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EP1461829B2 - Dual cure b-stageable underfill for wafer level - Google Patents

Dual cure b-stageable underfill for wafer level Download PDF

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Publication number
EP1461829B2
EP1461829B2 EP02805072.2A EP02805072A EP1461829B2 EP 1461829 B2 EP1461829 B2 EP 1461829B2 EP 02805072 A EP02805072 A EP 02805072A EP 1461829 B2 EP1461829 B2 EP 1461829B2
Authority
EP
European Patent Office
Prior art keywords
composition
curing
underfill
compounds
imidazole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP02805072.2A
Other languages
German (de)
French (fr)
Other versions
EP1461829A2 (en
EP1461829B1 (en
Inventor
Bodan Ma
Sun-Hee Lehmann
Quinn K. Tong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Henkel AG and Co KGaA
Original Assignee
Henkel AG and Co KGaA
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Filing date
Publication date
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Application filed by Henkel AG and Co KGaA filed Critical Henkel AG and Co KGaA
Publication of EP1461829A2 publication Critical patent/EP1461829A2/en
Application granted granted Critical
Publication of EP1461829B1 publication Critical patent/EP1461829B1/en
Publication of EP1461829B2 publication Critical patent/EP1461829B2/en
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • HELECTRICITY
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
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    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
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    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83856Pre-cured adhesive, i.e. B-stage adhesive
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    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/157Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747Copper [Cu] as principal constituent

Definitions

  • This invention relates to B-stageable underfill compositions suitable for application to a silicon wafer before singulation.
  • the compositions contain two separately curing chemistries.
  • Microelectronic devices contain millions of electrical circuit components that are electrically connected to each other and electrically connected to and mechanically supported on a carrier or a substrate. The connections are made between electrical terminations on the electronic component and corresponding electrical terminations on the substrate.
  • One method for making these interconnections uses polymeric or metallic material that is applied in bumps to the component or substrate terminals.
  • the terminals are aligned and contacted together and the resulting assembly is heated to reflow the metallic or polymeric material and solidify the connection.
  • the electronic assembly is subjected to cycles of elevated and lowered temperatures. Due to the differences in the coefficient of thermal expansion for the electronic component, the interconnect material, and the substrate, this thermal cycling can stress the components of the assembly and cause it to fail. To prevent failure, the gap between the component and the substrate is filled with a polymeric encapsulant, hereinafter called underfill or underfill encapsulant, to reinforce the interconnect material and to absorb some of the stress of the thermal cycling.
  • underfill or underfill encapsulant a polymeric encapsulant
  • CSP chip scale packages
  • the underfill dispensing and curing take place after the reflow of the metallic or polymeric interconnect.
  • the interconnect is a metal solder composition
  • a fluxing agent initially is applied on the metal terminal pads on the substrate.
  • the semiconductor chip is placed on the fluxed area of the soldering site.
  • the assembly is then heated to allow for reflow of the solder joint, or reflow of the polymeric interconnect.
  • a measured amount of underfill is dispensed along one or more peripheral sides of the electronic assembly and capillary action within the component-to-substrate gap draws the material inward.
  • additional underfill encapsulant may be dispensed along the complete assembly periphery to help reduce stress concentrations and prolong the fatigue life of the assembled structure.
  • the underfill encapsulant is subsequently cured to reach its optimized final properties.
  • the underfill is dispensed onto the substrate.
  • a bumped chip is placed active-face down on the underfill and the assembly heated to establish the solder or polymeric interconnections and cure the underfill.
  • the underfill In order to be useful as a wafer level underfill encapsulant, the underfill must have several properties. The material must be easy to apply uniformly on the wafer so that the entire wafer has a consistent coating. During the final attachment of the individual chips to a substrate, the underfill must flow to enable fillet formation, flux the solder bumps if solder was used and provide good adhesion. Whether the interconnection of the chip to the substrate is made with solder or with polymeric material, curing of the underfill should occur after the interconnection is formed and should occur rapidly.
  • the underfill must be able to be solidified after application to the wafer so as not to interfere with the clean dicing of the wafer into individual chips.
  • the solidification of the underfill encapsulant is done by a process called B-staging, which means that the underfill material undergoes an initial heating after its placement on the wafer to result in a smooth, non-tacky coating without residual solvent.
  • the starting underfill material is a solid
  • the solid is dispersed or dissolved in a solvent to form a paste and the paste applied to the wafer.
  • the underfill is then heated to evaporate the solvent, leaving a solid, but uncured, underfill on the wafer.
  • the starting underfill material is a liquid or paste
  • the underfill is dispensed onto the wafer and heated to partially cure it to a solid state.
  • the B-stage heating typically occurs at a temperature lower than 150°C, preferably within the range of about 100°C to about 150°C.
  • the final curing of the underfill encapsulant must be delayed until after solder fluxing (when solder is the interconnect material) and the forming of the interconnection, which occurs at a temperature of 183°C in the case of tin-lead eutectic solder.
  • This invention is an underfill composition
  • two chemical compositions have curing temperatures or curing temperature ranges sufficiently separated to allow the composition with the lower curing temperature, hereinafter the first composition, to cure without curing the composition with the higher curing temperature, hereinafter the second composition, and in which the second composition is an epoxy compound with an imidazole/anhydride adduct.
  • the first composition will be cured during a B-staging process, and the second composition will be left uncured until a final cure is desired, such as, at the final attach of a semiconductor chip to a substrate.
  • the fully cured material is cross-linked or polymerized to a sufficiently high molecular weight effective to give it structural integrity.
  • Each of the first and second composition is one or more monomeric, one or more oligomeric, or one or more polymeric compounds or resins, or combinations of those, that co-react to polymerize or cross-link. Both polymerization and cross-linking are referred to as curing.
  • the compositions according to the claims in general will contain a curing agent or curing initiator in addition to the monomeric, oligomeric, or polymeric species, and optionally, may contain a solvent.
  • the combination of the first and second compositions will be referred to as the total B-stageable underfill.
  • the first composition will comprise a liquid, or a solid dissolved or dispersed in a solvent.
  • the second composition will be a solid or semi-solid material at room temperature, dispersible or dissolvable either in the liquid first composition, or in the same or a compatible solvent for the first composition.
  • the choice of first and second compositions will be determined in part by the temperature at which the final interconnection of the semiconductor chip to its substrate is made.
  • the solder fluxing and interconnection occurs at a temperature of 183°C.
  • the final curing of the underfill should occur rapidly after the solder bump flow and interconnection and may occur at the solder reflow temperature or at a higher temperature. Consequently, in this case, the second composition will be chosen to have a curing temperature near or at 183°C or slightly higher. If a polymeric interconnect material is used, the second composition will be chosen to have a curing temperature at or near the curing temperature of the polymeric interconnect.
  • the first composition is chosen so that it will cure before the curing temperature of the second composition and before the temperature at which the interconnect is made.
  • the curing temperatures of the first and second compositions can be separated by any amount effective to provide two distinct curing profiles such that the second composition does not cure at or within the curing temperature range of the first composition, although insignificant curing of the second composition during the B-stage process is tolerable.
  • the curing temperatures of the first and second compositions will be separated by at least 30°C.
  • the B-stage heating that is, the first composition curing, occurs at a temperature within the range of about 100°C to about 150°C. Any solvent used should be chosen to evaporate off within the same temperature range as first composition curing. Curing the first composition and evaporating the solvent during the B-stage process will solidify the total underfill composition, permit clean dicing of the wafer, and inhibit voiding during the final attachment process.
  • the total underfill composition When heated to the appropriate attach temperature for the semiconductor die, the total underfill composition should melt and flow sufficiently to completely wet-out the surface of the substrate. An efficient wet-out results in good adhesion.
  • the curing processes can be initiated and advanced by irradiation (such as with UV light) for the B-staging first cure, and then by heat for the final cure, or both the B-staging and final cure can be initiated and advanced by heat.
  • irradiation such as with UV light
  • heat for the final cure
  • first and second compositions will be present in a molar ratio of 5:95 to 95:5, as can be determined by the practitioner for specific end uses.
  • Combinations of first compositions and second compositions of the total B-stageable underfill include:
  • thermally curable acrylic such as those available from Sartomer
  • maleimide such as those available from Ciba Specialty Chemicals or National Starch and Chemical Company
  • vinyl compounds such as vinyl ethers and vinyl silanes available from Aldrich
  • thermally curable epoxy compounds or resins such as those available from National Starch, CIBA, Sumitomo or Dainippon
  • thermally curable acrylic compounds such as those available from Sartomer
  • free radical curing agents such as those available from Sartomer
  • thermally curable epoxy compounds or resins such as those available from National Starch, CIBA, Sumitomo or Dainippon
  • imidazole/anhydride adduct such as those available from National Starch, CIBA, Sumitomo or Dainippon
  • thermally initiated, free radical curable bismaleimide compounds (electron acceptors) (such as those available from Ciba Specialty Chemicals or National Starch and Chemical Company) with (electron donors) vinyl ethers, vinyl silanes, styrenic compounds, cinnamyl compounds.
  • thermally curable epoxy compounds such as those available from National Starch, CIBA, Sumitomo or Dainippon with an imidazole/anhydride adduct.
  • suitable epoxy resins include monofunctional and multifunctional glycidyl ethers of Bisphenol-A and Bisphenol-F, aliphatic and aromatic epoxies, saturated and unsaturated epoxies, cycloaliphatic epoxy resins and combinations of those.
  • Preferred epoxy resins are glycidyl ether epoxies, either separately or in combination with non-glycidyl ether epoxies.
  • a preferred epoxy resin of this type is bisphenol A epoxy resin.
  • Bisphenol-A type resin is commercially available from Resolution Technology as EPON 828.
  • Another preferred epoxy resin is bisphenol F epoxy resin, prepared by the reaction of one mole of bisphenol F resin and two moles of epichlorohydrin.
  • Bisphenol-F type resins are available commercially from CVC Specialty Chemicals, Maple Shade, New Jersey, under the designation 8230E, and from Resolution Performance Products LLC under the designation RSL1739.
  • a blend of bisphenol-A and bisphenol-F is available from Nippon Chemical Company under the designation ZX-1059.
  • epoxy novolac resin is prepared by the reaction of phenolic resin and epichlorohydrin.
  • a preferred epoxy novolac resin is poly(phenyl glycidyl ether)-co-formaldehyde.
  • biphenyl epoxy resin commonly prepared by the reaction of biphenyl resin and epichlorohydrin; dicyclopentadiene-phenol epoxy resin; naphthalene resins; epoxy functional butadiene acrylonitrile copolymers; epoxy functional polydimethyl siloxane; and mixtures of the above.
  • Non-glycidyl ether epoxides may also be used. Suitable examples include 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexane carboxylate, which contains two epoxide groups that are part of the ring structures and an ester linkage; vinylcyclohexene dioxide, which contains two epoxide groups and one of which is part of the ring structure; 3,4-epoxy-6-methyl cyclohexyl methyl-3,4-epoxycyclohexane carboxylate; and dicyclopentadiene dioxide.
  • 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexane carboxylate which contains two epoxide groups that are part of the ring structures and an ester linkage
  • vinylcyclohexene dioxide which contains two epoxide groups and one of which is part of the ring structure
  • Suitable epoxies include:
  • the catalyst for the epoxy compositions used in the total B-stageable underfill is an imidazole-anhydride adduct. If the curing agent acts too quickly, it can gel the formulation and inhibit the fluxing of the solder.
  • the use of the imidazole-anhydride adduct keeps the formulation viscosity at a sufficiently low level, usually below 5,000 mPa.s at 190°C, to ensure that fluxing can occur.
  • Preferred imidazoles for forming the adduct include non-N-substituted imidazoles, such as, 2-phenyl-4-methyl imidazole, 2-phenyl imidazole, and imidazole.
  • Other useful imidazole components for the adduct include alkyl-substituted imidazoles, N-substituted imidazoles, and mixtures of those.
  • Preferred anhydrides for forming the adduct are cycloaliphatic anhydrides, such as, pyromellitic dianhydride, commercially available as PMDA from Aldrich.
  • Other suitable anhydrides include methylhexa-hydro phthalic anhydride (commercially available as MHHPA from Lonza Inc. Intermediates and Actives) methyltetra-hydrophthalic anhydride, nadic methyl anhydride, hexa-hydro phthalic anhydride, tetra-hydro phthalic anhydride, phthalic anhydride, dodecyl succinic anhydride, bisphenyl dianhydride, benzophenone tetracarboxylic dianhydride, and mixtures of those.
  • Two preferred adducts are a complex of 1 part 1,2,4,5-benzenetetracarboxylic anhydride and 4 parts 2-phenyl-4-methylimidazole, and a complex of 1 part 1,2,4,5-benzenetetracarboxylic dianhydride and 2 parts 2-phenyl-4-methylimidazole.
  • the adducts are prepared by dissolving the components in a suitable solvent, such as acetone, under heat. Upon cooling the adduct precipitates out.
  • the total B-stageable underfill optionally further may comprise a solvent, an inorganic filler, and a fluxing agent.
  • a solvent an inorganic filler
  • a fluxing agent an inorganic filler
  • Other optional components that may be used at the formulator's discretion include one or more air release agents, flow additives, adhesion promoters, rheology modifiers, and surfactants. The components are specifically chosen to obtain the desired balance of properties for the use of the chemistry sets chosen.
  • Suitable cinnamyl donors for use with maleimides include: in which C 36 represents a linear or branched alkyl of 36 carbons derived from linoleic and oleic acids.
  • Suitable styrenic donors for use with maleimides include: in which C 36 represents a linear or branched alkyl of 36 carbons derived from linoleic and oleic acids.
  • the underfill composition may also include a fluxing agent to remove metal oxide from the electrical terminal pads and to prevent reoxidation.
  • a fluxing agent to remove metal oxide from the electrical terminal pads and to prevent reoxidation.
  • a variety of different fluxing materials may be employed, although the preferred fluxing agent will be a carboxylic acid or anhydride.
  • Preferred fluxing agents include polysebasic polyanhydride, rosin gum, dodecanedioic acid (commercially available as Corfree M2 from Aldrich), adipic acid, tartaric acid, and citric acid.
  • Other suitable fluxing agents include alcohols, hydroxyl acids and hydroxyl bases.
  • Preferable fluxing materials include polyols such as ethylene glycol, glyercol, 3-[bis(glycidyl oxy methyl) methoxy]-1,2-propane diol, D-ribose, D-cellobiose, cellulose, and 3-cyclohexene-1,1-dimethanol.
  • polyols such as ethylene glycol, glyercol, 3-[bis(glycidyl oxy methyl) methoxy]-1,2-propane diol, D-ribose, D-cellobiose, cellulose, and 3-cyclohexene-1,1-dimethanol.
  • solvents can be utilized to modify the viscosity of the composition, and if used should be chosen so that they evaporate during the B-stage heating.
  • B-stage heating will occur in the range of about 100°C to about 150°C.
  • solvents include ketones, esters, alcohols, ethers, and other solvents that are stable and dissolve the composition's components.
  • Preferred solvents include ⁇ -butyrolactone and propylene glycol methyl ethyl acetate.
  • Suitable fillers for underfill materials are nonconductive and include particles of vermiculite, mica, wollastonite, calcium carbonate, titania, sand, glass, fused silica, fumed silica, barium sulfate, and halogenated ethylene polymers, such as tetrafluoroethylene, trifluoro-ethylene, vinylidene fluoride, vinyl fluoride, vinylidene chloride, and vinyl chloride. If used, fillers generally will be present in amounts up to 98% by weight of the formulation.
  • Curing agents such as free radical initiators, thermal initiators, and photoinitiators will be present in an effective amount to cure the composition. In general, those amounts will range from 0.1 % to 30%, preferably 1 % to 20%, by weight of the total organic material (that is, excluding any inorganic fillers) in the composition.
  • Preferred free-radical initiators include peroxides, such as butyl peroctoates and dicumyl peroxide, commercial products, such as USP90MD (a product of Witco), and azo compounds, such as (VAZ052 and VAZ064 (products of Dupont), 2,2'-azobis(2-methyl-propanenitrile) and 2,2'-azobis(2-methyl-butanenitrile).
  • Preferred photoinitiators are those sold by Ciba Specialty Chemicals under the trademark Irgacure.
  • first compositions it may be advantageous to include a curing accelerator, such as cobalt neodecanoate, to lower the curing temperature. If added, curing accelerators will be present in an amount from about 0.05% to about 1.0% by weight of the organic components of the first composition, excluding the organic components of the second composition and any fillers. It may in some cases also be advantageous to add a cationic curing agent, such as Rhodorsil 2074.
  • a curing accelerator such as cobalt neodecanoate
  • Silicon wafers have an active face, on which the microcircuitry is embedded, and a passive face.
  • the dual cure underfill compositions of this invention are stenciled onto the active face of the silicon wafer.
  • this invention is a silicon wafer with an active face containing circuitry on which has been deposited a B-stageable underfill, the B-stageable underfill comprising a first composition with a lower curing temperature as described previously and a second composition with a higher curing temperature as described previously, characterized in that the first composition has been fully cured, and in which the second composition is an epoxy compound and an imidazole/anhydride adduct.
  • EXAMPLE 1 Two compositions with dual cure capability were prepared and tested to determine the appropriate parameters for B-staging and to demonstrate proper interconnection formation. The components in parts by weight are recorded in Table 1.
  • Achieving proper B-staging parameters is important for both the dicing of the wafer and for the eventual attach of the semiconductor chip to its substrate. If the formulation is heated (B-staged) for less than the optimal time, the underfill will be tacky and will affect the dicing process. If the material is heated (B-staged) at too high a temperature or for too long a time period, the second composition will start to cure. If the second composition starts to cure, the over-B-staged coating on the chip will not flow during attachment of the chip to the substrate, which affects the adhesion of the underfill encapsulant and eventually the performance of the semiconductor package.
  • test vehicle used to determine the ability of the compositions to be B-staged and the appropriate parameters for B-staging was a glass slide bumped with eutectic solder balls 20 mil in diameter.
  • Formulations A and B were stenciled independently onto the test vehicles to a height of 20 mil.
  • the test vehicles were heated at 130°C under vacuum in a NAPCO vacuum oven, model 5831, with vacuum reading at 73.66 cm (29 inch) Hg for 30 minutes and at each 10 minute interval up to 100 minutes.
  • test vehicles were checked for a non-tacky, uniform, and smooth coating by visual observation and manual touching.
  • test vehicles were also investigated for curing of the second composition. After each time period for heating as described above, the test vehicle was placed underfill side down onto a piece of FR-4 Board with copper finish. This assembly was then passed through a reflow oven with a typical reflow temperature profile with the highest temperature at 240°C. The assembly was visually checked through the glass slide for fluxing of the solder balls and attachment between the glass slide test vehicle and the FR-4 board. Enlarged solder balls are indicative of fluxing. The absence of fluxing is indicative of curing of the second composition, which would constrain the solder and inhibit it from flowing. The absence of fluxing also prevents the attachment of the test vehicle to the FR-4 board.
  • the optimal B-stage period depends on the thickness of the underfill encapsulant and the chemical composition of the formulations. In general, the thicker the underfill encapsulant, the longer the required B-stage time period. Determination of the optimal B-stage time is within the expertise of one skilled in the art with the disclosures of this specification.
  • EXAMPLE 2 This example demonstrates the ability of the dual curable underfill compositions to flux eutectic Pb/Sn solder and enable the formation of interconnection with the substrate.
  • the same Formulations A and B used in Example 1 were used here.
  • Eutectic solder balls 20 mils in diameter were placed onto a glass slide.
  • the underfill material was coated onto the glass slides to a thickness of around 20 mils by stenciling.
  • the glass slides were then placed on a hot-plate, preheated at 135°C, and held at that temperature for 50 minutes. A smooth, void free, non-tacky coating was obtained.
  • the coated glass slide was then placed (coated side down) on a piece of copper finished FR-4 substrate.
  • the FR-4 substrate (with the coated glass slide on its top) was placed on a hot-plate that was pre-heated to 240°C. It was observed that the solder balls increased in area and the slide collapsed onto the substrate, indicating that the solder fluxed and an interconnection between chip and substrate would have been formed.
  • the underfill also wetted the substrate and flowed to form a complete fillet around the glass slide.

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Abstract

A silicon wafer has a B-stageable underfill material deposited on the active face of the wafer. The B-stageable underfill comprises a first composition with a lower curing temperature and a second composition with a higher curing temperature, characterized in that the first composition has been fully cured.

Description

    FIELD OF THE INVENTION
  • This invention relates to B-stageable underfill compositions suitable for application to a silicon wafer before singulation. The compositions contain two separately curing chemistries.
  • BACKGROUND OF THE INVENTION
  • Microelectronic devices contain millions of electrical circuit components that are electrically connected to each other and electrically connected to and mechanically supported on a carrier or a substrate. The connections are made between electrical terminations on the electronic component and corresponding electrical terminations on the substrate.
  • One method for making these interconnections uses polymeric or metallic material that is applied in bumps to the component or substrate terminals. The terminals are aligned and contacted together and the resulting assembly is heated to reflow the metallic or polymeric material and solidify the connection.
  • During its normal service life, the electronic assembly is subjected to cycles of elevated and lowered temperatures. Due to the differences in the coefficient of thermal expansion for the electronic component, the interconnect material, and the substrate, this thermal cycling can stress the components of the assembly and cause it to fail. To prevent failure, the gap between the component and the substrate is filled with a polymeric encapsulant, hereinafter called underfill or underfill encapsulant, to reinforce the interconnect material and to absorb some of the stress of the thermal cycling.
  • Two prominent uses for underfill technology are for reinforcing packages known in the industry as chip scale packages (CSP), in which a chip package is attached to a substrate and flip-chip packages in which a chip is attached by an array of interconnections to a substrate.
  • In conventional underfill applications, the underfill dispensing and curing take place after the reflow of the metallic or polymeric interconnect. If the interconnect is a metal solder composition, a fluxing agent initially is applied on the metal terminal pads on the substrate. The semiconductor chip is placed on the fluxed area of the soldering site. The assembly is then heated to allow for reflow of the solder joint, or reflow of the polymeric interconnect. Next, a measured amount of underfill is dispensed along one or more peripheral sides of the electronic assembly and capillary action within the component-to-substrate gap draws the material inward. After the gap is filled, additional underfill encapsulant may be dispensed along the complete assembly periphery to help reduce stress concentrations and prolong the fatigue life of the assembled structure. The underfill encapsulant is subsequently cured to reach its optimized final properties.
  • In another conventional method, the underfill is dispensed onto the substrate. A bumped chip is placed active-face down on the underfill and the assembly heated to establish the solder or polymeric interconnections and cure the underfill.
  • Recently, attempts have been made to streamline the process and increase efficiency by placing the underfill encapsulant directly onto the semiconductor wafer before it is diced into individual chips. This procedure, which can be performed via various methods, including screen printing, stencil printing and spin coating, allows for a single application of underfill to a semiconductor wafer, which is later diced into multiple individual chips.
    The preamble of claim 1 is known from document US-B-6 242 513 .
  • In order to be useful as a wafer level underfill encapsulant, the underfill must have several properties. The material must be easy to apply uniformly on the wafer so that the entire wafer has a consistent coating. During the final attachment of the individual chips to a substrate, the underfill must flow to enable fillet formation, flux the solder bumps if solder was used and provide good adhesion. Whether the interconnection of the chip to the substrate is made with solder or with polymeric material, curing of the underfill should occur after the interconnection is formed and should occur rapidly.
  • Another important property is that the underfill must be able to be solidified after application to the wafer so as not to interfere with the clean dicing of the wafer into individual chips. The solidification of the underfill encapsulant is done by a process called B-staging, which means that the underfill material undergoes an initial heating after its placement on the wafer to result in a smooth, non-tacky coating without residual solvent.
  • If the starting underfill material is a solid, the solid is dispersed or dissolved in a solvent to form a paste and the paste applied to the wafer. The underfill is then heated to evaporate the solvent, leaving a solid, but uncured, underfill on the wafer. If the starting underfill material is a liquid or paste, the underfill is dispensed onto the wafer and heated to partially cure it to a solid state.
  • The B-stage heating typically occurs at a temperature lower than 150°C, preferably within the range of about 100°C to about 150°C. The final curing of the underfill encapsulant must be delayed until after solder fluxing (when solder is the interconnect material) and the forming of the interconnection, which occurs at a temperature of 183°C in the case of tin-lead eutectic solder.
  • SUMMARY OF THE INVENTION
  • This invention is an underfill composition comprising two chemical compositions have curing temperatures or curing temperature ranges sufficiently separated to allow the composition with the lower curing temperature, hereinafter the first composition, to cure without curing the composition with the higher curing temperature, hereinafter the second composition, and in which the second composition is an epoxy compound with an imidazole/anhydride adduct. In practice, the first composition will be cured during a B-staging process, and the second composition will be left uncured until a final cure is desired, such as, at the final attach of a semiconductor chip to a substrate. The fully cured material is cross-linked or polymerized to a sufficiently high molecular weight effective to give it structural integrity.
  • DETAILED DESCRIPTION OF THE INVENTION
  • Each of the first and second composition is one or more monomeric, one or more oligomeric, or one or more polymeric compounds or resins, or combinations of those, that co-react to polymerize or cross-link. Both polymerization and cross-linking are referred to as curing. The compositions according to the claims in general will contain a curing agent or curing initiator in addition to the monomeric, oligomeric, or polymeric species, and optionally, may contain a solvent. Within this specification and claims; the combination of the first and second compositions will be referred to as the total B-stageable underfill.
  • The first composition will comprise a liquid, or a solid dissolved or dispersed in a solvent. The second composition will be a solid or semi-solid material at room temperature, dispersible or dissolvable either in the liquid first composition, or in the same or a compatible solvent for the first composition. The choice of first and second compositions will be determined in part by the temperature at which the final interconnection of the semiconductor chip to its substrate is made.
  • For example, in the case of tin-lead eutectic solder, the solder fluxing and interconnection occurs at a temperature of 183°C. The final curing of the underfill should occur rapidly after the solder bump flow and interconnection and may occur at the solder reflow temperature or at a higher temperature. Consequently, in this case, the second composition will be chosen to have a curing temperature near or at 183°C or slightly higher. If a polymeric interconnect material is used, the second composition will be chosen to have a curing temperature at or near the curing temperature of the polymeric interconnect.
  • The first composition is chosen so that it will cure before the curing temperature of the second composition and before the temperature at which the interconnect is made. The curing temperatures of the first and second compositions can be separated by any amount effective to provide two distinct curing profiles such that the second composition does not cure at or within the curing temperature range of the first composition, although insignificant curing of the second composition during the B-stage process is tolerable. In a preferred embodiment, the curing temperatures of the first and second compositions will be separated by at least 30°C.
  • Typically, the B-stage heating, that is, the first composition curing, occurs at a temperature within the range of about 100°C to about 150°C. Any solvent used should be chosen to evaporate off within the same temperature range as first composition curing. Curing the first composition and evaporating the solvent during the B-stage process will solidify the total underfill composition, permit clean dicing of the wafer, and inhibit voiding during the final attachment process.
  • When heated to the appropriate attach temperature for the semiconductor die, the total underfill composition should melt and flow sufficiently to completely wet-out the surface of the substrate. An efficient wet-out results in good adhesion.
  • The curing processes can be initiated and advanced by irradiation (such as with UV light) for the B-staging first cure, and then by heat for the final cure, or both the B-staging and final cure can be initiated and advanced by heat.
  • The first and second compositions will be present in a molar ratio of 5:95 to 95:5, as can be determined by the practitioner for specific end uses. Combinations of first compositions and second compositions of the total B-stageable underfill include:
  • First: thermally curable acrylic (such as those available from Sartomer), maleimide (such as those available from Ciba Specialty Chemicals or National Starch and Chemical Company), and vinyl compounds (such as vinyl ethers and vinyl silanes available from Aldrich) with free radical curing agents. Second: thermally curable epoxy compounds or resins (such as those available from National Starch, CIBA, Sumitomo or Dainippon) with an imidazole/anhydride adduct.
  • First: thermally curable acrylic compounds (such as those available from Sartomer) with free radical curing agents. Second: thermally curable epoxy compounds or resins (such as those available from National Starch, CIBA, Sumitomo or Dainippon) with an imidazole/anhydride adduct.
  • First: radiation curable acrylic compounds (such as those available from Sartomer) with photoinitiators. Second: thermally curable epoxy compounds (such as those available from National Starch, CIBA, Sumitomo or Dainippon) with an imidazole/anhydride adduct.
  • First: thermally initiated, free radical curable bismaleimide compounds (electron acceptors) (such as those available from Ciba Specialty Chemicals or National Starch and Chemical Company) with (electron donors) vinyl ethers, vinyl silanes, styrenic compounds, cinnamyl compounds. Second: thermally curable epoxy compounds (such as those available from National Starch, CIBA, Sumitomo or Dainippon) with an imidazole/anhydride adduct.
  • Examples of suitable epoxy resins include monofunctional and multifunctional glycidyl ethers of Bisphenol-A and Bisphenol-F, aliphatic and aromatic epoxies, saturated and unsaturated epoxies, cycloaliphatic epoxy resins and combinations of those.
  • Preferred epoxy resins are glycidyl ether epoxies, either separately or in combination with non-glycidyl ether epoxies. A preferred epoxy resin of this type is bisphenol A epoxy resin. Bisphenol-A type resin is commercially available from Resolution Technology as EPON 828. Another preferred epoxy resin is bisphenol F epoxy resin, prepared by the reaction of one mole of bisphenol F resin and two moles of epichlorohydrin. Bisphenol-F type resins are available commercially from CVC Specialty Chemicals, Maple Shade, New Jersey, under the designation 8230E, and from Resolution Performance Products LLC under the designation RSL1739. A blend of bisphenol-A and bisphenol-F is available from Nippon Chemical Company under the designation ZX-1059.
  • Another suitable epoxy resin is epoxy novolac resin, which is prepared by the reaction of phenolic resin and epichlorohydrin. A preferred epoxy novolac resin is poly(phenyl glycidyl ether)-co-formaldehyde.
  • Other suitable epoxy resins are biphenyl epoxy resin, commonly prepared by the reaction of biphenyl resin and epichlorohydrin; dicyclopentadiene-phenol epoxy resin; naphthalene resins; epoxy functional butadiene acrylonitrile copolymers; epoxy functional polydimethyl siloxane; and mixtures of the above.
  • Non-glycidyl ether epoxides may also be used. Suitable examples include 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexane carboxylate, which contains two epoxide groups that are part of the ring structures and an ester linkage; vinylcyclohexene dioxide, which contains two epoxide groups and one of which is part of the ring structure; 3,4-epoxy-6-methyl cyclohexyl methyl-3,4-epoxycyclohexane carboxylate; and dicyclopentadiene dioxide.
  • Further examples of suitable epoxies include:
    Figure imgb0001
    Figure imgb0002
    Figure imgb0003
    Figure imgb0004
    and
    Figure imgb0005
  • The catalyst for the epoxy compositions used in the total B-stageable underfill is an imidazole-anhydride adduct. If the curing agent acts too quickly, it can gel the formulation and inhibit the fluxing of the solder. The use of the imidazole-anhydride adduct keeps the formulation viscosity at a sufficiently low level, usually below 5,000 mPa.s at 190°C, to ensure that fluxing can occur.
  • Preferred imidazoles for forming the adduct include non-N-substituted imidazoles, such as, 2-phenyl-4-methyl imidazole, 2-phenyl imidazole, and imidazole. Other useful imidazole components for the adduct include alkyl-substituted imidazoles, N-substituted imidazoles, and mixtures of those.
  • Preferred anhydrides for forming the adduct are cycloaliphatic anhydrides, such as, pyromellitic dianhydride, commercially available as PMDA from Aldrich. Other suitable anhydrides include methylhexa-hydro phthalic anhydride (commercially available as MHHPA from Lonza Inc. Intermediates and Actives) methyltetra-hydrophthalic anhydride, nadic methyl anhydride, hexa-hydro phthalic anhydride, tetra-hydro phthalic anhydride, phthalic anhydride, dodecyl succinic anhydride, bisphenyl dianhydride, benzophenone tetracarboxylic dianhydride, and mixtures of those.
  • Two preferred adducts are a complex of 1 part 1,2,4,5-benzenetetracarboxylic anhydride and 4 parts 2-phenyl-4-methylimidazole, and a complex of 1 part 1,2,4,5-benzenetetracarboxylic dianhydride and 2 parts 2-phenyl-4-methylimidazole. The adducts are prepared by dissolving the components in a suitable solvent, such as acetone, under heat. Upon cooling the adduct precipitates out.
  • In addition to the first and second compositions and curing agents, the total B-stageable underfill optionally further may comprise a solvent, an inorganic filler, and a fluxing agent. Other optional components that may be used at the formulator's discretion include one or more air release agents, flow additives, adhesion promoters, rheology modifiers, and surfactants. The components are specifically chosen to obtain the desired balance of properties for the use of the chemistry sets chosen.
  • Examples of suitable cinnamyl donors for use with maleimides include:
    Figure imgb0006
    Figure imgb0007
    Figure imgb0008
    Figure imgb0009
    in which C36 represents a linear or branched alkyl of 36 carbons derived from linoleic and oleic acids.
  • Examples of suitable styrenic donors for use with maleimides include:
    Figure imgb0010
    Figure imgb0011
    Figure imgb0012
    Figure imgb0013
    Figure imgb0014
    in which C36 represents a linear or branched alkyl of 36 carbons derived from linoleic and oleic acids.
  • The underfill composition may also include a fluxing agent to remove metal oxide from the electrical terminal pads and to prevent reoxidation. A variety of different fluxing materials may be employed, although the preferred fluxing agent will be a carboxylic acid or anhydride. Preferred fluxing agents include polysebasic polyanhydride, rosin gum, dodecanedioic acid (commercially available as Corfree M2 from Aldrich), adipic acid, tartaric acid, and citric acid. Other suitable fluxing agents include alcohols, hydroxyl acids and hydroxyl bases. Preferable fluxing materials include polyols such as ethylene glycol, glyercol, 3-[bis(glycidyl oxy methyl) methoxy]-1,2-propane diol, D-ribose, D-cellobiose, cellulose, and 3-cyclohexene-1,1-dimethanol.
  • Optionally, solvents can be utilized to modify the viscosity of the composition, and if used should be chosen so that they evaporate during the B-stage heating. Typically, B-stage heating will occur in the range of about 100°C to about 150°C. Examples of solvents that may be utilized include ketones, esters, alcohols, ethers, and other solvents that are stable and dissolve the composition's components. Preferred solvents include γ-butyrolactone and propylene glycol methyl ethyl acetate.
  • Suitable fillers for underfill materials are nonconductive and include particles of vermiculite, mica, wollastonite, calcium carbonate, titania, sand, glass, fused silica, fumed silica, barium sulfate, and halogenated ethylene polymers, such as tetrafluoroethylene, trifluoro-ethylene, vinylidene fluoride, vinyl fluoride, vinylidene chloride, and vinyl chloride. If used, fillers generally will be present in amounts up to 98% by weight of the formulation.
  • Curing agents such as free radical initiators, thermal initiators, and photoinitiators will be present in an effective amount to cure the composition. In general, those amounts will range from 0.1 % to 30%, preferably 1 % to 20%, by weight of the total organic material (that is, excluding any inorganic fillers) in the composition. Preferred free-radical initiators include peroxides, such as butyl peroctoates and dicumyl peroxide, commercial products, such as USP90MD (a product of Witco), and azo compounds, such as (VAZ052 and VAZ064 (products of Dupont), 2,2'-azobis(2-methyl-propanenitrile) and 2,2'-azobis(2-methyl-butanenitrile). Preferred photoinitiators are those sold by Ciba Specialty Chemicals under the trademark Irgacure.
  • For some first compositions, it may be advantageous to include a curing accelerator, such as cobalt neodecanoate, to lower the curing temperature. If added, curing accelerators will be present in an amount from about 0.05% to about 1.0% by weight of the organic components of the first composition, excluding the organic components of the second composition and any fillers. It may in some cases also be advantageous to add a cationic curing agent, such as Rhodorsil 2074.
  • Other optional ingredients at the disposal of the formulator are defoaming agents, adhesion promoters, wetting agents, flow additives and rheology modifiers, which if added typically will be present in amounts from 0.01 % to 5% by weight.
  • Silicon wafers have an active face, on which the microcircuitry is embedded, and a passive face. The dual cure underfill compositions of this invention are stenciled onto the active face of the silicon wafer. In a further embodiment, this invention is a silicon wafer with an active face containing circuitry on which has been deposited a B-stageable underfill, the B-stageable underfill comprising a first composition with a lower curing temperature as described previously and a second composition with a higher curing temperature as described previously, characterized in that the first composition has been fully cured, and in which the second composition is an epoxy compound and an imidazole/anhydride adduct.
  • EXAMPLES
  • EXAMPLE 1: Two compositions with dual cure capability were prepared and tested to determine the appropriate parameters for B-staging and to demonstrate proper interconnection formation. The components in parts by weight are recorded in Table 1.
  • TABLE 1
    FORMULATION A
    (Parts by weight)
    Epoxy Epon 1001 50
    2-Phenoxyethyl acrylate 25.2
    Butylphenyl maleimide 25
    Cobalt neodecanoate 1
    t-Butyl peroctoate 2
    Adduct of PMDA and 2P4Mz 2
    Dodecanedioic acid 10
    FORMULATION B
    (Parts by weight)
    Epoxy Epon 1001 50
    2-Phenoxyethyl acrylate 25.2
    Cobalt neodecanoate 1
    t-Butyl peroctoate 2
    Adduct of PMDA and 2P4Mz 2
    Dodecanedioic acid 10
  • Achieving proper B-staging parameters is important for both the dicing of the wafer and for the eventual attach of the semiconductor chip to its substrate. If the formulation is heated (B-staged) for less than the optimal time, the underfill will be tacky and will affect the dicing process. If the material is heated (B-staged) at too high a temperature or for too long a time period, the second composition will start to cure. If the second composition starts to cure, the over-B-staged coating on the chip will not flow during attachment of the chip to the substrate, which affects the adhesion of the underfill encapsulant and eventually the performance of the semiconductor package.
  • The test vehicle used to determine the ability of the compositions to be B-staged and the appropriate parameters for B-staging was a glass slide bumped with eutectic solder balls 20 mil in diameter. Formulations A and B were stenciled independently onto the test vehicles to a height of 20 mil. The test vehicles were heated at 130°C under vacuum in a NAPCO vacuum oven, model 5831, with vacuum reading at 73.66 cm (29 inch) Hg for 30 minutes and at each 10 minute interval up to 100 minutes.
  • After each time period of heating, the test vehicles were checked for a non-tacky, uniform, and smooth coating by visual observation and manual touching.
  • The test vehicles were also investigated for curing of the second composition. After each time period for heating as described above, the test vehicle was placed underfill side down onto a piece of FR-4 Board with copper finish. This assembly was then passed through a reflow oven with a typical reflow temperature profile with the highest temperature at 240°C. The assembly was visually checked through the glass slide for fluxing of the solder balls and attachment between the glass slide test vehicle and the FR-4 board. Enlarged solder balls are indicative of fluxing. The absence of fluxing is indicative of curing of the second composition, which would constrain the solder and inhibit it from flowing. The absence of fluxing also prevents the attachment of the test vehicle to the FR-4 board.
  • The results of the test are reported in Table 2 and show that for these formulations, B-staging can achieve a non-tacky coating and no curing of the second composition.
  • TABLE 2 B-staging Times and Results
    130°C for time (min) Tacky Second Composition Cured
    30 Yes No
    40 Yes No
    50 No No
    60 No No
    70 No Yes
    80 No Yes
    90 No Yes
    100 No Yes
  • Visual observation and the data show that the optimal B-staging time under is 50-60 minutes at 130°C in the vacuum oven for the compositions with thickness of 20 mils. Under these B-stage conditions, a smooth, non-tacky, and void-free coating formed on the glass slide. If the material was cured less than this time, the underfill was still tacky. If the material was B-staged longer than 60 minutes, after the glass slide was attached on the FR-4 board, the assembly showed either no-flux of the solder balls, or poor attachment between the parts, or both.
  • It should be pointed out that the optimal B-stage period depends on the thickness of the underfill encapsulant and the chemical composition of the formulations. In general, the thicker the underfill encapsulant, the longer the required B-stage time period. Determination of the optimal B-stage time is within the expertise of one skilled in the art with the disclosures of this specification.
  • EXAMPLE 2. This example demonstrates the ability of the dual curable underfill compositions to flux eutectic Pb/Sn solder and enable the formation of interconnection with the substrate. The same Formulations A and B used in Example 1 were used here. Eutectic solder balls 20 mils in diameter were placed onto a glass slide. The underfill material was coated onto the glass slides to a thickness of around 20 mils by stenciling. The glass slides were then placed on a hot-plate, preheated at 135°C, and held at that temperature for 50 minutes. A smooth, void free, non-tacky coating was obtained.
  • The coated glass slide was then placed (coated side down) on a piece of copper finished FR-4 substrate. The FR-4 substrate (with the coated glass slide on its top) was placed on a hot-plate that was pre-heated to 240°C. It was observed that the solder balls increased in area and the slide collapsed onto the substrate, indicating that the solder fluxed and an interconnection between chip and substrate would have been formed. The underfill also wetted the substrate and flowed to form a complete fillet around the glass slide.
  • Using exactly the same underfill compositions and processes, similar results were obtained on OSP (Organic Solderable Passivation) coated copper substrate.

Claims (8)

  1. A silicon wafer having a B-stageable underfill material deposited on one face of the wafer, the B-stageable underfill comprising two chemical compositions, a first composition and a second composition, having curing temperatures or curing temperature ranges sufficiently separated to allow the composition with the lower curing temperature, the first composition, to cure without curing the composition with the higher curing temperature, the second composition,
    characterized in that the first composition has been cured and the second composition is uncured,
    and in which the second composition is an epoxy compound and an imidazole/anhydride adduct.
  2. The silicon wafer according to claim 1 in which the curing temperatures of the first and second composition are separated by at least 30°C.
  3. The silicon wafer according to claim 1 in which the first composition is selected from the group consisting of acrylic compounds; cycloaliphatic epoxy compounds, bismaleimide compounds; and bismaleimide compounds in combination with vinyl ether, vinyl silane, styrenic or cinnamyl compounds.
  4. The silicon wafer according to claim 1 in which the imidazole/anhydride adduct is a complex of 1 part 1,2,4,5-benzenetetracerboxylic anhydride and 4 parts 2-phenyl-4-methylimidazole, or a complex of 1 part 1,2,4,5-benzenetetracarboxylic dianhydride and 2 parts 2-phenyl-4-methylimidazole.
  5. A B-stageable underfill composition suitable for application to a silicon wafer before singulation characterized in that it comprises two chemical compositions, a first composition and a second composition, having curing temperatures or curing temperature ranges sufficiently separated to allow the composition with the lower curing temperature, the first composition, to cure without curing the composition with the higher curing temperature, the second composition,
    and in which the second composition is an epoxy compound with an imidazole/anhydride adduct.
  6. The B-stageable underfill composition according to claim 5 in which the curing temperatures of the first and second compositions are separated by at least 30°C.
  7. The B-stageable underfill composition according to claim 6 in which the first composition is selected from the group consisting of acrylic compounds: cycloaliphatic epoxy compounds, bismaleimide compounds; and bismaleimide compounds in combination with vinyl ether, vinyl silane, styrenic or cinnamyl compounds.
  8. The B-stageable underfill composition according to claim 6 in which the imidazole/anhydride adduct is a complex of 1 part 1,2,4,5-benzenetetracarboxylic anhydride and 4 parts 2-phenyl-4-methylimidazole, or a complex of 1 part 1,2,4,5-benzenetetracarboxylic dianhydride and 2 parts 2-phenyl-4-methylimidazole.
EP02805072.2A 2001-12-14 2002-11-19 Dual cure b-stageable underfill for wafer level Expired - Lifetime EP1461829B2 (en)

Applications Claiming Priority (3)

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US20638 2001-12-14
US10/020,638 US6833629B2 (en) 2001-12-14 2001-12-14 Dual cure B-stageable underfill for wafer level
PCT/US2002/037208 WO2003052813A2 (en) 2001-12-14 2002-11-19 Dual cure b-stageable underfill for wafer level

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EP1461829A2 EP1461829A2 (en) 2004-09-29
EP1461829B1 EP1461829B1 (en) 2008-01-09
EP1461829B2 true EP1461829B2 (en) 2014-04-02

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Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030129438A1 (en) * 2001-12-14 2003-07-10 Becker Kevin Harris Dual cure B-stageable adhesive for die attach
US6833629B2 (en) 2001-12-14 2004-12-21 National Starch And Chemical Investment Holding Corporation Dual cure B-stageable underfill for wafer level
US20030162911A1 (en) * 2002-01-31 2003-08-28 Yue Xiao No flow underfill composition
US7473995B2 (en) * 2002-03-25 2009-01-06 Intel Corporation Integrated heat spreader, heat sink or heat pipe with pre-attached phase change thermal interface material and method of making an electronic assembly
US7846778B2 (en) * 2002-02-08 2010-12-07 Intel Corporation Integrated heat spreader, heat sink or heat pipe with pre-attached phase change thermal interface material and method of making an electronic assembly
US20060194064A1 (en) * 2002-03-01 2006-08-31 Xiao Allison Y Underfill encapsulant for wafer packaging and method for its application
US7037399B2 (en) * 2002-03-01 2006-05-02 National Starch And Chemical Investment Holding Corporation Underfill encapsulant for wafer packaging and method for its application
US20060147719A1 (en) * 2002-11-22 2006-07-06 Slawomir Rubinsztajn Curable composition, underfill, and method
US20050049334A1 (en) * 2003-09-03 2005-03-03 Slawomir Rubinsztain Solvent-modified resin system containing filler that has high Tg, transparency and good reliability in wafer level underfill applications
US7022410B2 (en) * 2003-12-16 2006-04-04 General Electric Company Combinations of resin compositions and methods of use thereof
US7176044B2 (en) 2002-11-25 2007-02-13 Henkel Corporation B-stageable die attach adhesives
US20040158008A1 (en) * 2003-02-06 2004-08-12 Xiping He Room temperature printable adhesive paste
US6885108B2 (en) * 2003-03-18 2005-04-26 Micron Technology, Inc. Protective layers formed on semiconductor device components so as to reduce or eliminate the occurrence of delamination thereof and cracking therein
JP4799177B2 (en) 2003-09-30 2011-10-26 関西ペイント株式会社 Coating composition and coating film forming method
WO2005056675A1 (en) * 2003-11-21 2005-06-23 Lord Corporation Dual-stage wafer applied underfills
US6908789B1 (en) * 2003-12-15 2005-06-21 Intel Corporation Method of making a microelectronic assembly
US7560519B2 (en) * 2004-06-02 2009-07-14 Lord Corporation Dual-stage wafer applied underfills
DE102005046280B4 (en) 2005-09-27 2007-11-08 Infineon Technologies Ag Semiconductor device with a semiconductor chip and method for producing the same
US20080039542A1 (en) * 2006-08-11 2008-02-14 General Electric Company Composition and associated method
US20080039608A1 (en) * 2006-08-11 2008-02-14 General Electric Company Oxetane composition, associated method and article
US20080121845A1 (en) * 2006-08-11 2008-05-29 General Electric Company Oxetane composition, associated method and article
US20080039560A1 (en) * 2006-08-11 2008-02-14 General Electric Company Syneretic composition, associated method and article
KR100792950B1 (en) * 2007-01-19 2008-01-08 엘에스전선 주식회사 Method of packaging semi-conductor
TW200948888A (en) * 2008-04-16 2009-12-01 Henkel Corp Flow controllable B-stageable composition
US8436253B2 (en) * 2008-05-23 2013-05-07 Panasonic Corporation Method of manufacturing mounting structure and mounting structure
EP2359395B1 (en) * 2008-11-25 2013-08-14 Lord Corporation Methods for protecting a die surface with photocurable materials
US9093448B2 (en) 2008-11-25 2015-07-28 Lord Corporation Methods for protecting a die surface with photocurable materials
TWI456012B (en) * 2010-06-08 2014-10-11 Henkel IP & Holding GmbH Wafer backside coating process with pulsed uv light source
CN104937027B (en) * 2013-01-23 2018-10-12 汉高知识产权控股有限责任公司 Underfill composition and the packaging technology for using the composition
CN105453240B (en) * 2013-08-02 2018-05-01 阿尔发装配解决方案有限公司 Two-sided reinforcement solder flux for encapsulation
WO2017062586A1 (en) * 2015-10-07 2017-04-13 Henkel IP & Holding GmbH Formulations and the use for 3d tsv packages
JP6224188B1 (en) * 2016-08-08 2017-11-01 太陽インキ製造株式会社 Semiconductor encapsulant

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3244051A1 (en) 1981-12-01 1983-07-14 Illinois Tool Works Inc., 60631 Chicago, Ill. POLYMERIZABLE ADHESIVE MIXTURE AND METHOD FOR PRODUCING A QUICKLY SETTING, STRONG, PERMANENT, HEAT AND SOLVENT RESISTANT ADHESIVE BONDING WITH THE ADHESIVE MIXTURE
EP0160621A2 (en) 1984-04-28 1985-11-06 Ciba-Geigy Ag Curable compositions
JPS6381187A (en) 1986-09-25 1988-04-12 Ibiden Co Ltd Thermosetting adhesive sheet
JPS63154780A (en) 1986-12-18 1988-06-28 Ibiden Co Ltd Adhesive composition and method of using the same as adhesive
US5261156A (en) 1991-02-28 1993-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of electrically connecting an integrated circuit to an electric device
US5579573A (en) 1994-10-11 1996-12-03 Ford Motor Company Method for fabricating an undercoated chip electrically interconnected to a substrate
WO1999067324A1 (en) 1998-06-22 1999-12-29 Loctite Corporation Thermosetting resin compositions useful as underfill sealants
EP0982385A1 (en) 1997-05-12 2000-03-01 Fujitsu Limited Adhesive, method for bonding, and assemblies of mounted boards
JP2001015551A (en) 1999-06-29 2001-01-19 Toshiba Corp Semiconductor device and its manufacture
JP2001323246A (en) 2000-03-07 2001-11-22 Sony Chem Corp Adhesive for connecting electrode and bonding method using the adhesive

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3746686A (en) 1971-07-12 1973-07-17 Shell Oil Co Process for curing polyepoxides with polycarboxylic acid salts of an imidazole compound and compositions thereof
JPS535920B2 (en) 1974-06-03 1978-03-02
JPS592445B2 (en) 1978-11-10 1984-01-18 三菱電機株式会社 Manufacturing method of heat-resistant resin
US4401499A (en) * 1980-06-09 1983-08-30 Sumitomo Bakelite Company Limited Crosslinked resin of epoxy compound and isocyanate and process for producing same
JPS5718815A (en) 1980-07-04 1982-01-30 Mitsubishi Heavy Ind Ltd Bearing device
JPS59197154A (en) 1983-04-22 1984-11-08 Hitachi Ltd Semiconductor device and manufacture thereof
JPS61237436A (en) 1985-04-15 1986-10-22 Toshiba Chem Corp Manufacture of semiconductor element
JPS62275123A (en) 1986-05-23 1987-11-30 Toray Ind Inc Resin composition for prepreg
US4816531A (en) 1987-02-05 1989-03-28 Shell Oil Company Bismaleimide resin composition containing epoxy resin and a phenolic curing agent therefor
US5082880A (en) * 1988-09-12 1992-01-21 Mitsui Toatsu Chemicals, Inc. Semiconductor sealing composition containing epoxy resin and polymaleimide
US5208188A (en) 1989-10-02 1993-05-04 Advanced Micro Devices, Inc. Process for making a multilayer lead frame assembly for an integrated circuit structure and multilayer integrated circuit die package formed by such process
US5081167A (en) 1990-07-16 1992-01-14 Shell Oil Company Cyanamide-cured maleimide/epoxy resin blend
US5128746A (en) * 1990-09-27 1992-07-07 Motorola, Inc. Adhesive and encapsulant material with fluxing properties
DE4130329A1 (en) 1991-09-12 1993-03-18 Bayer Ag HEAT-CURABLE REACTION RESIN MIXTURES, A METHOD FOR THE PRODUCTION THEREOF AND THE USE FOR THE PRODUCTION OF PRESSING MATERIALS AND MOLDED BODIES
US5728633A (en) * 1992-01-23 1998-03-17 Jacobs; Richard L. Interpenetrating network compositions and structures
US5510633A (en) 1994-06-08 1996-04-23 Xerox Corporation Porous silicon light emitting diode arrays and method of fabrication
US5494981A (en) * 1995-03-03 1996-02-27 Minnesota Mining And Manufacturing Company Epoxy-cyanate ester compositions that form interpenetrating networks via a Bronsted acid
US5654081A (en) * 1995-07-05 1997-08-05 Ford Motor Company Integrated circuit assembly with polymeric underfill body
CN1057402C (en) * 1996-03-01 2000-10-11 台湾通用器材股份有限公司 Method for packing semiconductor
JP2891184B2 (en) 1996-06-13 1999-05-17 日本電気株式会社 Semiconductor device and manufacturing method thereof
US5756405A (en) * 1996-09-10 1998-05-26 International Business Machines Corporation Technique for forming resin-impregnated fiberglass sheets
KR100467897B1 (en) * 1996-12-24 2005-01-24 닛토덴코 가부시키가이샤 A semiconductor device and a process for the production thereof
JP2001510944A (en) * 1997-07-21 2001-08-07 アギラ テクノロジーズ インコーポレイテッド Semiconductor flip chip package and method of manufacturing the same
KR100571334B1 (en) 1997-07-24 2006-04-14 헨켈 록타이트 코오포레이션 Thermosetting resin composition useful as an underfill sealant
US6300686B1 (en) * 1997-10-02 2001-10-09 Matsushita Electric Industrial Co., Ltd. Semiconductor chip bonded to a thermal conductive sheet having a filled through hole for electrical connection
US20010020071A1 (en) 1997-10-10 2001-09-06 Capote Miguel Albert High performance cyanate-bismaleimide-epoxy resin compositions for printed circuits and encapsulants
WO1999021917A1 (en) * 1997-10-23 1999-05-06 Ciba Specialty Chemicals Holding Inc. Hardener for anhydride group-containing polymers
JP3184485B2 (en) 1997-11-06 2001-07-09 三井金属鉱業株式会社 Resin composition for copper clad laminate, copper foil with resin, multilayer copper clad laminate and multilayer printed wiring board
US6194490B1 (en) 1998-02-27 2001-02-27 Vantico, Inc. Curable composition comprising epoxidized natural oils
US6228678B1 (en) 1998-04-27 2001-05-08 Fry's Metals, Inc. Flip chip with integrated mask and underfill
US6265776B1 (en) 1998-04-27 2001-07-24 Fry's Metals, Inc. Flip chip with integrated flux and underfill
JP4098403B2 (en) 1998-06-01 2008-06-11 富士通株式会社 Adhesive, bonding method, and assembly of mounting substrate
US6350840B1 (en) 1998-07-02 2002-02-26 National Starch And Chemical Investment Holding Corporation Underfill encapsulants prepared from allylated amide compounds
US6057381A (en) 1998-07-02 2000-05-02 National Starch And Chemical Investment Holding Corporation Method of making an electronic component using reworkable underfill encapsulants
US6063828A (en) 1998-07-02 2000-05-16 National Starch And Chemical Investment Holding Corporation Underfill encapsulant compositions for use in electronic devices
AU2165100A (en) 1998-12-07 2000-06-26 Dexter Corporation, The Underfill film compositions
US6528345B1 (en) * 1999-03-03 2003-03-04 Intel Corporation Process line for underfilling a controlled collapse
US6331446B1 (en) * 1999-03-03 2001-12-18 Intel Corporation Process for underfilling a controlled collapse chip connection (C4) integrated circuit package with an underfill material that is heated to a partial gel state
JP3601443B2 (en) 1999-11-30 2004-12-15 日立化成工業株式会社 Adhesive film, method of manufacturing the same, wiring board for mounting semiconductor, and semiconductor device
JP3562465B2 (en) 1999-11-30 2004-09-08 日立化成工業株式会社 Adhesive composition, adhesive film and wiring board for mounting semiconductor
KR20010054743A (en) 1999-12-08 2001-07-02 윤종용 Semiconductor package comprising double underfill area
JP2001205211A (en) * 2000-01-28 2001-07-31 Sanyo Electric Co Ltd Plasma cleaning apparatus
US6498260B2 (en) * 2000-03-29 2002-12-24 Georgia Tech Research Corp. Thermally degradable epoxy underfills for flip-chip applications
US6307001B1 (en) 2000-05-18 2001-10-23 National Starch And Chemical Investment Holding Corporation Curable hybrid electron donor compounds containing vinyl ether
US6441213B1 (en) 2000-05-18 2002-08-27 National Starch And Chemical Investment Holding Corporation Adhesion promoters containing silane, carbamate or urea, and donor or acceptor functionality
WO2002048234A2 (en) * 2000-12-14 2002-06-20 Dow Global Technologies Inc. Epoxy resins and process for making the same
US6686425B2 (en) * 2001-06-08 2004-02-03 Adhesives Research, Inc. High Tg acrylic polymer and epoxy-containing blend therefor as pressure sensitive adhesive
US6833629B2 (en) 2001-12-14 2004-12-21 National Starch And Chemical Investment Holding Corporation Dual cure B-stageable underfill for wafer level

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3244051A1 (en) 1981-12-01 1983-07-14 Illinois Tool Works Inc., 60631 Chicago, Ill. POLYMERIZABLE ADHESIVE MIXTURE AND METHOD FOR PRODUCING A QUICKLY SETTING, STRONG, PERMANENT, HEAT AND SOLVENT RESISTANT ADHESIVE BONDING WITH THE ADHESIVE MIXTURE
EP0160621A2 (en) 1984-04-28 1985-11-06 Ciba-Geigy Ag Curable compositions
JPS6381187A (en) 1986-09-25 1988-04-12 Ibiden Co Ltd Thermosetting adhesive sheet
JPS63154780A (en) 1986-12-18 1988-06-28 Ibiden Co Ltd Adhesive composition and method of using the same as adhesive
US5261156A (en) 1991-02-28 1993-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of electrically connecting an integrated circuit to an electric device
US5579573A (en) 1994-10-11 1996-12-03 Ford Motor Company Method for fabricating an undercoated chip electrically interconnected to a substrate
EP0982385A1 (en) 1997-05-12 2000-03-01 Fujitsu Limited Adhesive, method for bonding, and assemblies of mounted boards
WO1999067324A1 (en) 1998-06-22 1999-12-29 Loctite Corporation Thermosetting resin compositions useful as underfill sealants
JP2001015551A (en) 1999-06-29 2001-01-19 Toshiba Corp Semiconductor device and its manufacture
US6388321B1 (en) 1999-06-29 2002-05-14 Kabushiki Kaisha Toshiba Anisotropic conductive film and resin filling gap between a flip-chip and circuit board
JP2001323246A (en) 2000-03-07 2001-11-22 Sony Chem Corp Adhesive for connecting electrode and bonding method using the adhesive
US20030029559A1 (en) 2000-03-07 2003-02-13 Sony Chemical Corp. Adhesive for connecting electrodes and adhesion methods with the use of the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
G. CARSON ET AL.: "Underfill-Technologie", MATERIALIEN DER NÄCHSTEN GENERATION, vol. 12, 2006, pages 64

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EP1461829A2 (en) 2004-09-29
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KR100932998B1 (en) 2009-12-21
WO2003052813A2 (en) 2003-06-26
US6833629B2 (en) 2004-12-21
US20030141592A1 (en) 2003-07-31
ATE383655T1 (en) 2008-01-15
KR20040068145A (en) 2004-07-30
WO2003052813A3 (en) 2004-02-19
TW200305608A (en) 2003-11-01
EP1461829B1 (en) 2008-01-09
AU2002366498A1 (en) 2003-06-30
TWI238476B (en) 2005-08-21
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DK1461829T3 (en) 2008-05-19
DE60224581D1 (en) 2008-02-21

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