2 (ja) * 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
AU2003218015A1 (en) * 2002-03-06 2003-09-22 E.I. Du Pont De Nemours And Company Fluorine-containing compounds with high transparency in the vacuum ultraviolet
EP1420298B1 (fr) 2002-11-12 2013-02-20 ASML Netherlands B.V. Appareil lithographique
KR100967835B1 (ko) 2002-12-13 2010-07-05 코닌클리케 필립스 일렉트로닉스 엔.브이. 층상 스폿 조사 방법 및 장치에서의 액체 제거

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