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EP1226395A4 - Hot wall rapid thermal processor - Google Patents

Hot wall rapid thermal processor

Info

Publication number
EP1226395A4
EP1226395A4 EP00957426A EP00957426A EP1226395A4 EP 1226395 A4 EP1226395 A4 EP 1226395A4 EP 00957426 A EP00957426 A EP 00957426A EP 00957426 A EP00957426 A EP 00957426A EP 1226395 A4 EP1226395 A4 EP 1226395A4
Authority
EP
European Patent Office
Prior art keywords
rapid thermal
hot wall
thermal processor
wall rapid
processor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00957426A
Other languages
German (de)
French (fr)
Other versions
EP1226395A1 (en
Inventor
Christopher T Ratliff
Jeffrey M Kowalski
Taiqing Qiu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML US Inc
Original Assignee
ASML US Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/373,894 external-priority patent/US6300600B1/en
Application filed by ASML US Inc filed Critical ASML US Inc
Publication of EP1226395A1 publication Critical patent/EP1226395A1/en
Publication of EP1226395A4 publication Critical patent/EP1226395A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/06—Details, accessories or equipment specially adapted for furnaces of these types
    • F27B5/16—Arrangements of air or gas supply devices
    • F27B2005/161—Gas inflow or outflow
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/06—Details, accessories or equipment specially adapted for furnaces of these types
    • F27B5/14—Arrangements of heating devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D1/00—Casings; Linings; Walls; Roofs
    • F27D1/18—Door frames; Doors, lids or removable covers
    • F27D1/1858—Doors
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D3/00—Charging; Discharging; Manipulation of charge
    • F27D2003/0034—Means for moving, conveying, transporting the charge in the furnace or in the charging facilities
    • F27D2003/0075—Charging or discharging vertically, e.g. through a bottom opening

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Muffle Furnaces And Rotary Kilns (AREA)
  • Furnace Details (AREA)
  • Furnace Charging Or Discharging (AREA)
EP00957426A 1999-08-12 2000-08-11 Hot wall rapid thermal processor Withdrawn EP1226395A4 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US373894 1999-08-12
US09/373,894 US6300600B1 (en) 1998-08-12 1999-08-12 Hot wall rapid thermal processor
US21732100P 2000-07-07 2000-07-07
US217321P 2000-07-07
PCT/US2000/022202 WO2001013054A1 (en) 1999-08-12 2000-08-11 Hot wall rapid thermal processor

Publications (2)

Publication Number Publication Date
EP1226395A1 EP1226395A1 (en) 2002-07-31
EP1226395A4 true EP1226395A4 (en) 2008-02-20

Family

ID=26911831

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00957426A Withdrawn EP1226395A4 (en) 1999-08-12 2000-08-11 Hot wall rapid thermal processor

Country Status (7)

Country Link
EP (1) EP1226395A4 (en)
JP (1) JP2003507881A (en)
KR (1) KR20020030093A (en)
CN (1) CN1420978A (en)
AU (1) AU6904700A (en)
TW (1) TW473785B (en)
WO (1) WO2001013054A1 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7045746B2 (en) 2003-11-12 2006-05-16 Mattson Technology, Inc. Shadow-free shutter arrangement and method
JPWO2005122231A1 (en) * 2004-06-09 2008-04-10 株式会社エフティーエル Heating furnace for manufacturing semiconductor device and method for manufacturing semiconductor device
DE102005024118B4 (en) * 2005-05-25 2009-05-07 Mattson Thermal Products Gmbh Apparatus and method for reducing particles in the thermal treatment of rotating substrates
CN100378912C (en) * 2005-09-28 2008-04-02 联华电子股份有限公司 Rapid thermal processing machine platform
JP4849316B2 (en) * 2006-02-21 2012-01-11 株式会社Ｉｈｉ Vacuum deposition system
KR100840015B1 (en) * 2007-01-31 2008-06-20 주식회사 테라세미콘 Heat Treatment System for Amorphous Silicon Crystallization
US9097463B2 (en) 2010-02-23 2015-08-04 Ngk Insulators, Ltd. Housing for heating and use method of the same, heating jig and use method of the same, and operation method of heating device
CN102477546A (en) * 2010-11-25 2012-05-30 绿种子能源科技股份有限公司 Film deposition device with cooling module
CN102569145B (en) * 2010-12-23 2014-03-19 中芯国际集成电路制造(上海)有限公司 Method for correcting wafer position during quick annealing treatment
CN102732853B (en) * 2011-04-08 2014-12-17 北京北方微电子基地设备工艺研究中心有限责任公司 Chamber device and substrate-processing device therewith
KR101376741B1 (en) * 2012-06-22 2014-03-26 (주) 예스티 Heating and pressurization apparatus
KR101396555B1 (en) * 2012-06-22 2014-05-21 (주) 예스티 Heating and pressurization apparatus of improved insulation performance
CN105789084B (en) * 2014-12-17 2019-04-23 北京北方华创微电子装备有限公司 Heating chamber and semiconductor processing equipment
CN106298585B (en) * 2015-06-03 2020-10-16 北京北方华创微电子装备有限公司 Cavity and semiconductor processing equipment
WO2018152808A1 (en) * 2017-02-25 2018-08-30 深圳市玖创科技有限公司 Cooling and sintering integrated lithium ion battery material production apparatus
US10818839B2 (en) 2018-03-15 2020-10-27 Samsung Electronics Co., Ltd. Apparatus for and method of fabricating semiconductor devices
KR102495317B1 (en) * 2018-03-15 2023-02-07 삼성전자주식회사 apparatus for manufacturing semiconductor device and manufacturing method of same
CN110400763B (en) * 2018-04-25 2022-04-22 北京北方华创微电子装备有限公司 Reaction chamber and semiconductor processing equipment
JP7073016B2 (en) * 2020-01-10 2022-05-23 中外炉工業株式会社 Clean heat treatment equipment

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5520742A (en) * 1993-03-03 1996-05-28 Tokyo Electron Kabushiki Kaisha Thermal processing apparatus with heat shielding member
US5651670A (en) * 1991-12-13 1997-07-29 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment method and apparatus thereof
US5908292A (en) * 1997-03-07 1999-06-01 Semitool, Inc. Semiconductor processing furnace outflow cooling system
US6056544A (en) * 1998-05-02 2000-05-02 Samsung Electronics Co., Ltd. Apparatus for baking resists on semiconductor wafers

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
US5252807A (en) * 1990-07-02 1993-10-12 George Chizinsky Heated plate rapid thermal processor
KR100297282B1 (en) * 1993-08-11 2001-10-24 마쓰바 구니유키 Heat treatment apparatus and heat treatment method
JPH1074818A (en) * 1996-09-02 1998-03-17 Tokyo Electron Ltd Treating device
US6086677A (en) * 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5651670A (en) * 1991-12-13 1997-07-29 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment method and apparatus thereof
US5520742A (en) * 1993-03-03 1996-05-28 Tokyo Electron Kabushiki Kaisha Thermal processing apparatus with heat shielding member
US5908292A (en) * 1997-03-07 1999-06-01 Semitool, Inc. Semiconductor processing furnace outflow cooling system
US6056544A (en) * 1998-05-02 2000-05-02 Samsung Electronics Co., Ltd. Apparatus for baking resists on semiconductor wafers

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO0113054A1 *

Also Published As

Publication number Publication date
CN1420978A (en) 2003-05-28
JP2003507881A (en) 2003-02-25
KR20020030093A (en) 2002-04-22
TW473785B (en) 2002-01-21
AU6904700A (en) 2001-03-13
WO2001013054A1 (en) 2001-02-22
EP1226395A1 (en) 2002-07-31

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