EP1461829B2 - Dual cure b-stageable underfill for wafer level - Google Patents
Dual cure b-stageable underfill for wafer level Download PDFInfo
- Publication number
- EP1461829B2 EP1461829B2 EP02805072.2A EP02805072A EP1461829B2 EP 1461829 B2 EP1461829 B2 EP 1461829B2 EP 02805072 A EP02805072 A EP 02805072A EP 1461829 B2 EP1461829 B2 EP 1461829B2
- Authority
- EP
- European Patent Office
- Prior art keywords
- composition
- curing
- underfill
- compounds
- imidazole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000009977 dual effect Effects 0.000 title description 4
- 239000000203 mixture Substances 0.000 claims abstract description 107
- 239000000463 material Substances 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 36
- 239000004593 Epoxy Substances 0.000 claims description 21
- 150000008064 anhydrides Chemical class 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 11
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 claims description 8
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 claims description 7
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical class O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 claims description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 5
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 claims description 4
- 125000000490 cinnamyl group Chemical group C(C=CC1=CC=CC=C1)* 0.000 claims description 4
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 24
- 229910000679 solder Inorganic materials 0.000 description 23
- 235000012431 wafers Nutrition 0.000 description 17
- 239000003795 chemical substances by application Substances 0.000 description 14
- 239000002904 solvent Substances 0.000 description 13
- 239000011521 glass Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 229920000647 polyepoxide Polymers 0.000 description 12
- 239000008393 encapsulating agent Substances 0.000 description 11
- 238000009472 formulation Methods 0.000 description 10
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 8
- 239000003822 epoxy resin Substances 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 229920002472 Starch Polymers 0.000 description 6
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 6
- TVIDDXQYHWJXFK-UHFFFAOYSA-N dodecanedioic acid Chemical compound OC(=O)CCCCCCCCCCC(O)=O TVIDDXQYHWJXFK-UHFFFAOYSA-N 0.000 description 6
- 239000008107 starch Substances 0.000 description 6
- 235000019698 starch Nutrition 0.000 description 6
- 230000005496 eutectics Effects 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 239000003999 initiator Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 150000003254 radicals Chemical class 0.000 description 4
- KUBDPQJOLOUJRM-UHFFFAOYSA-N 2-(chloromethyl)oxirane;4-[2-(4-hydroxyphenyl)propan-2-yl]phenol Chemical compound ClCC1CO1.C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 KUBDPQJOLOUJRM-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- -1 N-substituted imidazoles Chemical class 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229940106691 bisphenol a Drugs 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- KDMCQAXHWIEEDE-UHFFFAOYSA-L cobalt(2+);7,7-dimethyloctanoate Chemical compound [Co+2].CC(C)(C)CCCCCC([O-])=O.CC(C)(C)CCCCCC([O-])=O KDMCQAXHWIEEDE-UHFFFAOYSA-L 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 150000003923 2,5-pyrrolediones Chemical class 0.000 description 2
- RZVINYQDSSQUKO-UHFFFAOYSA-N 2-phenoxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC1=CC=CC=C1 RZVINYQDSSQUKO-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Natural products CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000002318 adhesion promoter Substances 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- PYMYPHUHKUWMLA-LMVFSUKVSA-N aldehydo-D-ribose Chemical compound OC[C@@H](O)[C@@H](O)[C@@H](O)C=O PYMYPHUHKUWMLA-LMVFSUKVSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002118 epoxides Chemical group 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 2
- 235000020778 linoleic acid Nutrition 0.000 description 2
- OYHQOLUKZRVURQ-HZJYTTRNSA-N linoleic acid group Chemical group C(CCCCCCC\C=C/C\C=C/CCCCC)(=O)O OYHQOLUKZRVURQ-HZJYTTRNSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 2
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 235000021313 oleic acid Nutrition 0.000 description 2
- 150000002889 oleic acids Chemical class 0.000 description 2
- 239000006254 rheological additive Substances 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 238000005382 thermal cycling Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 1
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 1
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 description 1
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 1
- AVTLBBWTUPQRAY-UHFFFAOYSA-N 2-(2-cyanobutan-2-yldiazenyl)-2-methylbutanenitrile Chemical compound CCC(C)(C#N)N=NC(C)(CC)C#N AVTLBBWTUPQRAY-UHFFFAOYSA-N 0.000 description 1
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 1
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 1
- OEPOKWHJYJXUGD-UHFFFAOYSA-N 2-(3-phenylmethoxyphenyl)-1,3-thiazole-4-carbaldehyde Chemical compound O=CC1=CSC(C=2C=C(OCC=3C=CC=CC=3)C=CC=2)=N1 OEPOKWHJYJXUGD-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- HHEORJZSUXVOSI-UHFFFAOYSA-N 3-[1,3-bis(oxiran-2-ylmethoxy)propan-2-yloxy]propane-1,2-diol Chemical compound C1OC1COCC(OCC(O)CO)COCC1CO1 HHEORJZSUXVOSI-UHFFFAOYSA-N 0.000 description 1
- VUDVMZJIPVHGTG-UHFFFAOYSA-N 3-butyl-4-phenylpyrrole-2,5-dione Chemical compound O=C1NC(=O)C(CCCC)=C1C1=CC=CC=C1 VUDVMZJIPVHGTG-UHFFFAOYSA-N 0.000 description 1
- YAXXOCZAXKLLCV-UHFFFAOYSA-N 3-dodecyloxolane-2,5-dione Chemical compound CCCCCCCCCCCCC1CC(=O)OC1=O YAXXOCZAXKLLCV-UHFFFAOYSA-N 0.000 description 1
- SUCSMRZALXNRJM-UHFFFAOYSA-N 3-methyl-4-(4-methyl-7-oxabicyclo[4.1.0]heptan-4-yl)-7-oxabicyclo[4.1.0]heptane Chemical compound C1CC2OC2CC1(C)C1CC2OC2CC1C SUCSMRZALXNRJM-UHFFFAOYSA-N 0.000 description 1
- OECTYKWYRCHAKR-UHFFFAOYSA-N 4-vinylcyclohexene dioxide Chemical compound C1OC1C1CC2OC2CC1 OECTYKWYRCHAKR-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 1
- NHJIDZUQMHKGRE-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]heptan-4-yl 2-(7-oxabicyclo[4.1.0]heptan-4-yl)acetate Chemical compound C1CC2OC2CC1OC(=O)CC1CC2OC2CC1 NHJIDZUQMHKGRE-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- KWYHVTQJLPAENK-UXBLZVDNSA-O CCO[SiH+]CCCNC(OC/C=C/c1ccccc1)=O Chemical compound CCO[SiH+]CCCNC(OC/C=C/c1ccccc1)=O KWYHVTQJLPAENK-UXBLZVDNSA-O 0.000 description 1
- GUBGYTABKSRVRQ-CUHNMECISA-N D-Cellobiose Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@H]1O[C@@H]1[C@@H](CO)OC(O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-CUHNMECISA-N 0.000 description 1
- GUBGYTABKSRVRQ-UHFFFAOYSA-N D-Cellobiose Natural products OCC1OC(OC2C(O)C(O)C(O)OC2CO)C(O)C(O)C1O GUBGYTABKSRVRQ-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 1
- 229920000459 Nitrile rubber Polymers 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 229920002732 Polyanhydride Polymers 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- YXEBFFWTZWGHEY-UHFFFAOYSA-N [1-(hydroxymethyl)cyclohex-3-en-1-yl]methanol Chemical compound OCC1(CO)CCC=CC1 YXEBFFWTZWGHEY-UHFFFAOYSA-N 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- PYMYPHUHKUWMLA-UHFFFAOYSA-N arabinose Natural products OCC(O)C(O)C(O)C=O PYMYPHUHKUWMLA-UHFFFAOYSA-N 0.000 description 1
- SRBFZHDQGSBBOR-UHFFFAOYSA-N beta-D-Pyranose-Lyxose Natural products OC1COC(O)C(O)C1O SRBFZHDQGSBBOR-UHFFFAOYSA-N 0.000 description 1
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 1
- 239000004842 bisphenol F epoxy resin Substances 0.000 description 1
- NTXGQCSETZTARF-UHFFFAOYSA-N buta-1,3-diene;prop-2-enenitrile Chemical compound C=CC=C.C=CC#N NTXGQCSETZTARF-UHFFFAOYSA-N 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000011353 cycloaliphatic epoxy resin Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- BQQUFAMSJAKLNB-UHFFFAOYSA-N dicyclopentadiene diepoxide Chemical compound C12C(C3OC33)CC3C2CC2C1O2 BQQUFAMSJAKLNB-UHFFFAOYSA-N 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical class C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical compound FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 description 1
- WSFSSNUMVMOOMR-UHFFFAOYSA-N formaldehyde Substances O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000000543 intermediate Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229960004063 propylene glycol Drugs 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- JIYNFFGKZCOPKN-UHFFFAOYSA-N sbb061129 Chemical compound O=C1OC(=O)C2C1C1C=C(C)C2C1 JIYNFFGKZCOPKN-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000012056 semi-solid material Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 239000010455 vermiculite Substances 0.000 description 1
- 229910052902 vermiculite Inorganic materials 0.000 description 1
- 235000019354 vermiculite Nutrition 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 239000010456 wollastonite Substances 0.000 description 1
- 229910052882 wollastonite Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83856—Pre-cured adhesive, i.e. B-stage adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01056—Barium [Ba]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01075—Rhenium [Re]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01087—Francium [Fr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
Definitions
- This invention relates to B-stageable underfill compositions suitable for application to a silicon wafer before singulation.
- the compositions contain two separately curing chemistries.
- Microelectronic devices contain millions of electrical circuit components that are electrically connected to each other and electrically connected to and mechanically supported on a carrier or a substrate. The connections are made between electrical terminations on the electronic component and corresponding electrical terminations on the substrate.
- One method for making these interconnections uses polymeric or metallic material that is applied in bumps to the component or substrate terminals.
- the terminals are aligned and contacted together and the resulting assembly is heated to reflow the metallic or polymeric material and solidify the connection.
- the electronic assembly is subjected to cycles of elevated and lowered temperatures. Due to the differences in the coefficient of thermal expansion for the electronic component, the interconnect material, and the substrate, this thermal cycling can stress the components of the assembly and cause it to fail. To prevent failure, the gap between the component and the substrate is filled with a polymeric encapsulant, hereinafter called underfill or underfill encapsulant, to reinforce the interconnect material and to absorb some of the stress of the thermal cycling.
- underfill or underfill encapsulant a polymeric encapsulant
- CSP chip scale packages
- the underfill dispensing and curing take place after the reflow of the metallic or polymeric interconnect.
- the interconnect is a metal solder composition
- a fluxing agent initially is applied on the metal terminal pads on the substrate.
- the semiconductor chip is placed on the fluxed area of the soldering site.
- the assembly is then heated to allow for reflow of the solder joint, or reflow of the polymeric interconnect.
- a measured amount of underfill is dispensed along one or more peripheral sides of the electronic assembly and capillary action within the component-to-substrate gap draws the material inward.
- additional underfill encapsulant may be dispensed along the complete assembly periphery to help reduce stress concentrations and prolong the fatigue life of the assembled structure.
- the underfill encapsulant is subsequently cured to reach its optimized final properties.
- the underfill is dispensed onto the substrate.
- a bumped chip is placed active-face down on the underfill and the assembly heated to establish the solder or polymeric interconnections and cure the underfill.
- the underfill In order to be useful as a wafer level underfill encapsulant, the underfill must have several properties. The material must be easy to apply uniformly on the wafer so that the entire wafer has a consistent coating. During the final attachment of the individual chips to a substrate, the underfill must flow to enable fillet formation, flux the solder bumps if solder was used and provide good adhesion. Whether the interconnection of the chip to the substrate is made with solder or with polymeric material, curing of the underfill should occur after the interconnection is formed and should occur rapidly.
- the underfill must be able to be solidified after application to the wafer so as not to interfere with the clean dicing of the wafer into individual chips.
- the solidification of the underfill encapsulant is done by a process called B-staging, which means that the underfill material undergoes an initial heating after its placement on the wafer to result in a smooth, non-tacky coating without residual solvent.
- the starting underfill material is a solid
- the solid is dispersed or dissolved in a solvent to form a paste and the paste applied to the wafer.
- the underfill is then heated to evaporate the solvent, leaving a solid, but uncured, underfill on the wafer.
- the starting underfill material is a liquid or paste
- the underfill is dispensed onto the wafer and heated to partially cure it to a solid state.
- the B-stage heating typically occurs at a temperature lower than 150°C, preferably within the range of about 100°C to about 150°C.
- the final curing of the underfill encapsulant must be delayed until after solder fluxing (when solder is the interconnect material) and the forming of the interconnection, which occurs at a temperature of 183°C in the case of tin-lead eutectic solder.
- This invention is an underfill composition
- two chemical compositions have curing temperatures or curing temperature ranges sufficiently separated to allow the composition with the lower curing temperature, hereinafter the first composition, to cure without curing the composition with the higher curing temperature, hereinafter the second composition, and in which the second composition is an epoxy compound with an imidazole/anhydride adduct.
- the first composition will be cured during a B-staging process, and the second composition will be left uncured until a final cure is desired, such as, at the final attach of a semiconductor chip to a substrate.
- the fully cured material is cross-linked or polymerized to a sufficiently high molecular weight effective to give it structural integrity.
- Each of the first and second composition is one or more monomeric, one or more oligomeric, or one or more polymeric compounds or resins, or combinations of those, that co-react to polymerize or cross-link. Both polymerization and cross-linking are referred to as curing.
- the compositions according to the claims in general will contain a curing agent or curing initiator in addition to the monomeric, oligomeric, or polymeric species, and optionally, may contain a solvent.
- the combination of the first and second compositions will be referred to as the total B-stageable underfill.
- the first composition will comprise a liquid, or a solid dissolved or dispersed in a solvent.
- the second composition will be a solid or semi-solid material at room temperature, dispersible or dissolvable either in the liquid first composition, or in the same or a compatible solvent for the first composition.
- the choice of first and second compositions will be determined in part by the temperature at which the final interconnection of the semiconductor chip to its substrate is made.
- the solder fluxing and interconnection occurs at a temperature of 183°C.
- the final curing of the underfill should occur rapidly after the solder bump flow and interconnection and may occur at the solder reflow temperature or at a higher temperature. Consequently, in this case, the second composition will be chosen to have a curing temperature near or at 183°C or slightly higher. If a polymeric interconnect material is used, the second composition will be chosen to have a curing temperature at or near the curing temperature of the polymeric interconnect.
- the first composition is chosen so that it will cure before the curing temperature of the second composition and before the temperature at which the interconnect is made.
- the curing temperatures of the first and second compositions can be separated by any amount effective to provide two distinct curing profiles such that the second composition does not cure at or within the curing temperature range of the first composition, although insignificant curing of the second composition during the B-stage process is tolerable.
- the curing temperatures of the first and second compositions will be separated by at least 30°C.
- the B-stage heating that is, the first composition curing, occurs at a temperature within the range of about 100°C to about 150°C. Any solvent used should be chosen to evaporate off within the same temperature range as first composition curing. Curing the first composition and evaporating the solvent during the B-stage process will solidify the total underfill composition, permit clean dicing of the wafer, and inhibit voiding during the final attachment process.
- the total underfill composition When heated to the appropriate attach temperature for the semiconductor die, the total underfill composition should melt and flow sufficiently to completely wet-out the surface of the substrate. An efficient wet-out results in good adhesion.
- the curing processes can be initiated and advanced by irradiation (such as with UV light) for the B-staging first cure, and then by heat for the final cure, or both the B-staging and final cure can be initiated and advanced by heat.
- irradiation such as with UV light
- heat for the final cure
- first and second compositions will be present in a molar ratio of 5:95 to 95:5, as can be determined by the practitioner for specific end uses.
- Combinations of first compositions and second compositions of the total B-stageable underfill include:
- thermally curable acrylic such as those available from Sartomer
- maleimide such as those available from Ciba Specialty Chemicals or National Starch and Chemical Company
- vinyl compounds such as vinyl ethers and vinyl silanes available from Aldrich
- thermally curable epoxy compounds or resins such as those available from National Starch, CIBA, Sumitomo or Dainippon
- thermally curable acrylic compounds such as those available from Sartomer
- free radical curing agents such as those available from Sartomer
- thermally curable epoxy compounds or resins such as those available from National Starch, CIBA, Sumitomo or Dainippon
- imidazole/anhydride adduct such as those available from National Starch, CIBA, Sumitomo or Dainippon
- thermally initiated, free radical curable bismaleimide compounds (electron acceptors) (such as those available from Ciba Specialty Chemicals or National Starch and Chemical Company) with (electron donors) vinyl ethers, vinyl silanes, styrenic compounds, cinnamyl compounds.
- thermally curable epoxy compounds such as those available from National Starch, CIBA, Sumitomo or Dainippon with an imidazole/anhydride adduct.
- suitable epoxy resins include monofunctional and multifunctional glycidyl ethers of Bisphenol-A and Bisphenol-F, aliphatic and aromatic epoxies, saturated and unsaturated epoxies, cycloaliphatic epoxy resins and combinations of those.
- Preferred epoxy resins are glycidyl ether epoxies, either separately or in combination with non-glycidyl ether epoxies.
- a preferred epoxy resin of this type is bisphenol A epoxy resin.
- Bisphenol-A type resin is commercially available from Resolution Technology as EPON 828.
- Another preferred epoxy resin is bisphenol F epoxy resin, prepared by the reaction of one mole of bisphenol F resin and two moles of epichlorohydrin.
- Bisphenol-F type resins are available commercially from CVC Specialty Chemicals, Maple Shade, New Jersey, under the designation 8230E, and from Resolution Performance Products LLC under the designation RSL1739.
- a blend of bisphenol-A and bisphenol-F is available from Nippon Chemical Company under the designation ZX-1059.
- epoxy novolac resin is prepared by the reaction of phenolic resin and epichlorohydrin.
- a preferred epoxy novolac resin is poly(phenyl glycidyl ether)-co-formaldehyde.
- biphenyl epoxy resin commonly prepared by the reaction of biphenyl resin and epichlorohydrin; dicyclopentadiene-phenol epoxy resin; naphthalene resins; epoxy functional butadiene acrylonitrile copolymers; epoxy functional polydimethyl siloxane; and mixtures of the above.
- Non-glycidyl ether epoxides may also be used. Suitable examples include 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexane carboxylate, which contains two epoxide groups that are part of the ring structures and an ester linkage; vinylcyclohexene dioxide, which contains two epoxide groups and one of which is part of the ring structure; 3,4-epoxy-6-methyl cyclohexyl methyl-3,4-epoxycyclohexane carboxylate; and dicyclopentadiene dioxide.
- 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexane carboxylate which contains two epoxide groups that are part of the ring structures and an ester linkage
- vinylcyclohexene dioxide which contains two epoxide groups and one of which is part of the ring structure
- Suitable epoxies include:
- the catalyst for the epoxy compositions used in the total B-stageable underfill is an imidazole-anhydride adduct. If the curing agent acts too quickly, it can gel the formulation and inhibit the fluxing of the solder.
- the use of the imidazole-anhydride adduct keeps the formulation viscosity at a sufficiently low level, usually below 5,000 mPa.s at 190°C, to ensure that fluxing can occur.
- Preferred imidazoles for forming the adduct include non-N-substituted imidazoles, such as, 2-phenyl-4-methyl imidazole, 2-phenyl imidazole, and imidazole.
- Other useful imidazole components for the adduct include alkyl-substituted imidazoles, N-substituted imidazoles, and mixtures of those.
- Preferred anhydrides for forming the adduct are cycloaliphatic anhydrides, such as, pyromellitic dianhydride, commercially available as PMDA from Aldrich.
- Other suitable anhydrides include methylhexa-hydro phthalic anhydride (commercially available as MHHPA from Lonza Inc. Intermediates and Actives) methyltetra-hydrophthalic anhydride, nadic methyl anhydride, hexa-hydro phthalic anhydride, tetra-hydro phthalic anhydride, phthalic anhydride, dodecyl succinic anhydride, bisphenyl dianhydride, benzophenone tetracarboxylic dianhydride, and mixtures of those.
- Two preferred adducts are a complex of 1 part 1,2,4,5-benzenetetracarboxylic anhydride and 4 parts 2-phenyl-4-methylimidazole, and a complex of 1 part 1,2,4,5-benzenetetracarboxylic dianhydride and 2 parts 2-phenyl-4-methylimidazole.
- the adducts are prepared by dissolving the components in a suitable solvent, such as acetone, under heat. Upon cooling the adduct precipitates out.
- the total B-stageable underfill optionally further may comprise a solvent, an inorganic filler, and a fluxing agent.
- a solvent an inorganic filler
- a fluxing agent an inorganic filler
- Other optional components that may be used at the formulator's discretion include one or more air release agents, flow additives, adhesion promoters, rheology modifiers, and surfactants. The components are specifically chosen to obtain the desired balance of properties for the use of the chemistry sets chosen.
- Suitable cinnamyl donors for use with maleimides include: in which C 36 represents a linear or branched alkyl of 36 carbons derived from linoleic and oleic acids.
- Suitable styrenic donors for use with maleimides include: in which C 36 represents a linear or branched alkyl of 36 carbons derived from linoleic and oleic acids.
- the underfill composition may also include a fluxing agent to remove metal oxide from the electrical terminal pads and to prevent reoxidation.
- a fluxing agent to remove metal oxide from the electrical terminal pads and to prevent reoxidation.
- a variety of different fluxing materials may be employed, although the preferred fluxing agent will be a carboxylic acid or anhydride.
- Preferred fluxing agents include polysebasic polyanhydride, rosin gum, dodecanedioic acid (commercially available as Corfree M2 from Aldrich), adipic acid, tartaric acid, and citric acid.
- Other suitable fluxing agents include alcohols, hydroxyl acids and hydroxyl bases.
- Preferable fluxing materials include polyols such as ethylene glycol, glyercol, 3-[bis(glycidyl oxy methyl) methoxy]-1,2-propane diol, D-ribose, D-cellobiose, cellulose, and 3-cyclohexene-1,1-dimethanol.
- polyols such as ethylene glycol, glyercol, 3-[bis(glycidyl oxy methyl) methoxy]-1,2-propane diol, D-ribose, D-cellobiose, cellulose, and 3-cyclohexene-1,1-dimethanol.
- solvents can be utilized to modify the viscosity of the composition, and if used should be chosen so that they evaporate during the B-stage heating.
- B-stage heating will occur in the range of about 100°C to about 150°C.
- solvents include ketones, esters, alcohols, ethers, and other solvents that are stable and dissolve the composition's components.
- Preferred solvents include ⁇ -butyrolactone and propylene glycol methyl ethyl acetate.
- Suitable fillers for underfill materials are nonconductive and include particles of vermiculite, mica, wollastonite, calcium carbonate, titania, sand, glass, fused silica, fumed silica, barium sulfate, and halogenated ethylene polymers, such as tetrafluoroethylene, trifluoro-ethylene, vinylidene fluoride, vinyl fluoride, vinylidene chloride, and vinyl chloride. If used, fillers generally will be present in amounts up to 98% by weight of the formulation.
- Curing agents such as free radical initiators, thermal initiators, and photoinitiators will be present in an effective amount to cure the composition. In general, those amounts will range from 0.1 % to 30%, preferably 1 % to 20%, by weight of the total organic material (that is, excluding any inorganic fillers) in the composition.
- Preferred free-radical initiators include peroxides, such as butyl peroctoates and dicumyl peroxide, commercial products, such as USP90MD (a product of Witco), and azo compounds, such as (VAZ052 and VAZ064 (products of Dupont), 2,2'-azobis(2-methyl-propanenitrile) and 2,2'-azobis(2-methyl-butanenitrile).
- Preferred photoinitiators are those sold by Ciba Specialty Chemicals under the trademark Irgacure.
- first compositions it may be advantageous to include a curing accelerator, such as cobalt neodecanoate, to lower the curing temperature. If added, curing accelerators will be present in an amount from about 0.05% to about 1.0% by weight of the organic components of the first composition, excluding the organic components of the second composition and any fillers. It may in some cases also be advantageous to add a cationic curing agent, such as Rhodorsil 2074.
- a curing accelerator such as cobalt neodecanoate
- Silicon wafers have an active face, on which the microcircuitry is embedded, and a passive face.
- the dual cure underfill compositions of this invention are stenciled onto the active face of the silicon wafer.
- this invention is a silicon wafer with an active face containing circuitry on which has been deposited a B-stageable underfill, the B-stageable underfill comprising a first composition with a lower curing temperature as described previously and a second composition with a higher curing temperature as described previously, characterized in that the first composition has been fully cured, and in which the second composition is an epoxy compound and an imidazole/anhydride adduct.
- EXAMPLE 1 Two compositions with dual cure capability were prepared and tested to determine the appropriate parameters for B-staging and to demonstrate proper interconnection formation. The components in parts by weight are recorded in Table 1.
- Achieving proper B-staging parameters is important for both the dicing of the wafer and for the eventual attach of the semiconductor chip to its substrate. If the formulation is heated (B-staged) for less than the optimal time, the underfill will be tacky and will affect the dicing process. If the material is heated (B-staged) at too high a temperature or for too long a time period, the second composition will start to cure. If the second composition starts to cure, the over-B-staged coating on the chip will not flow during attachment of the chip to the substrate, which affects the adhesion of the underfill encapsulant and eventually the performance of the semiconductor package.
- test vehicle used to determine the ability of the compositions to be B-staged and the appropriate parameters for B-staging was a glass slide bumped with eutectic solder balls 20 mil in diameter.
- Formulations A and B were stenciled independently onto the test vehicles to a height of 20 mil.
- the test vehicles were heated at 130°C under vacuum in a NAPCO vacuum oven, model 5831, with vacuum reading at 73.66 cm (29 inch) Hg for 30 minutes and at each 10 minute interval up to 100 minutes.
- test vehicles were checked for a non-tacky, uniform, and smooth coating by visual observation and manual touching.
- test vehicles were also investigated for curing of the second composition. After each time period for heating as described above, the test vehicle was placed underfill side down onto a piece of FR-4 Board with copper finish. This assembly was then passed through a reflow oven with a typical reflow temperature profile with the highest temperature at 240°C. The assembly was visually checked through the glass slide for fluxing of the solder balls and attachment between the glass slide test vehicle and the FR-4 board. Enlarged solder balls are indicative of fluxing. The absence of fluxing is indicative of curing of the second composition, which would constrain the solder and inhibit it from flowing. The absence of fluxing also prevents the attachment of the test vehicle to the FR-4 board.
- the optimal B-stage period depends on the thickness of the underfill encapsulant and the chemical composition of the formulations. In general, the thicker the underfill encapsulant, the longer the required B-stage time period. Determination of the optimal B-stage time is within the expertise of one skilled in the art with the disclosures of this specification.
- EXAMPLE 2 This example demonstrates the ability of the dual curable underfill compositions to flux eutectic Pb/Sn solder and enable the formation of interconnection with the substrate.
- the same Formulations A and B used in Example 1 were used here.
- Eutectic solder balls 20 mils in diameter were placed onto a glass slide.
- the underfill material was coated onto the glass slides to a thickness of around 20 mils by stenciling.
- the glass slides were then placed on a hot-plate, preheated at 135°C, and held at that temperature for 50 minutes. A smooth, void free, non-tacky coating was obtained.
- the coated glass slide was then placed (coated side down) on a piece of copper finished FR-4 substrate.
- the FR-4 substrate (with the coated glass slide on its top) was placed on a hot-plate that was pre-heated to 240°C. It was observed that the solder balls increased in area and the slide collapsed onto the substrate, indicating that the solder fluxed and an interconnection between chip and substrate would have been formed.
- the underfill also wetted the substrate and flowed to form a complete fillet around the glass slide.
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Wire Bonding (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Solid Fuels And Fuel-Associated Substances (AREA)
- Looms (AREA)
- Furnace Charging Or Discharging (AREA)
- Silicon Polymers (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Polymerisation Methods In General (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Processes Of Treating Macromolecular Substances (AREA)
Abstract
Description
- This invention relates to B-stageable underfill compositions suitable for application to a silicon wafer before singulation. The compositions contain two separately curing chemistries.
- Microelectronic devices contain millions of electrical circuit components that are electrically connected to each other and electrically connected to and mechanically supported on a carrier or a substrate. The connections are made between electrical terminations on the electronic component and corresponding electrical terminations on the substrate.
- One method for making these interconnections uses polymeric or metallic material that is applied in bumps to the component or substrate terminals. The terminals are aligned and contacted together and the resulting assembly is heated to reflow the metallic or polymeric material and solidify the connection.
- During its normal service life, the electronic assembly is subjected to cycles of elevated and lowered temperatures. Due to the differences in the coefficient of thermal expansion for the electronic component, the interconnect material, and the substrate, this thermal cycling can stress the components of the assembly and cause it to fail. To prevent failure, the gap between the component and the substrate is filled with a polymeric encapsulant, hereinafter called underfill or underfill encapsulant, to reinforce the interconnect material and to absorb some of the stress of the thermal cycling.
- Two prominent uses for underfill technology are for reinforcing packages known in the industry as chip scale packages (CSP), in which a chip package is attached to a substrate and flip-chip packages in which a chip is attached by an array of interconnections to a substrate.
- In conventional underfill applications, the underfill dispensing and curing take place after the reflow of the metallic or polymeric interconnect. If the interconnect is a metal solder composition, a fluxing agent initially is applied on the metal terminal pads on the substrate. The semiconductor chip is placed on the fluxed area of the soldering site. The assembly is then heated to allow for reflow of the solder joint, or reflow of the polymeric interconnect. Next, a measured amount of underfill is dispensed along one or more peripheral sides of the electronic assembly and capillary action within the component-to-substrate gap draws the material inward. After the gap is filled, additional underfill encapsulant may be dispensed along the complete assembly periphery to help reduce stress concentrations and prolong the fatigue life of the assembled structure. The underfill encapsulant is subsequently cured to reach its optimized final properties.
- In another conventional method, the underfill is dispensed onto the substrate. A bumped chip is placed active-face down on the underfill and the assembly heated to establish the solder or polymeric interconnections and cure the underfill.
- Recently, attempts have been made to streamline the process and increase efficiency by placing the underfill encapsulant directly onto the semiconductor wafer before it is diced into individual chips. This procedure, which can be performed via various methods, including screen printing, stencil printing and spin coating, allows for a single application of underfill to a semiconductor wafer, which is later diced into multiple individual chips.
The preamble of claim 1 is known from documentUS-B-6 242 513 . - In order to be useful as a wafer level underfill encapsulant, the underfill must have several properties. The material must be easy to apply uniformly on the wafer so that the entire wafer has a consistent coating. During the final attachment of the individual chips to a substrate, the underfill must flow to enable fillet formation, flux the solder bumps if solder was used and provide good adhesion. Whether the interconnection of the chip to the substrate is made with solder or with polymeric material, curing of the underfill should occur after the interconnection is formed and should occur rapidly.
- Another important property is that the underfill must be able to be solidified after application to the wafer so as not to interfere with the clean dicing of the wafer into individual chips. The solidification of the underfill encapsulant is done by a process called B-staging, which means that the underfill material undergoes an initial heating after its placement on the wafer to result in a smooth, non-tacky coating without residual solvent.
- If the starting underfill material is a solid, the solid is dispersed or dissolved in a solvent to form a paste and the paste applied to the wafer. The underfill is then heated to evaporate the solvent, leaving a solid, but uncured, underfill on the wafer. If the starting underfill material is a liquid or paste, the underfill is dispensed onto the wafer and heated to partially cure it to a solid state.
- The B-stage heating typically occurs at a temperature lower than 150°C, preferably within the range of about 100°C to about 150°C. The final curing of the underfill encapsulant must be delayed until after solder fluxing (when solder is the interconnect material) and the forming of the interconnection, which occurs at a temperature of 183°C in the case of tin-lead eutectic solder.
- This invention is an underfill composition comprising two chemical compositions have curing temperatures or curing temperature ranges sufficiently separated to allow the composition with the lower curing temperature, hereinafter the first composition, to cure without curing the composition with the higher curing temperature, hereinafter the second composition, and in which the second composition is an epoxy compound with an imidazole/anhydride adduct. In practice, the first composition will be cured during a B-staging process, and the second composition will be left uncured until a final cure is desired, such as, at the final attach of a semiconductor chip to a substrate. The fully cured material is cross-linked or polymerized to a sufficiently high molecular weight effective to give it structural integrity.
- Each of the first and second composition is one or more monomeric, one or more oligomeric, or one or more polymeric compounds or resins, or combinations of those, that co-react to polymerize or cross-link. Both polymerization and cross-linking are referred to as curing. The compositions according to the claims in general will contain a curing agent or curing initiator in addition to the monomeric, oligomeric, or polymeric species, and optionally, may contain a solvent. Within this specification and claims; the combination of the first and second compositions will be referred to as the total B-stageable underfill.
- The first composition will comprise a liquid, or a solid dissolved or dispersed in a solvent. The second composition will be a solid or semi-solid material at room temperature, dispersible or dissolvable either in the liquid first composition, or in the same or a compatible solvent for the first composition. The choice of first and second compositions will be determined in part by the temperature at which the final interconnection of the semiconductor chip to its substrate is made.
- For example, in the case of tin-lead eutectic solder, the solder fluxing and interconnection occurs at a temperature of 183°C. The final curing of the underfill should occur rapidly after the solder bump flow and interconnection and may occur at the solder reflow temperature or at a higher temperature. Consequently, in this case, the second composition will be chosen to have a curing temperature near or at 183°C or slightly higher. If a polymeric interconnect material is used, the second composition will be chosen to have a curing temperature at or near the curing temperature of the polymeric interconnect.
- The first composition is chosen so that it will cure before the curing temperature of the second composition and before the temperature at which the interconnect is made. The curing temperatures of the first and second compositions can be separated by any amount effective to provide two distinct curing profiles such that the second composition does not cure at or within the curing temperature range of the first composition, although insignificant curing of the second composition during the B-stage process is tolerable. In a preferred embodiment, the curing temperatures of the first and second compositions will be separated by at least 30°C.
- Typically, the B-stage heating, that is, the first composition curing, occurs at a temperature within the range of about 100°C to about 150°C. Any solvent used should be chosen to evaporate off within the same temperature range as first composition curing. Curing the first composition and evaporating the solvent during the B-stage process will solidify the total underfill composition, permit clean dicing of the wafer, and inhibit voiding during the final attachment process.
- When heated to the appropriate attach temperature for the semiconductor die, the total underfill composition should melt and flow sufficiently to completely wet-out the surface of the substrate. An efficient wet-out results in good adhesion.
- The curing processes can be initiated and advanced by irradiation (such as with UV light) for the B-staging first cure, and then by heat for the final cure, or both the B-staging and final cure can be initiated and advanced by heat.
- The first and second compositions will be present in a molar ratio of 5:95 to 95:5, as can be determined by the practitioner for specific end uses. Combinations of first compositions and second compositions of the total B-stageable underfill include:
- First: thermally curable acrylic (such as those available from Sartomer), maleimide (such as those available from Ciba Specialty Chemicals or National Starch and Chemical Company), and vinyl compounds (such as vinyl ethers and vinyl silanes available from Aldrich) with free radical curing agents. Second: thermally curable epoxy compounds or resins (such as those available from National Starch, CIBA, Sumitomo or Dainippon) with an imidazole/anhydride adduct.
- First: thermally curable acrylic compounds (such as those available from Sartomer) with free radical curing agents. Second: thermally curable epoxy compounds or resins (such as those available from National Starch, CIBA, Sumitomo or Dainippon) with an imidazole/anhydride adduct.
- First: radiation curable acrylic compounds (such as those available from Sartomer) with photoinitiators. Second: thermally curable epoxy compounds (such as those available from National Starch, CIBA, Sumitomo or Dainippon) with an imidazole/anhydride adduct.
- First: thermally initiated, free radical curable bismaleimide compounds (electron acceptors) (such as those available from Ciba Specialty Chemicals or National Starch and Chemical Company) with (electron donors) vinyl ethers, vinyl silanes, styrenic compounds, cinnamyl compounds. Second: thermally curable epoxy compounds (such as those available from National Starch, CIBA, Sumitomo or Dainippon) with an imidazole/anhydride adduct.
- Examples of suitable epoxy resins include monofunctional and multifunctional glycidyl ethers of Bisphenol-A and Bisphenol-F, aliphatic and aromatic epoxies, saturated and unsaturated epoxies, cycloaliphatic epoxy resins and combinations of those.
- Preferred epoxy resins are glycidyl ether epoxies, either separately or in combination with non-glycidyl ether epoxies. A preferred epoxy resin of this type is bisphenol A epoxy resin. Bisphenol-A type resin is commercially available from Resolution Technology as EPON 828. Another preferred epoxy resin is bisphenol F epoxy resin, prepared by the reaction of one mole of bisphenol F resin and two moles of epichlorohydrin. Bisphenol-F type resins are available commercially from CVC Specialty Chemicals, Maple Shade, New Jersey, under the designation 8230E, and from Resolution Performance Products LLC under the designation RSL1739. A blend of bisphenol-A and bisphenol-F is available from Nippon Chemical Company under the designation ZX-1059.
- Another suitable epoxy resin is epoxy novolac resin, which is prepared by the reaction of phenolic resin and epichlorohydrin. A preferred epoxy novolac resin is poly(phenyl glycidyl ether)-co-formaldehyde.
- Other suitable epoxy resins are biphenyl epoxy resin, commonly prepared by the reaction of biphenyl resin and epichlorohydrin; dicyclopentadiene-phenol epoxy resin; naphthalene resins; epoxy functional butadiene acrylonitrile copolymers; epoxy functional polydimethyl siloxane; and mixtures of the above.
- Non-glycidyl ether epoxides may also be used. Suitable examples include 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexane carboxylate, which contains two epoxide groups that are part of the ring structures and an ester linkage; vinylcyclohexene dioxide, which contains two epoxide groups and one of which is part of the ring structure; 3,4-epoxy-6-methyl cyclohexyl methyl-3,4-epoxycyclohexane carboxylate; and dicyclopentadiene dioxide.
-
- The catalyst for the epoxy compositions used in the total B-stageable underfill is an imidazole-anhydride adduct. If the curing agent acts too quickly, it can gel the formulation and inhibit the fluxing of the solder. The use of the imidazole-anhydride adduct keeps the formulation viscosity at a sufficiently low level, usually below 5,000 mPa.s at 190°C, to ensure that fluxing can occur.
- Preferred imidazoles for forming the adduct include non-N-substituted imidazoles, such as, 2-phenyl-4-methyl imidazole, 2-phenyl imidazole, and imidazole. Other useful imidazole components for the adduct include alkyl-substituted imidazoles, N-substituted imidazoles, and mixtures of those.
- Preferred anhydrides for forming the adduct are cycloaliphatic anhydrides, such as, pyromellitic dianhydride, commercially available as PMDA from Aldrich. Other suitable anhydrides include methylhexa-hydro phthalic anhydride (commercially available as MHHPA from Lonza Inc. Intermediates and Actives) methyltetra-hydrophthalic anhydride, nadic methyl anhydride, hexa-hydro phthalic anhydride, tetra-hydro phthalic anhydride, phthalic anhydride, dodecyl succinic anhydride, bisphenyl dianhydride, benzophenone tetracarboxylic dianhydride, and mixtures of those.
- Two preferred adducts are a complex of 1 part 1,2,4,5-benzenetetracarboxylic anhydride and 4 parts 2-phenyl-4-methylimidazole, and a complex of 1 part 1,2,4,5-benzenetetracarboxylic dianhydride and 2 parts 2-phenyl-4-methylimidazole. The adducts are prepared by dissolving the components in a suitable solvent, such as acetone, under heat. Upon cooling the adduct precipitates out.
- In addition to the first and second compositions and curing agents, the total B-stageable underfill optionally further may comprise a solvent, an inorganic filler, and a fluxing agent. Other optional components that may be used at the formulator's discretion include one or more air release agents, flow additives, adhesion promoters, rheology modifiers, and surfactants. The components are specifically chosen to obtain the desired balance of properties for the use of the chemistry sets chosen.
-
-
- The underfill composition may also include a fluxing agent to remove metal oxide from the electrical terminal pads and to prevent reoxidation. A variety of different fluxing materials may be employed, although the preferred fluxing agent will be a carboxylic acid or anhydride. Preferred fluxing agents include polysebasic polyanhydride, rosin gum, dodecanedioic acid (commercially available as Corfree M2 from Aldrich), adipic acid, tartaric acid, and citric acid. Other suitable fluxing agents include alcohols, hydroxyl acids and hydroxyl bases. Preferable fluxing materials include polyols such as ethylene glycol, glyercol, 3-[bis(glycidyl oxy methyl) methoxy]-1,2-propane diol, D-ribose, D-cellobiose, cellulose, and 3-cyclohexene-1,1-dimethanol.
- Optionally, solvents can be utilized to modify the viscosity of the composition, and if used should be chosen so that they evaporate during the B-stage heating. Typically, B-stage heating will occur in the range of about 100°C to about 150°C. Examples of solvents that may be utilized include ketones, esters, alcohols, ethers, and other solvents that are stable and dissolve the composition's components. Preferred solvents include γ-butyrolactone and propylene glycol methyl ethyl acetate.
- Suitable fillers for underfill materials are nonconductive and include particles of vermiculite, mica, wollastonite, calcium carbonate, titania, sand, glass, fused silica, fumed silica, barium sulfate, and halogenated ethylene polymers, such as tetrafluoroethylene, trifluoro-ethylene, vinylidene fluoride, vinyl fluoride, vinylidene chloride, and vinyl chloride. If used, fillers generally will be present in amounts up to 98% by weight of the formulation.
- Curing agents such as free radical initiators, thermal initiators, and photoinitiators will be present in an effective amount to cure the composition. In general, those amounts will range from 0.1 % to 30%, preferably 1 % to 20%, by weight of the total organic material (that is, excluding any inorganic fillers) in the composition. Preferred free-radical initiators include peroxides, such as butyl peroctoates and dicumyl peroxide, commercial products, such as USP90MD (a product of Witco), and azo compounds, such as (VAZ052 and VAZ064 (products of Dupont), 2,2'-azobis(2-methyl-propanenitrile) and 2,2'-azobis(2-methyl-butanenitrile). Preferred photoinitiators are those sold by Ciba Specialty Chemicals under the trademark Irgacure.
- For some first compositions, it may be advantageous to include a curing accelerator, such as cobalt neodecanoate, to lower the curing temperature. If added, curing accelerators will be present in an amount from about 0.05% to about 1.0% by weight of the organic components of the first composition, excluding the organic components of the second composition and any fillers. It may in some cases also be advantageous to add a cationic curing agent, such as Rhodorsil 2074.
- Other optional ingredients at the disposal of the formulator are defoaming agents, adhesion promoters, wetting agents, flow additives and rheology modifiers, which if added typically will be present in amounts from 0.01 % to 5% by weight.
- Silicon wafers have an active face, on which the microcircuitry is embedded, and a passive face. The dual cure underfill compositions of this invention are stenciled onto the active face of the silicon wafer. In a further embodiment, this invention is a silicon wafer with an active face containing circuitry on which has been deposited a B-stageable underfill, the B-stageable underfill comprising a first composition with a lower curing temperature as described previously and a second composition with a higher curing temperature as described previously, characterized in that the first composition has been fully cured, and in which the second composition is an epoxy compound and an imidazole/anhydride adduct.
- EXAMPLE 1: Two compositions with dual cure capability were prepared and tested to determine the appropriate parameters for B-staging and to demonstrate proper interconnection formation. The components in parts by weight are recorded in Table 1.
-
TABLE 1 FORMULATION A
(Parts by weight)Epoxy Epon 1001 50 2-Phenoxyethyl acrylate 25.2 Butylphenyl maleimide 25 Cobalt neodecanoate 1 t-Butyl peroctoate 2 Adduct of PMDA and 2P4Mz 2 Dodecanedioic acid 10 FORMULATION B
(Parts by weight)Epoxy Epon 1001 50 2-Phenoxyethyl acrylate 25.2 Cobalt neodecanoate 1 t-Butyl peroctoate 2 Adduct of PMDA and 2P4Mz 2 Dodecanedioic acid 10 - Achieving proper B-staging parameters is important for both the dicing of the wafer and for the eventual attach of the semiconductor chip to its substrate. If the formulation is heated (B-staged) for less than the optimal time, the underfill will be tacky and will affect the dicing process. If the material is heated (B-staged) at too high a temperature or for too long a time period, the second composition will start to cure. If the second composition starts to cure, the over-B-staged coating on the chip will not flow during attachment of the chip to the substrate, which affects the adhesion of the underfill encapsulant and eventually the performance of the semiconductor package.
- The test vehicle used to determine the ability of the compositions to be B-staged and the appropriate parameters for B-staging was a glass slide bumped with eutectic solder balls 20 mil in diameter. Formulations A and B were stenciled independently onto the test vehicles to a height of 20 mil. The test vehicles were heated at 130°C under vacuum in a NAPCO vacuum oven, model 5831, with vacuum reading at 73.66 cm (29 inch) Hg for 30 minutes and at each 10 minute interval up to 100 minutes.
- After each time period of heating, the test vehicles were checked for a non-tacky, uniform, and smooth coating by visual observation and manual touching.
- The test vehicles were also investigated for curing of the second composition. After each time period for heating as described above, the test vehicle was placed underfill side down onto a piece of FR-4 Board with copper finish. This assembly was then passed through a reflow oven with a typical reflow temperature profile with the highest temperature at 240°C. The assembly was visually checked through the glass slide for fluxing of the solder balls and attachment between the glass slide test vehicle and the FR-4 board. Enlarged solder balls are indicative of fluxing. The absence of fluxing is indicative of curing of the second composition, which would constrain the solder and inhibit it from flowing. The absence of fluxing also prevents the attachment of the test vehicle to the FR-4 board.
- The results of the test are reported in Table 2 and show that for these formulations, B-staging can achieve a non-tacky coating and no curing of the second composition.
-
TABLE 2 B-staging Times and Results 130°C for time (min) Tacky Second Composition Cured 30 Yes No 40 Yes No 50 No No 60 No No 70 No Yes 80 No Yes 90 No Yes 100 No Yes - Visual observation and the data show that the optimal B-staging time under is 50-60 minutes at 130°C in the vacuum oven for the compositions with thickness of 20 mils. Under these B-stage conditions, a smooth, non-tacky, and void-free coating formed on the glass slide. If the material was cured less than this time, the underfill was still tacky. If the material was B-staged longer than 60 minutes, after the glass slide was attached on the FR-4 board, the assembly showed either no-flux of the solder balls, or poor attachment between the parts, or both.
- It should be pointed out that the optimal B-stage period depends on the thickness of the underfill encapsulant and the chemical composition of the formulations. In general, the thicker the underfill encapsulant, the longer the required B-stage time period. Determination of the optimal B-stage time is within the expertise of one skilled in the art with the disclosures of this specification.
- EXAMPLE 2. This example demonstrates the ability of the dual curable underfill compositions to flux eutectic Pb/Sn solder and enable the formation of interconnection with the substrate. The same Formulations A and B used in Example 1 were used here. Eutectic solder balls 20 mils in diameter were placed onto a glass slide. The underfill material was coated onto the glass slides to a thickness of around 20 mils by stenciling. The glass slides were then placed on a hot-plate, preheated at 135°C, and held at that temperature for 50 minutes. A smooth, void free, non-tacky coating was obtained.
- The coated glass slide was then placed (coated side down) on a piece of copper finished FR-4 substrate. The FR-4 substrate (with the coated glass slide on its top) was placed on a hot-plate that was pre-heated to 240°C. It was observed that the solder balls increased in area and the slide collapsed onto the substrate, indicating that the solder fluxed and an interconnection between chip and substrate would have been formed. The underfill also wetted the substrate and flowed to form a complete fillet around the glass slide.
- Using exactly the same underfill compositions and processes, similar results were obtained on OSP (Organic Solderable Passivation) coated copper substrate.
Claims (8)
- A silicon wafer having a B-stageable underfill material deposited on one face of the wafer, the B-stageable underfill comprising two chemical compositions, a first composition and a second composition, having curing temperatures or curing temperature ranges sufficiently separated to allow the composition with the lower curing temperature, the first composition, to cure without curing the composition with the higher curing temperature, the second composition,
characterized in that the first composition has been cured and the second composition is uncured,
and in which the second composition is an epoxy compound and an imidazole/anhydride adduct. - The silicon wafer according to claim 1 in which the curing temperatures of the first and second composition are separated by at least 30°C.
- The silicon wafer according to claim 1 in which the first composition is selected from the group consisting of acrylic compounds; cycloaliphatic epoxy compounds, bismaleimide compounds; and bismaleimide compounds in combination with vinyl ether, vinyl silane, styrenic or cinnamyl compounds.
- The silicon wafer according to claim 1 in which the imidazole/anhydride adduct is a complex of 1 part 1,2,4,5-benzenetetracerboxylic anhydride and 4 parts 2-phenyl-4-methylimidazole, or a complex of 1 part 1,2,4,5-benzenetetracarboxylic dianhydride and 2 parts 2-phenyl-4-methylimidazole.
- A B-stageable underfill composition suitable for application to a silicon wafer before singulation characterized in that it comprises two chemical compositions, a first composition and a second composition, having curing temperatures or curing temperature ranges sufficiently separated to allow the composition with the lower curing temperature, the first composition, to cure without curing the composition with the higher curing temperature, the second composition,
and in which the second composition is an epoxy compound with an imidazole/anhydride adduct. - The B-stageable underfill composition according to claim 5 in which the curing temperatures of the first and second compositions are separated by at least 30°C.
- The B-stageable underfill composition according to claim 6 in which the first composition is selected from the group consisting of acrylic compounds: cycloaliphatic epoxy compounds, bismaleimide compounds; and bismaleimide compounds in combination with vinyl ether, vinyl silane, styrenic or cinnamyl compounds.
- The B-stageable underfill composition according to claim 6 in which the imidazole/anhydride adduct is a complex of 1 part 1,2,4,5-benzenetetracarboxylic anhydride and 4 parts 2-phenyl-4-methylimidazole, or a complex of 1 part 1,2,4,5-benzenetetracarboxylic dianhydride and 2 parts 2-phenyl-4-methylimidazole.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US20638 | 2001-12-14 | ||
US10/020,638 US6833629B2 (en) | 2001-12-14 | 2001-12-14 | Dual cure B-stageable underfill for wafer level |
PCT/US2002/037208 WO2003052813A2 (en) | 2001-12-14 | 2002-11-19 | Dual cure b-stageable underfill for wafer level |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1461829A2 EP1461829A2 (en) | 2004-09-29 |
EP1461829B1 EP1461829B1 (en) | 2008-01-09 |
EP1461829B2 true EP1461829B2 (en) | 2014-04-02 |
Family
ID=21799738
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP02805072.2A Expired - Lifetime EP1461829B2 (en) | 2001-12-14 | 2002-11-19 | Dual cure b-stageable underfill for wafer level |
Country Status (11)
Country | Link |
---|---|
US (1) | US6833629B2 (en) |
EP (1) | EP1461829B2 (en) |
JP (1) | JP4299140B2 (en) |
KR (1) | KR100932998B1 (en) |
CN (1) | CN1307701C (en) |
AT (1) | ATE383655T1 (en) |
AU (1) | AU2002366498A1 (en) |
DE (1) | DE60224581T2 (en) |
DK (1) | DK1461829T3 (en) |
TW (1) | TWI238476B (en) |
WO (1) | WO2003052813A2 (en) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030129438A1 (en) * | 2001-12-14 | 2003-07-10 | Becker Kevin Harris | Dual cure B-stageable adhesive for die attach |
US6833629B2 (en) | 2001-12-14 | 2004-12-21 | National Starch And Chemical Investment Holding Corporation | Dual cure B-stageable underfill for wafer level |
US20030162911A1 (en) * | 2002-01-31 | 2003-08-28 | Yue Xiao | No flow underfill composition |
US7473995B2 (en) * | 2002-03-25 | 2009-01-06 | Intel Corporation | Integrated heat spreader, heat sink or heat pipe with pre-attached phase change thermal interface material and method of making an electronic assembly |
US7846778B2 (en) * | 2002-02-08 | 2010-12-07 | Intel Corporation | Integrated heat spreader, heat sink or heat pipe with pre-attached phase change thermal interface material and method of making an electronic assembly |
US20060194064A1 (en) * | 2002-03-01 | 2006-08-31 | Xiao Allison Y | Underfill encapsulant for wafer packaging and method for its application |
US7037399B2 (en) * | 2002-03-01 | 2006-05-02 | National Starch And Chemical Investment Holding Corporation | Underfill encapsulant for wafer packaging and method for its application |
US20060147719A1 (en) * | 2002-11-22 | 2006-07-06 | Slawomir Rubinsztajn | Curable composition, underfill, and method |
US20050049334A1 (en) * | 2003-09-03 | 2005-03-03 | Slawomir Rubinsztain | Solvent-modified resin system containing filler that has high Tg, transparency and good reliability in wafer level underfill applications |
US7022410B2 (en) * | 2003-12-16 | 2006-04-04 | General Electric Company | Combinations of resin compositions and methods of use thereof |
US7176044B2 (en) | 2002-11-25 | 2007-02-13 | Henkel Corporation | B-stageable die attach adhesives |
US20040158008A1 (en) * | 2003-02-06 | 2004-08-12 | Xiping He | Room temperature printable adhesive paste |
US6885108B2 (en) * | 2003-03-18 | 2005-04-26 | Micron Technology, Inc. | Protective layers formed on semiconductor device components so as to reduce or eliminate the occurrence of delamination thereof and cracking therein |
JP4799177B2 (en) | 2003-09-30 | 2011-10-26 | 関西ペイント株式会社 | Coating composition and coating film forming method |
WO2005056675A1 (en) * | 2003-11-21 | 2005-06-23 | Lord Corporation | Dual-stage wafer applied underfills |
US6908789B1 (en) * | 2003-12-15 | 2005-06-21 | Intel Corporation | Method of making a microelectronic assembly |
US7560519B2 (en) * | 2004-06-02 | 2009-07-14 | Lord Corporation | Dual-stage wafer applied underfills |
DE102005046280B4 (en) | 2005-09-27 | 2007-11-08 | Infineon Technologies Ag | Semiconductor device with a semiconductor chip and method for producing the same |
US20080039542A1 (en) * | 2006-08-11 | 2008-02-14 | General Electric Company | Composition and associated method |
US20080039608A1 (en) * | 2006-08-11 | 2008-02-14 | General Electric Company | Oxetane composition, associated method and article |
US20080121845A1 (en) * | 2006-08-11 | 2008-05-29 | General Electric Company | Oxetane composition, associated method and article |
US20080039560A1 (en) * | 2006-08-11 | 2008-02-14 | General Electric Company | Syneretic composition, associated method and article |
KR100792950B1 (en) * | 2007-01-19 | 2008-01-08 | 엘에스전선 주식회사 | Method of packaging semi-conductor |
TW200948888A (en) * | 2008-04-16 | 2009-12-01 | Henkel Corp | Flow controllable B-stageable composition |
US8436253B2 (en) * | 2008-05-23 | 2013-05-07 | Panasonic Corporation | Method of manufacturing mounting structure and mounting structure |
EP2359395B1 (en) * | 2008-11-25 | 2013-08-14 | Lord Corporation | Methods for protecting a die surface with photocurable materials |
US9093448B2 (en) | 2008-11-25 | 2015-07-28 | Lord Corporation | Methods for protecting a die surface with photocurable materials |
TWI456012B (en) * | 2010-06-08 | 2014-10-11 | Henkel IP & Holding GmbH | Wafer backside coating process with pulsed uv light source |
CN104937027B (en) * | 2013-01-23 | 2018-10-12 | 汉高知识产权控股有限责任公司 | Underfill composition and the packaging technology for using the composition |
CN105453240B (en) * | 2013-08-02 | 2018-05-01 | 阿尔发装配解决方案有限公司 | Two-sided reinforcement solder flux for encapsulation |
WO2017062586A1 (en) * | 2015-10-07 | 2017-04-13 | Henkel IP & Holding GmbH | Formulations and the use for 3d tsv packages |
JP6224188B1 (en) * | 2016-08-08 | 2017-11-01 | 太陽インキ製造株式会社 | Semiconductor encapsulant |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3244051A1 (en) † | 1981-12-01 | 1983-07-14 | Illinois Tool Works Inc., 60631 Chicago, Ill. | POLYMERIZABLE ADHESIVE MIXTURE AND METHOD FOR PRODUCING A QUICKLY SETTING, STRONG, PERMANENT, HEAT AND SOLVENT RESISTANT ADHESIVE BONDING WITH THE ADHESIVE MIXTURE |
EP0160621A2 (en) † | 1984-04-28 | 1985-11-06 | Ciba-Geigy Ag | Curable compositions |
JPS6381187A (en) † | 1986-09-25 | 1988-04-12 | Ibiden Co Ltd | Thermosetting adhesive sheet |
JPS63154780A (en) † | 1986-12-18 | 1988-06-28 | Ibiden Co Ltd | Adhesive composition and method of using the same as adhesive |
US5261156A (en) † | 1991-02-28 | 1993-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of electrically connecting an integrated circuit to an electric device |
US5579573A (en) † | 1994-10-11 | 1996-12-03 | Ford Motor Company | Method for fabricating an undercoated chip electrically interconnected to a substrate |
WO1999067324A1 (en) † | 1998-06-22 | 1999-12-29 | Loctite Corporation | Thermosetting resin compositions useful as underfill sealants |
EP0982385A1 (en) † | 1997-05-12 | 2000-03-01 | Fujitsu Limited | Adhesive, method for bonding, and assemblies of mounted boards |
JP2001015551A (en) † | 1999-06-29 | 2001-01-19 | Toshiba Corp | Semiconductor device and its manufacture |
JP2001323246A (en) † | 2000-03-07 | 2001-11-22 | Sony Chem Corp | Adhesive for connecting electrode and bonding method using the adhesive |
Family Cites Families (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3746686A (en) | 1971-07-12 | 1973-07-17 | Shell Oil Co | Process for curing polyepoxides with polycarboxylic acid salts of an imidazole compound and compositions thereof |
JPS535920B2 (en) | 1974-06-03 | 1978-03-02 | ||
JPS592445B2 (en) | 1978-11-10 | 1984-01-18 | 三菱電機株式会社 | Manufacturing method of heat-resistant resin |
US4401499A (en) * | 1980-06-09 | 1983-08-30 | Sumitomo Bakelite Company Limited | Crosslinked resin of epoxy compound and isocyanate and process for producing same |
JPS5718815A (en) | 1980-07-04 | 1982-01-30 | Mitsubishi Heavy Ind Ltd | Bearing device |
JPS59197154A (en) | 1983-04-22 | 1984-11-08 | Hitachi Ltd | Semiconductor device and manufacture thereof |
JPS61237436A (en) | 1985-04-15 | 1986-10-22 | Toshiba Chem Corp | Manufacture of semiconductor element |
JPS62275123A (en) | 1986-05-23 | 1987-11-30 | Toray Ind Inc | Resin composition for prepreg |
US4816531A (en) | 1987-02-05 | 1989-03-28 | Shell Oil Company | Bismaleimide resin composition containing epoxy resin and a phenolic curing agent therefor |
US5082880A (en) * | 1988-09-12 | 1992-01-21 | Mitsui Toatsu Chemicals, Inc. | Semiconductor sealing composition containing epoxy resin and polymaleimide |
US5208188A (en) | 1989-10-02 | 1993-05-04 | Advanced Micro Devices, Inc. | Process for making a multilayer lead frame assembly for an integrated circuit structure and multilayer integrated circuit die package formed by such process |
US5081167A (en) | 1990-07-16 | 1992-01-14 | Shell Oil Company | Cyanamide-cured maleimide/epoxy resin blend |
US5128746A (en) * | 1990-09-27 | 1992-07-07 | Motorola, Inc. | Adhesive and encapsulant material with fluxing properties |
DE4130329A1 (en) | 1991-09-12 | 1993-03-18 | Bayer Ag | HEAT-CURABLE REACTION RESIN MIXTURES, A METHOD FOR THE PRODUCTION THEREOF AND THE USE FOR THE PRODUCTION OF PRESSING MATERIALS AND MOLDED BODIES |
US5728633A (en) * | 1992-01-23 | 1998-03-17 | Jacobs; Richard L. | Interpenetrating network compositions and structures |
US5510633A (en) | 1994-06-08 | 1996-04-23 | Xerox Corporation | Porous silicon light emitting diode arrays and method of fabrication |
US5494981A (en) * | 1995-03-03 | 1996-02-27 | Minnesota Mining And Manufacturing Company | Epoxy-cyanate ester compositions that form interpenetrating networks via a Bronsted acid |
US5654081A (en) * | 1995-07-05 | 1997-08-05 | Ford Motor Company | Integrated circuit assembly with polymeric underfill body |
CN1057402C (en) * | 1996-03-01 | 2000-10-11 | 台湾通用器材股份有限公司 | Method for packing semiconductor |
JP2891184B2 (en) | 1996-06-13 | 1999-05-17 | 日本電気株式会社 | Semiconductor device and manufacturing method thereof |
US5756405A (en) * | 1996-09-10 | 1998-05-26 | International Business Machines Corporation | Technique for forming resin-impregnated fiberglass sheets |
KR100467897B1 (en) * | 1996-12-24 | 2005-01-24 | 닛토덴코 가부시키가이샤 | A semiconductor device and a process for the production thereof |
JP2001510944A (en) * | 1997-07-21 | 2001-08-07 | アギラ テクノロジーズ インコーポレイテッド | Semiconductor flip chip package and method of manufacturing the same |
KR100571334B1 (en) | 1997-07-24 | 2006-04-14 | 헨켈 록타이트 코오포레이션 | Thermosetting resin composition useful as an underfill sealant |
US6300686B1 (en) * | 1997-10-02 | 2001-10-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor chip bonded to a thermal conductive sheet having a filled through hole for electrical connection |
US20010020071A1 (en) | 1997-10-10 | 2001-09-06 | Capote Miguel Albert | High performance cyanate-bismaleimide-epoxy resin compositions for printed circuits and encapsulants |
WO1999021917A1 (en) * | 1997-10-23 | 1999-05-06 | Ciba Specialty Chemicals Holding Inc. | Hardener for anhydride group-containing polymers |
JP3184485B2 (en) | 1997-11-06 | 2001-07-09 | 三井金属鉱業株式会社 | Resin composition for copper clad laminate, copper foil with resin, multilayer copper clad laminate and multilayer printed wiring board |
US6194490B1 (en) | 1998-02-27 | 2001-02-27 | Vantico, Inc. | Curable composition comprising epoxidized natural oils |
US6228678B1 (en) | 1998-04-27 | 2001-05-08 | Fry's Metals, Inc. | Flip chip with integrated mask and underfill |
US6265776B1 (en) | 1998-04-27 | 2001-07-24 | Fry's Metals, Inc. | Flip chip with integrated flux and underfill |
JP4098403B2 (en) | 1998-06-01 | 2008-06-11 | 富士通株式会社 | Adhesive, bonding method, and assembly of mounting substrate |
US6350840B1 (en) | 1998-07-02 | 2002-02-26 | National Starch And Chemical Investment Holding Corporation | Underfill encapsulants prepared from allylated amide compounds |
US6057381A (en) | 1998-07-02 | 2000-05-02 | National Starch And Chemical Investment Holding Corporation | Method of making an electronic component using reworkable underfill encapsulants |
US6063828A (en) | 1998-07-02 | 2000-05-16 | National Starch And Chemical Investment Holding Corporation | Underfill encapsulant compositions for use in electronic devices |
AU2165100A (en) | 1998-12-07 | 2000-06-26 | Dexter Corporation, The | Underfill film compositions |
US6528345B1 (en) * | 1999-03-03 | 2003-03-04 | Intel Corporation | Process line for underfilling a controlled collapse |
US6331446B1 (en) * | 1999-03-03 | 2001-12-18 | Intel Corporation | Process for underfilling a controlled collapse chip connection (C4) integrated circuit package with an underfill material that is heated to a partial gel state |
JP3601443B2 (en) | 1999-11-30 | 2004-12-15 | 日立化成工業株式会社 | Adhesive film, method of manufacturing the same, wiring board for mounting semiconductor, and semiconductor device |
JP3562465B2 (en) | 1999-11-30 | 2004-09-08 | 日立化成工業株式会社 | Adhesive composition, adhesive film and wiring board for mounting semiconductor |
KR20010054743A (en) | 1999-12-08 | 2001-07-02 | 윤종용 | Semiconductor package comprising double underfill area |
JP2001205211A (en) * | 2000-01-28 | 2001-07-31 | Sanyo Electric Co Ltd | Plasma cleaning apparatus |
US6498260B2 (en) * | 2000-03-29 | 2002-12-24 | Georgia Tech Research Corp. | Thermally degradable epoxy underfills for flip-chip applications |
US6307001B1 (en) | 2000-05-18 | 2001-10-23 | National Starch And Chemical Investment Holding Corporation | Curable hybrid electron donor compounds containing vinyl ether |
US6441213B1 (en) | 2000-05-18 | 2002-08-27 | National Starch And Chemical Investment Holding Corporation | Adhesion promoters containing silane, carbamate or urea, and donor or acceptor functionality |
WO2002048234A2 (en) * | 2000-12-14 | 2002-06-20 | Dow Global Technologies Inc. | Epoxy resins and process for making the same |
US6686425B2 (en) * | 2001-06-08 | 2004-02-03 | Adhesives Research, Inc. | High Tg acrylic polymer and epoxy-containing blend therefor as pressure sensitive adhesive |
US6833629B2 (en) | 2001-12-14 | 2004-12-21 | National Starch And Chemical Investment Holding Corporation | Dual cure B-stageable underfill for wafer level |
-
2001
- 2001-12-14 US US10/020,638 patent/US6833629B2/en not_active Expired - Lifetime
-
2002
- 2002-11-19 AT AT02805072T patent/ATE383655T1/en not_active IP Right Cessation
- 2002-11-19 WO PCT/US2002/037208 patent/WO2003052813A2/en active IP Right Grant
- 2002-11-19 DE DE60224581T patent/DE60224581T2/en not_active Expired - Lifetime
- 2002-11-19 CN CNB028249372A patent/CN1307701C/en not_active Expired - Fee Related
- 2002-11-19 AU AU2002366498A patent/AU2002366498A1/en not_active Abandoned
- 2002-11-19 KR KR1020047007746A patent/KR100932998B1/en active IP Right Grant
- 2002-11-19 JP JP2003553611A patent/JP4299140B2/en not_active Expired - Fee Related
- 2002-11-19 DK DK02805072T patent/DK1461829T3/en active
- 2002-11-19 EP EP02805072.2A patent/EP1461829B2/en not_active Expired - Lifetime
- 2002-12-13 TW TW091136234A patent/TWI238476B/en active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3244051A1 (en) † | 1981-12-01 | 1983-07-14 | Illinois Tool Works Inc., 60631 Chicago, Ill. | POLYMERIZABLE ADHESIVE MIXTURE AND METHOD FOR PRODUCING A QUICKLY SETTING, STRONG, PERMANENT, HEAT AND SOLVENT RESISTANT ADHESIVE BONDING WITH THE ADHESIVE MIXTURE |
EP0160621A2 (en) † | 1984-04-28 | 1985-11-06 | Ciba-Geigy Ag | Curable compositions |
JPS6381187A (en) † | 1986-09-25 | 1988-04-12 | Ibiden Co Ltd | Thermosetting adhesive sheet |
JPS63154780A (en) † | 1986-12-18 | 1988-06-28 | Ibiden Co Ltd | Adhesive composition and method of using the same as adhesive |
US5261156A (en) † | 1991-02-28 | 1993-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of electrically connecting an integrated circuit to an electric device |
US5579573A (en) † | 1994-10-11 | 1996-12-03 | Ford Motor Company | Method for fabricating an undercoated chip electrically interconnected to a substrate |
EP0982385A1 (en) † | 1997-05-12 | 2000-03-01 | Fujitsu Limited | Adhesive, method for bonding, and assemblies of mounted boards |
WO1999067324A1 (en) † | 1998-06-22 | 1999-12-29 | Loctite Corporation | Thermosetting resin compositions useful as underfill sealants |
JP2001015551A (en) † | 1999-06-29 | 2001-01-19 | Toshiba Corp | Semiconductor device and its manufacture |
US6388321B1 (en) † | 1999-06-29 | 2002-05-14 | Kabushiki Kaisha Toshiba | Anisotropic conductive film and resin filling gap between a flip-chip and circuit board |
JP2001323246A (en) † | 2000-03-07 | 2001-11-22 | Sony Chem Corp | Adhesive for connecting electrode and bonding method using the adhesive |
US20030029559A1 (en) † | 2000-03-07 | 2003-02-13 | Sony Chemical Corp. | Adhesive for connecting electrodes and adhesion methods with the use of the same |
Non-Patent Citations (1)
Title |
---|
G. CARSON ET AL.: "Underfill-Technologie", MATERIALIEN DER NÄCHSTEN GENERATION, vol. 12, 2006, pages 64 † |
Also Published As
Publication number | Publication date |
---|---|
CN1307701C (en) | 2007-03-28 |
EP1461829A2 (en) | 2004-09-29 |
JP4299140B2 (en) | 2009-07-22 |
CN1605122A (en) | 2005-04-06 |
JP2005513779A (en) | 2005-05-12 |
KR100932998B1 (en) | 2009-12-21 |
WO2003052813A2 (en) | 2003-06-26 |
US6833629B2 (en) | 2004-12-21 |
US20030141592A1 (en) | 2003-07-31 |
ATE383655T1 (en) | 2008-01-15 |
KR20040068145A (en) | 2004-07-30 |
WO2003052813A3 (en) | 2004-02-19 |
TW200305608A (en) | 2003-11-01 |
EP1461829B1 (en) | 2008-01-09 |
AU2002366498A1 (en) | 2003-06-30 |
TWI238476B (en) | 2005-08-21 |
DE60224581T2 (en) | 2009-01-22 |
DK1461829T3 (en) | 2008-05-19 |
DE60224581D1 (en) | 2008-02-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1461829B2 (en) | Dual cure b-stageable underfill for wafer level | |
US7037399B2 (en) | Underfill encapsulant for wafer packaging and method for its application | |
US7608487B2 (en) | B-stageable underfill encapsulant and method for its application | |
EP1818351B1 (en) | Underfill encapsulant for wafer packaging and method for its application | |
US7047633B2 (en) | Method of using pre-applied underfill encapsulant | |
EP1470176B1 (en) | No flow underfill composition | |
US20050238881A1 (en) | Semiconductor assembly using dual-cure die attach adhesive | |
JP2005516090A5 (en) | ||
EP1470584A2 (en) | No-flow underfill encapsulant | |
US7004375B2 (en) | Pre-applied fluxing underfill composition having pressure sensitive adhesive properties |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20040325 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR |
|
AX | Request for extension of the european patent |
Extension state: AL LT LV MK RO SI |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 23/29 20060101ALI20070619BHEP Ipc: C08G 59/18 20060101ALI20070619BHEP Ipc: H01L 21/56 20060101AFI20070619BHEP |
|
GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: EP |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: FG4D |
|
REF | Corresponds to: |
Ref document number: 60224581 Country of ref document: DE Date of ref document: 20080221 Kind code of ref document: P |
|
REG | Reference to a national code |
Ref country code: DK Ref legal event code: T3 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: CH Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20080109 Ref country code: LI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20080109 Ref country code: ES Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20080420 Ref country code: FI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20080109 |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: PL |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BG Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20080409 Ref country code: AT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20080109 |
|
ET | Fr: translation filed | ||
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: PT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20080609 |
|
PLBI | Opposition filed |
Free format text: ORIGINAL CODE: 0009260 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: CZ Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20080109 Ref country code: SE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20080409 Ref country code: SK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20080109 |
|
PLAX | Notice of opposition and request to file observation + time limit sent |
Free format text: ORIGINAL CODE: EPIDOSNOBS2 |
|
26 | Opposition filed |
Opponent name: SIKA TECHNOLOGY AG Effective date: 20081009 |
|
NLR1 | Nl: opposition has been filed with the epo |
Opponent name: SIKA TECHNOLOGY AG |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DK Payment date: 20081126 Year of fee payment: 7 |
|
PLAF | Information modified related to communication of a notice of opposition and request to file observations + time limit |
Free format text: ORIGINAL CODE: EPIDOSCOBS2 |
|
PLAB | Opposition data, opponent's data or that of the opponent's representative modified |
Free format text: ORIGINAL CODE: 0009299OPPO |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: BE Payment date: 20081128 Year of fee payment: 7 |
|
RAP2 | Party data changed (patent owner data changed or rights of a patent transferred) |
Owner name: HENKEL AG & CO. KGAA |
|
R26 | Opposition filed (corrected) |
Opponent name: SIKA TECHNOLOGY AG Effective date: 20081009 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: EE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20080109 |
|
PLBB | Reply of patent proprietor to notice(s) of opposition received |
Free format text: ORIGINAL CODE: EPIDOSNOBS3 |
|
NLT2 | Nl: modifications (of names), taken from the european patent patent bulletin |
Owner name: HENKEL AG & CO. KGAA Effective date: 20090408 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: MC Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20081130 |
|
NLR1 | Nl: opposition has been filed with the epo |
Opponent name: SIKA TECHNOLOGY AG |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: CY Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20080109 |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: 732E Free format text: REGISTERED BETWEEN 20090827 AND 20090902 |
|
NLS | Nl: assignments of ep-patents |
Owner name: HENKEL AG & CO. KGAA Effective date: 20090724 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20081119 |
|
PLAB | Opposition data, opponent's data or that of the opponent's representative modified |
Free format text: ORIGINAL CODE: 0009299OPPO |
|
R26 | Opposition filed (corrected) |
Opponent name: SIKA TECHNOLOGY AG Effective date: 20081009 |
|
NLR1 | Nl: opposition has been filed with the epo |
Opponent name: SIKA TECHNOLOGY AG |
|
BERE | Be: lapsed |
Owner name: NATIONAL STARCH AND CHEMICAL INVESTMENT HOLDING C Effective date: 20091130 |
|
REG | Reference to a national code |
Ref country code: DK Ref legal event code: EBP |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LU Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20081119 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: TR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20080109 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20080410 Ref country code: BE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20091130 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DK Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20091130 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: IT Payment date: 20101113 Year of fee payment: 9 Ref country code: GB Payment date: 20101117 Year of fee payment: 9 |
|
RIC2 | Information provided on ipc code assigned after grant |
Ipc: H01L 21/56 20060101AFI20111121BHEP Ipc: C08G 59/18 20060101ALI20111121BHEP Ipc: H01L 23/29 20060101ALI20111121BHEP |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: NL Payment date: 20111117 Year of fee payment: 10 Ref country code: FR Payment date: 20111118 Year of fee payment: 10 |
|
APBM | Appeal reference recorded |
Free format text: ORIGINAL CODE: EPIDOSNREFNO |
|
APBP | Date of receipt of notice of appeal recorded |
Free format text: ORIGINAL CODE: EPIDOSNNOA2O |
|
APAH | Appeal reference modified |
Free format text: ORIGINAL CODE: EPIDOSCREFNO |
|
APBU | Appeal procedure closed |
Free format text: ORIGINAL CODE: EPIDOSNNOA9O |
|
REG | Reference to a national code |
Ref country code: NL Ref legal event code: V1 Effective date: 20130601 |
|
GBPC | Gb: european patent ceased through non-payment of renewal fee |
Effective date: 20121119 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: ST Effective date: 20130731 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20121119 Ref country code: NL Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20130601 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FR Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20121130 Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20121119 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 20131113 Year of fee payment: 12 |
|
PUAH | Patent maintained in amended form |
Free format text: ORIGINAL CODE: 0009272 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: PATENT MAINTAINED AS AMENDED |
|
27A | Patent maintained in amended form |
Effective date: 20140402 |
|
AK | Designated contracting states |
Kind code of ref document: B2 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R102 Ref document number: 60224581 Country of ref document: DE |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R102 Ref document number: 60224581 Country of ref document: DE Effective date: 20140402 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R135 Ref document number: 60224581 Country of ref document: DE |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R135 Ref document number: 60224581 Country of ref document: DE Effective date: 20140703 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20140703 |